201218412 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種發光二極體封裝結構之形成方法。 【先前技術】 [0002] 傳統之發光二極體封裝結構之切割方法一般採用鐳射切 割，但是為了降低切割成本以及簡化制程，目前在發光 二極體制程上大多採用裂片（breaking)方式。具體方 法為：在用於形成多個封裝結構之封裝基板上預切割多 條切割線，在完成封裝制程後，沿著所述切割線將多個 發光二極體封裝結構分別剝離下來，得到多個分離之發 光二極體封裝結構。但是為了保持封裝基板整體結構， 防止在預切割或後續封裝制程時封裝基板出現斷裂，切 割線不能切之太深，這就導致了在剝離發光二極體封裝 結構之過程中，由於應力無法很好地進行傳遞至切割線 處，容易造成剝離後之發光二極體封裝結構邊緣不規則 ，從而影響到發光二極體封裝結構之良率。 【發明内容】 [0003] 有鑒於此，有必要提供一種剝離後之發光二極體封裝結 構邊緣規則，良率較高之發光二極體封裝結構之形成方 法。 [0004] 一種發光二極體封裝結構之形成方法，其包括以下幾個 步驟： [0005] 提供一發光二極體封裝基板，其相對之上表面和下表面 分別形成多條相交之切割線，所述切割線將所述發光二 極體封裝基板均勻分割成多個單片； 099136015 表單編號A0101 第4頁/共16頁 0992062942-0 201218412 [0006] [0007] [0008] [0009] [0010] ❹ [0011] [0012] 〇 [0013] [0014] [0015] 099136015 0992062942-0 在所述切割線之父點處開設貫通所述發光二極體封裝基 板上表面及下表面之通孔； 在所述通孔内壁罪近所述發光__•極體封裝基板之上表面 及下表面之上下兩端沿所述切割線分別開設切口； 將多個發光二極體晶粒分別設置在所述每個單片上. 利用一遮蓋板遮蓋在所述發光二極體封裝基板上，所述 遮蓋板對應所述每個單片開設有開孔； 藉由所述遮蓋板之開孔在所述每個單片上形成封裝層； 沿著所述切割線分別剝離下每個單月’從而形成多個發 光二極體封裝結構。 相較於現有技術’本發明之發光二極體封裝結構之形成 法中，發光二極體封裝基板在上下表面分別預切割有 刀。’丨線，並且在上下表面上沿所述切割線分別開設切口 從而在剝離過程中，有寿i於應先c傳遞，剝離更容易 亲】離後之發光二極體封裝結構之邊编更規則，良率比 較高。 【實施方式】 以下將結合關對本發明作進_步之詳細說明。 =發明實施方式提供之發光二極體封震結構之形成方法 包括以下幾個步驟： ，請參_丨至圖3，提供一發光二_封裝基板 ，其包括相對之上表面ll0以及下表面12〇，在所述 上表面11〇以；5-^± u以及下表面120分別對應預切割形成多條相交 表單編衆A_ 第5頁/共16頁 201218412 之橫向及縱向之切割線130，所述切割線130將所述發光 二極體封裝基板100均勻分割成多個單片140。為保持所 述發光二極體封裝基板100之整體結構，防止其斷裂，所 述切割線130之深度不宜太深，其具體深度應視基板材質 而定。在所述發光二極體封裝基板100之上表面110上， 所述每個單片140都開設有凹槽141，所述凹槽141中設 置有上電極142。在所述發光二極體封裝基板100之下表 面120上設置有與所述上電極142相對應之下電極143， 所述上電極142與所述下電極143彼此電性連接。在本實 施方式中，所述發光二極體封裝基板100為一陶瓷基板。 [0016] 步驟二，在所述橫向及縱向之切割線130之交點處開設貫 通所述發光二極體封裝基板100上表面110以及下表面 120之通孔150。 [0017] 步驟三，在所述通孔150内壁靠近所述發光二極體封裝基 板100之上表面110以及下表面120之上下兩端沿所述切 割線13 0分別開設一切口 16 0。所述切口 16 0與所述切割 線130連通，並且比所述切割線130之深度要深。在本實 施方式中，所述切口 160在垂直所述發光二極體封裝基板 100之方向上呈“V”字型。 [0018] 步驟四，請參閱圖4，將多個發光二極體晶粒200分別設 置在所述每個單片140之凹槽141中，並且電性連接其中 之上電極142。 [0019] 步驟五，請參閱圖5，利用一遮蓋板300遮蓋在所述發光 二極體封裝基板100上，所述遮蓋板300對應所述每個單 099136015 表單編號A0101 第6頁/共16頁 0992062942-0 201218412 [0020] Ο [0021] [0022] Ο 片140之凹槽141開設有開孔310。 步驟六，藉由所述遮蓋板3〇〇之開孔310向每個單片140 之凹槽141中注入封裝膠體，形成封裝層400，覆蓋所述 發光二極體晶粒2 0 0。在本實施方式中，利用一注膠頭 5〇〇藉由所述遮蓋板300之開孔310向每個單片14〇之凹槽 141中注入封裝膠體◊所述封裝膠體可以為環氧樹脂、矽 樹脂或者是兩者組合材料構成。所述封裝膠體中還可包 括有螢光粉，所述螢光粉可以為石榴石結構化合物、矽 酸鹽、氮化物、氮氧化物、磷化物、碟化物或前述材料 之組合。 步驟七’沿著所述切割線13〇分別剝離下每個單片140， 從而形成多個發光二極體封裝結構？ 在剝離過程中’當對所述發光二極體封裝基板100之上表 面110施以下壓力時，上表面110之切口 160處就會產生 張應力’該應力將會向下延伸尋找所述發洗二極體封裝 基板100之相對脆弱之區域，從Mfc會延伸至所述下表面 120之相對較深之切口 160處，進4½發光二極體封裝結 構從所述發光二極體封裝基板100上剝離下來。由於在所 述發光二極體封裝基板100之上表面110以及下表面分別 開設相對於切割線130較深之切口 160，從而更有利於應 力之傳遞’剝離更容易，剝離後之發光二極體封裝結構 之邊緣更規則’良率比較高。另外，由於在對發光二極 體進行注膠形成封裝層之過程中，利用遮蓋板300遮蓋住 所述切割線130以及切口 16〇，從而液態之封裝材料不會 流入到切割線1 3 0以及切口 16 〇中，因而不會對切割線 099136015 表單煸號A0101 第7頁/共16頁 0992062942-0 201218412 130以及切口 160處之應力傳遞產生影響。 [0023] 相較於現有技術，本發明之發光二極體封裝結構之形成 方法中，發光二極體封裝基板在上下表面分別預切割有 切割線，並且在上下表面上沿所述切割線分別開設切口 ，從而在剝離過程中，有利於應力之傳遞，剝離更容易 ，剝離後之發光二極體封裝結構之邊緣更規則，良率比 較高。 [0024] 另外，本領域技術人員還可在本發明精神内做其他變化 ，當然，這些依據本發明精神所做之變化，都應包含在 本發明所要求保護之範圍之内。 【圖式簡單說明】 [0025] 圖1為本發明實施方式中之發光二極體封裝基板之俯視圖 〇 [0026] 圖2為本發明實施方式中之發光二極體封裝基板之仰視圖 〇 [0027] 圖3為圖1中之發光二極體封裝基板沿11 I-Ι 11之剖面示 意圖。 [0028] 圖4為將圖1中之發光二極體封裝基板設置發光二極體晶 粒之俯視圖。 [0029] 圖5為利用一遮蓋板遮蓋發光二極體封裝基板並注入封裝 膠體之示意圖。 【主要元件符號說明】 [0030] 發光二極體封裝基板：100 099136015 表單編號A0101 第8頁/共16頁 0992062942-0 201218412 [0031] [0032] [0033] [0034] [0035] [0036] [0037]201218412 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a method of forming a light emitting diode package structure. [Prior Art] [0002] The conventional method of cutting a light-emitting diode package generally uses laser cutting, but in order to reduce the cutting cost and simplify the process, a splitting method is often used in the light-emitting diode process. The specific method is: pre-cutting a plurality of cutting lines on a package substrate for forming a plurality of package structures, and after completing the packaging process, separating the plurality of light emitting diode package structures along the cutting lines respectively, thereby obtaining a plurality of A separate light-emitting diode package structure. However, in order to maintain the overall structure of the package substrate, the package substrate is prevented from being broken during the pre-cutting or subsequent packaging process, and the cutting line cannot be cut too deeply, which results in the stress cannot be very high during the process of stripping the LED package structure. Good transfer to the cutting line is likely to cause irregularities in the edge of the light-emitting diode package structure after peeling, thereby affecting the yield of the light-emitting diode package structure. SUMMARY OF THE INVENTION [0003] In view of the above, it is necessary to provide a method for forming a light-emitting diode package structure in which the edge of the light-emitting diode package structure is peeled off and the yield is high. [0004] A method for forming a light emitting diode package structure includes the following steps: [0005] Providing a light emitting diode package substrate, wherein a plurality of intersecting cutting lines are formed on an upper surface and a lower surface, respectively. The cutting line divides the light emitting diode package substrate into a plurality of single pieces uniformly; 099136015 Form No. A0101 Page 4 / Total 16 Page 0992062942-0 201218412 [0006] [0007] [0008] [0009] [0010 [0012] [0012] [0014] [0015] [0015] 099136015 0992062942-0 a through hole of the upper surface and the lower surface of the light emitting diode package substrate is opened at a parent point of the cutting line; In the inner wall of the through hole, a slit is formed along the cutting line near the upper surface and the lower surface of the upper surface of the lower surface of the light-emitting package substrate; and a plurality of light-emitting diode crystal grains are respectively disposed at the same Covering each of the single-chips. Covering the light-emitting diode package substrate with a cover plate, the cover plate is provided with an opening corresponding to each of the single-piece sheets; Forming an encapsulation layer on each of the individual sheets; along the cutting line Each of the single months is peeled off to form a plurality of light-emitting diode packages. In the method of forming a light-emitting diode package structure according to the prior art, the light-emitting diode package substrate is pre-cut with a knife on the upper and lower surfaces, respectively. '丨线, and the slits are respectively formed along the cutting line on the upper and lower surfaces, so that in the peeling process, the life is first transferred to the first c, and the peeling is easier to pro- ing the side of the light-emitting diode package structure. Rules, the yield is relatively high. [Embodiment] Hereinafter, a detailed description will be given of the present invention in conjunction with the present invention. The method for forming the light-emitting diode sealing structure provided by the embodiment includes the following steps: Referring to FIG. 3, a light-emitting package substrate is provided, which includes an upper surface 1110 and a lower surface 12 〇, in the upper surface 11〇; 5--± u and the lower surface 120 respectively corresponding to the pre-cut forming a plurality of intersecting form editors A_ page 5 / a total of 16 pages 201218412 horizontal and vertical cutting line 130, The dicing line 130 divides the LED package substrate 100 into a plurality of individual pieces 140. In order to maintain the overall structure of the LED package substrate 100 and prevent it from breaking, the depth of the cutting line 130 should not be too deep, and the specific depth should be determined depending on the material of the substrate. On the upper surface 110 of the LED package substrate 100, each of the single sheets 140 is provided with a recess 141, and the upper electrode 142 is disposed in the recess 141. An electrode 143 corresponding to the upper electrode 142 is disposed on the lower surface 120 of the LED package substrate 100, and the upper electrode 142 and the lower electrode 143 are electrically connected to each other. In the embodiment, the LED package substrate 100 is a ceramic substrate. [0016] Step 2, a through hole 150 penetrating the upper surface 110 and the lower surface 120 of the LED package substrate 100 is disposed at an intersection of the horizontal and vertical cutting lines 130. In the third step, the inner wall of the through hole 150 is adjacent to the upper surface 110 of the LED package substrate 100 and the upper and lower ends of the lower surface 120, and each of the openings 16 is opened along the cutting line 130. The slit 16 0 is in communication with the cutting line 130 and is deeper than the depth of the cutting line 130. In the embodiment, the slit 160 has a "V" shape in a direction perpendicular to the LED package substrate 100. [0018] Step 4, referring to FIG. 4, a plurality of light emitting diode dies 200 are respectively disposed in the grooves 141 of each of the single sheets 140, and electrically connected to the upper electrodes 142 therein. [0019] Step 5, referring to FIG. 5, a cover plate 300 is used to cover the LED package substrate 100. The cover plate 300 corresponds to each of the single 099136015 Form No. A0101 Page 6 of 16 Page 0992062942-0 201218412 [0020] [0022] The groove 141 of the cymbal sheet 140 is provided with an opening 310. In step six, the encapsulation layer is injected into the recess 141 of each of the individual sheets 140 by the opening 310 of the cover plate 3 to form an encapsulation layer 400 covering the LED die 200. In the present embodiment, an encapsulant is injected into the recess 141 of each of the individual sheets 14 by using the opening 310 of the cover 300. The encapsulant may be epoxy. , enamel resin or a combination of the two materials. The encapsulant may further comprise a phosphor powder, which may be a garnet structure compound, a niobate, a nitride, an oxynitride, a phosphide, a dish or a combination of the foregoing. Step 7' separates each of the individual sheets 140 along the cutting line 13 , to form a plurality of light emitting diode package structures. During the stripping process, when the following pressure is applied to the upper surface 110 of the LED package substrate 100, a tensile stress is generated at the slit 160 of the upper surface 110. The stress will extend downward to find the hair wash. A relatively fragile region of the diode package substrate 100 extends from the Mfc to the relatively deep slit 160 of the lower surface 120 from the light emitting diode package structure from the light emitting diode package substrate 100. Stripped down. Since the upper surface 110 and the lower surface of the LED package substrate 100 are respectively provided with a slit 160 deeper than the cutting line 130, it is more advantageous for the transfer of stress, and the peeling is easier, and the light-emitting diode after peeling is formed. The edge of the package structure is more regular 'the yield is higher. In addition, since the cutting line 130 and the slit 16 遮 are covered by the cover 300 during the injection molding of the light-emitting diode, the liquid packaging material does not flow into the cutting line 1 30 and the slit. 16 ,, therefore, will not affect the stress transmission at the cutting line 099136015 Form nickname A0101 Page 7 / 16 page 0992062942-0 201218412 130 and the slit 160. [0023] Compared with the prior art, in the method for forming a light emitting diode package structure of the present invention, the light emitting diode package substrate is pre-cut with cutting lines on the upper and lower surfaces, respectively, and respectively along the cutting lines on the upper and lower surfaces. The slit is opened, which facilitates the transfer of stress during the stripping process, and the peeling is easier. The edge of the light-emitting diode package structure after peeling is more regular and the yield is relatively high. [0024] In addition, those skilled in the art can make other changes within the spirit of the present invention. Of course, all changes made in accordance with the spirit of the present invention should be included in the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS [0025] FIG. 1 is a plan view of a light-emitting diode package substrate according to an embodiment of the present invention. [0026] FIG. 2 is a bottom view of a light-emitting diode package substrate according to an embodiment of the present invention. 3 is a cross-sectional view of the light emitting diode package substrate of FIG. 1 taken along line 11 I-Ι11. 4 is a plan view showing a light-emitting diode package in which the light-emitting diode package substrate of FIG. 1 is provided. [0029] FIG. 5 is a schematic view of a light-emitting diode package substrate covered with a cover plate and injected into a package body. [Description of Main Component Symbols] [0030] LED Diode Package Substrate: 100 099136015 Form No. A0101 Page 8 / Total 16 Page 0992062942-0 201218412 [0031] [0033] [0036] [0036] [0037]
[0038] [0039] [0040] [0041] [0042] [0043] Ο [0044] 上表面：110 下表面：120 切割線：13 0 單片：140 凹槽：141 上電極：142 下電極：143 通孔：15 0 切口 ： 16 0 發光二極體晶粒 遮蓋板：300 開孔：31 0 封裝層：400 注膠頭：500 200 099136015 表單編號Α0101 第9頁/共16頁 0992062942-0[0040] [0044] [0044] 上 [0044] Upper surface: 110 Lower surface: 120 Cutting line: 13 0 Single piece: 140 Groove: 141 Upper electrode: 142 Lower electrode: 143 Through Hole: 15 0 Incision: 16 0 Luminous Diode Grain Cover: 300 Opening: 31 0 Encapsulation: 400 Injection Head: 500 200 099136015 Form No. 1010101 Page 9 / Total 16 Page 0992062942-0