TWI463589B - 毫秒退火（ｄｓａ）之邊緣保護 - Google Patents
毫秒退火（ｄｓａ）之邊緣保護 Download PDFInfo
- Publication number
- TWI463589B TWI463589B TW098104686A TW98104686A TWI463589B TW I463589 B TWI463589 B TW I463589B TW 098104686 A TW098104686 A TW 098104686A TW 98104686 A TW98104686 A TW 98104686A TW I463589 B TWI463589 B TW I463589B
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- Prior art keywords
- substrate
- energy
- substrate support
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- electromagnetic energy
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- 238000000137 annealing Methods 0.000 title description 14
- 239000000758 substrate Substances 0.000 claims description 202
- 238000012545 processing Methods 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 23
- 230000000903 blocking effect Effects 0.000 claims description 4
- 230000013011 mating Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- ZKEYULQFFYBZBG-UHFFFAOYSA-N lanthanum carbide Chemical compound [La].[C-]#[C] ZKEYULQFFYBZBG-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/032,475 US7754518B2 (en) | 2008-02-15 | 2008-02-15 | Millisecond annealing (DSA) edge protection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201001588A TW201001588A (en) | 2010-01-01 |
| TWI463589B true TWI463589B (zh) | 2014-12-01 |
Family
ID=40955524
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103137232A TWI545676B (zh) | 2008-02-15 | 2009-02-13 | 毫秒退火（ｄｓａ）之邊緣保護 |
| TW098104686A TWI463589B (zh) | 2008-02-15 | 2009-02-13 | 毫秒退火（ｄｓａ）之邊緣保護 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103137232A TWI545676B (zh) | 2008-02-15 | 2009-02-13 | 毫秒退火（ｄｓａ）之邊緣保護 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7754518B2 (enExample) |
| EP (1) | EP2248150A4 (enExample) |
| JP (1) | JP5451643B2 (enExample) |
| KR (3) | KR101608865B1 (enExample) |
| CN (2) | CN101946302B (enExample) |
| TW (2) | TWI545676B (enExample) |
| WO (1) | WO2009102600A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104736011A (zh) * | 2013-12-27 | 2015-06-24 | Ykk株式会社 | 增强膜粘着装置及具有可分离式嵌插件的拉链 |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5992334B2 (ja) * | 2009-12-31 | 2016-09-14 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | ウエハのエッジおよび斜面の堆積を修正するためのシャドウリング |
| NL2009689A (en) * | 2011-12-01 | 2013-06-05 | Asml Netherlands Bv | Support, lithographic apparatus and device manufacturing method. |
| US9005877B2 (en) | 2012-05-15 | 2015-04-14 | Tokyo Electron Limited | Method of forming patterns using block copolymers and articles thereof |
| KR102003334B1 (ko) | 2012-09-04 | 2019-07-24 | 삼성전자주식회사 | 패턴 형성 방법 |
| US9147574B2 (en) | 2013-03-14 | 2015-09-29 | Tokyo Electron Limited | Topography minimization of neutral layer overcoats in directed self-assembly applications |
| US20140273534A1 (en) | 2013-03-14 | 2014-09-18 | Tokyo Electron Limited | Integration of absorption based heating bake methods into a photolithography track system |
| US8980538B2 (en) | 2013-03-14 | 2015-03-17 | Tokyo Electron Limited | Chemi-epitaxy in directed self-assembly applications using photo-decomposable agents |
| US8975009B2 (en) | 2013-03-14 | 2015-03-10 | Tokyo Electron Limited | Track processing to remove organic films in directed self-assembly chemo-epitaxy applications |
| US9209014B2 (en) | 2013-03-15 | 2015-12-08 | Tokyo Electron Limited | Multi-step bake apparatus and method for directed self-assembly lithography control |
| KR102394994B1 (ko) | 2013-09-04 | 2022-05-04 | 도쿄엘렉트론가부시키가이샤 | 유도 자기 조립용 화학 템플릿을 생성하기 위한 경화 포토레지스트의 자외선을 이용한 박리 |
| US9349604B2 (en) | 2013-10-20 | 2016-05-24 | Tokyo Electron Limited | Use of topography to direct assembly of block copolymers in grapho-epitaxial applications |
| US9793137B2 (en) | 2013-10-20 | 2017-10-17 | Tokyo Electron Limited | Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines |
| CN104733344A (zh) * | 2013-12-18 | 2015-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种边沿保护装置及等离子体加工设备 |
| US20150187616A1 (en) * | 2013-12-31 | 2015-07-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms of adjustable laser beam for laser spike annealing |
| US9410249B2 (en) * | 2014-05-15 | 2016-08-09 | Infineon Technologies Ag | Wafer releasing |
| US10892180B2 (en) * | 2014-06-02 | 2021-01-12 | Applied Materials, Inc. | Lift pin assembly |
| US10658222B2 (en) * | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| CN105988298B (zh) * | 2015-02-02 | 2018-06-01 | 上海微电子装备（集团）股份有限公司 | 硅片边缘保护装置及保护方法 |
| CN108292617B (zh) * | 2015-12-30 | 2022-01-04 | 玛特森技术公司 | 用于毫秒退火系统的室壁加热 |
| US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
| US9947597B2 (en) | 2016-03-31 | 2018-04-17 | Tokyo Electron Limited | Defectivity metrology during DSA patterning |
| JP6618876B2 (ja) * | 2016-09-26 | 2019-12-11 | 株式会社ニューフレアテクノロジー | 基板処理装置、搬送方法およびサセプタ |
| CN106571321B (zh) * | 2016-11-18 | 2019-12-06 | 中国电子科技集团公司第四十八研究所 | 一种用于快速热处理设备的载片台 |
| US10704147B2 (en) * | 2016-12-03 | 2020-07-07 | Applied Materials, Inc. | Process kit design for in-chamber heater and wafer rotating mechanism |
| US10535538B2 (en) * | 2017-01-26 | 2020-01-14 | Gary Hillman | System and method for heat treatment of substrates |
| KR102617972B1 (ko) | 2017-11-21 | 2023-12-22 | 램 리써치 코포레이션 | 하단 링 및 중간 에지 링 |
| CN110376847B (zh) * | 2018-04-12 | 2021-01-01 | 上海微电子装备（集团）股份有限公司 | 一种基底边缘保护环单元、光刻设备及保护方法 |
| US11798789B2 (en) | 2018-08-13 | 2023-10-24 | Lam Research Corporation | Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features |
| CN114743854B (zh) | 2019-05-14 | 2025-02-25 | 玛特森技术公司 | 末端执行器和用于处理工件的系统 |
| CN112786510A (zh) * | 2019-11-04 | 2021-05-11 | 北京华卓精科科技股份有限公司 | 激光退火系统和激光退火方法 |
| WO2021194470A1 (en) | 2020-03-23 | 2021-09-30 | Lam Research Corporation | Mid-ring erosion compensation in substrate processing systems |
| CN111508890B (zh) * | 2020-04-28 | 2023-12-22 | 北京北方华创微电子装备有限公司 | 一种晶片装卸机构和半导体工艺设备 |
| CN112670206A (zh) * | 2020-12-21 | 2021-04-16 | 上海华力集成电路制造有限公司 | 一种改善晶圆破片的激光退火设备及其使用方法 |
| CN115547876A (zh) * | 2021-06-30 | 2022-12-30 | 上海微电子装备（集团）股份有限公司 | 基板边缘保护装置及半导体机台 |
| US12486576B2 (en) * | 2021-07-01 | 2025-12-02 | Applied Materials, Inc. | Shadow ring lift to improve wafer edge performance |
| KR20230041917A (ko) * | 2021-09-17 | 2023-03-27 | 삼성전자주식회사 | 건식 식각 장치 및 이를 이용한 웨이퍼 식각 시스템 |
| KR102896287B1 (ko) * | 2021-10-15 | 2025-12-04 | 세메스 주식회사 | 기판 승강 장치 및 기판 처리 장치 |
| US20250038040A1 (en) * | 2023-07-27 | 2025-01-30 | Applied Materials, Inc. | Lift frames for central heating, and related processing chambers and methods |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5079112A (en) * | 1989-08-07 | 1992-01-07 | At&T Bell Laboratories | Device manufacture involving lithographic processing |
| US5912468A (en) * | 1996-05-10 | 1999-06-15 | Kabushiki Kaisha Toshiba | Charged particle beam exposure system |
| US7277213B2 (en) * | 2004-12-03 | 2007-10-02 | Microvision, Inc. | Aperture plate and related system and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5146092A (en) * | 1990-05-23 | 1992-09-08 | Ntc Technology, Inc. | Gas analysis transducers with electromagnetic energy detector units |
| US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
| JP2601179Y2 (ja) | 1993-11-29 | 1999-11-08 | 日新電機株式会社 | 基板保持装置 |
| US6168668B1 (en) * | 1998-11-25 | 2001-01-02 | Applied Materials, Inc. | Shadow ring and guide for supporting the shadow ring in a chamber |
| US6589352B1 (en) | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
| US6627846B1 (en) | 1999-12-16 | 2003-09-30 | Oramir Semiconductor Equipment Ltd. | Laser-driven cleaning using reactive gases |
| DE10226603A1 (de) | 2002-06-14 | 2004-01-08 | Infineon Technologies Ag | Verfahren zum Strukturieren einer Siliziumschicht sowie dessen Verwendung zur Herstellung einer integrierten Halbleiterschaltung |
| US7166200B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
| US6835914B2 (en) | 2002-11-05 | 2004-12-28 | Mattson Technology, Inc. | Apparatus and method for reducing stray light in substrate processing chambers |
| CN1322563C (zh) * | 2004-01-18 | 2007-06-20 | 统宝光电股份有限公司 | 制备多晶硅膜层的激光退火装置及形成多晶硅膜层的方法 |
| JP3910603B2 (ja) | 2004-06-07 | 2007-04-25 | 株式会社東芝 | 熱処理装置、熱処理方法及び半導体装置の製造方法 |
| US20060286807A1 (en) | 2005-06-16 | 2006-12-21 | Jack Hwang | Use of active temperature control to provide emmisivity independent wafer temperature |
| US7368303B2 (en) | 2004-10-20 | 2008-05-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for temperature control in a rapid thermal processing system |
| US20070012557A1 (en) * | 2005-07-13 | 2007-01-18 | Applied Materials, Inc | Low voltage sputtering for large area substrates |
| US20070212859A1 (en) | 2006-03-08 | 2007-09-13 | Paul Carey | Method of thermal processing structures formed on a substrate |
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2008
- 2008-02-15 US US12/032,475 patent/US7754518B2/en active Active
-
2009
- 2009-02-04 KR KR1020107020693A patent/KR101608865B1/ko not_active Expired - Fee Related
- 2009-02-04 KR KR1020167005075A patent/KR101749041B1/ko active Active
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5079112A (en) * | 1989-08-07 | 1992-01-07 | At&T Bell Laboratories | Device manufacture involving lithographic processing |
| US5912468A (en) * | 1996-05-10 | 1999-06-15 | Kabushiki Kaisha Toshiba | Charged particle beam exposure system |
| US7277213B2 (en) * | 2004-12-03 | 2007-10-02 | Microvision, Inc. | Aperture plate and related system and method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104736011A (zh) * | 2013-12-27 | 2015-06-24 | Ykk株式会社 | 增强膜粘着装置及具有可分离式嵌插件的拉链 |
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| Publication number | Publication date |
|---|---|
| US7923280B2 (en) | 2011-04-12 |
| US7754518B2 (en) | 2010-07-13 |
| US20090209112A1 (en) | 2009-08-20 |
| KR20170072362A (ko) | 2017-06-26 |
| KR101608865B1 (ko) | 2016-04-04 |
| TW201507050A (zh) | 2015-02-16 |
| TWI545676B (zh) | 2016-08-11 |
| KR20100123724A (ko) | 2010-11-24 |
| KR20160030321A (ko) | 2016-03-16 |
| TW201001588A (en) | 2010-01-01 |
| EP2248150A4 (en) | 2012-03-07 |
| KR101749041B1 (ko) | 2017-06-20 |
| US20100273334A1 (en) | 2010-10-28 |
| CN105514001B (zh) | 2018-03-09 |
| CN101946302A (zh) | 2011-01-12 |
| JP5451643B2 (ja) | 2014-03-26 |
| CN101946302B (zh) | 2016-02-10 |
| JP2011512674A (ja) | 2011-04-21 |
| WO2009102600A1 (en) | 2009-08-20 |
| CN105514001A (zh) | 2016-04-20 |
| EP2248150A1 (en) | 2010-11-10 |
| KR101850088B1 (ko) | 2018-04-18 |
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