TWI451552B - 積體電路結構 - Google Patents

積體電路結構 Download PDF

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Publication number
TWI451552B
TWI451552B TW099118862A TW99118862A TWI451552B TW I451552 B TWI451552 B TW I451552B TW 099118862 A TW099118862 A TW 099118862A TW 99118862 A TW99118862 A TW 99118862A TW I451552 B TWI451552 B TW I451552B
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TW
Taiwan
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group
channel
region
source
gate
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Application number
TW099118862A
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English (en)
Chinese (zh)
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TW201117342A (en
Inventor
Chih Hsin Ko
Clement Hsingjen Wann
Original Assignee
Taiwan Semiconductor Mfg
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Priority claimed from US12/615,996 external-priority patent/US8816391B2/en
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of TW201117342A publication Critical patent/TW201117342A/zh
Application granted granted Critical
Publication of TWI451552B publication Critical patent/TWI451552B/zh

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Manufacturing & Machinery (AREA)
TW099118862A 2009-11-10 2010-06-10 積體電路結構 TWI451552B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/615,996 US8816391B2 (en) 2009-04-01 2009-11-10 Source/drain engineering of devices with high-mobility channels

Publications (2)

Publication Number Publication Date
TW201117342A TW201117342A (en) 2011-05-16
TWI451552B true TWI451552B (zh) 2014-09-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW099118862A TWI451552B (zh) 2009-11-10 2010-06-10 積體電路結構

Country Status (3)

Country Link
JP (1) JP5328722B2 (ja)
KR (1) KR101218735B1 (ja)
TW (1) TWI451552B (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8936976B2 (en) * 2009-12-23 2015-01-20 Intel Corporation Conductivity improvements for III-V semiconductor devices
US8344425B2 (en) * 2009-12-30 2013-01-01 Intel Corporation Multi-gate III-V quantum well structures
US20120161105A1 (en) * 2010-12-22 2012-06-28 Willy Rachmady Uniaxially strained quantum well device and method of making same
US9246004B2 (en) 2011-11-15 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Strained structures of semiconductor devices
KR20140097569A (ko) * 2012-07-09 2014-08-06 도호쿠 다이가쿠 3차원 구조의 mosfet 및 그 제조 방법
US8896101B2 (en) 2012-12-21 2014-11-25 Intel Corporation Nonplanar III-N transistors with compositionally graded semiconductor channels
US9159824B2 (en) 2013-02-27 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs with strained well regions
US9087902B2 (en) 2013-02-27 2015-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs with strained well regions
US9385234B2 (en) 2013-02-27 2016-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs with strained well regions
US9214555B2 (en) * 2013-03-12 2015-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Barrier layer for FinFET channels
US8963258B2 (en) 2013-03-13 2015-02-24 Taiwan Semiconductor Manufacturing Company FinFET with bottom SiGe layer in source/drain
KR102017625B1 (ko) * 2013-05-10 2019-10-22 삼성전자주식회사 반도체 장치 및 그 제조방법
US9178045B2 (en) * 2013-09-27 2015-11-03 Samsung Electronics Co., Ltd. Integrated circuit devices including FinFETS and methods of forming the same
KR101515071B1 (ko) * 2013-11-29 2015-04-24 가천대학교 산학협력단 실리콘 집적가능한 게르마늄 기반의 높은 정공이동도를 갖는 트랜지스터
US9263522B2 (en) * 2013-12-09 2016-02-16 Qualcomm Incorporated Transistor with a diffusion barrier
KR102274734B1 (ko) * 2014-01-23 2021-07-07 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102190477B1 (ko) * 2014-04-25 2020-12-14 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR101668442B1 (ko) * 2015-02-17 2016-10-21 경북대학교 산학협력단 반도체 소자 제조방법
KR102326112B1 (ko) 2015-03-30 2021-11-15 삼성전자주식회사 반도체 소자

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW369730B (en) * 1997-03-19 1999-09-11 Sharp Kk Semiconductor luminescence element
JP2005051241A (ja) * 2003-07-25 2005-02-24 Interuniv Micro Electronica Centrum Vzw 多層ゲート半導体デバイス及びその製造方法
JP2008160131A (ja) * 2006-12-22 2008-07-10 Interuniv Micro Electronica Centrum Vzw 電界効果トランジスタ素子およびその製造方法
JP2009105163A (ja) * 2007-10-22 2009-05-14 Toshiba Corp 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3255973B2 (ja) * 1991-08-02 2002-02-12 株式会社日立製作所 半導体装置
US20080001173A1 (en) * 2006-06-23 2008-01-03 International Business Machines Corporation BURIED CHANNEL MOSFET USING III-V COMPOUND SEMICONDUCTORS AND HIGH k GATE DIELECTRICS

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW369730B (en) * 1997-03-19 1999-09-11 Sharp Kk Semiconductor luminescence element
JP2005051241A (ja) * 2003-07-25 2005-02-24 Interuniv Micro Electronica Centrum Vzw 多層ゲート半導体デバイス及びその製造方法
JP2008160131A (ja) * 2006-12-22 2008-07-10 Interuniv Micro Electronica Centrum Vzw 電界効果トランジスタ素子およびその製造方法
JP2009105163A (ja) * 2007-10-22 2009-05-14 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JP2011103434A (ja) 2011-05-26
KR101218735B1 (ko) 2013-01-18
TW201117342A (en) 2011-05-16
KR20110052432A (ko) 2011-05-18
JP5328722B2 (ja) 2013-10-30

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