TWI459538B - 並聯電容器及具有並聯電容器之射頻功率電晶體 - Google Patents

並聯電容器及具有並聯電容器之射頻功率電晶體 Download PDF

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Publication number
TWI459538B
TWI459538B TW096121169A TW96121169A TWI459538B TW I459538 B TWI459538 B TW I459538B TW 096121169 A TW096121169 A TW 096121169A TW 96121169 A TW96121169 A TW 96121169A TW I459538 B TWI459538 B TW I459538B
Authority
TW
Taiwan
Prior art keywords
capacitor
metal
shunt capacitor
shunt
unit cell
Prior art date
Application number
TW096121169A
Other languages
English (en)
Chinese (zh)
Other versions
TW200812067A (en
Inventor
任 蕭衛
拉梅 丹尼爾Ｊ
Original Assignee
飛思卡爾半導體公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 飛思卡爾半導體公司 filed Critical 飛思卡爾半導體公司
Publication of TW200812067A publication Critical patent/TW200812067A/zh
Application granted granted Critical
Publication of TWI459538B publication Critical patent/TWI459538B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/423—Shielding layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/601—Capacitive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
TW096121169A 2006-06-12 2007-06-12 並聯電容器及具有並聯電容器之射頻功率電晶體 TWI459538B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80452606P 2006-06-12 2006-06-12
US11/760,775 US7508021B2 (en) 2006-06-12 2007-06-10 RF power transistor device with high performance shunt capacitor and method thereof

Publications (2)

Publication Number Publication Date
TW200812067A TW200812067A (en) 2008-03-01
TWI459538B true TWI459538B (zh) 2014-11-01

Family

ID=38832761

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096121169A TWI459538B (zh) 2006-06-12 2007-06-12 並聯電容器及具有並聯電容器之射頻功率電晶體

Country Status (5)

Country Link
US (1) US7508021B2 (https=)
JP (1) JP2009540620A (https=)
KR (1) KR101298425B1 (https=)
TW (1) TWI459538B (https=)
WO (1) WO2007146899A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102169895A (zh) * 2010-02-25 2011-08-31 上海北京大学微电子研究院 射频金属-氧化物-半导体场效应晶体管
US9502886B2 (en) * 2013-03-15 2016-11-22 Taiwan Semiconductor Manufacturing Company Limited MiM capacitor
US9899967B1 (en) * 2017-02-01 2018-02-20 Infineon Technologies Ag Embedded harmonic termination on high power RF transistor
US11929317B2 (en) 2020-12-07 2024-03-12 Macom Technology Solutions Holdings, Inc. Capacitor networks for harmonic control in power devices
US12230614B2 (en) 2021-12-17 2025-02-18 Macom Technology Solutions Holdings, Inc. Multi-typed integrated passive device (IPD) components and devices and processes implementing the same
US12183669B2 (en) * 2021-12-17 2024-12-31 Macom Technology Solutions Holdings, Inc. Configurable metal—insulator—metal capacitor and devices
US12417966B2 (en) 2021-12-17 2025-09-16 Macom Technology Solutions Holdings, Inc. IPD components having SiC substrates and devices and processes implementing the same
US20250192024A1 (en) * 2023-12-06 2025-06-12 Advanced Micro Devices, Inc. Semiconductor devices including metal wire pairs

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218239B1 (en) * 1998-11-17 2001-04-17 United Microelectronics Corp. Manufacturing method of a bottom plate
US20030020107A1 (en) * 2001-07-25 2003-01-30 Motorola, Inc. Structure and method for fabricating semiconductor capacitor structures utilizing the formation of a compliant structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5351163A (en) * 1992-12-30 1994-09-27 Westinghouse Electric Corporation High Q monolithic MIM capacitor
JPH0864764A (ja) * 1994-08-25 1996-03-08 Nippon Motorola Ltd ユニットキャパシタ
JP3874210B2 (ja) * 1996-09-11 2007-01-31 株式会社デンソー モノリシックマイクロ波集積回路
US6208500B1 (en) * 1998-11-25 2001-03-27 Microchip Technology Incorporated High quality factor capacitor
US6181200B1 (en) * 1999-04-09 2001-01-30 Integra Technologies, Inc. Radio frequency power device
JP2004221317A (ja) * 2003-01-15 2004-08-05 Renesas Technology Corp 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218239B1 (en) * 1998-11-17 2001-04-17 United Microelectronics Corp. Manufacturing method of a bottom plate
US20030020107A1 (en) * 2001-07-25 2003-01-30 Motorola, Inc. Structure and method for fabricating semiconductor capacitor structures utilizing the formation of a compliant structure

Also Published As

Publication number Publication date
KR101298425B1 (ko) 2013-08-20
WO2007146899A2 (en) 2007-12-21
US20070297120A1 (en) 2007-12-27
WO2007146899A3 (en) 2008-07-24
KR20090028519A (ko) 2009-03-18
TW200812067A (en) 2008-03-01
US7508021B2 (en) 2009-03-24
JP2009540620A (ja) 2009-11-19

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