TWI456631B - 溫度控制離子植入技術 - Google Patents

溫度控制離子植入技術 Download PDF

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TWI456631B
TWI456631B TW096127927A TW96127927A TWI456631B TW I456631 B TWI456631 B TW I456631B TW 096127927 A TW096127927 A TW 096127927A TW 96127927 A TW96127927 A TW 96127927A TW I456631 B TWI456631 B TW I456631B
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wafer
ion implantation
temperature
platen
cooling
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Jonathan Gerald England
Richard Stephen Muka
Edwin A Arevalo
Ziwei Fang
Vikram Singh
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Varian Semiconductor Equipment
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    • H—ELECTRICITY
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • H—ELECTRICITY
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/336—Changing physical properties of treated surfaces

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Claims (35)

  1. 一種溫度控制離子植入的裝置，所述裝置包含：壓板，以在離子植入期間將晶圓固持在單個晶圓處理腔室中，所述壓板包括：晶圓夾持機構，其用以將所述晶圓固定至所述壓板上且提供所述晶圓與所述壓板之間的預定熱接觸，以及一或多個加熱元件，其用以對所述壓板進行預加熱且將所述壓板維持在高於室溫之預定溫度範圍上；後冷卻站，以在離子植入之後使所述晶圓冷卻；晶圓搬運總成，以將所述晶圓加載至所述經預加熱之壓板上且將所述晶圓自所述壓板移除至所述後冷卻站；以及預加熱站，其用以在將所述晶圓加載至所述經預加熱之壓板上之前對所述晶圓進行預加熱，所述預加熱站是與所述後冷卻站以及所述壓板分離。
  2. 如申請專利範圍第1項所述之溫度控制離子植入的裝置，其中將所述晶圓自所述壓板移除至所述後冷卻站而無所述壓板之實質冷卻。
  3. 如申請專利範圍第1項所述之溫度控制離子植入的裝置，其中，在將所述晶圓自所述壓板移除之後，所述晶圓搬運總成立即將第二晶圓加載至所述壓板上以對所述第二晶圓執行高溫離子植入。
  4. 如申請專利範圍第3項所述之溫度控制離子植入的裝置，其中以每小時至少20個晶圓之速率對晶圓執行高溫離子植入。
  5. 如申請專利範圍第1項所述之溫度控制離子植入的裝置，其中所述後冷卻站為晶圓加載鎖定總成之一部分。
  6. 如申請專利範圍第1項所述之溫度控制離子植入的裝置，其中所述後冷卻站固持一或多個熱晶圓且使用乾燥氣體來使所述一或多個熱晶圓冷卻至接近室溫。
  7. 如申請專利範圍第1項所述之溫度控制離子植入的裝置，其中所述後冷卻站亦經組態以在將所述晶圓加載至所述經預加熱之壓板上之前對所述晶圓進行預加熱。
  8. 如申請專利範圍第1項所述之溫度控制離子植入的裝置，其中所述預加熱站為晶圓加載鎖定總成之一部分。
  9. 如申請專利範圍第1項所述之溫度控制離子植入的裝置，其中所述晶圓搬運總成包含至少一端接器，其耐受所述高於室溫之預定溫度範圍。
  10. 如申請專利範圍第1項所述之溫度控制離子植入的裝置，其中所述壓板包含：介電板，其具有嵌入於其中之所述一或多個加熱元件；以及熱隔斷板，其耦接至所述介電板，所述熱隔斷板具有一或多個曲徑槽以增加對熱傳遞之抵抗性。
  11. 如申請專利範圍第1項所述之溫度控制離子植入的裝置，其中所述壓板包含：加熱器部分，其具有嵌入於其中之所述一或多個加熱元件；冷卻部分，其經由在所述冷卻部分與所述加熱器部分 之間具有可調整熱接觸之界面耦接至所述加熱器部分，以使所述壓板冷卻；以及控制單元，其耦接至所述冷卻部分以及所述加熱器部分且控制所述界面，以使得所述晶圓在離子植入期間處於所述預定溫度範圍上。
  12. 如申請專利範圍第1項所述之溫度控制離子植入的裝置，其更經組態以支援對所述晶圓之室溫離子植入或低溫離子植入。
  13. 如申請專利範圍第12項所述之溫度控制離子植入的裝置，其中，對於所述低溫離子植入，在將所述晶圓加載至所述壓板上之前對所述晶圓進行預急冷。
  14. 如申請專利範圍第13項所述之溫度控制離子植入的裝置，其中所述壓板未經加熱且在所述低溫離子植入期間與所述經預急冷之晶圓具有低熱接觸。
  15. 如申請專利範圍第14項所述之溫度控制離子植入的裝置，其中所述低熱接觸是藉由連同支撐結構使所述晶圓提昇高於所述壓板而達成。
  16. 如申請專利範圍第12項所述之溫度控制離子植入的裝置，其更包含：一或多個冷卻元件，以使所述壓板冷卻；以及控制機構，其耦接至所述加熱元件與所述冷卻元件兩者，以在高溫模式、室溫模式以及低溫模式之間切換離子植入。
  17. 如申請專利範圍第12項所述之溫度控制離子植入 的裝置，其中所述後冷卻站更經組態以對所述晶圓進行預急冷。
  18. 如申請專利範圍第12項所述之溫度控制離子植入的裝置，其更包含與所述後冷卻站分離之預急冷站。
  19. 如申請專利範圍第12項所述之溫度控制離子植入的裝置，其更包含後加溫站以在所述低溫離子植入之後使所述晶圓升溫。
  20. 如申請專利範圍第12項所述之溫度控制離子植入的裝置，其中所述壓板包含加熱元件與冷卻元件兩者以使得所述壓板是在規定溫度範圍內，所述裝置更包含：與所述壓板分離之加熱站；與所述壓板分離之冷卻站；以及控制單元，其用以協調所述晶圓在所述壓板、所述加熱站與所述冷卻站之間的移動且在離子植入期間控制所述晶圓之溫度，使得單個晶圓離子植入可持續地以選自由高溫模式、室溫模式以及低溫模式組成之群組之溫度模式對一系列晶圓執行。
  21. 如申請專利範圍第1項所述之溫度控制離子植入的裝置，其更包含預加熱站以在將所述晶圓加載至所述經預加熱之壓板上之前，將所述晶圓預加熱至與所述預定溫度範圍相關聯之初始溫度。
  22. 如申請專利範圍第1項所述之溫度控制離子植入的裝置，其更包含電漿產生機構以當將所述晶圓固持於所述壓板上時，產生惰性電漿以將所述晶圓預加熱至與所述預 定溫度範圍相關聯之初始溫度。
  23. 一種溫度控制離子植入的方法，所述方法包含以下步驟：提供具有加熱元件與冷卻元件兩者之壓板、與所述壓板分離之加熱站，以及與所述壓板分離之冷卻站；以及協調晶圓在所述壓板、所述加熱站以及所述冷卻站之間的移動且控制所述晶圓在離子植入期間之溫度，其中：對於高溫模式，將所述晶圓加載至所述經預加熱之壓板上以便以高於室溫之溫度進行離子植入，且隨後卸載至所述冷卻站以進行冷卻，以及對於低溫模式，藉由所述冷卻站對所述晶圓進行預急冷、加載至所述經預急冷之壓板上以便以低於室溫之溫度進行離子植入，及隨後卸載至所述加熱站以進行升溫。
  24. 一種溫度控制離子植入的方法，所述方法包含以下步驟：提供其中具有壓板之單個晶圓處理腔室；將所述壓板預加熱至高於室溫之預定溫度範圍；將晶圓置放於所述經預加熱之壓板上；在所述高於室溫之預定溫度範圍內對所述晶圓執行離子植入；當所述壓板仍處於或接近所述高於室溫之預定溫度範圍時，將所述晶圓自所述壓板移除；以及使所述晶圓在與所述壓板分離之位置上冷卻，其中所述方法更包含在將所述晶圓加載至所述經預加 熱之壓板之前，對所述晶圓進行預加熱。
  25. 如申請專利範圍第24項所述之溫度控制離子植入的方法，其中將所述晶圓自所述壓板移除以進行植入後冷卻而無對所述壓板之實質冷卻。
  26. 如申請專利範圍第24項所述之溫度控制離子植入的方法，其更包含：在將所述晶圓自所述壓板移除之後，立即將第二晶圓加載至所述壓板上以對所述第二晶圓執行高溫離子植入。
  27. 如申請專利範圍第26項所述之溫度控制離子植入的方法，其中高溫離子植入是以每小時至少20個晶圓之速率對晶圓執行。
  28. 如申請專利範圍第24項所述之溫度控制離子植入的方法，其更包含：使用乾燥氣體來使所述晶圓冷卻至接近室溫。在將所述晶圓加載至所述經預加熱之壓板之前，對所述晶圓進行預加熱。
  29. 如申請專利範圍第24項所述之溫度控制離子植入的方法，其更包含：在同一單個晶圓處理腔室中執行室溫離子植入或低溫離子植入。
  30. 如申請專利範圍第29項所述之溫度控制離子植入的方法，其中，對於所述低溫離子植入，在將所述晶圓加載至所述壓板上之前，對所述晶圓進行預急冷。
  31. 如申請專利範圍第30項所述之溫度控制離子植入 的方法，其中所述壓板未經加熱且在所述低溫離子植入期間與所述經預急冷之晶圓具有低熱接觸。
  32. 如申請專利範圍第24項所述之溫度控制離子植入的方法，其更包含：當所述晶圓固持於所述壓板上時，產生惰性電漿以將所述晶圓預加熱至與所述預定溫度範圍相關聯之初始溫度。
  33. 一種高溫離子植入的裝置，所述裝置包含：壓板，以將晶圓固持在電漿處理腔室中，所述壓板包括晶圓夾持機構，以將所述晶圓固定於所述壓板上且提供所述晶圓與所述壓板之間的預定熱接觸；以及電漿產生機構，其經組態為：當將所述晶圓固持於所述壓板上時，使用惰性電漿將所述晶圓預加熱至高於室溫之預定溫度範圍，以及對所述經預加熱之晶圓執行電漿摻雜或離子植入。
  34. 如申請專利範圍第33項所述之高溫離子植入的裝置，其更包含：冷卻站，其用以在所述電漿摻雜或離子植入之後使所述晶圓冷卻；以及晶圓搬運總成，其用以將所述晶圓加載至所述壓板上且將所述晶圓自所述壓板移除至所述冷卻站。
  35. 如申請專利範圍第33項所述之高溫離子植入的裝置，其中在所述電漿摻雜或離子植入期間將所述壓板維持於所述預定溫度範圍內。
TW096127927A 2006-08-15 2007-07-31 溫度控制離子植入技術 TWI456631B (zh)

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US83787606P 2006-08-15 2006-08-15
US11/770,220 US8450193B2 (en) 2006-08-15 2007-06-28 Techniques for temperature-controlled ion implantation

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TWI456631B true TWI456631B (zh) 2014-10-11

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