JP5207807B2 - Chip component type LED - Google Patents

Description

  The present invention relates to a chip component type LED (Light Emitting Diode) for surface mounting, and more particularly to a chip component type LED used as a light source for various display panels, backlights of liquid crystal display devices, illumination switches, and the like.

  Conventionally, chip component type LEDs have been used as light sources for various display panels, backlights of liquid crystal display devices, illumination switches, and the like.

  FIG. 10 is an explanatory view showing an example of a conventional chip component type LED.

  The conventional chip component type LED has insulating substrates 81 and 82 having a two-layer structure. A through hole 83 is formed in the upper insulating substrate 82, and the bottom of the through hole 83 (that is, the lower insulating substrate 81). One wiring pattern 84 is formed extending to the upper surface), an LED chip 85 is mounted on the wiring pattern 84 in the through hole 83, and the surface of the insulating substrate 82 including the LED chip 85 and the fine metal wire 87. Is sealed with a transparent resin 88.

  However, according to the conventional chip component type LED shown in FIG. 10, two insulating substrates 81 and 82 are required, and the LED chip 85 is mounted on the lower insulating substrate 82. Since the minimum thickness that can be mounted is required, there is a problem that it is difficult to reduce the thickness and the cost is increased.

  As a solution to such a problem, there is a chip component type LED disclosed in Japanese Patent Application Laid-Open No. 07-235696.

  FIG. 11 is an explanatory view showing another example of a conventional chip component type LED.

In the chip component type LED disclosed in Japanese Patent Application Laid-Open No. 07-235696, a thin copper plate 89 is bonded to the back surface of the insulating substrate 82 instead of the lower insulating substrate 81 shown in FIG. As a result, the chip component type LED is made thinner.
Japanese Patent Application Laid-Open No. 07-235696

  However, in recent years, there is a need for a technique for realizing a thinner chip component type LED by further reducing the height of a thin LED chip. However, a technology has been established to reduce the thickness of the chip component type LED by using a copper plate or the like instead of the insulating substrate like the chip component type LED disclosed in Japanese Patent Application Laid-Open No. 07-235696. It is very difficult to make the LED chip itself thin.

  Specifically, an LED chip that outputs ultraviolet, blue, green, and orange light is formed using a nitride semiconductor, and the LED chip using the nitride semiconductor is thin because the crystal is hard. It is difficult to make an LED chip. In addition, LED chips that output green to infrared light are mainly formed using InGaAlP semiconductors or GaAs semiconductors, and LED chips formed using these InGaAlP semiconductors or GaAs semiconductors. Although it is easy to produce a thin LED chip because the crystal is soft, there is a limit to making the LED chip thinner in consideration of handling of the LED chip and the like. For these reasons, the LED chip is higher than the substrate from the insulating substrate or the like, and the upper part of the LED chip protrudes upward from the opening of the recess formed in the substrate. And when the LED chip mounted in the recessed part formed in the said board | substrate is sealed with transparent resin, the problem that a chip | tip crack and a crack generate | occur | produce from the site | part vicinity which the LED chip protruded has arisen.

  In the above-mentioned chip component type LED disclosed in Japanese Patent Application Laid-Open No. 07-235696, an embodiment in which an LED chip higher than the thickness of the upper insulating substrate 82 in the vertical sectional direction is mounted is completely described. It has not been.

  The present invention was devised to solve such problems, and its purpose is to prevent cracking and cracking of the LED chip in the chip component type LED in which the LED chip is mounted in the through hole formed in the substrate. An object of the present invention is to provide a chip component type LED that can be prevented.

  In order to solve the above-described problems, the chip component type LED of the present invention has an insulating structure in which a first concave hole 3a for mounting an LED chip and a second concave hole 3b for connecting a thin metal wire are formed as shown in FIG. A thin metal plate 2a serving as a first wiring pattern is formed in a portion including the first concave hole 3a of the substrate 1, and a thin metal plate 2b serving as a second wiring pattern is formed in a portion including the second concave hole 3b. The LED chip 5 is mounted on the metal thin plate 2a in the first concave hole 3a, and the LED chip 5 is electrically connected to the metal thin plate 2b in the second concave hole 3b via the metal thin wire 6, and the first The LED chip 5 including one concave hole 3a and a part of the fine metal wire 6 are sealed with a first sealing resin portion 71 formed using a first transparent resin containing silicone resin fine particles 71a, and the first 1 of the insulating substrate 1 including the sealing resin portion 71 The surface is sealed with a second sealing resin portion 72 formed using a second transparent resin, and the first sealing resin portion 71 and the second sealing resin portion 72 are formed of different materials. It is something like that. Further, a light diffusing agent or a silane coupling agent may be used instead of the silicone resin fine particles. Further, the first sealing resin portion may seal the LED chip including the first concave hole and the entire metal fine line including the second concave hole. Furthermore, as the LED chip, one having a dimension (height) in the vertical cross-sectional direction larger than a dimension (thickness) in the vertical cross-sectional direction of the insulating substrate is used.

  Thereby, when forming resin which covers LED chip 5, since liquid silicone resin containing silicone resin particulates, a light diffusing agent, or a silane coupling agent is used, silicone resin particulates, a light diffusing agent, or a silane coupling agent Therefore, the amount of the liquid silicone resin is substantially reduced by the content of. Therefore, even when the LED chip 5 having a dimension (height) in the vertical cross-sectional direction larger than the dimension (thickness) in the vertical cross-sectional direction of the insulating substrate is used, there is a defect that the LED chip is cracked or cracked. Can be reduced.

Further, the chip component-type LED according to the present invention is configured so that the first and second recessed holes are straddled on the partition wall portion that partitions the first and second recessed holes of the insulating substrate. A concave groove is formed, and a substantially central portion of the fine metal wire is wire-bonded to the bottom surface of the concave groove.

According to this configuration, the portion connected to the LED chip of the metal thin wire and the portion excluding the vicinity thereof can be arranged at a lower position, so there is an advantage that the height of the wire loop (metal thin wire) can be reduced. As a result, it is possible to obtain a chip component type LED that is thinner.

  The first transparent resin is preferably a liquid silicone resin having a soft hardness after curing, and the second transparent resin is preferably a liquid epoxy resin having a hard hardness after curing.

  The light diffusing agent is, for example, calcium carbonate, silica, silicone, zinc sulfide, zinc oxide, titanium oxide, titanium phosphate, magnesium titanate, mica, glass filler, barium sulfate, clay (clay), talc, or modified. Rubber-like elastic body formed using silicone resin, or inorganic diffusing agent of polymethylsilsesoxane, or acrylic, styrene, polyester, polyolefin, urethane, nylon, methacrylate-styrene, An organic fluorine-based or norbornene-based organic diffusing agent is preferable.

  Moreover, it is preferable that the bottom face of the first recessed hole and the bottom face of the second recessed hole have the same height or substantially the same height.

  A plurality of the second concave holes may be formed (for example, as shown in FIG. 4, the second concave hole 3b and the third concave hole 3c for connecting the fine metal wires).

  In this case, the surface two-electrode element can be mounted as an LED chip. It is particularly preferable when the substrate constituting the LED chip is an insulator.

  Moreover, it is preferable that the inner peripheral surface of the said 1st recessed hole and the 2nd recessed hole is formed in the inclined surface which expands gradually toward the surface side from the back surface side of the said insulated substrate.

  Since this invention was comprised as mentioned above, in the chip component type LED by which an LED chip is mounted in the through-hole formed in the board | substrate, generation | occurrence | production of a crack and a crack of an LED chip can be prevented.

  Hereinafter, embodiments of the chip component type LED of the present invention will be described.

  In this specification, a resin called “silicone resin” after curing is referred to as “liquid silicone resin” before curing. In the present invention, the dimension (height) of the LED chip in the vertical sectional direction is larger than the dimension (thickness) of the insulating substrate in the vertical sectional direction.

< Basic form 1 >
First, basic form 1 of the chip component type LED of the present invention will be described with reference to the drawings.

FIG. 1 is a cross-sectional view showing a basic form 1 of a chip component type LED of the present invention.

  This chip component type LED 10 is formed on the back side of the insulating substrate 1 in which the first concave hole (through hole) 3a for mounting the LED chip and the second concave hole (through hole) 3b for connecting the metal thin wire are formed. Metal (Cu) thin films 2a and 2b which are wiring patterns corresponding to the respective recessed holes are formed in an electrically separated state. Further, on the surface side of the insulating substrate 1, a metal thin film 4a serving as a first wiring pattern is formed in a portion including the first concave hole 3a, and a metal thin film serving as a second wiring pattern in a portion including the second concave hole 3b. 4b is formed. In such a wiring structure, the LED chip 5 is mounted on the metal thin film 4a on the bottom surface portion of the first recessed hole 3a, and the LED chip 5 is formed on the bottom surface portion of the second recessed hole 3b via the metal thin wire 6. In this state, the entire surface of the insulating substrate 1 including the LED chip 5 and the thin metal wire 6 is sealed with the sealing resin portion 7.

  In this chip component type LED, by directly mounting the LED chip 5 on the metal thin films 4a and 2a, the conventional lower substrate (insulating substrate or copper plate) is omitted and the height of the metal thin wire 6 is made lower than before. Thinner.

Here, in the basic form 1 , the sealing resin portion 7 includes the first sealing resin portion 71 that seals a part of the LED chip 5 and the metal thin wire 6 including the first recessed hole 3a, and the first sealing. The second sealing resin portion 72 seals the entire surface of the insulating substrate 1 including the resin portion 71. Although details will be described in a later manufacturing method, the first sealing resin portion 71 is formed by potting using a liquid first transparent resin containing the silicone resin fine particles 71a. Further, the second sealing resin portion 72 is formed by transfer molding using only the second transparent resin. The reason for such a configuration and manufacturing method is that the first sealing resin portion 71 containing the silicone resin fine particles 71a is formed by potting in order to avoid variations in the silicone resin fine particles 71a, which is a defect in transfer molding, and the outer surface Since the shape affects the light extraction, the second sealing resin portion 72 is formed by transfer molding capable of stably forming the outer shape, so that the first sealing formed of a material whose outer shape is unstable. This is because the resin portion 71 is sealed with the second sealing resin portion 72.

In this embodiment , the first transparent resin is, for example, a silicone resin, and the second transparent resin is, for example, an epoxy resin. The insulating substrate 1 is made of glass epoxy resin and has a thickness of about 70 μm. Further, the metal (Cu) thin films 2a and 2b formed on the back surface side are formed to a thickness of about 20 μm. Furthermore, in this embodiment , the inner diameter of the first concave hole 3a for mounting the LED chip is φ470 μm, and the inner diameter of the second concave hole 3b for connecting the metal thin wire is φ180 μm.

Thus, according to the present embodiment , when the first sealing resin portion 71 is formed, since the liquid silicone resin containing the silicone resin fine particles 71a is used, the liquid silicone resin is cured. Can be reduced. For example, if the resin that covers the surface of the LED chip 5 is formed of only a liquid silicone resin, the stress applied to the LED chip 5 during curing increases, but the resin that covers the LED chip 5 is divided into a liquid silicone resin and a solid silicone resin. By forming with the fine particles 71a, the amount of the liquid silicone resin is substantially reduced by the amount of the solid silicone resin fine particles. As a result, stress at the time of curing applied to the LED chip 5 is reduced, and defects such as cracks and cracks in the LED chip 5 can be reduced. Therefore, the LED chip 5 that is higher than the thickness of the insulating substrate 1 in the vertical sectional direction is used. be able to.

  Next, a manufacturing method of the chip component type LED 10 having the above configuration will be described with reference to FIG.

  FIG. 2 is a process explanatory view showing an example of a manufacturing method of the chip component type LED shown in FIG.

  In the first step, metal thin films 2 and 4 are formed on the front surface and the back surface of the insulating substrate 1, respectively, by attaching metal foils to the front surface and the back surface of the insulating substrate 1 (FIG. 2A).

  In the next step, the metal thin film 4 is removed from the LED chip mounting position 41 and the thin metal wire connection position 42 on the surface side of the insulating substrate 1 (FIG. 2B).

In the next step, an inclined surface that gradually expands from the back surface side to the front surface side of the insulating substrate 1 by laser processing in the region from which the metal thin film 4 has been removed (the LED chip mounting position 41 and the metal thin wire connection position 42). The first concave hole 3a and the second concave hole 3b having a depth are formed to a depth reaching the metal thin film 2 on the back surface side of the insulating substrate 1 (FIG. 2C). In this embodiment , the inner diameter of the first concave hole 3a for mounting the LED chip is φ470 μm, and the inner diameter of the second concave hole 3b for connecting the thin metal wire is φ180 μm.

  In the next step, a Cu plating layer 45 having a thickness of 20 μm is formed from the surface side of the insulating substrate 1 so as to extend on the side surface and the bottom surface of the metal thin film 2 of the first and second concave holes 3a and 3b. It is formed by plating (FIG. 2D), and a Ni / Au layer (not shown) having a thickness of 10 μm is formed on the surface of the plated layer 45 by vapor deposition in order to protect the surface such as rust and oxidation due to moisture. . Here, a portion (not shown) where the Cu plating layer 45 is unnecessary is protected by using a resist during plating, and this resist is removed after the Cu plating layer 45 and the Ni / Au layer are formed.

  In the next step, in order to form an insulating region, an unnecessary portion (indicated by reference numeral 46) of the Ni / Au layer and the Cu plating layer 45 and the metal thin film 4 on the surface of the insulating substrate 1 is removed, and the insulating substrate 1 Unnecessary portions (indicated by reference numeral 22) of the metal thin film 2 on the back surface are removed (FIG. 2 (e)). As a result, a metal thin film 4 a serving as a first wiring pattern constituted by a part of the metal thin film 4 and the plating layer 45 on the surface of the insulating substrate 1, and the metal thin film 4 and the other part constituted by the plating layer 45. A metal thin film 4b to be a two-wiring pattern is formed in an insulating state, and a metal thin film 2a facing the metal thin film 4a of the first wiring pattern and a metal thin film 4b of the second wiring pattern are opposed to the back surface of the insulating substrate 1. The metal thin film 2b is formed in an insulating state.

  In the next step, the blue LED chip 5 is mounted on the metal thin film 4a on the bottom surface of the recessed hole 3a for mounting the LED chip using a silver paste (FIG. 2 (f)).

  In the next step, the mounted LED chip 5 and the metal thin film 4b on the bottom surface of the second concave hole 3b for connecting the metal fine wire are wire-bonded using the metal fine wire 6 to be electrically connected (FIG. 2G). )).

  In the next step, the entire surface of the insulating substrate 1 including the LED chip 5 and the fine metal wires 6 is sealed with a transparent resin. Specifically, the LED chip 5 including the first recessed hole 3a and a part of the fine metal wire 6 are liquid silicone resin containing silicone resin fine particles (refractive index 1.43, average particle size 0.4 μm) 71a. The first sealing resin portion 71 is formed and sealed by potting using (refractive index 1.41) (FIG. 2 (h)), and then the insulating substrate 1 including the first sealing resin portion 71 is formed. The entire surface is sealed by forming a second sealing resin portion 72 by transfer molding using an epoxy resin (FIG. 2 (i)). Here, the curing conditions at the time of potting for forming the first sealing resin portion 71 and the curing conditions at the time of transfer molding for forming the second sealing resin portion 72 were both 150 ° C. and 1 hour.

  The reason why the first sealing resin portion 71 is formed using the liquid silicone resin containing the silicone resin fine particles 71a is to reduce the stress at the time of curing applied to the LED chip, and the second transparent resin is made of epoxy resin. It is used to stabilize the outer shape due to its hardness.

  In addition, although the Cu plating layer of the wiring pattern provided on the insulating substrate 1 is protected by the Ni / Au layer, in order to further increase the light reflectivity, at least the first and second concave holes are included in the insulating substrate. The surface side may be Ag-plated after forming a metal thin film, a Cu plating layer, or the like. In this case, it is desirable to cover the entire surface of the insulating substrate with the second sealing resin portion. In this case, when the second sealing resin portion is formed, corrosion of the Ag plating is prevented by using a resin having a high gas barrier property and a low hygroscopic property, such as an epoxy resin.

Finally, dicing is performed to obtain a blue chip component type LED 10 having a width of 1.6 mm, a thickness of 0.8 mm, and a height of 0.2 mm (see FIG. 1).
<Modification of Basic Form 1 >
Next, a modification of the basic mode 1 will be described with reference to the drawings.

FIG. 3 is a cross-sectional view showing Modification Example 1 of the chip component type LED of the basic form 1 shown in FIG.

  This chip component type LED 10 is formed on the back side of the insulating substrate 1 in which the first concave hole (through hole) 3a for mounting the LED chip and the second concave hole (through hole) 3b for connecting the metal thin wire are formed. Metal (Cu) thin films 2a and 2b which are wiring patterns corresponding to the respective recessed holes are formed in an electrically separated state. Further, on the surface side of the insulating substrate 1, a metal thin film 4a serving as a first wiring pattern is formed in a portion including the first concave hole 3a, and a metal thin film serving as a second wiring pattern in a portion including the second concave hole 3b. 4b is formed. In such a wiring structure, the LED chip 5 is mounted on the metal thin film 4a on the bottom surface portion of the first recessed hole 3a, and the LED chip 5 is formed on the bottom surface portion of the second recessed hole 3b via the metal thin wire 6. In this state, the entire surface of the insulating substrate 1 including the LED chip 5 and the thin metal wire 6 is sealed with the sealing resin portion 7.

  The chip component type LED 10 of the first modification has a structure in which the LED chip 5 including the first concave hole 3a and the entire metal thin wire 6 including the second concave hole 3b are sealed by the first sealing resin portion 71. The first sealing resin portion 71 is a liquid first transparent containing a particulate light diffusing agent (for example, silica fine particles having a refractive index of 1.45 and an average particle diameter of 0.007 μm to 0.04 μm) 71b. It differs from the chip component type LED 10 shown in FIG. 1 in that it is formed using a resin. Also in the first modification, the first sealing resin portion 71 is formed by potting, and the second sealing resin portion 72 is formed by transfer molding using only the second transparent resin.

In the first modification, the first transparent resin is, for example, a silicone resin, and the second transparent resin is, for example, an epoxy resin. The insulating substrate 1 is made of glass epoxy resin and has a thickness of about 50 μm. Further, the metal (Cu) thin films 2a and 2b formed on the back surface side are formed to a thickness of about 20 μm. Furthermore, in this embodiment , the inner diameter of the first concave hole 3a for mounting the LED chip is φ470 μm, and the inner diameter of the second concave hole 3b for connecting the metal thin wire is φ180 μm.

  Further, as the light diffusing agent 71b, an inorganic diffusing agent or an organic diffusing agent is used. For example, the inorganic diffusing agent includes calcium carbonate, silica, silicone, zinc sulfide, zinc oxide, titanium oxide, titanium phosphate, titanium. Magnesium acid, mica (mica), glass filler, barium sulfate, clay (clay), talc (talc), rubber-like elastic body formed using modified silicone resin, or polymethylsilsesoxane, organic The diffusing agent is an organic diffusing agent such as acrylic, styrene, polyester, polyolefin, urethane, nylon, methacrylate-styrene, organic fluorine or norbornene.

Thus, according to the first modification, when the first sealing resin portion 71 is formed, since the liquid silicone resin containing the light diffusing agent 71b is used, the liquid silicone resin is cured. The stress in the process can be reduced. For example, if the resin that covers the surface of the LED chip 5 is made of only a liquid silicone resin, the stress applied to the LED chip 5 during curing increases. However, the resin that covers the LED chip 5 is a liquid silicone resin and a light diffusing agent 71b. The amount of the liquid silicone resin is substantially reduced by the amount of the solid light diffusing agent. As a result, stress at the time of curing applied to the LED chip 5 is reduced, and defects such as cracks and cracks in the LED chip 5 can be reduced. Therefore, the LED chip 5 that is higher than the thickness of the insulating substrate 1 in the vertical sectional direction is used. be able to. In particular, since the light diffusing agent 71b is used, it is possible to prevent a decrease in luminous intensity at the first sealing resin portion 71.
< Basic form 2 >
Next, basic form 2 of the chip component type LED of the present invention will be described with reference to the drawings.

FIG. 4 is a cross-sectional view showing a basic form 2 of the chip component type LED of the present invention. However, in the following description, members that are the same (or have the same function) as the basic form 1 are given the same reference numerals.

  This chip component-type LED 20 includes a first concave hole (through hole) 3a for mounting an LED chip, a second concave hole (through hole) 3b for connecting a metal thin wire on both sides of the first concave hole 3a, and a first In the state where the metal (Cu) thin films 2a, 2b, 2c, which are wiring patterns corresponding to the respective recessed holes, are electrically separated on the back surface side of the insulating substrate 1 in which the three recessed portions (through holes) 3c are formed. Is formed. Further, on the surface side of the insulating substrate 1, a metal thin film 4a serving as a first wiring pattern is formed in a portion including the first concave hole 3a, and a metal thin film serving as a second wiring pattern in a portion including the second concave hole 3b. 4b is formed, and a metal thin film 4c serving as a third wiring pattern is formed in a portion including the third recessed hole 3c. In such a wiring structure, the LED chip 5 is mounted on the metal thin film 4a on the bottom surface portion of the first concave hole 3a, and the LED chip 5 is formed on the bottom surface portion of the second concave hole 3b via the metal thin wire 6a. In addition to being electrically connected to the metal thin film 4b, it is also electrically connected to the metal thin film 4c on the bottom surface portion of the third recessed hole 3c via the metal thin wire 6b. In this state, the LED chip 5 and the metal thin wires 6a, 6b The entire surface of the insulating substrate 1 including is sealed with the sealing resin portion 7.

Here, in this embodiment , the sealing resin portion 7 includes the LED chip 5 including the first concave hole 3a, the metal thin wire 6a including the second concave hole 3b, and the metal thin wire 6b including the third concave hole portion 3c. The first sealing resin portion 71 that seals the whole and the second sealing resin portion 72 that seals the entire surface of the insulating substrate 1 including the first sealing resin portion 71 are configured. In the present embodiment , the first sealing resin portion 71 is formed using a liquid silicone resin containing a silane coupling agent 71c, and the second sealing resin portion 72 is formed using an epoxy resin. Is formed. The insulating substrate 1 is made of glass epoxy resin and has a thickness of about 60 μm. Further, the metal (Cu) thin films 2a and 2b formed on the back surface side are formed to a thickness of about 25 μm. Furthermore, in the second embodiment, the inner diameter of the first concave hole 3a for mounting the LED chip is φ500 μm, and the inner diameters of the second concave hole 3b and the third concave hole 3c for connecting the thin metal wire are each φ200 μm.

Thus, according to this embodiment , when the first sealing resin portion 71 is formed, since the liquid silicone resin containing the silane coupling agent 71c is used, the liquid silicone resin is cured. The stress at can be reduced. For example, if the resin that covers the surface of the LED chip 5 is formed of only a liquid silicone resin, the stress applied to the LED chip 5 during curing increases. However, the resin that covers the LED chip 5 is divided into a liquid silicone resin and a solid silane cup. By forming with the ring agent 71c, the amount of the liquid silicone resin is substantially reduced by the content of the solid silane coupling agent 71c. As a result, stress at the time of curing applied to the LED chip 5 is reduced, and defects such as cracks and cracks in the LED chip 5 can be reduced. Therefore, the LED chip 5 that is higher than the thickness of the insulating substrate 1 in the vertical sectional direction is used. be able to. Furthermore, the adhesion between the first sealing resin portion 71 and the metal thin films 4a, 4b, 4c is also improved.

  Next, a manufacturing method of the chip component type LED 20 having the above configuration will be described with reference to FIG.

  FIG. 5 is a process explanatory view showing an example of a manufacturing method of the chip component type LED shown in FIG.

  In the first step, the metal thin films 2 and 4 are respectively formed on the front and back surfaces of the insulating substrate 1 by pasting metal foils on the front and back surfaces of the insulating substrate 1 (FIG. 5A).

  In the next step, the metal thin film 4 at the LED chip mounting position 41 and the thin metal wire connecting positions 42 and 43 on the surface side of the insulating substrate 1 is removed (FIG. 5B).

  In the next step, the first concave hole 3a, the second concave hole 3b, and the third concave having an inclined surface by laser processing in the region from which the metal thin film 4 is removed (the LED chip mounting position 41 and the thin metal wire connecting positions 42 and 43). The hole 3c is formed to a depth that reaches the metal thin film 2 on the back surface side of the insulating substrate 1 (FIG. 5C). In the second embodiment, the inner diameter of the first concave hole 3a for mounting the LED chip is φ500 μm, and the inner diameters of the second concave hole 3b and the third concave hole 3c for connecting the thin metal wire are each φ200 μm.

  In the next step, a thickness of 15 μm is formed from the surface side of the insulating substrate 1 so as to extend on the side and bottom metal thin film 2 of the first and second concave holes 3a, 3b and 3c. A Cu plating layer 45 is formed by plating (FIG. 2D), and a 10 μm thick Ni / Au layer (not shown) is provided on the surface of the plating layer 45 to protect the surface such as rust and oxidation due to moisture. ) Is formed by vapor deposition. Here, a portion (not shown) where the Cu plating layer 45 is unnecessary is protected by using a resist during plating, and this resist is removed after the Cu plating layer 45 and the Ni / Au layer are formed.

  In the next step, in order to form an insulating region, unnecessary portions (indicated by reference numerals 46 and 47) of the Ni / Au layer and the Cu plating layer 45 and the metal thin film 4 on the surface of the insulating substrate 1 are removed and the insulating substrate 1 is insulated. Unnecessary portions (indicated by reference numerals 22 and 23) of the metal thin film 2 on the back surface of the substrate 1 are removed (FIG. 5E). As a result, the metal thin film 4a serving as the first wiring pattern, the metal thin film 4b serving as the second wiring pattern, and the metal thin film 4c serving as the third wiring pattern are formed in an insulating state on the surface of the insulating substrate 1 and insulated. On the back surface of the substrate 1, a metal thin film 2a facing the metal thin film 4a of the first wiring pattern, a metal thin film 2b facing the metal thin film 4b of the second wiring pattern, and a metal facing the metal thin film 4c of the third wiring pattern The thin film 2c is formed in an insulating state.

  In the next step, the red LED chip 5 is mounted on the metal thin film 4a on the bottom surface of the recessed hole 3a for mounting the LED chip using a silicone resin (FIG. 5 (f)).

  In the next step, the mounted LED chip 5 and the metal thin film 4b on the bottom surface of the second concave hole 3b for connecting the metal thin wire are electrically connected by wire bonding using the metal thin wire 6a. And the metal thin film 4c on the bottom surface of the third concave hole 3c for connecting the fine metal wires are electrically connected by wire bonding using the fine metal wires 6b (FIG. 5G).

  In the next step, the entire surface of the insulating substrate 1 including the LED chip 5 and the thin metal wires 6a and 6b is sealed with a transparent resin (FIG. 5 (h)). Specifically, the liquid crystal silicone containing the silane coupling agent 71c is formed on the whole of the LED chip 5 including the first concave hole 3a and the metal thin wires 6a and 6b including the second concave hole 3b and the third concave hole 3c. The first sealing resin portion 71 is formed and sealed by potting using a resin, and then the entire surface of the insulating substrate 1 including the first sealing resin portion 71 is formed using an epoxy resin. The second sealing resin portion 72 is sealed by transfer molding. Here, the curing condition at the time of potting for forming the first sealing resin part 71 is 150 ° C. for 3 hours, and the curing condition at the time of transfer molding for forming the second sealing resin part 72 is 120 ° C. for 1 hour. .

Finally, dicing is performed to obtain a red chip component LED 20 having a width of 1.5 mm, a thickness of 0.8 mm, and a height of 0.18 mm (see FIG. 5).
< Embodiment 1 >
6 is a cross-sectional view showing a first embodiment of a chip component-type LED of the present invention, and FIG. 7 is a plan view of the chip component-type LED shown in FIG. However, in the following description, members that are the same (or have the same function) as the basic form 1 are given the same reference numerals.

  This chip component type LED 30 is formed on the back side of the insulating substrate 1 in which the first concave hole (through hole) 3a for mounting the LED chip and the second concave hole (through hole) 3b for connecting the metal thin wire are formed. Metal (Cu) thin films 2a and 2b which are wiring patterns corresponding to the respective recessed holes are formed in an electrically separated state. Further, on the surface side of the insulating substrate 1, a metal thin film 4a serving as a first wiring pattern is formed in a portion including the first concave hole 3a, and a metal thin film serving as a second wiring pattern in a portion including the second concave hole 3b. 4b is formed. These metal thin films 4a and 4b are insulated by forming a notch 48 having a constant width from which the metal thin film 4 is removed at the center of the surface of the partition wall 1a that partitions the first concave hole 3a and the second concave hole 3b. Has been. Further, on the surface of the partition wall portion 1a, the groove portion 11 having a predetermined depth is formed in a direction orthogonal to the notch portion 48, that is, straddling the first groove 3a and the second groove 3b. Is formed.

  In such a wiring structure, the LED chip 5 is mounted on the metal thin film 4a on the bottom surface portion of the first recessed hole 3a, and the LED chip 5 is formed on the bottom surface portion of the second recessed hole 3b via the metal thin wire 6. It is electrically connected to the metal thin film 4b. At this time, the fine metal wire 6 is wired through the inside of the recessed groove portion 11 of the partition wall portion 1a, and the vicinity of the central portion thereof is wire-bonded to the bottom surface of the recessed groove portion 11. That is, the portion of the fine metal wire 6 connected to the LED chip 5 and the portion excluding the vicinity thereof are wired so as not to protrude above the surface of the insulating substrate 1. In this state, the entire surface of the insulating substrate 1 including the LED chip 5 and the fine metal wires 6 is sealed with the sealing resin portion 7.

Here, in this embodiment , the sealing resin portion 7 includes a first sealing resin portion 71 that seals the entire LED chip 5 including the first concave hole 3a and the thin metal wire 6 including the second concave hole 3b. The second sealing resin portion 72 seals the entire surface of the insulating substrate 1 including the first sealing resin portion 71. In this embodiment , the first sealing resin portion 71 is formed by potting using a liquid silicone resin containing the silicone resin fine particles 71a. The second sealing resin portion 72 is formed by transfer molding using only an epoxy resin.

In this embodiment , the insulating substrate 1 is made of glass epoxy resin and has a thickness of about 55 μm. Moreover, the metal (Cu) thin films 2a and 2b formed on the back surface side are formed to a thickness of about 18 μm. In this embodiment , the inner diameter of the first concave hole 3a for mounting the LED chip is φ400 μm, and the inner diameter of the second concave hole 3b for connecting the metal thin wire is φ150 μm. Furthermore, the depth of the groove 11 was set to 25 μm.

As described above, according to this embodiment , the fine metal wire 6 is wire-bonded to the bottom surface of the concave groove portion 11 formed between the first concave hole 3a for mounting the LED chip and the second concave hole 3b for connecting the metal fine wire. Therefore, the portion of the fine metal wire 6 connected to the LED chip 5 and the portion excluding the vicinity thereof can be arranged at a lower position, and the chip component type further reduced in thickness (for example, about 0.15 mm) The LED 30 can be obtained. In addition, since the liquid silicone resin containing the silicone resin fine particles 71a is used when forming the first sealing resin portion 71, it is possible to reduce stress in the process of curing the liquid silicone resin. . For example, if the resin that covers the surface of the LED chip 5 is formed of only a liquid silicone resin, the stress applied to the LED chip 5 during curing increases, but the resin that covers the LED chip 5 is divided into a liquid silicone resin and a solid silicone resin. By forming with the fine particles 71a, the amount of the liquid silicone resin is substantially reduced by the content of the solid silicone resin fine particles 71a. As a result, the curing stress applied to the LED chip 5 is reduced, and defects such as cracks and cracks in the LED chip 5 can be reduced. Further, since the concave groove portion 11 to which the fine metal wire 6 is wire-bonded is covered with the liquid silicone resin containing the silicone resin fine particles 71a, stress on the fine metal wire 6 and the concave groove portion 11 can be reduced. It can prevent that the thin wire | line 6 peels.

  Next, a manufacturing method of the chip component type LED 30 having the above configuration will be described with reference to FIG.

  FIG. 8 is a process explanatory view showing an example of a manufacturing method of the chip component type LED shown in FIG.

  In the first step, the metal thin films 2 and 4 are respectively formed on the front and back surfaces of the insulating substrate 1 by pasting metal foils on the front and back surfaces of the insulating substrate 1 (FIG. 8A).

  In the next step, the metal thin film 4 is removed from the LED chip mounting position 41 on the surface side of the insulating substrate 1, the metal thin wire connection position 42, and the position (not shown) to be the groove 11 (FIG. 8B). ).

In the next step, the first recessed hole 3a and the second recessed hole 3b having inclined surfaces by laser processing in the LED chip mounting position 41 and the metal thin wire connecting position 42 in the region where the metal thin film 4 has been removed are formed on the insulating substrate 1. It is formed to a depth reaching the metal thin film 2 on the back side. At this time, the surface is set in advance so as to straddle the space between the first concave hole 3a and the second concave hole 3b on the surface of the partition wall portion 1a that partitions the first concave hole 3a and the second concave hole 3b to be formed. The groove 11 having the depth is formed by the same laser processing (FIG. 8C). In this embodiment , the inner diameter of the first concave hole 3a for mounting the LED chip is φ500 μm, the inner diameter of the second concave hole 3b for connecting the metal thin wire is φ200 μm, and the depth of the concave groove portion 11 is 25 μm.

  In the next step, a 25 μm thick Cu plating layer 45 is formed from the surface side of the insulating substrate 1 so as to extend on the side surfaces and the bottom surface of the metal thin film 2 of the first and second concave holes 3a and 3b. It is formed by plating (FIG. 8D), and a Ni / Au layer (not shown) having a thickness of 10 μm is formed on the surface of the plating layer 45 by vapor deposition in order to protect the surface such as rust and oxidation due to moisture. . Here, a portion (not shown) where the Cu plating layer 45 is unnecessary is protected by using a resist during plating, and this resist is removed after the Cu plating layer 45 and the Ni / Au layer are formed.

In the next step, in order to form an insulating region, unnecessary portions of the Ni / Au layer and the Cu plating layer 45 and the metal thin film 4 on the surface of the insulating substrate 1 are removed (indicated by reference numeral 46), and the insulating substrate 1 Unnecessary portions of the metal thin film 2 on the back surface are removed (indicated by reference numeral 22) (FIG. 8E).
Thereby, the metal thin film 4a to be the first wiring pattern and the metal thin film 4b to be the second wiring pattern are formed in an insulating state on the surface of the insulating substrate 1, and the first wiring pattern of the first wiring pattern is formed on the back surface of the insulating substrate 1. The metal thin film 2a facing the metal thin film 4a and the metal thin film 2b facing the metal thin film 4b of the second wiring pattern are formed in an insulating state. In this embodiment , in this step, the Ni / Au layer and the Cu plating layer 45 on the surface of the concave groove 11 for wiring the fine metal wires 6 are also removed. That is, the surface of the groove 11 is in a state where the insulating substrate 1 is exposed.

  In the next step, the LED chip 5 is mounted on the metal thin film 4a on the bottom surface of the recessed hole 3a for mounting the LED chip using an epoxy resin (FIG. 8 (f)).

  In the next step, the mounted LED chip 5 and the bonding portion 61a of the concave groove portion 11 are wire-bonded using the fine metal wire 6, and further the second concave hole for connecting the bonding portion 61a of the concave groove portion 11 and the fine metal wire. The metal thin film 4b on the bottom surface of 3b is wire-bonded using the fine metal wire 6, and the LED chip 5 and the metal thin film 4b are electrically connected (FIG. 8G).

  In the next step, the entire surface of the insulating substrate 1 including the LED chip 5 and the fine metal wires 6 is sealed with a transparent resin (FIG. 8H). More specifically, the bonding portion including the LED chip 5 including the first concave hole 3a, the fine metal wire 6 including the second concave hole 3b, and the concave groove portion 11 communicating with the first concave hole 3a and the second concave hole 3b. 61a is sealed by forming a first sealing resin portion 71 by potting using a liquid silicone resin containing silicone resin fine particles 71a, and then sealing the first sealing resin portion 71. The entire surface of the insulating substrate 1 is sealed by forming a second sealing resin portion 72 by transfer molding using an epoxy resin. Here, the curing condition at the time of potting for forming the first sealing resin part 71 is 150 ° C. for 1 hour, and the curing condition at the time of transfer molding for forming the second sealing resin part 72 is 150 ° C. for 3 hours. .

Finally, dicing is performed to obtain a high-color-rendering chip component LED 30 having a width of 1.65 mm, a thickness of 0.75 mm, and a height of 0.15 mm (see FIG. 6).
< Reference form 1 >
Will be described with reference to the drawings reference embodiment 1 Ji-up component type LED.

Figure 9 is a sectional view showing a reference embodiment 1 Ji-up component type LED. However, in the following description, members that are the same (or have the same function) as the basic form 1 are given the same reference numerals.

  This chip component type LED 40 is provided on the back side of the insulating substrate 1 in which the first concave hole (through hole) 3a for mounting the LED chip and the second concave hole (through hole) 3b for connecting the metal thin wire are formed. Metal (Cu) thin films 2a and 2b which are wiring patterns corresponding to the respective recessed holes are formed in an electrically separated state. Further, on the surface side of the insulating substrate 1, a metal thin film 4a serving as a first wiring pattern is formed in a portion including the first concave hole 3a, and a metal thin film serving as a second wiring pattern in a portion including the second concave hole 3b. 4b is formed. In such a wiring structure, the LED chip 5 is mounted on the metal thin film 4a on the bottom surface portion of the first recessed hole 3a, and the LED chip 5 is formed on the bottom surface portion of the second recessed hole 3b via the metal thin wire 6. In this state, the entire surface of the insulating substrate 1 including the LED chip 5 and the thin metal wire 6 is sealed with the sealing resin portion 7.

Here, in this embodiment , the sealing resin portion 7 includes the first sealing resin portion 71 that seals a part of the LED chip 5 and the metal thin wire 6 including the first recessed hole 3a, and the first sealing resin. The second sealing resin portion 72 seals the entire surface of the insulating substrate 1 including the portion 71. Further, the first sealing resin portion 71 includes a lower sealing resin portion 71d1 filled in the entire first recessed hole 3a and an upper sealing resin portion 71d2 disposed on the lower sealing resin portion 71d1. Has been.

  The lower sealing resin portion 71d1 and the upper sealing resin portion 71d2 are formed using the same material (for example, a liquid silicone resin), and the second sealing resin portion 72 is formed using an epoxy resin, for example. Has been. Further, the lower sealing resin portion 71d1 and the upper sealing resin portion 71d2 have similar shapes. For example, the lower sealing resin portion 71d1 has a shape that matches the shape of the first concave hole 3a. The resin part 71d2 has a shape in which the lower sealing resin part 71d1 is turned upside down.

  The lower sealing resin portion 71d1 and the upper sealing resin portion 71d2 are formed, for example, by performing transfer molding using a mold having a concave portion formed on the bottom surface of the lower sealing resin portion 71d1 upside down. It has been done. That is, at the time of transfer molding, the mold recess and the mold are pressed with the mold pressed against the insulating substrate 1 from above while matching the opening of the recess of the mold with the opening of the first recess 3a. The lower sealing resin portion 71d1 and the upper sealing resin portion 71d2 are integrally formed by injecting a transparent resin into the first concave hole 3a and curing it.

Thus, according to the present embodiment , the first sealing resin portion 71 is cured because the first sealing resin portion 71 is configured by the lower sealing resin portion 71d1 and the upper sealing resin portion 71d2 having similar shapes. The stress on the LED chip 5 during the process can be reduced. For example, when the first sealing resin portion 71 is composed of only the lower sealing resin portion 71d1, the upper portion of the LED chip 5 is exposed from the first sealing resin portion 71 and the first sealing resin portion 71 is 2 Since the resin amount of the sealing resin portion 72 is large, the stress on the upper part of the LED chip 5 in the process of curing the second sealing resin portion 72 is increased, so that the LED chip 5 is broken. Will occur. For this reason, the first sealing resin portion 71 is composed of a lower sealing resin portion 71d1 and an upper sealing resin portion 71d2 formed using the same amount of the same material, and the lower sealing resin portion 71d1 and the upper sealing resin portion 71d1. By covering the entire LED chip 5 with the resin portion 71d2, the stress applied to the entire LED chip can be equally reduced, so that defects such as cracks and cracks in the LED chip 5 can be reduced.

The chip component type LED of this embodiment is the same as the basic embodiment 1 except that the first sealing resin portion 71 is composed of a lower sealing resin portion 71d1 and an upper sealing resin portion 71d2 having similar shapes. The detailed description of the configuration other than the first sealing resin portion 71 is omitted. Also for the manufacturing method of the chip component type LED of this embodiment , the basic described above with reference to FIG. 2 except that the lower sealing resin portion 71d1 and the upper sealing resin portion 71d2 are formed by transfer molding. Since it is the same procedure as the manufacturing method of the chip component type LED of the form 1 , detailed description is omitted.

In the basic forms 1 and 2, the first embodiment, and the reference form 1 described above, one chip component type LED is configured by only one LED chip, but the present invention is limited to this configuration. Instead, one chip component type LED may be composed of a plurality of LED chips. In this case, a wiring pattern and a recessed hole are formed for each LED chip so that the plurality of LED chips can be individually operated. In such a configuration, a multi-color chip component type LED can be obtained by making the emission colors (for example, blue, red, yellow or green) of each LED chip different.

Further, in the chip component type LED of the basic forms 1 and 2 and the first embodiment, the emission color of the LED chip can be changed according to the design. In the chip component type LED of the first reference embodiment , the design is designed. It is assumed that the emission color of the LED chip can be selected according to the above.

  The chip component type LED of the present invention can be utilized when forming a chip component type LED using an LED chip higher than the thickness of the transparent substrate.

It is sectional drawing which shows the basic form 1 of chip component type LED of this invention. It is process explanatory drawing which shows an example of the manufacturing method of chip component type LED shown in FIG. It is sectional drawing which shows the modification 1 of chip component type LED of the basic form 1 shown in FIG. It is sectional drawing which shows the basic form 2 of chip component type | mold LED of this invention. It is process explanatory drawing which shows an example of the manufacturing method of chip component type LED shown in FIG. It is sectional drawing which shows Embodiment 1 of chip component type LED of this invention. It is a top view of chip component type LED shown in FIG. It is process explanatory drawing which shows an example of the manufacturing method of chip component type LED shown in FIG. It is a sectional view showing a reference embodiment 1 Ji-up component type LED. It is explanatory drawing which shows an example of the conventional chip component type LED. It is explanatory drawing which shows the other example of the conventional chip component type LED.

Explanation of symbols

2a Metal thin film (first wiring pattern)
2b Metal thin film (second wiring pattern)
2c Metal thin film (third wiring pattern)
3a 1st recessed hole 3b 2nd recessed hole 3c 3rd recessed hole 4a, 4b Metal thin film 5 LED chip 6, 6a, 6b Metal fine wire 7 Sealing resin part 71 1st sealing resin part 71d1 Lower sealing resin part 71d2 Upper part Sealing resin part 72 Second sealing resin part 10, 20, 30, 40 Chip component type LED
DESCRIPTION OF SYMBOLS 11 Groove part 41 LED chip mounting position 42,43 Metal fine wire connection position 45 Plating layer 71 1st sealing resin part 72 2nd sealing resin part

Claims (9)

A thin metal plate serving as a first wiring pattern is formed on a portion including the first concave hole of the insulating substrate in which the first concave hole for mounting the LED chip and the second concave hole for connecting the thin metal wire are formed, and the first 2 metal sheet serving as the second interconnection pattern is formed concave hole in a portion containing, LED chip is mounted on the metal sheet in the first recess hole, said LED chip within said second recess hole through the thin metal wire Electrically connected to the metal sheet ,
Said LED chip and at least a portion of the thin metal wires including a first recess hole, the first sealing resin portion formed with a first transparent resin containing silicone resin fine particles, the light diffusing agent or a silane coupling agent Sealed with
The surface of the insulating substrate including the first sealing resin portion is sealed with a second sealing resin portion formed using a second transparent resin,
Wherein the first seal resin portion and the second seal resin portion are formed of different materials,
A groove portion is formed in the partition wall portion that partitions the first groove hole and the second groove hole of the insulating substrate so as to straddle the first groove hole and the second groove hole. A chip component type LED , wherein a substantially central portion of the metal thin wire is wire-bonded to a bottom surface . The chip component type LED according to claim 1,
The chip component type LED in which the first transparent resin is a liquid silicone resin and the second transparent resin is a liquid epoxy resin. The chip component type LED according to claim 1,
The first sealing resin portion is a chip component type LED that seals the LED chip including the first concave hole and the whole of the fine metal wire including the second concave hole. The chip component type LED according to claim 1,
A chip component type LED in which the vertical cross-sectional dimension of the LED chip is larger than the vertical cross-sectional dimension of the insulating substrate. The chip component type LED according to claim 1,
The light diffusing agent is used calcium carbonate, silica, silicones, zinc sulfide, zinc oxide, titanium oxide, titanium phosphate, magnesium titanate, mica, glass filler, barium sulfate, clay (clay), talc, modified silicone resin A chip-part type LED which is a rubber-like elastic body formed by using an inorganic diffusing agent of polymethylsilsesoxane. The chip component type LED according to claim 1,
The chip component type LED, wherein the light diffusing agent is an acrylic, styrene, polyester, polyolefin, urethane, nylon, methacrylate-styrene, organic fluorine or norbornene organic diffusing agent. In the chip-type LED according to any one of claims 1 to 4,
The chip component type LED in which the bottom surface of the first concave hole and the bottom surface of the second concave hole have the same height or substantially the same height. In the chip-type LED according to any one of claims 1 to 4,
The second recessed hole is a chip component type LED in which a plurality are formed. In the chip-type LED according to any one of claims 1 to 4,
The chip part type LED in which the inner peripheral surfaces of the first concave hole and the second concave hole are formed on inclined surfaces that gradually expand from the back surface side to the front surface side of the insulating substrate.

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