TWI448828B - 輻射源裝置 - Google Patents
輻射源裝置 Download PDFInfo
- Publication number
- TWI448828B TWI448828B TW097132223A TW97132223A TWI448828B TW I448828 B TWI448828 B TW I448828B TW 097132223 A TW097132223 A TW 097132223A TW 97132223 A TW97132223 A TW 97132223A TW I448828 B TWI448828 B TW I448828B
- Authority
- TW
- Taiwan
- Prior art keywords
- radiation
- conduit
- buffer gas
- plasma
- interaction
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims description 102
- 230000003993 interaction Effects 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 32
- 238000001459 lithography Methods 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 238000005286 illumination Methods 0.000 claims description 4
- 239000011800 void material Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 73
- 239000002245 particle Substances 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 108010085603 SFLLRNPND Proteins 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- X-Ray Techniques (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US93564307P | 2007-08-23 | 2007-08-23 | |
US12/078,663 US7763871B2 (en) | 2008-04-02 | 2008-04-02 | Radiation source |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200919112A TW200919112A (en) | 2009-05-01 |
TWI448828B true TWI448828B (zh) | 2014-08-11 |
Family
ID=40019398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097132223A TWI448828B (zh) | 2007-08-23 | 2008-08-22 | 輻射源裝置 |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP2191698B1 (nl) |
JP (1) | JP5659015B2 (nl) |
KR (1) | KR101528581B1 (nl) |
CN (1) | CN101785368B (nl) |
NL (2) | NL1035846A1 (nl) |
TW (1) | TWI448828B (nl) |
WO (1) | WO2009024860A2 (nl) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8723147B2 (en) * | 2009-04-02 | 2014-05-13 | ETH Zürich | Extreme ultraviolet light source with a debris-mitigated and cooled collector optics |
NL2004706A (nl) * | 2009-07-22 | 2011-01-25 | Asml Netherlands Bv | Radiation source. |
JP5717761B2 (ja) * | 2010-01-07 | 2015-05-13 | エーエスエムエル ネザーランズ ビー.ブイ. | Euv放射源およびリソグラフィ装置 |
CN102859442B (zh) * | 2010-04-22 | 2015-07-08 | Asml荷兰有限公司 | 收集器反射镜组件以及用于产生极紫外辐射的方法 |
CN102621815B (zh) * | 2011-01-26 | 2016-12-21 | Asml荷兰有限公司 | 用于光刻设备的反射光学部件及器件制造方法 |
JP5952399B2 (ja) * | 2011-08-05 | 2016-07-13 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源、リソグラフィ装置のための方法及びデバイス製造方法 |
US20150261095A1 (en) * | 2011-10-07 | 2015-09-17 | Asml Netherlands B.V. | Radiation Source |
WO2014063878A2 (en) | 2012-10-26 | 2014-05-01 | Asml Netherlands B.V. | Lithographic apparatus |
US10101664B2 (en) * | 2014-11-01 | 2018-10-16 | Kla-Tencor Corporation | Apparatus and methods for optics protection from debris in plasma-based light source |
US10034362B2 (en) * | 2014-12-16 | 2018-07-24 | Kla-Tencor Corporation | Plasma-based light source |
EP3291650B1 (en) | 2016-09-02 | 2019-06-05 | ETH Zürich | Device and method for generating uv or x-ray radiation by means of a plasma |
WO2023159205A1 (en) * | 2022-02-18 | 2023-08-24 | Lawrence Livermore National Security, Llc | Plasma and gas based optical components to control radiation damage |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200421040A (en) * | 2002-10-03 | 2004-10-16 | Asml Netherlands Bv | Radiation source, lithographic apparatus, and device manufacturing method |
US20060219959A1 (en) * | 2005-03-31 | 2006-10-05 | Xtreme Technologies Gmbh | Radiation source for the generation of short-wavelength radiation |
TW200710985A (en) * | 2005-04-01 | 2007-03-16 | Lam Res Corp | High strip rate downstream chamber |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09245992A (ja) * | 1996-03-12 | 1997-09-19 | Nikon Corp | X線発生装置 |
AU1241401A (en) * | 1999-10-27 | 2001-05-08 | Jmar Research, Inc. | Method and radiation generating system using microtargets |
US6493423B1 (en) * | 1999-12-24 | 2002-12-10 | Koninklijke Philips Electronics N.V. | Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit |
JP4189658B2 (ja) * | 2003-05-15 | 2008-12-03 | ウシオ電機株式会社 | 極端紫外光発生装置 |
JP4578901B2 (ja) | 2004-09-09 | 2010-11-10 | 株式会社小松製作所 | 極端紫外光源装置 |
JP2006294606A (ja) * | 2005-04-12 | 2006-10-26 | Xtreme Technologies Gmbh | プラズマ放射線源 |
JP2006329664A (ja) * | 2005-05-23 | 2006-12-07 | Ushio Inc | 極端紫外光発生装置 |
JP2007018931A (ja) * | 2005-07-08 | 2007-01-25 | Canon Inc | 光源装置、露光装置及びデバイス製造方法 |
JP2007134166A (ja) * | 2005-11-10 | 2007-05-31 | Ushio Inc | 極端紫外光光源装置 |
JP4904809B2 (ja) * | 2005-12-28 | 2012-03-28 | ウシオ電機株式会社 | 極端紫外光光源装置 |
JP2008041391A (ja) * | 2006-08-04 | 2008-02-21 | Canon Inc | 光源装置、露光装置及びデバイス製造方法 |
-
2008
- 2008-08-19 NL NL1035846A patent/NL1035846A1/nl active Search and Examination
- 2008-08-20 KR KR1020107003754A patent/KR101528581B1/ko active IP Right Grant
- 2008-08-20 JP JP2010521496A patent/JP5659015B2/ja active Active
- 2008-08-20 CN CN200880103732.6A patent/CN101785368B/zh active Active
- 2008-08-20 EP EP08806915A patent/EP2191698B1/en active Active
- 2008-08-20 WO PCT/IB2008/002201 patent/WO2009024860A2/en active Application Filing
- 2008-08-22 TW TW097132223A patent/TWI448828B/zh active
- 2008-08-25 NL NL1035863A patent/NL1035863A1/nl active Search and Examination
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200421040A (en) * | 2002-10-03 | 2004-10-16 | Asml Netherlands Bv | Radiation source, lithographic apparatus, and device manufacturing method |
US20060219959A1 (en) * | 2005-03-31 | 2006-10-05 | Xtreme Technologies Gmbh | Radiation source for the generation of short-wavelength radiation |
TW200710985A (en) * | 2005-04-01 | 2007-03-16 | Lam Res Corp | High strip rate downstream chamber |
Non-Patent Citations (1)
Title |
---|
U * |
Also Published As
Publication number | Publication date |
---|---|
WO2009024860A3 (en) | 2009-04-16 |
JP5659015B2 (ja) | 2015-01-28 |
WO2009024860A2 (en) | 2009-02-26 |
KR20100049607A (ko) | 2010-05-12 |
CN101785368B (zh) | 2013-01-02 |
NL1035863A1 (nl) | 2009-02-24 |
EP2191698B1 (en) | 2012-10-03 |
EP2191698A2 (en) | 2010-06-02 |
JP2010537377A (ja) | 2010-12-02 |
CN101785368A (zh) | 2010-07-21 |
TW200919112A (en) | 2009-05-01 |
KR101528581B1 (ko) | 2015-06-12 |
NL1035846A1 (nl) | 2009-02-24 |
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