JP2010223922A - X線撮像装置 - Google Patents
X線撮像装置 Download PDFInfo
- Publication number
- JP2010223922A JP2010223922A JP2009074656A JP2009074656A JP2010223922A JP 2010223922 A JP2010223922 A JP 2010223922A JP 2009074656 A JP2009074656 A JP 2009074656A JP 2009074656 A JP2009074656 A JP 2009074656A JP 2010223922 A JP2010223922 A JP 2010223922A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- layer
- shielding layer
- aluminum
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 104
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 89
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 89
- 238000001514 detection method Methods 0.000 claims abstract description 55
- 229920001721 polyimide Polymers 0.000 claims description 14
- 239000004642 Polyimide Substances 0.000 claims description 13
- 230000000694 effects Effects 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 180
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/244—Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】 入射したX線を検出する複数の検出画素が配列されたX線検出部が一方の面11側に設けられ、他方の面12がX線入射面となっている裏面入射型の固体撮像素子10と、撮像素子10の入射面12上に設けられ、検出対象となるX線よりも長波長の光の遮蔽に用いられる遮蔽層20とによってX線撮像装置1を構成する。遮蔽層20は、入射面12上に直接に設けられる第1アルミニウム層21と、第1アルミニウム層21上に設けられる第2アルミニウム層22と、第1、第2アルミニウム層21、22の間に設けられ、紫外光の遮蔽に用いられる紫外光遮蔽層25とを有する。
【選択図】 図1
Description
Claims (5)
- 入射したX線を検出する複数の検出画素が配列されたX線検出部が一方の面側に設けられ、他方の面がX線入射面となっている裏面入射型の固体撮像素子と、
前記固体撮像素子の前記X線入射面上に設けられ、検出対象となるX線よりも長波長の光の遮蔽に用いられる遮蔽層とを備え、
前記遮蔽層は、
前記X線入射面上に直接に設けられる第1アルミニウム層と、
前記第1アルミニウム層上に設けられる第2アルミニウム層と、
前記第1アルミニウム層及び前記第2アルミニウム層の間に設けられ、紫外光の遮蔽に用いられる紫外光遮蔽層と
を有することを特徴とするX線撮像装置。 - 前記紫外光遮蔽層は、ポリイミド層からなることを特徴とする請求項1記載のX線撮像装置。
- 前記第2アルミニウム層は、前記遮蔽層における最外層となっていることを特徴とする請求項1または2記載のX線撮像装置。
- 前記第1アルミニウム層と前記第2アルミニウム層とを電気的に接続する導通部が設けられていることを特徴とする請求項1〜3のいずれか一項記載のX線撮像装置。
- 前記導通部は、前記固体撮像素子に対して、前記X線検出部に対応する領域を除く領域内に設けられていることを特徴とする請求項4記載のX線撮像装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009074656A JP5118661B2 (ja) | 2009-03-25 | 2009-03-25 | X線撮像装置 |
KR1020117013138A KR101627005B1 (ko) | 2009-03-25 | 2010-03-18 | X선 촬상장치 |
CN2010800045055A CN102282480B (zh) | 2009-03-25 | 2010-03-18 | X射线摄像装置 |
PCT/JP2010/054682 WO2010110172A1 (ja) | 2009-03-25 | 2010-03-18 | X線撮像装置 |
EP10755970.0A EP2413162B1 (en) | 2009-03-25 | 2010-03-18 | X-ray imaging device |
US13/256,870 US8575559B2 (en) | 2009-03-25 | 2010-03-18 | X-ray imaging device |
TW099108567A TWI459931B (zh) | 2009-03-25 | 2010-03-23 | X-ray imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009074656A JP5118661B2 (ja) | 2009-03-25 | 2009-03-25 | X線撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010223922A true JP2010223922A (ja) | 2010-10-07 |
JP5118661B2 JP5118661B2 (ja) | 2013-01-16 |
Family
ID=42780865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009074656A Active JP5118661B2 (ja) | 2009-03-25 | 2009-03-25 | X線撮像装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8575559B2 (ja) |
EP (1) | EP2413162B1 (ja) |
JP (1) | JP5118661B2 (ja) |
KR (1) | KR101627005B1 (ja) |
CN (1) | CN102282480B (ja) |
TW (1) | TWI459931B (ja) |
WO (1) | WO2010110172A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101815279B1 (ko) | 2016-08-29 | 2018-01-04 | 주식회사 디알텍 | 방사선 감지 소자 및 이의 제조 방법 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5720028B1 (ja) | 2013-10-03 | 2015-05-20 | 株式会社 システムスクエア | 包装体の検査装置 |
CN107072608A (zh) * | 2014-11-06 | 2017-08-18 | Ge医疗系统环球技术有限公司 | 医疗诊断用x射线探测器 |
CN105700003B (zh) * | 2015-05-21 | 2019-12-13 | 成都理工大学 | 一种半导体制冷的X射线硅pin探测器 |
WO2018129445A1 (en) * | 2017-01-09 | 2018-07-12 | Massachusetts Institute Of Technology | Integrated optical blocking filter for compact x-ray imaging detector |
DE112018006397T5 (de) * | 2017-12-15 | 2020-08-20 | Horiba Ltd. | Silizium-drift-detektionselement, silizium-drift-detektor und strahlungsdetektionsvorrichtung |
US11579319B2 (en) * | 2019-12-02 | 2023-02-14 | X Development Llc | Nuclear radiation detection |
CN110911501A (zh) * | 2019-12-04 | 2020-03-24 | 中国工程物理研究院材料研究所 | 一种探测装置 |
CN111473792B (zh) * | 2020-05-19 | 2021-11-02 | 中国科学院微电子研究所 | 一种脉冲星x射线探测装置 |
CN112378932B (zh) * | 2020-10-27 | 2023-06-30 | 国网辽宁省电力有限公司丹东供电公司 | 一种带屏蔽装置的x光数字成像dr带电检测设备 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6185860A (ja) * | 1984-10-03 | 1986-05-01 | Olympus Optical Co Ltd | 固体撮像装置およびその製造方法 |
JPH01161184A (ja) * | 1987-12-18 | 1989-06-23 | Nec Corp | 放射線検出用固体撮像素子 |
JPH10186042A (ja) * | 1996-12-26 | 1998-07-14 | Hamamatsu Photonics Kk | X線検知器 |
JP2000055839A (ja) * | 1998-08-05 | 2000-02-25 | Nippon Steel Corp | 蛍光x線分析装置 |
JP2001249184A (ja) * | 2000-03-06 | 2001-09-14 | Matsushita Electric Ind Co Ltd | X線画像検出装置 |
JP2005274379A (ja) * | 2004-03-25 | 2005-10-06 | Fuiisa Kk | 放射線検出器用遮蔽体及び放射線検出器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06302795A (ja) | 1993-04-19 | 1994-10-28 | Olympus Optical Co Ltd | 外部光電効果型固体撮像装置 |
JPH06310699A (ja) * | 1993-04-22 | 1994-11-04 | Olympus Optical Co Ltd | 積層型固体撮像装置 |
CN100449764C (zh) * | 2003-11-18 | 2009-01-07 | 松下电器产业株式会社 | 光电探测器 |
JP2005274277A (ja) * | 2004-03-24 | 2005-10-06 | Microscopic Scan:Kk | X線顕微ct装置 |
JP4722675B2 (ja) * | 2005-11-08 | 2011-07-13 | 日油技研工業株式会社 | 放射線被ばく管理衣服 |
JP4910628B2 (ja) | 2006-10-25 | 2012-04-04 | 株式会社島津製作所 | X線検出器 |
-
2009
- 2009-03-25 JP JP2009074656A patent/JP5118661B2/ja active Active
-
2010
- 2010-03-18 WO PCT/JP2010/054682 patent/WO2010110172A1/ja active Application Filing
- 2010-03-18 CN CN2010800045055A patent/CN102282480B/zh active Active
- 2010-03-18 EP EP10755970.0A patent/EP2413162B1/en active Active
- 2010-03-18 US US13/256,870 patent/US8575559B2/en active Active
- 2010-03-18 KR KR1020117013138A patent/KR101627005B1/ko active IP Right Grant
- 2010-03-23 TW TW099108567A patent/TWI459931B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6185860A (ja) * | 1984-10-03 | 1986-05-01 | Olympus Optical Co Ltd | 固体撮像装置およびその製造方法 |
JPH01161184A (ja) * | 1987-12-18 | 1989-06-23 | Nec Corp | 放射線検出用固体撮像素子 |
JPH10186042A (ja) * | 1996-12-26 | 1998-07-14 | Hamamatsu Photonics Kk | X線検知器 |
JP2000055839A (ja) * | 1998-08-05 | 2000-02-25 | Nippon Steel Corp | 蛍光x線分析装置 |
JP2001249184A (ja) * | 2000-03-06 | 2001-09-14 | Matsushita Electric Ind Co Ltd | X線画像検出装置 |
JP2005274379A (ja) * | 2004-03-25 | 2005-10-06 | Fuiisa Kk | 放射線検出器用遮蔽体及び放射線検出器 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101815279B1 (ko) | 2016-08-29 | 2018-01-04 | 주식회사 디알텍 | 방사선 감지 소자 및 이의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
US8575559B2 (en) | 2013-11-05 |
KR20110139186A (ko) | 2011-12-28 |
TWI459931B (zh) | 2014-11-11 |
US20120025089A1 (en) | 2012-02-02 |
EP2413162B1 (en) | 2018-05-30 |
JP5118661B2 (ja) | 2013-01-16 |
CN102282480B (zh) | 2013-06-26 |
KR101627005B1 (ko) | 2016-06-03 |
TW201118409A (en) | 2011-06-01 |
WO2010110172A1 (ja) | 2010-09-30 |
EP2413162A4 (en) | 2017-06-21 |
EP2413162A1 (en) | 2012-02-01 |
CN102282480A (zh) | 2011-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5118661B2 (ja) | X線撮像装置 | |
US9541654B2 (en) | X-ray scintillator containing a multi-layered coating | |
US10591616B2 (en) | Spectral imaging detector | |
US8729478B2 (en) | Dual screen radiographic detector with improved spatial sampling | |
EP2847619B1 (en) | Multi-layer horizontal computed tomography (ct) detector array with at least one thin photosensor array layer disposed between at least two scintillator array layers | |
JP5196739B2 (ja) | 放射線撮像装置及び放射線撮像システム | |
CN101657737B (zh) | 放射线检测装置和放射线检测系统 | |
WO2011129132A1 (ja) | 放射線検出器モジュール | |
JP4455534B2 (ja) | 放射線検出器およびその製造方法 | |
US20110147602A1 (en) | Radiographic imaging apparatus, radiographic imaging system, and method of producing radiographic imaging apparatus | |
JP2007101256A (ja) | X線撮像装置及びx線ct装置 | |
US20200264319A1 (en) | Radiation image capturing apparatus and radiation image capturing system | |
JP2017200522A (ja) | 放射線撮像装置及び放射線撮像システム | |
JP2005203708A (ja) | X線撮像素子 | |
US7432509B2 (en) | Radiographic imaging system | |
JP2013072722A (ja) | 放射線検出器、放射線画像撮影装置及びプログラム | |
JP5789223B2 (ja) | 放射線撮像装置及び放射線撮像システム | |
JP2008089459A (ja) | X線検出器、シンチレータパネル、x線検出器の製造方法およびシンチレータパネルの製造方法 | |
JP2011058964A (ja) | X線平面検出器及びその製造方法 | |
JP2019153692A (ja) | 放射線撮像装置および放射線撮像システム | |
JP2008134078A (ja) | 放射線検出器用部品および放射線検出器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111111 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121016 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121019 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5118661 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151026 Year of fee payment: 3 |