CN102412360B - Light-emitting diode packaging substrate and forming method of light-emitting diode packaging structure - Google Patents
Light-emitting diode packaging substrate and forming method of light-emitting diode packaging structure Download PDFInfo
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- CN102412360B CN102412360B CN201010290421.4A CN201010290421A CN102412360B CN 102412360 B CN102412360 B CN 102412360B CN 201010290421 A CN201010290421 A CN 201010290421A CN 102412360 B CN102412360 B CN 102412360B
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- cut
- encapsulation substrate
- led encapsulation
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Abstract
The invention relates to a light-emitting diode packaging substrate, comprising an upper surface and a lower surface which are opposite, wherein the upper surface and the lower surface form a plurality of intersected cutting lines respectively; the cutting lines cut the light-emitting diode substrate into a plurality of single pieces; through holes which penetrate through the upper surface and the lower surface are formed at the intersecting points of the cutting lines; and the two ends of the inner walls of the through holes, which are close to the two ends of the upper surface and the lower surface of the light-emitting diode packaging substrate, are respectively provided with a cutting port along the cutting lines. In the light-emitting diode packaging substrate, the cutting lines are respectively precut on the upper surface and the lower surface, and the upper surface and the lower surface are respectively provided with the cutting port along the cutting lines, so that in the stripping process, the stress transfer is beneficial, the stripping is easier, the edge of the stripped light-emitting diode packaging substrate is more regular, and the yield is higher.
Description
Technical field
The present invention relates to a kind of formation method of LED encapsulation substrate and package structure for LED.
Background technology
The cutting method of traditional package structure for LED generally adopts laser cutting, but in order to reduce cutting cost and to simplify processing procedure, mostly adopts at present sliver (breaking) mode on light-emitting diode processing procedure.Concrete grammar is: precut many lines of cut on the base plate for packaging that is used to form multiple encapsulating structures, complete after encapsulation procedure, along described line of cut, multiple package structure for LED are stripped down respectively, obtain the light-emittingdiode encapsulating structure of multiple separation.But in order to remain potted substrate overall structure, prevent that fracture appears in base plate for packaging in the time of precut or follow-up encapsulation procedure, it is too dark that line of cut can not be cut, this has just caused in the process of lift-off led encapsulating structure, because stress cannot be passed to line of cut place well, easily cause the light-emittingdiode encapsulating structure edge after peeling off irregular, thereby have influence on the yield of light-emittingdiode encapsulating structure.
Summary of the invention
In view of this, be necessary to provide the regular edges of the package structure for LED after a kind of peeling off, the formation method of the LED encapsulation substrate that yield is higher and package structure for LED.
A kind of LED encapsulation substrate, it comprises relative upper surface and lower surface.Described upper surface and lower surface form respectively many crossing lines of cut, and described LED encapsulation substrate is divided into multiple monolithics by described line of cut.The intersection point place of described line of cut is formed with the through hole that connects described substrate upper and lower surface, and described through-hole wall offers respectively otch near the upper surface of described LED encapsulation substrate and the two ends of lower surface along described line of cut.
A formation method for package structure for LED, it comprises following step:
One LED encapsulation substrate is provided, and it comprises relative upper surface and lower surface, and described upper surface and lower surface form respectively many crossing lines of cut, and described LED encapsulation substrate is evenly divided into multiple monolithics by described line of cut;
Offer the through hole that connects described LED encapsulation substrate upper surface and lower surface at the intersection point place of described line of cut;
Respectively offer otch near the upper surface of described LED encapsulation substrate and the two ends up and down of lower surface along described line of cut at described through-hole wall;
Multiple LED crystal particle are separately positioned on each monolithic of described LED encapsulation substrate;
Peel off respectively lower each monolithic along described line of cut, thereby form multiple package structure for LED.
Compared to prior art, LED encapsulation substrate of the present invention precuts and has line of cut respectively in upper and lower surface, and offer respectively otch along described line of cut in upper and lower surface, thereby in stripping process, be conducive to the transmission of stress, it is easier to peel off, and the edge of the package structure for LED after peeling off is more regular, and yield is higher.
Brief description of the drawings
Fig. 1 is the vertical view of the LED encapsulation substrate in embodiment of the present invention.
Fig. 2 is the upward view of the LED encapsulation substrate in embodiment of the present invention.
Fig. 3 is LED encapsulation substrate in Fig. 1 generalized section along I-I.
Fig. 4 is the vertical view that the LED encapsulation substrate in Fig. 1 is arranged to LED crystal particle.
Fig. 5 is the vertical view that the LED encapsulation substrate of encapsulated layer is set in the LED crystal particle in Fig. 4.
Main element symbol description
LED encapsulation substrate 100
Upper surface 110
Lower surface 120
Line of cut 130
Monolithic 140
Groove 141
Top electrode 142
Bottom electrode 143
Through hole 150
Otch 160
LED crystal particle 200
Encapsulated layer 300
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Refer to Fig. 1, Fig. 2 and Fig. 3, a kind of LED encapsulation substrate 100 that embodiment of the present invention provides comprises relative upper surface 110 and lower surface 120.
Described upper surface 110 and lower surface 120 are formed with respectively many crossing horizontal and longitudinal lines of cut 130, and described LED encapsulation substrate 100 is evenly divided into multiple monolithics 140 by described line of cut 130.For keeping the overall structure of described LED encapsulation substrate 100, prevent its fracture, the degree of depth of described line of cut 130 should not be too dark, and its concrete degree of depth is answered optic placode material and is determined.
The intersection point place of described horizontal and longitudinal line of cut 130 is formed with and connects the upper surface 110 of described LED encapsulation substrate 100 and the through hole 150 of lower surface 120.
On the upper surface 110 of described LED encapsulation substrate 100, described each monolithic 140 offers groove 141, in described groove 141, is provided with top electrode 142.On the lower surface 120 of described LED encapsulation substrate 100, be provided with the bottom electrode 143 corresponding with described top electrode 142, described top electrode 142 is electrically connected to each other with described bottom electrode 143.In the present embodiment, described LED encapsulation substrate 100 is a ceramic substrate.Be appreciated that in other embodiments, on described monolithic 140, also can not form groove 141.
Described through hole 150 inwalls offer respectively otch 160 near the upper surface 110 of described LED encapsulation substrate 100 and the two ends up and down of lower surface 120 along described line of cut 130.Described otch 160 is communicated with described line of cut 130, and darker than the degree of depth of described line of cut 130.In the present embodiment, described otch 160 is " V " font in the direction of vertical described LED encapsulation substrate 100.
LED encapsulation substrate 100 in embodiment of the present invention, because the degree of depth of precut described line of cut 130 is not dark, thereby can well keep the globality of described LED encapsulation substrate 100, prevent in the time of precut or follow-up encapsulation procedure described in LED encapsulation substrate 100 there is fracture.Meanwhile, again because the upper and lower surface of described LED encapsulation substrate 100 offers respectively otch along line of cut 130, thereby in stripping process, more be conducive to the transmission of stress, it is easier to peel off, and the edge of the package structure for LED after peeling off is more regular, and yield is higher.
See also Fig. 4 and Fig. 5, embodiment of the present invention provides a kind of formation method of package structure for LED, and described method comprises following step:
Step 1, refer to Fig. 1 to Fig. 3, one LED encapsulation substrate 100 is provided, it comprises relative upper surface 110 and lower surface 120, at described upper surface 110 and lower surface 120 corresponding precut many crossing horizontal and longitudinal lines of cut 130 that form respectively, described LED encapsulation substrate 100 is evenly divided into multiple monolithics 140 by described line of cut 130.On the upper surface 110 of described LED encapsulation substrate 100, described each monolithic 140 offers groove 141, in described groove 141, is provided with top electrode 142.On the lower surface 120 of described LED encapsulation substrate 100, be provided with the bottom electrode 143 corresponding with described top electrode 142, described top electrode 142 is electrically connected to each other with described bottom electrode 143.
Step 2, offers the through hole 150 that connects described LED encapsulation substrate 100 upper surfaces 110 and lower surface 120 at the intersection point place of described horizontal and longitudinal line of cut 130.
Step 3, respectively offers otch 160 near the upper surface 110 of described LED encapsulation substrate 100 and the two ends up and down of lower surface 120 along described line of cut 130 at described through hole 150 inwalls.Described otch 160 is communicated with described line of cut 130, and darker than the degree of depth of described line of cut 130.In the present embodiment, described otch 160 is " V " font in the direction of vertical described LED encapsulation substrate 100.
Step 4, refers to Fig. 4, multiple LED crystal particle 200 is separately positioned in the groove 141 of described each monolithic 140, and is electrically connected top electrode 142 wherein.
Step 5, refers to Fig. 5, in the groove 141 of each monolithic 140, forms encapsulated layer 300, covers described LED crystal particle 200.In the present embodiment, described encapsulated layer 300 can be that epoxy resin, silicones or both combined materials form.In described encapsulated layer 300, also can include fluorescent material, described fluorescent material can be the combination of garnet structure compound, silicate, nitride, nitrogen oxide, phosphide, sulfide or previous materials.
Step 6, peels off respectively lower each monolithic 140 along described line of cut 130, thereby forms multiple package structure for LED.
In stripping process, in the time that the upper surface 110 to described LED encapsulation substrate 100 imposes downforce, otch 160 places of upper surface 110 will produce tensile stress, this stress will be found to downward-extension the relatively fragile region of described LED encapsulation substrate 100, thereby will extend to relatively dark otch 160 places of described lower surface 120, and then package structure for LED is stripped down from described LED encapsulation substrate 100.Because the upper surface 110 at described LED encapsulation substrate 100 and lower surface are offered respectively the otch 160 darker with respect to line of cut 130, thereby be more conducive to the transmission of stress, it is easier to peel off, and the edge of the package structure for LED after peeling off is more regular, and yield is higher.
Compared to prior art, LED encapsulation substrate of the present invention precuts and has line of cut respectively in upper and lower surface, and offer respectively otch along described line of cut in upper and lower surface, thereby in stripping process, be conducive to the transmission of stress, it is easier to peel off, and the edge of the package structure for LED after peeling off is more regular, and yield is higher.
Be understandable that, for the person of ordinary skill of the art, can make change and the distortion that other various pictures are answered by technical conceive according to the present invention, and all these change and distortion all should belong to the protection range that power medicine of the present invention is asked.
Claims (9)
1. a LED encapsulation substrate, it comprises relative upper surface and lower surface, described upper surface and lower surface form respectively many crossing lines of cut, described LED encapsulation substrate is divided into multiple monolithics by described line of cut, it is characterized in that, the intersection point place of described line of cut is formed with the through hole that connects described substrate upper and lower surface, described through-hole wall offers respectively otch near the upper surface of described LED encapsulation substrate and the two ends of lower surface along described line of cut, the above otch of direction at vertical LED base plate for packaging is darker than the degree of depth of described line of cut.
2. LED encapsulation substrate as claimed in claim 1, is characterized in that: described substrate is ceramic substrate.
3. LED encapsulation substrate as claimed in claim 1, is characterized in that: described otch is communicated with described line of cut, and in the direction of vertical described LED encapsulation substrate, is " V " font.
4. LED encapsulation substrate as claimed in claim 1, it is characterized in that: on the upper surface of described substrate, described each monolithic offers groove, in described groove, be provided with top electrode, on the lower surface of described substrate, be provided with the bottom electrode corresponding with described top electrode, described top electrode and described bottom electrode are electrically connected to each other.
5. a formation method for package structure for LED, it comprises following step:
One LED encapsulation substrate is provided, and it comprises relative upper surface and lower surface, and described upper surface and lower surface form respectively many crossing lines of cut, and described LED encapsulation substrate is evenly divided into multiple monolithics by described line of cut;
Offer the through hole that connects described LED encapsulation substrate upper surface and lower surface at the intersection point place of described line of cut;
Respectively offer otch near the upper surface of described LED encapsulation substrate and the two ends up and down of lower surface along described line of cut at described through-hole wall, darker than the degree of depth of described line of cut at the above otch of direction of vertical LED base plate for packaging;
Multiple LED crystal particle are separately positioned on each monolithic of described LED encapsulation substrate;
Peel off respectively lower each monolithic along described line of cut, thereby form multiple package structure for LED.
6. the formation method of package structure for LED as claimed in claim 5, it is characterized in that: on the upper surface of described LED encapsulation substrate, described each monolithic offers groove, in described groove, be provided with top electrode, on the lower surface of described LED encapsulation substrate, be provided with the bottom electrode corresponding with described top electrode, described top electrode and described bottom electrode are electrically connected to each other.
7. the formation method of package structure for LED as claimed in claim 6, is characterized in that: described multiple LED crystal particle are separately positioned in the groove of described each monolithic, and is electrically connected top electrode wherein.
8. the formation method of package structure for LED as claimed in claim 5, is characterized in that: described otch is communicated with described line of cut, and is " V " font.
9. the formation method of package structure for LED as claimed in claim 5, it is characterized in that: after the step on the each monolithic that multiple LED crystal particle is separately positioned on to described LED encapsulation substrate, be also included in the groove of each monolithic and form encapsulated layer, cover the step of described LED crystal particle.
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| CN201010290421.4A CN102412360B (en) | 2010-09-23 | 2010-09-23 | Light-emitting diode packaging substrate and forming method of light-emitting diode packaging structure |
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| CN201010290421.4A CN102412360B (en) | 2010-09-23 | 2010-09-23 | Light-emitting diode packaging substrate and forming method of light-emitting diode packaging structure |
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| CN102760793A (en) * | 2011-04-26 | 2012-10-31 | 展晶科技(深圳)有限公司 | Manufacturing method of light-emitting diode encapsulation structure |
| US10522452B2 (en) | 2011-10-18 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging methods for semiconductor devices including forming trenches in workpiece to separate adjacent packaging substrates |
| CN104103738A (en) * | 2013-04-03 | 2014-10-15 | 江苏稳润光电有限公司 | LED packaging method and LED packaging structure thereof |
| CN109671822A (en) * | 2019-01-10 | 2019-04-23 | 佛山市国星半导体技术有限公司 | A kind of LED wafer of preventing laser cutting damage and preparation method thereof, cutting method |
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| US6518079B2 (en) * | 2000-12-20 | 2003-02-11 | Lumileds Lighting, U.S., Llc | Separation method for gallium nitride devices on lattice-mismatched substrates |
| JP2004259846A (en) * | 2003-02-25 | 2004-09-16 | Ogura Jewel Ind Co Ltd | Separation method for element formed on substrate |
| KR20080096997A (en) * | 2007-04-30 | 2008-11-04 | 삼성전기주식회사 | Method for forming the light emitting diode device |
| US8580657B2 (en) * | 2008-09-23 | 2013-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Protecting sidewalls of semiconductor chips using insulation films |
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Effective date of registration: 20201026 Address after: No.88, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee after: SU Normal University Semiconductor Materials and Equipment Research Institute (Pizhou) Co.,Ltd. Address before: 518109, Shenzhen, Guangdong, Baoan District province Longhua Street tenth Pine Industrial Zone, No. two, East Ring Road, No. two Patentee before: ZHANJING Technology (Shenzhen) Co.,Ltd. Patentee before: Rongchuang Energy Technology Co.,Ltd. |
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