JP2009540620A - 高性能分路キャパシタを有するｒｆパワートランジスタデバイスとその使用方法 - Google Patents

高性能分路キャパシタを有するｒｆパワートランジスタデバイスとその使用方法 Download PDF

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Publication number
JP2009540620A
JP2009540620A JP2009515598A JP2009515598A JP2009540620A JP 2009540620 A JP2009540620 A JP 2009540620A JP 2009515598 A JP2009515598 A JP 2009515598A JP 2009515598 A JP2009515598 A JP 2009515598A JP 2009540620 A JP2009540620 A JP 2009540620A
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JP
Japan
Prior art keywords
shunt capacitor
capacitor
shunt
unit cell
lower plate
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Pending
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JP2009515598A
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English (en)
Japanese (ja)
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JP2009540620A5 (https=
Inventor
レン、シャオウェイ
ジェイ． ラメイ、ダニエル
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NXP USA Inc
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NXP USA Inc
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Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2009540620A publication Critical patent/JP2009540620A/ja
Publication of JP2009540620A5 publication Critical patent/JP2009540620A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/423—Shielding layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/601—Capacitive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers

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  • Semiconductor Integrated Circuits (AREA)
JP2009515598A 2006-06-12 2007-06-12 高性能分路キャパシタを有するｒｆパワートランジスタデバイスとその使用方法 Pending JP2009540620A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80452606P 2006-06-12 2006-06-12
US11/760,775 US7508021B2 (en) 2006-06-12 2007-06-10 RF power transistor device with high performance shunt capacitor and method thereof
PCT/US2007/070930 WO2007146899A2 (en) 2006-06-12 2007-06-12 Rf power transistor device with high performance shunt capacitor and method thereof

Publications (2)

Publication Number Publication Date
JP2009540620A true JP2009540620A (ja) 2009-11-19
JP2009540620A5 JP2009540620A5 (https=) 2010-07-29

Family

ID=38832761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009515598A Pending JP2009540620A (ja) 2006-06-12 2007-06-12 高性能分路キャパシタを有するｒｆパワートランジスタデバイスとその使用方法

Country Status (5)

Country Link
US (1) US7508021B2 (https=)
JP (1) JP2009540620A (https=)
KR (1) KR101298425B1 (https=)
TW (1) TWI459538B (https=)
WO (1) WO2007146899A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102169895A (zh) * 2010-02-25 2011-08-31 上海北京大学微电子研究院 射频金属-氧化物-半导体场效应晶体管
US9502886B2 (en) * 2013-03-15 2016-11-22 Taiwan Semiconductor Manufacturing Company Limited MiM capacitor
US9899967B1 (en) * 2017-02-01 2018-02-20 Infineon Technologies Ag Embedded harmonic termination on high power RF transistor
US11929317B2 (en) 2020-12-07 2024-03-12 Macom Technology Solutions Holdings, Inc. Capacitor networks for harmonic control in power devices
US12230614B2 (en) 2021-12-17 2025-02-18 Macom Technology Solutions Holdings, Inc. Multi-typed integrated passive device (IPD) components and devices and processes implementing the same
US12183669B2 (en) * 2021-12-17 2024-12-31 Macom Technology Solutions Holdings, Inc. Configurable metal—insulator—metal capacitor and devices
US12417966B2 (en) 2021-12-17 2025-09-16 Macom Technology Solutions Holdings, Inc. IPD components having SiC substrates and devices and processes implementing the same
US20250192024A1 (en) * 2023-12-06 2025-06-12 Advanced Micro Devices, Inc. Semiconductor devices including metal wire pairs

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864764A (ja) * 1994-08-25 1996-03-08 Nippon Motorola Ltd ユニットキャパシタ
JPH1093019A (ja) * 1996-09-11 1998-04-10 Denso Corp モノリシックマイクロ波集積回路
JP2004221317A (ja) * 2003-01-15 2004-08-05 Renesas Technology Corp 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5351163A (en) * 1992-12-30 1994-09-27 Westinghouse Electric Corporation High Q monolithic MIM capacitor
US6218239B1 (en) * 1998-11-17 2001-04-17 United Microelectronics Corp. Manufacturing method of a bottom plate
US6208500B1 (en) * 1998-11-25 2001-03-27 Microchip Technology Incorporated High quality factor capacitor
US6181200B1 (en) * 1999-04-09 2001-01-30 Integra Technologies, Inc. Radio frequency power device
US20030020107A1 (en) * 2001-07-25 2003-01-30 Motorola, Inc. Structure and method for fabricating semiconductor capacitor structures utilizing the formation of a compliant structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864764A (ja) * 1994-08-25 1996-03-08 Nippon Motorola Ltd ユニットキャパシタ
JPH1093019A (ja) * 1996-09-11 1998-04-10 Denso Corp モノリシックマイクロ波集積回路
JP2004221317A (ja) * 2003-01-15 2004-08-05 Renesas Technology Corp 半導体装置

Also Published As

Publication number Publication date
KR101298425B1 (ko) 2013-08-20
TWI459538B (zh) 2014-11-01
WO2007146899A2 (en) 2007-12-21
US20070297120A1 (en) 2007-12-27
WO2007146899A3 (en) 2008-07-24
KR20090028519A (ko) 2009-03-18
TW200812067A (en) 2008-03-01
US7508021B2 (en) 2009-03-24

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