TWI452684B - 具有背面溝槽之背面照明影像感測器 - Google Patents
具有背面溝槽之背面照明影像感測器 Download PDFInfo
- Publication number
- TWI452684B TWI452684B TW098123129A TW98123129A TWI452684B TW I452684 B TWI452684 B TW I452684B TW 098123129 A TW098123129 A TW 098123129A TW 98123129 A TW98123129 A TW 98123129A TW I452684 B TWI452684 B TW I452684B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- sensor
- trenches
- image sensor
- wafer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/169,810 US20100006908A1 (en) | 2008-07-09 | 2008-07-09 | Backside illuminated image sensor with shallow backside trench for photodiode isolation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201010071A TW201010071A (en) | 2010-03-01 |
| TWI452684B true TWI452684B (zh) | 2014-09-11 |
Family
ID=41504361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098123129A TWI452684B (zh) | 2008-07-09 | 2009-07-08 | 具有背面溝槽之背面照明影像感測器 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20100006908A1 (https=) |
| EP (1) | EP2311091B1 (https=) |
| JP (1) | JP5420656B2 (https=) |
| KR (1) | KR101341048B1 (https=) |
| CN (1) | CN102067316B (https=) |
| TW (1) | TWI452684B (https=) |
| WO (1) | WO2010027395A2 (https=) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8274715B2 (en) | 2005-07-28 | 2012-09-25 | Omnivision Technologies, Inc. | Processing color and panchromatic pixels |
| US8139130B2 (en) | 2005-07-28 | 2012-03-20 | Omnivision Technologies, Inc. | Image sensor with improved light sensitivity |
| US7916362B2 (en) * | 2006-05-22 | 2011-03-29 | Eastman Kodak Company | Image sensor with improved light sensitivity |
| US8031258B2 (en) | 2006-10-04 | 2011-10-04 | Omnivision Technologies, Inc. | Providing multiple video signals from single sensor |
| US8896712B2 (en) * | 2007-07-20 | 2014-11-25 | Omnivision Technologies, Inc. | Determining and correcting for imaging device motion during an exposure |
| US8350952B2 (en) * | 2008-06-04 | 2013-01-08 | Omnivision Technologies, Inc. | Image sensors with improved angle response |
| US8017426B2 (en) * | 2008-07-09 | 2011-09-13 | Omnivision Technologies, Inc. | Color filter array alignment mark formation in backside illuminated image sensors |
| US7915067B2 (en) * | 2008-07-09 | 2011-03-29 | Eastman Kodak Company | Backside illuminated image sensor with reduced dark current |
| US7859033B2 (en) | 2008-07-09 | 2010-12-28 | Eastman Kodak Company | Wafer level processing for backside illuminated sensors |
| US8224082B2 (en) * | 2009-03-10 | 2012-07-17 | Omnivision Technologies, Inc. | CFA image with synthetic panchromatic image |
| US8068153B2 (en) * | 2009-03-27 | 2011-11-29 | Omnivision Technologies, Inc. | Producing full-color image using CFA image |
| US8045024B2 (en) * | 2009-04-15 | 2011-10-25 | Omnivision Technologies, Inc. | Producing full-color image with reduced motion blur |
| US8674469B2 (en) * | 2009-04-23 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Isolation structure for backside illuminated image sensor |
| US8460979B2 (en) * | 2009-04-27 | 2013-06-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a backside illuminated image sensor |
| US8203633B2 (en) * | 2009-05-27 | 2012-06-19 | Omnivision Technologies, Inc. | Four-channel color filter array pattern |
| US8237831B2 (en) * | 2009-05-28 | 2012-08-07 | Omnivision Technologies, Inc. | Four-channel color filter array interpolation |
| US8125546B2 (en) * | 2009-06-05 | 2012-02-28 | Omnivision Technologies, Inc. | Color filter array pattern having four-channels |
| US8253832B2 (en) * | 2009-06-09 | 2012-08-28 | Omnivision Technologies, Inc. | Interpolation for four-channel color filter array |
| JP2011086709A (ja) * | 2009-10-14 | 2011-04-28 | Toshiba Corp | 固体撮像装置及びその製造方法 |
| US8389377B2 (en) | 2010-04-02 | 2013-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sensor element isolation in a backside illuminated image sensor |
| KR101803719B1 (ko) * | 2010-10-26 | 2017-12-04 | 삼성전자 주식회사 | 후면 조사형 액티브 픽셀 센서 어레이 및 그 제조 방법, 이를 구비하는 후면 조사형 이미지 센서 |
| US8308379B2 (en) | 2010-12-01 | 2012-11-13 | Digitaloptics Corporation | Three-pole tilt control system for camera module |
| FR2976119A1 (fr) * | 2011-06-06 | 2012-12-07 | St Microelectronics Crolles 2 | Procede de fabrication d'un dispositif d'imagerie a illumination face arriere, et dispositif correspondant |
| WO2013062687A1 (en) * | 2011-10-28 | 2013-05-02 | Intevac, Inc. | Backside-thinned image sensor using a12o3 surface passivation |
| US9099389B2 (en) * | 2012-02-10 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for reducing stripe patterns |
| US9029759B2 (en) * | 2012-04-12 | 2015-05-12 | Nan Chang O-Film Optoelectronics Technology Ltd | Compact camera modules with features for reducing Z-height and facilitating lens alignment and methods for manufacturing the same |
| US9001268B2 (en) | 2012-08-10 | 2015-04-07 | Nan Chang O-Film Optoelectronics Technology Ltd | Auto-focus camera module with flexible printed circuit extension |
| US9287308B2 (en) | 2013-04-08 | 2016-03-15 | Omnivision Technologies, Inc. | Image sensor having metal contact coupled through a contact etch stop layer with an isolation region |
| KR102268714B1 (ko) | 2014-06-23 | 2021-06-28 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
| KR102340346B1 (ko) * | 2014-08-26 | 2021-12-16 | 삼성전자주식회사 | 칼라 필터 어레이 및 그 제조 방법 및 이를 포함하는 이미지 센서 |
| US9484370B2 (en) | 2014-10-27 | 2016-11-01 | Omnivision Technologies, Inc. | Isolated global shutter pixel storage structure |
| US10134926B2 (en) | 2015-02-03 | 2018-11-20 | Microsoft Technology Licensing, Llc | Quantum-efficiency-enhanced time-of-flight detector |
| US9564405B2 (en) | 2015-05-15 | 2017-02-07 | Skyworks Solutions, Inc. | Substrate opening formation in semiconductor devices |
| CN108346673B (zh) * | 2017-01-23 | 2021-11-12 | 中芯国际集成电路制造(上海)有限公司 | 一种背照式图像传感器及其制造方法和电子装置 |
| FR3074962A1 (fr) | 2017-12-08 | 2019-06-14 | Stmicroelectronics (Crolles 2) Sas | Dispositif electronique capteur d'images |
| CN108470741A (zh) * | 2018-03-16 | 2018-08-31 | 昆山锐芯微电子有限公司 | 图像传感器及其形成方法 |
| US10432883B1 (en) * | 2018-06-12 | 2019-10-01 | Semiconductor Components Industries, Llc | Backside illuminated global shutter pixels |
| WO2021034705A1 (en) * | 2019-08-21 | 2021-02-25 | Life Technologies Corporation | Devices incorporating a multilane flow cell |
| CN110783356B (zh) * | 2019-11-05 | 2022-09-02 | 锐芯微电子股份有限公司 | 时间延迟积分图像传感器及其形成方法 |
| US12422617B2 (en) | 2022-06-16 | 2025-09-23 | Globalfoundries U.S. Inc. | Photonic integrated circuit including passive optical guard |
| US20240094465A1 (en) * | 2022-09-16 | 2024-03-21 | Globalfoundries U.S. Inc. | Photonic integrated circuit including plurality of discrete optical guard elements |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060068586A1 (en) * | 2004-09-17 | 2006-03-30 | Bedabrata Pain | Method for implementation of back-illuminated CMOS or CCD imagers |
| WO2007030226A2 (en) * | 2005-09-07 | 2007-03-15 | Cypress Semiconductor Corporation | Backside thinned image sensor with integrated lens stack |
| US20070194397A1 (en) * | 2006-02-17 | 2007-08-23 | Adkisson James W | Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NZ222404A (en) * | 1987-11-02 | 1991-06-25 | Precision Technology Inc | Vehicle tracking by comparison of transmitted phase at multiple receivers |
| DE3728401A1 (de) * | 1987-08-26 | 1989-03-09 | Robot Foto Electr Kg | Verkehrsueberwachungseinrichtung |
| US5161632A (en) * | 1990-06-01 | 1992-11-10 | Mitsubishi Denki K.K. | Tracking control device for a vehicle |
| US5155689A (en) * | 1991-01-17 | 1992-10-13 | By-Word Technologies, Inc. | Vehicle locating and communicating method and apparatus |
| JPH05296767A (ja) * | 1992-04-20 | 1993-11-09 | Mitsubishi Electric Corp | 車間距離検出装置 |
| US5227313A (en) | 1992-07-24 | 1993-07-13 | Eastman Kodak Company | Process for making backside illuminated image sensors |
| US5244817A (en) | 1992-08-03 | 1993-09-14 | Eastman Kodak Company | Method of making backside illuminated image sensors |
| US6371000B1 (en) * | 1994-07-11 | 2002-04-16 | Jaycor | Electromagnetic vehicle disabler system and method |
| US5490075A (en) * | 1994-08-01 | 1996-02-06 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Global positioning system synchronized active light autonomous docking system |
| US5786236A (en) | 1996-03-29 | 1998-07-28 | Eastman Kodak Company | Backside thinning using ion-beam figuring |
| FI100229B (fi) * | 1996-05-27 | 1997-10-31 | Markku Ahti Limingoja | Menetelmä ja laitteisto toisen ajoneuvon pakkopysäyttämiseksi |
| US5892441A (en) * | 1996-06-26 | 1999-04-06 | Par Government Systems Corporation | Sensing with active electronic tags |
| US5839759A (en) * | 1997-03-06 | 1998-11-24 | Trigo; Kevin A. | Vehicle capture device |
| US6052068A (en) * | 1997-03-25 | 2000-04-18 | Frederick J. Price | Vehicle identification system |
| US6429036B1 (en) | 1999-01-14 | 2002-08-06 | Micron Technology, Inc. | Backside illumination of CMOS image sensor |
| US6168965B1 (en) | 1999-08-12 | 2001-01-02 | Tower Semiconductor Ltd. | Method for making backside illuminated image sensor |
| JP4235787B2 (ja) * | 2001-10-03 | 2009-03-11 | ソニー株式会社 | 固体撮像素子の製造方法 |
| JP2006506813A (ja) * | 2002-11-12 | 2006-02-23 | マイクロン テクノロジー インコーポレイテッド | Cmosイメージセンサにおける暗電流を減少させる接地ゲート及び分離技術 |
| US7091536B2 (en) * | 2002-11-14 | 2006-08-15 | Micron Technology, Inc. | Isolation process and structure for CMOS imagers |
| US7462553B2 (en) * | 2003-06-25 | 2008-12-09 | Semicoa | Ultra thin back-illuminated photodiode array fabrication methods |
| CA2435453C (en) | 2003-07-16 | 2008-08-05 | Robert James Hunter | Conversion kit for turning a cross-legged folding cot into a tiered cot |
| US7214999B2 (en) * | 2003-10-31 | 2007-05-08 | Motorola, Inc. | Integrated photoserver for CMOS imagers |
| JP4412710B2 (ja) * | 2003-11-25 | 2010-02-10 | キヤノン株式会社 | 光電変換装置の設計方法 |
| JP2005353996A (ja) * | 2004-06-14 | 2005-12-22 | Sony Corp | 固体撮像素子とその製造方法、並びに半導体装置とその製造方法 |
| US7385238B2 (en) | 2004-08-16 | 2008-06-10 | Micron Technology, Inc. | Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors |
| JP4841834B2 (ja) | 2004-12-24 | 2011-12-21 | 浜松ホトニクス株式会社 | ホトダイオードアレイ |
| US8139130B2 (en) | 2005-07-28 | 2012-03-20 | Omnivision Technologies, Inc. | Image sensor with improved light sensitivity |
| US7315014B2 (en) | 2005-08-30 | 2008-01-01 | Micron Technology, Inc. | Image sensors with optical trench |
| US7576404B2 (en) * | 2005-12-16 | 2009-08-18 | Icemos Technology Ltd. | Backlit photodiode and method of manufacturing a backlit photodiode |
| JP2007288136A (ja) * | 2006-03-24 | 2007-11-01 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
| JP5055026B2 (ja) * | 2007-05-31 | 2012-10-24 | 富士フイルム株式会社 | 撮像素子、撮像素子の製造方法、及び、撮像素子用の半導体基板 |
| WO2009023603A1 (en) * | 2007-08-10 | 2009-02-19 | Semicoa | Back-illuminated, thin photodiode arrays with trench isolation |
| US7985612B2 (en) * | 2008-02-19 | 2011-07-26 | Sri International | Method and device for reducing crosstalk in back illuminated imagers |
| US7859033B2 (en) * | 2008-07-09 | 2010-12-28 | Eastman Kodak Company | Wafer level processing for backside illuminated sensors |
| US8017426B2 (en) * | 2008-07-09 | 2011-09-13 | Omnivision Technologies, Inc. | Color filter array alignment mark formation in backside illuminated image sensors |
| KR20110034930A (ko) * | 2009-09-29 | 2011-04-06 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
-
2008
- 2008-07-09 US US12/169,810 patent/US20100006908A1/en not_active Abandoned
-
2009
- 2009-07-07 EP EP09796848.1A patent/EP2311091B1/en active Active
- 2009-07-07 JP JP2011517413A patent/JP5420656B2/ja active Active
- 2009-07-07 CN CN2009801231369A patent/CN102067316B/zh active Active
- 2009-07-07 KR KR1020117003045A patent/KR101341048B1/ko active Active
- 2009-07-07 WO PCT/US2009/003977 patent/WO2010027395A2/en not_active Ceased
- 2009-07-08 TW TW098123129A patent/TWI452684B/zh active
-
2010
- 2010-11-11 US US12/944,268 patent/US8076170B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060068586A1 (en) * | 2004-09-17 | 2006-03-30 | Bedabrata Pain | Method for implementation of back-illuminated CMOS or CCD imagers |
| WO2007030226A2 (en) * | 2005-09-07 | 2007-03-15 | Cypress Semiconductor Corporation | Backside thinned image sensor with integrated lens stack |
| US20070194397A1 (en) * | 2006-02-17 | 2007-08-23 | Adkisson James W | Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5420656B2 (ja) | 2014-02-19 |
| WO2010027395A2 (en) | 2010-03-11 |
| KR101341048B1 (ko) | 2013-12-12 |
| JP2011527829A (ja) | 2011-11-04 |
| US20100006908A1 (en) | 2010-01-14 |
| CN102067316A (zh) | 2011-05-18 |
| TW201010071A (en) | 2010-03-01 |
| US20110059572A1 (en) | 2011-03-10 |
| US8076170B2 (en) | 2011-12-13 |
| EP2311091B1 (en) | 2016-11-23 |
| CN102067316B (zh) | 2013-05-01 |
| WO2010027395A3 (en) | 2010-05-14 |
| KR20110030670A (ko) | 2011-03-23 |
| EP2311091A2 (en) | 2011-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI452684B (zh) | 具有背面溝槽之背面照明影像感測器 | |
| US7915067B2 (en) | Backside illuminated image sensor with reduced dark current | |
| US8017426B2 (en) | Color filter array alignment mark formation in backside illuminated image sensors | |
| US8119435B2 (en) | Wafer level processing for backside illuminated image sensors | |
| KR101443438B1 (ko) | 후방 조명식 cmos 이미지 센서 | |
| KR100997299B1 (ko) | 이미지센서 및 그 제조방법 | |
| US8211732B2 (en) | Image sensor with raised photosensitive elements | |
| CN101764142A (zh) | 图像传感器及其制造方法 | |
| US20230378217A1 (en) | Photodiode structure for image sensor | |
| US20100026824A1 (en) | Image sensor with reduced red light crosstalk | |
| US7825494B2 (en) | Image sensor and method for manufacturing the same | |
| US20100093128A1 (en) | Method for manufacturing image sensor | |
| KR20100079450A (ko) | 후면 수광 이미지센서의 제조방법 | |
| KR20100079247A (ko) | 후면수광 이미지센서 및 그 제조방법 | |
| US20100006964A1 (en) | Backside illuminated image sensor having biased conductive layer for increased quantum efficiency |