TWI456658B - 圖樣化有機材料以同時形成絕緣體及半導體之方法及藉該方法形成之裝置 - Google Patents

圖樣化有機材料以同時形成絕緣體及半導體之方法及藉該方法形成之裝置 Download PDF

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TWI456658B
TWI456658B TW094138482A TW94138482A TWI456658B TW I456658 B TWI456658 B TW I456658B TW 094138482 A TW094138482 A TW 094138482A TW 94138482 A TW94138482 A TW 94138482A TW I456658 B TWI456658 B TW I456658B
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precursor
light
heating
semiconductor
pentacene
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TW094138482A
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TW200633062A (en
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Fredericus J Touwslager
Gerwin H Gelinck
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Creator Technology Bv
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Formation Of Insulating Films (AREA)

Claims (25)

  1. 一種用於製造一電子裝置之方法，其包括以下步驟：形成(102)一用於形成一固化狀態下之一半導體材料之前驅體材料層；及在光及周圍氧氣存在下加熱(108)該前驅體以在曝露於光下之區域中形成一絕緣體且在未曝露在該光下之區域中形成一半導體，其中該前驅體為一稠五苯前驅體，且在光及周圍氧氣存在下將該前驅體圖案化，藉此形成一稠五苯的氧化物。
  2. 如請求項1之方法，其中該加熱步驟包括使該前驅體材料曝露(104)在可見、UV及/或IR範圍中的光下。
  3. 如請求項2之方法，其中該光包括具有一在約0.1mW/cm2 與1W/cm2 之間之強度的白色光。
  4. 如請求項1之方法，其中該加熱步驟包括使用一雷射器將該前驅體材料同時曝露(104)於光及熱下。
  5. 如請求項1之方法，其中該加熱該前驅體之步驟包括加熱該前驅體至攝氏150度以上。
  6. 如請求項1之方法，其中該加熱該前驅體之步驟包括於氧氣存在下加熱(108)該前驅體以在曝露於該光下之區域中形成一種氧化物。
  7. 如請求項1之方法，其中該絕緣體包括醌。
  8. 如請求項7之方法，其中該醌包括6,13-稠五苯醌，或一更大的同胞材料。
  9. 如請求項1之方法，其中該半導體材料包括稠五 苯。
  10. 如請求項1之方法，其中該於光存在下加熱該前驅體的步驟包括，在選定區域中使用一光源同時加熱及照射(106)該前驅體且隨後加熱(108)該前驅體以在未經照射之區域中形成一半導體。
  11. 一種用於製造一電子裝置之方法，其包括以下步驟：形成(102)一用於形成一固化狀態下之一半導體材料之前驅體材料層；及加熱(108)該前驅體，同時根據一圖樣選擇性地使該前驅體材料的若干部分曝露於光下，以同時在曝露於光下之區域中形成一絕緣體且在未曝露於光下之區域中形成一半導體，其中該前驅體為一稠五苯前驅體，且在光及周圍氧氣存在下將該前驅體圖案化，藉此形成一稠五苯的氧化物。
  12. 如請求項11之方法，其中該加熱步驟包括使該前驅體材料曝露(104)於可見光下。
  13. 如請求項11之方法，其中該加熱步驟包括使該前驅體材料曝露於可見、IR及/或UV光中的至少一種下。
  14. 如請求項11之方法，其中該加熱該前驅體的步驟包括加熱該前驅體至攝氏150度以上達至少5秒。
  15. 如請求項11之方法，其中該加熱該前驅體的步驟包括，在氧氣存在下加熱該前驅體以在曝露於該光下的區域中形成一種氧化物。
  16. 如請求項11之方法，其中該絕緣體包括6,13-稠 五苯醌。
  17. 如請求項11之方法，其中該半導體材料包括稠五苯。
  18. 如請求項11之方法，其中該加熱步驟包括在選定區域中使用一光源同時加熱及照射(106)該前驅體且隨後加熱(108)該前驅體以在未經照射之區域中形成一半導體。
  19. 一種半導體裝置，其包括：至少一層(11)，其包括在一加熱過程期間由一相同前驅體材料(10)形成之半導體材料(20)及絕緣體材料(22)，其中該半導體材料(20)係藉由該加熱過程形成且該絕緣體(22)係藉由該加熱過程及曝露於可見光而選擇性地形成，其中該至少一層為一稠五苯前驅體，且在光及周圍氧氣存在下將該前驅體圖案化，藉此形成一稠五苯的氧化物。
  20. 如請求項19之半導體裝置，其中該前驅體材料包括一或多個6,13-二氫-6,13-(2,3,4,5-四氯-2,4-環己二烯)-稠五苯，及/或6,13-二氫-6,13-(2,3,4,5-四溴-2,4-環己二烯)-稠五苯。
  21. 如請求項19之半導體裝置，其中該半導體裝置包括一電子元件(20、22)。
  22. 如請求項19之半導體裝置，其中該可見光包括白色光或黃色光。
  23. 如請求項19之半導體裝置，其中該半導體材料包 括稠五苯。
  24. 如請求項19之半導體裝置，其中該絕緣體材料包括稠五苯醌。
  25. 如請求項24之半導體裝置，其中該稠五苯醌包括6,13-稠五苯醌。
TW094138482A 2004-11-05 2005-11-02 圖樣化有機材料以同時形成絕緣體及半導體之方法及藉該方法形成之裝置 TWI456658B (zh)

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JP2008519451A (ja) 2008-06-05
US8030124B2 (en) 2011-10-04
CN101053090A (zh) 2007-10-10
WO2006048833A1 (en) 2006-05-11
KR20070083946A (ko) 2007-08-24
TW200633062A (en) 2006-09-16
CN101053090B (zh) 2010-12-22
KR101184366B1 (ko) 2012-09-20
US20080246024A1 (en) 2008-10-09
EP1815501A1 (en) 2007-08-08
JP5175102B2 (ja) 2013-04-03

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