TWI453945B - Method for manufacturing led package - Google Patents
Method for manufacturing led package Download PDFInfo
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- TWI453945B TWI453945B TW099136015A TW99136015A TWI453945B TW I453945 B TWI453945 B TW I453945B TW 099136015 A TW099136015 A TW 099136015A TW 99136015 A TW99136015 A TW 99136015A TW I453945 B TWI453945 B TW I453945B
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Description
本發明涉及一種發光二極體封裝結構之形成方法。 The invention relates to a method for forming a light emitting diode package structure.
習知之發光二極體封裝結構之切割方法一般採用鐳射切割,但係為了降低切割成本以及簡化制程,目前在發光二極體制程上大多採用裂片(breaking)方式。具體方法為:在用於形成多個封裝結構之封裝基板上預切割多條切割線,在完成封裝制程後,沿著所述切割線將多個發光二極體封裝結構分別剝離下來,得到多個分離之發光二極體封裝結構。但係為了保持封裝基板整體結構,防止在預切割或後續封裝制程時封裝基板出現斷裂,切割線不能切之太深,這就導致了在剝離發光二極體封裝結構之過程中,由於應力無法很好地進行傳遞至切割線處,容易造成剝離後之發光二極體封裝結構邊緣不規則,從而影響到發光二極體封裝結構之良率。 The cutting method of the conventional light-emitting diode package structure generally adopts laser cutting, but in order to reduce the cutting cost and simplify the process, most of the current light-emitting diode process uses a breaking method. The specific method is: pre-cutting a plurality of cutting lines on a package substrate for forming a plurality of package structures, and after completing the packaging process, separating the plurality of light emitting diode package structures along the cutting lines respectively, thereby obtaining a plurality of A separate light-emitting diode package structure. However, in order to maintain the overall structure of the package substrate, the package substrate is prevented from being broken during the pre-cutting or subsequent packaging process, and the cutting line cannot be cut too deeply, which results in the inability to remove the light-emitting diode package structure due to stress. The transfer to the cutting line is good, and the edge of the light-emitting diode package structure after peeling is easily irregular, thereby affecting the yield of the light-emitting diode package structure.
有鑒於此,有必要提供一種剝離後之發光二極體封裝結構邊緣規則,良率較高之發光二極體封裝結構之形成方法。 In view of the above, it is necessary to provide a method for forming a light-emitting diode package structure in which the edge of the light-emitting diode package structure is peeled off and the yield is high.
一種發光二極體封裝結構之形成方法,其包括以下幾個步驟:提供一發光二極體封裝基板,其相對之上表面和下表面分別形成多條相交之切割線,所述切割線將所述發光二極體封裝基板均勻 分割成多個單片;在所述切割線之交點處開設貫通所述發光二極體封裝基板上表面及下表面之通孔;在所述通孔內壁靠近所述發光二極體封裝基板之上表面及下表面之上下兩端沿所述切割線分別開設切口;將多個發光二極體晶粒分別設置在所述每個單片上;利用一遮蓋板遮蓋在所述發光二極體封裝基板上,所述遮蓋板對應所述每個單片開設有開孔;藉由所述遮蓋板之開孔在所述每個單片上形成封裝層;沿著所述切割線分別剝離下每個單片,從而形成多個發光二極體封裝結構。 A method for forming a light emitting diode package structure, comprising the steps of: providing a light emitting diode package substrate, wherein a plurality of intersecting cutting lines are respectively formed on the upper surface and the lower surface, and the cutting line is The light emitting diode package substrate is uniform Dividing into a plurality of single pieces; opening a through hole penetrating the upper surface and the lower surface of the light emitting diode package substrate at an intersection of the cutting lines; and the inner wall of the through hole is adjacent to the light emitting diode package substrate a slit is formed along the cutting line on the upper surface and the lower surface of the lower surface; a plurality of light emitting diode crystal grains are respectively disposed on each of the single sheets; and the light emitting diode is covered by a cover plate On the body package substrate, the cover plate is provided with an opening corresponding to each of the single pieces; an encapsulation layer is formed on each of the single pieces by the opening of the cover plate; and respectively stripped along the cutting line Each of the individual pieces is formed to form a plurality of light emitting diode package structures.
相較於現有技術,本發明之發光二極體封裝結構之形成方法中,發光二極體封裝基板在上下表面分別預切割有切割線,並且在上下表面上沿所述切割線分別開設切口,從而在剝離過程中,有利於應力之傳遞,剝離更容易,剝離後之發光二極體封裝結構之邊緣更規則,良率比較高。 In the method for forming a light-emitting diode package structure of the present invention, the light-emitting diode package substrate is pre-cut with cutting lines on the upper and lower surfaces, respectively, and slits are respectively formed along the cutting lines on the upper and lower surfaces. Therefore, in the stripping process, the transfer of stress is facilitated, and the peeling is easier. The edge of the light-emitting diode package structure after peeling is more regular, and the yield is relatively high.
100‧‧‧發光二極體封裝基板 100‧‧‧Light Emitting Diode Substrate
110‧‧‧上表面 110‧‧‧ upper surface
120‧‧‧下表面 120‧‧‧lower surface
130‧‧‧切割線 130‧‧‧ cutting line
140‧‧‧單片 140‧‧‧one piece
141‧‧‧凹槽 141‧‧‧ Groove
142‧‧‧上電極 142‧‧‧Upper electrode
143‧‧‧下電極 143‧‧‧ lower electrode
150‧‧‧通孔 150‧‧‧through hole
160‧‧‧切口 160‧‧‧ incision
200‧‧‧發光二極體晶粒 200‧‧‧Light-emitting diode grains
300‧‧‧遮蓋板 300‧‧‧ Cover
310‧‧‧開孔 310‧‧‧ openings
400‧‧‧封裝層 400‧‧‧Encapsulation layer
500‧‧‧注膠頭 500‧‧‧Injection head
圖1為本發明實施方式中之發光二極體封裝基板之俯視圖。 1 is a plan view of a light emitting diode package substrate in accordance with an embodiment of the present invention.
圖2為本發明實施方式中之發光二極體封裝基板之仰視圖。 2 is a bottom view of a light emitting diode package substrate in accordance with an embodiment of the present invention.
圖3為圖1中之發光二極體封裝基板沿III-III之剖面示意圖。 3 is a cross-sectional view of the light emitting diode package substrate of FIG. 1 taken along III-III.
圖4為將圖1中之發光二極體封裝基板設置發光二極體晶粒之俯視 圖。 4 is a plan view showing the light emitting diode chip in the light emitting diode package substrate of FIG. Figure.
圖5為利用一遮蓋板遮蓋發光二極體封裝基板並注入封裝膠體之示意圖。 FIG. 5 is a schematic diagram of covering a light emitting diode package substrate with a cover plate and injecting the package colloid.
以下將結合附圖對本發明作進一步之詳細說明。 The invention will be further described in detail below with reference to the accompanying drawings.
本發明實施方式提供之發光二極體封裝結構之形成方法包括以下幾個步驟: The method for forming a light emitting diode package structure provided by the embodiment of the invention includes the following steps:
步驟一,請參閱圖1至圖3,提供一發光二極體封裝基板100,其包括相對之上表面110以及下表面120,在所述上表面110以及下表面120分別對應預切割形成多條相交之橫向及縱向之切割線130,所述切割線130將所述發光二極體封裝基板100均勻分割成多個單片140。為保持所述發光二極體封裝基板100之整體結構,防止其斷裂,所述切割線130之深度不宜太深,其具體深度應視基板材質而定。在所述發光二極體封裝基板100之上表面110上,所述每個單片140都開設有凹槽141,所述凹槽141中設置有上電極142。在所述發光二極體封裝基板100之下表面120上設置有與所述上電極142相對應之下電極143,所述上電極142與所述下電極143彼此電性連接。在本實施方式中,所述發光二極體封裝基板100為一陶瓷基板。 In the first step, referring to FIG. 1 to FIG. 3, a light emitting diode package substrate 100 is provided, which includes an upper surface 110 and a lower surface 120. The upper surface 110 and the lower surface 120 respectively form a plurality of pre-cuts. The intersecting transverse and longitudinal cutting lines 130 divide the light emitting diode package substrate 100 into a plurality of individual sheets 140. In order to maintain the overall structure of the LED package substrate 100 and prevent it from breaking, the depth of the cutting line 130 should not be too deep, and the specific depth should be determined depending on the material of the substrate. On the upper surface 110 of the LED package substrate 100, each of the individual pieces 140 is provided with a groove 141, and the upper electrode 142 is disposed in the groove 141. An electrode 143 corresponding to the upper electrode 142 is disposed on the lower surface 120 of the LED package substrate 100, and the upper electrode 142 and the lower electrode 143 are electrically connected to each other. In the embodiment, the LED package substrate 100 is a ceramic substrate.
步驟二,在所述橫向及縱向之切割線130之交點處開設貫通所述發光二極體封裝基板100上表面110以及下表面120之通孔150。 Step 2, a through hole 150 penetrating the upper surface 110 and the lower surface 120 of the LED package substrate 100 is formed at an intersection of the horizontal and vertical cutting lines 130.
步驟三,在所述通孔150內壁靠近所述發光二極體封裝基板100之上表面110以及下表面120之上下兩端沿所述切割線130分別開設 一切口160。所述切口160與所述切割線130連通,並且比所述切割線130之深度要深。在本實施方式中,所述切口160在垂直所述發光二極體封裝基板100之方向上呈“V”字型。 Step 3: The inner wall of the through hole 150 is adjacent to the upper surface 110 of the LED package substrate 100 and the upper and lower ends of the lower surface 120 are respectively opened along the cutting line 130. A slit 160. The slit 160 is in communication with the cutting line 130 and is deeper than the depth of the cutting line 130. In the present embodiment, the slit 160 has a "V" shape in a direction perpendicular to the LED package substrate 100.
步驟四,請參閱圖4,將多個發光二極體晶粒200分別設置在所述每個單片140之凹槽141中,並且電性連接其中之上電極142。 Step 4, referring to FIG. 4, a plurality of LED dipoles 200 are respectively disposed in the recesses 141 of each of the individual sheets 140, and electrically connected to the upper electrodes 142 therein.
步驟五,請參閱圖5,利用一遮蓋板300遮蓋在所述發光二極體封裝基板100上,所述遮蓋板300對應所述每個單片140之凹槽141開設有開孔310。 In step 5, referring to FIG. 5, the cover plate 300 is covered on the LED package substrate 100, and the cover plate 300 defines an opening 310 corresponding to the recess 141 of each of the single pieces 140.
步驟六,藉由所述遮蓋板300之開孔310向每個單片140之凹槽141中注入封裝膠體,形成封裝層400,覆蓋所述發光二極體晶粒200。在本實施方式中,利用一注膠頭500藉由所述遮蓋板300之開孔310向每個單片140之凹槽141中注入封裝膠體。所述封裝膠體可以為環氧樹脂、矽樹脂或者係兩者組合材料構成。所述封裝膠體中還可包括有螢光粉,所述螢光粉可以為石榴石結構化合物、矽酸鹽、氮化物、氮氧化物、磷化物、硫化物或前述材料之組合。 In step six, the encapsulant is injected into the recess 141 of each of the single sheets 140 by the opening 310 of the cover 300 to form an encapsulation layer 400 covering the LED die 200. In the present embodiment, an encapsulant is injected into the recess 141 of each of the individual sheets 140 by the opening 310 of the cover 300 by means of a plastic injection head 500. The encapsulant may be composed of an epoxy resin, a resin, or a combination thereof. The encapsulant may further include a phosphor powder, and the phosphor powder may be a garnet structure compound, a niobate, a nitride, an oxynitride, a phosphide, a sulfide, or a combination thereof.
步驟七,沿著所述切割線130分別剝離下每個單片140,從而形成多個發光二極體封裝結構。 In step seven, each of the individual pieces 140 is peeled off along the cutting line 130, thereby forming a plurality of light emitting diode package structures.
在剝離過程中,當對所述發光二極體封裝基板100之上表面110施以下壓力時,上表面110之切口160處就會產生張應力,該應力將會向下延伸尋找所述發光二極體封裝基板100之相對脆弱之區域,從而就會延伸至所述下表面120之相對較深之切口160處,進而將發光二極體封裝結構從所述發光二極體封裝基板100上剝離下來。由於在所述發光二極體封裝基板100之上表面110以及下表面 分別開設相對於切割線130較深之切口160,從而更有利於應力之傳遞,剝離更容易,剝離後之發光二極體封裝結構之邊緣更規則,良率比較高。另外,由於在對發光二極體進行注膠形成封裝層之過程中,利用遮蓋板300遮蓋住所述切割線130以及切口160,從而液態之封裝材料不會流入到切割線130以及切口160中,因而不會對切割線130以及切口160處之應力傳遞產生影響。 During the stripping process, when the pressure on the upper surface 110 of the LED package substrate 100 is applied, a tensile stress is generated at the slit 160 of the upper surface 110, and the stress will be extended downward to find the light-emitting diode. The relatively fragile region of the polar package substrate 100 extends to the relatively deep slit 160 of the lower surface 120 to peel the light emitting diode package from the LED package substrate 100. Come down. Due to the upper surface 110 and the lower surface of the light emitting diode package substrate 100 The slits 160 deeper than the cutting line 130 are respectively opened, which is more favorable for the transfer of stress, and the peeling is easier. The edge of the light-emitting diode package structure after peeling is more regular and the yield is relatively high. In addition, since the cutting line 130 and the slit 160 are covered by the cover 300 during the injection molding of the light-emitting diode, the liquid packaging material does not flow into the cutting line 130 and the slit 160. Thus, there is no influence on the stress transmission at the cutting line 130 and the slit 160.
相較於現有技術,本發明之發光二極體封裝結構之形成方法中,發光二極體封裝基板在上下表面分別預切割有切割線,並且在上下表面上沿所述切割線分別開設切口,從而在剝離過程中,有利於應力之傳遞,剝離更容易,剝離後之發光二極體封裝結構之邊緣更規則,良率比較高。 In the method for forming a light-emitting diode package structure of the present invention, the light-emitting diode package substrate is pre-cut with cutting lines on the upper and lower surfaces, respectively, and slits are respectively formed along the cutting lines on the upper and lower surfaces. Therefore, in the stripping process, the transfer of stress is facilitated, and the peeling is easier. The edge of the light-emitting diode package structure after peeling is more regular, and the yield is relatively high.
另外,本領域技術人員還可在本發明精神內做其他變化,當然,這些依據本發明精神所做之變化,都應包含在本發明所要求保護之範圍之內。 In addition, those skilled in the art can make other changes in the spirit of the present invention. Of course, the changes made in accordance with the spirit of the present invention should be included in the scope of the present invention.
100‧‧‧發光二極體封裝基板 100‧‧‧Light Emitting Diode Substrate
141‧‧‧凹槽 141‧‧‧ Groove
200‧‧‧發光二極體晶粒 200‧‧‧Light-emitting diode grains
300‧‧‧遮蓋板 300‧‧‧ Cover
310‧‧‧開孔 310‧‧‧ openings
400‧‧‧封裝層 400‧‧‧Encapsulation layer
500‧‧‧注膠頭 500‧‧‧Injection head
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TWI453945B true TWI453945B (en) | 2014-09-21 |
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US20090152665A1 (en) * | 2007-12-14 | 2009-06-18 | Advanced Optoelectronic Technology Inc. | Fabricating methods of photoelectric devices and package structures thereof |
TW201032351A (en) * | 2009-02-24 | 2010-09-01 | Advanced Optoelectronic Tech | Side-emitting type semiconductor light emitting device package and manufacturing process thereof |
TW201036208A (en) * | 2009-03-19 | 2010-10-01 | Visera Technologies Co Ltd | Light emitting device |
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US20090152665A1 (en) * | 2007-12-14 | 2009-06-18 | Advanced Optoelectronic Technology Inc. | Fabricating methods of photoelectric devices and package structures thereof |
TW201032351A (en) * | 2009-02-24 | 2010-09-01 | Advanced Optoelectronic Tech | Side-emitting type semiconductor light emitting device package and manufacturing process thereof |
TW201036208A (en) * | 2009-03-19 | 2010-10-01 | Visera Technologies Co Ltd | Light emitting device |
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