TWI462960B - 光阻下層膜形成組成物及使用其之光阻圖型之形成方法 - Google Patents

光阻下層膜形成組成物及使用其之光阻圖型之形成方法 Download PDF

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Publication number
TWI462960B
TWI462960B TW099122227A TW99122227A TWI462960B TW I462960 B TWI462960 B TW I462960B TW 099122227 A TW099122227 A TW 099122227A TW 99122227 A TW99122227 A TW 99122227A TW I462960 B TWI462960 B TW I462960B
Authority
TW
Taiwan
Prior art keywords
group
carbon atoms
underlayer film
following formula
photoresist
Prior art date
Application number
TW099122227A
Other languages
English (en)
Chinese (zh)
Other versions
TW201113317A (en
Inventor
Yoshiomi Hiroi
Tokio Nishita
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW201113317A publication Critical patent/TW201113317A/zh
Application granted granted Critical
Publication of TWI462960B publication Critical patent/TWI462960B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Epoxy Resins (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW099122227A 2009-07-07 2010-07-06 光阻下層膜形成組成物及使用其之光阻圖型之形成方法 TWI462960B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009160898 2009-07-07

Publications (2)

Publication Number Publication Date
TW201113317A TW201113317A (en) 2011-04-16
TWI462960B true TWI462960B (zh) 2014-12-01

Family

ID=43429144

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099122227A TWI462960B (zh) 2009-07-07 2010-07-06 光阻下層膜形成組成物及使用其之光阻圖型之形成方法

Country Status (3)

Country Link
JP (1) JP5522415B2 (ja)
TW (1) TWI462960B (ja)
WO (1) WO2011004721A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101805119B1 (ko) 2012-03-08 2017-12-06 닛산 가가쿠 고교 가부시키 가이샤 고밀착성 레지스트 하층막 형성용 조성물
CN108713164B (zh) * 2016-03-09 2022-03-18 日产化学工业株式会社 抗蚀剂下层膜形成用组合物及使用了该组合物的抗蚀剂图案的形成方法
US20210311396A1 (en) 2018-07-31 2021-10-07 Nissan Chemical Corporation Resist underlayer film-forming composition
JPWO2020209327A1 (ja) 2019-04-11 2020-10-15
US20230029997A1 (en) * 2019-12-04 2023-02-02 Nissan Chemical Corporation Composition for forming resist underlayer film
KR20220112264A (ko) * 2019-12-04 2022-08-10 닛산 가가쿠 가부시키가이샤 폴리머의 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009057458A1 (ja) * 2007-10-31 2009-05-07 Nissan Chemical Industries, Ltd. レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4053631B2 (ja) * 1997-10-08 2008-02-27 Ａｚエレクトロニックマテリアルズ株式会社 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体
US6846612B2 (en) * 2002-02-01 2005-01-25 Brewer Science Inc. Organic anti-reflective coating compositions for advanced microlithography
WO2005098542A1 (ja) * 2004-04-09 2005-10-20 Nissan Chemical Industries, Ltd. 縮合系ポリマーを有する半導体用反射防止膜
CN101160549B (zh) * 2005-04-19 2012-10-10 日产化学工业株式会社 含有具有乙烯二羰基结构的聚合物的形成光刻用防反射膜的组合物

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009057458A1 (ja) * 2007-10-31 2009-05-07 Nissan Chemical Industries, Ltd. レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法

Also Published As

Publication number Publication date
JPWO2011004721A1 (ja) 2012-12-20
WO2011004721A1 (ja) 2011-01-13
JP5522415B2 (ja) 2014-06-18
TW201113317A (en) 2011-04-16

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