TWI456269B - 光罩用基板、光罩、光罩之製造方法及圖案轉印方法 - Google Patents

光罩用基板、光罩、光罩之製造方法及圖案轉印方法 Download PDF

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Publication number
TWI456269B
TWI456269B TW101113080A TW101113080A TWI456269B TW I456269 B TWI456269 B TW I456269B TW 101113080 A TW101113080 A TW 101113080A TW 101113080 A TW101113080 A TW 101113080A TW I456269 B TWI456269 B TW I456269B
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TW
Taiwan
Prior art keywords
main surface
photomask
δzb
manufacturing
pattern
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TW101113080A
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English (en)
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TW201245775A (en
Inventor
Masayoshi Tsuchiya
Hisami Ikebe
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Hoya Corp
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Publication of TW201245775A publication Critical patent/TW201245775A/zh
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Publication of TWI456269B publication Critical patent/TWI456269B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Claims (10)

  1. 一種光罩用基板，其特徵在於：其係用於在主表面上形成轉印用圖案而形成光罩之厚度為T(mm)者，且在位於上述第1主表面之背面之第2主表面上，相隔10(mm)之任意2點之高低差為△Zb(μm)時，對應於上述第1主表面之圖案形成區域之上述第2主表面之區域內的△Zb滿足△Zb≦(1/T)×3.0。
  2. 一種光罩，其特徵在於：其係於第1主表面上形成有轉印用圖案之厚度為T(mm)者，且在位於上述第1主表面之背面之第2主表面上，相隔10(mm)之任意2點之高低差為△Zb(μm)時，對應於上述第1主表面之圖案形成區域之上述第2主表面之區域內的△Zb滿足△Zb≦(1/T)×3.0。
  3. 如請求項2之光罩，其係用於近接曝光。
  4. 如請求項2之光罩，其係用於製造彩色濾光片。
  5. 一種光罩之製造方法，其特徵在於：其係於第1主表面上具有轉印用圖案之光罩的製造方法，且包含如下步驟：準備光罩基板，其係厚度為T(mm)之光罩用基板，且在位於上述第1主表面之背面之第2主表面上的相隔10(mm)之任意2點的高低差為△Zb(μm)時，對應於上述第1主表面之圖案形成區域之上述第2主表面之區域內的 △Zb滿足△Zb≦(1/T)×3.0；於上述光罩之第1主表面上形成光學膜；及對上述光學膜實施圖案化處理，藉此形成轉印用圖案。
  6. 一種光罩之製造方法，其特徵在於：其係於第1主表面上具有轉印用圖案之光罩的製造方法，且包含如下步驟：準備光罩基板，其係厚度為T(mm)之光罩用基板，且在位於上述第1主表面之背面之第2主表面上隔開特定之相隔距離P(mm)而等間隔地設定複數個測量點，分別求出該複數個測量點相對於上述第2主表面之基準面之高度Z，將上述複數個測量點之高度Z之最大值與最小值之差設為高度變動之最大值△Zbmax時，滿足△Zbmax≦(P/T)×0.3；於上述所準備之光罩基板之第1主表面上，形成光學膜；於上述光學膜上形成光阻膜；將上述光罩基板載置於描繪裝置之平台上，描繪特定之轉印用圖案；及對描繪後之上述光罩基板，實施光阻顯影與光學膜之圖案化，從而形成上述轉印用圖案。
  7. 如請求項6之光罩之製造方法，其中將上述相隔距離P設 定為5≦P≦15(mm)。
  8. 如請求項5或6之光罩之製造方法，其中上述光罩係用於近接曝光。
  9. 如請求項5或6之光罩之製造方法，其中上述轉印用圖案係用於製造彩色濾光片。
  10. 一種圖案轉印方法，其係使用近接式曝光機而將光罩所具有之轉印用圖案轉印至被轉印體上者，其特徵在於：藉由上述近接式曝光機來曝光如請求項2至4中任一項之光罩。
TW101113080A 2011-04-13 2012-04-12 光罩用基板、光罩、光罩之製造方法及圖案轉印方法 TWI456269B (zh)

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JP (1) JP5937409B2 (zh)
KR (1) KR101319634B1 (zh)
CN (1) CN102736402B (zh)
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Publication number Priority date Publication date Assignee Title
JP5970021B2 (ja) * 2013-08-20 2016-08-17 Hoya株式会社 フォトマスクの製造方法、描画装置、フォトマスクの検査方法、フォトマスクの検査装置、及び表示装置の製造方法
WO2018020994A1 (ja) * 2016-07-27 2018-02-01 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、半導体デバイスの製造方法、マスクブランク用基板、マスクブランク及び転写用マスク

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TW201027239A (en) * 2008-11-26 2010-07-16 Hoya Corp Substrate for mask blank

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CN102736402B (zh) 2014-07-23
JP2012230369A (ja) 2012-11-22
CN102736402A (zh) 2012-10-17
KR20120116877A (ko) 2012-10-23
KR101319634B1 (ko) 2013-10-17
TW201245775A (en) 2012-11-16
JP5937409B2 (ja) 2016-06-22

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