TWI459931B - X-ray imaging device - Google Patents
X-ray imaging device Download PDFInfo
- Publication number
- TWI459931B TWI459931B TW099108567A TW99108567A TWI459931B TW I459931 B TWI459931 B TW I459931B TW 099108567 A TW099108567 A TW 099108567A TW 99108567 A TW99108567 A TW 99108567A TW I459931 B TWI459931 B TW I459931B
- Authority
- TW
- Taiwan
- Prior art keywords
- ray
- layer
- shielding layer
- imaging device
- aluminum
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims description 109
- 229910052782 aluminium Inorganic materials 0.000 claims description 95
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 95
- 238000001514 detection method Methods 0.000 claims description 33
- 239000004642 Polyimide Substances 0.000 claims description 10
- 229920001721 polyimide Polymers 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 199
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/244—Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009074656A JP5118661B2 (ja) | 2009-03-25 | 2009-03-25 | Ｘ線撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201118409A TW201118409A (en) | 2011-06-01 |
| TWI459931B true TWI459931B (zh) | 2014-11-11 |
Family
ID=42780865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099108567A TWI459931B (zh) | 2009-03-25 | 2010-03-23 | X-ray imaging device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8575559B2 (ja) |
| EP (1) | EP2413162B1 (ja) |
| JP (1) | JP5118661B2 (ja) |
| KR (1) | KR101627005B1 (ja) |
| CN (1) | CN102282480B (ja) |
| TW (1) | TWI459931B (ja) |
| WO (1) | WO2010110172A1 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5720028B1 (ja) | 2013-10-03 | 2015-05-20 | 株式会社 システムスクエア | 包装体の検査装置 |
| CN107072608A (zh) * | 2014-11-06 | 2017-08-18 | Ge医疗系统环球技术有限公司 | 医疗诊断用x射线探测器 |
| CN105700003B (zh) * | 2015-05-21 | 2019-12-13 | 成都理工大学 | 一种半导体制冷的X射线硅pin探测器 |
| KR101815279B1 (ko) | 2016-08-29 | 2018-01-04 | 주식회사 디알텍 | 방사선 감지 소자 및 이의 제조 방법 |
| WO2018129445A1 (en) * | 2017-01-09 | 2018-07-12 | Massachusetts Institute Of Technology | Integrated optical blocking filter for compact x-ray imaging detector |
| DE112018006397T5 (de) * | 2017-12-15 | 2020-08-20 | Horiba Ltd. | Silizium-drift-detektionselement, silizium-drift-detektor und strahlungsdetektionsvorrichtung |
| US11579319B2 (en) * | 2019-12-02 | 2023-02-14 | X Development Llc | Nuclear radiation detection |
| CN110911501A (zh) * | 2019-12-04 | 2020-03-24 | 中国工程物理研究院材料研究所 | 一种探测装置 |
| CN111473792B (zh) * | 2020-05-19 | 2021-11-02 | 中国科学院微电子研究所 | 一种脉冲星x射线探测装置 |
| CN112378932B (zh) * | 2020-10-27 | 2023-06-30 | 国网辽宁省电力有限公司丹东供电公司 | 一种带屏蔽装置的x光数字成像dr带电检测设备 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000055839A (ja) * | 1998-08-05 | 2000-02-25 | Nippon Steel Corp | 蛍光ｘ線分析装置 |
| JP2001249184A (ja) * | 2000-03-06 | 2001-09-14 | Matsushita Electric Ind Co Ltd | Ｘ線画像検出装置 |
| JP2005274379A (ja) * | 2004-03-25 | 2005-10-06 | Fuiisa Kk | 放射線検出器用遮蔽体及び放射線検出器 |
| JP2008107203A (ja) * | 2006-10-25 | 2008-05-08 | Shimadzu Corp | Ｘ線検出器 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6185860A (ja) * | 1984-10-03 | 1986-05-01 | Olympus Optical Co Ltd | 固体撮像装置およびその製造方法 |
| JPH077830B2 (ja) * | 1987-12-18 | 1995-01-30 | 日本電気株式会社 | 放射線検出用固体撮像素子 |
| JPH06302795A (ja) | 1993-04-19 | 1994-10-28 | Olympus Optical Co Ltd | 外部光電効果型固体撮像装置 |
| JPH06310699A (ja) * | 1993-04-22 | 1994-11-04 | Olympus Optical Co Ltd | 積層型固体撮像装置 |
| JP3908813B2 (ja) * | 1996-12-26 | 2007-04-25 | 浜松ホトニクス株式会社 | Ｘ線検知器 |
| CN100449764C (zh) * | 2003-11-18 | 2009-01-07 | 松下电器产业株式会社 | 光电探测器 |
| JP2005274277A (ja) * | 2004-03-24 | 2005-10-06 | Microscopic Scan:Kk | Ｘ線顕微ｃｔ装置 |
| JP4722675B2 (ja) * | 2005-11-08 | 2011-07-13 | 日油技研工業株式会社 | 放射線被ばく管理衣服 |
-
2009
- 2009-03-25 JP JP2009074656A patent/JP5118661B2/ja active Active
-
2010
- 2010-03-18 WO PCT/JP2010/054682 patent/WO2010110172A1/ja active Application Filing
- 2010-03-18 CN CN2010800045055A patent/CN102282480B/zh active Active
- 2010-03-18 EP EP10755970.0A patent/EP2413162B1/en active Active
- 2010-03-18 US US13/256,870 patent/US8575559B2/en active Active
- 2010-03-18 KR KR1020117013138A patent/KR101627005B1/ko active IP Right Grant
- 2010-03-23 TW TW099108567A patent/TWI459931B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000055839A (ja) * | 1998-08-05 | 2000-02-25 | Nippon Steel Corp | 蛍光ｘ線分析装置 |
| JP2001249184A (ja) * | 2000-03-06 | 2001-09-14 | Matsushita Electric Ind Co Ltd | Ｘ線画像検出装置 |
| JP2005274379A (ja) * | 2004-03-25 | 2005-10-06 | Fuiisa Kk | 放射線検出器用遮蔽体及び放射線検出器 |
| JP2008107203A (ja) * | 2006-10-25 | 2008-05-08 | Shimadzu Corp | Ｘ線検出器 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8575559B2 (en) | 2013-11-05 |
| KR20110139186A (ko) | 2011-12-28 |
| US20120025089A1 (en) | 2012-02-02 |
| EP2413162B1 (en) | 2018-05-30 |
| JP5118661B2 (ja) | 2013-01-16 |
| CN102282480B (zh) | 2013-06-26 |
| KR101627005B1 (ko) | 2016-06-03 |
| JP2010223922A (ja) | 2010-10-07 |
| TW201118409A (en) | 2011-06-01 |
| WO2010110172A1 (ja) | 2010-09-30 |
| EP2413162A4 (en) | 2017-06-21 |
| EP2413162A1 (en) | 2012-02-01 |
| CN102282480A (zh) | 2011-12-14 |
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