TWI448828B - 輻射源裝置 - Google Patents

輻射源裝置 Download PDF

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Publication number
TWI448828B
TWI448828B TW097132223A TW97132223A TWI448828B TW I448828 B TWI448828 B TW I448828B TW 097132223 A TW097132223 A TW 097132223A TW 97132223 A TW97132223 A TW 97132223A TW I448828 B TWI448828 B TW I448828B
Authority
TW
Taiwan
Prior art keywords
radiation
conduit
buffer gas
plasma
interaction
Prior art date
Application number
TW097132223A
Other languages
English (en)
Chinese (zh)
Other versions
TW200919112A (en
Inventor
Vadim Yevgenyevich Banine
Vladimir Vitalevich Ivanov
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/078,663 external-priority patent/US7763871B2/en
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW200919112A publication Critical patent/TW200919112A/zh
Application granted granted Critical
Publication of TWI448828B publication Critical patent/TWI448828B/zh

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/003Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/008Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
  • Plasma Technology (AREA)
TW097132223A 2007-08-23 2008-08-22 輻射源裝置 TWI448828B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US93564307P 2007-08-23 2007-08-23
US12/078,663 US7763871B2 (en) 2008-04-02 2008-04-02 Radiation source

Publications (2)

Publication Number Publication Date
TW200919112A TW200919112A (en) 2009-05-01
TWI448828B true TWI448828B (zh) 2014-08-11

Family

ID=40019398

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097132223A TWI448828B (zh) 2007-08-23 2008-08-22 輻射源裝置

Country Status (7)

Country Link
EP (1) EP2191698B1 (nl)
JP (1) JP5659015B2 (nl)
KR (1) KR101528581B1 (nl)
CN (1) CN101785368B (nl)
NL (2) NL1035846A1 (nl)
TW (1) TWI448828B (nl)
WO (1) WO2009024860A2 (nl)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8723147B2 (en) * 2009-04-02 2014-05-13 ETH Zürich Extreme ultraviolet light source with a debris-mitigated and cooled collector optics
NL2004706A (nl) * 2009-07-22 2011-01-25 Asml Netherlands Bv Radiation source.
JP5717761B2 (ja) * 2010-01-07 2015-05-13 エーエスエムエル ネザーランズ ビー.ブイ. Euv放射源およびリソグラフィ装置
CN102859442B (zh) * 2010-04-22 2015-07-08 Asml荷兰有限公司 收集器反射镜组件以及用于产生极紫外辐射的方法
CN102621815B (zh) * 2011-01-26 2016-12-21 Asml荷兰有限公司 用于光刻设备的反射光学部件及器件制造方法
JP5952399B2 (ja) * 2011-08-05 2016-07-13 エーエスエムエル ネザーランズ ビー.ブイ. 放射源、リソグラフィ装置のための方法及びデバイス製造方法
US20150261095A1 (en) * 2011-10-07 2015-09-17 Asml Netherlands B.V. Radiation Source
WO2014063878A2 (en) 2012-10-26 2014-05-01 Asml Netherlands B.V. Lithographic apparatus
US10101664B2 (en) * 2014-11-01 2018-10-16 Kla-Tencor Corporation Apparatus and methods for optics protection from debris in plasma-based light source
US10034362B2 (en) * 2014-12-16 2018-07-24 Kla-Tencor Corporation Plasma-based light source
EP3291650B1 (en) 2016-09-02 2019-06-05 ETH Zürich Device and method for generating uv or x-ray radiation by means of a plasma
WO2023159205A1 (en) * 2022-02-18 2023-08-24 Lawrence Livermore National Security, Llc Plasma and gas based optical components to control radiation damage

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200421040A (en) * 2002-10-03 2004-10-16 Asml Netherlands Bv Radiation source, lithographic apparatus, and device manufacturing method
US20060219959A1 (en) * 2005-03-31 2006-10-05 Xtreme Technologies Gmbh Radiation source for the generation of short-wavelength radiation
TW200710985A (en) * 2005-04-01 2007-03-16 Lam Res Corp High strip rate downstream chamber

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JPH09245992A (ja) * 1996-03-12 1997-09-19 Nikon Corp X線発生装置
AU1241401A (en) * 1999-10-27 2001-05-08 Jmar Research, Inc. Method and radiation generating system using microtargets
US6493423B1 (en) * 1999-12-24 2002-12-10 Koninklijke Philips Electronics N.V. Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit
JP4189658B2 (ja) * 2003-05-15 2008-12-03 ウシオ電機株式会社 極端紫外光発生装置
JP4578901B2 (ja) 2004-09-09 2010-11-10 株式会社小松製作所 極端紫外光源装置
JP2006294606A (ja) * 2005-04-12 2006-10-26 Xtreme Technologies Gmbh プラズマ放射線源
JP2006329664A (ja) * 2005-05-23 2006-12-07 Ushio Inc 極端紫外光発生装置
JP2007018931A (ja) * 2005-07-08 2007-01-25 Canon Inc 光源装置、露光装置及びデバイス製造方法
JP2007134166A (ja) * 2005-11-10 2007-05-31 Ushio Inc 極端紫外光光源装置
JP4904809B2 (ja) * 2005-12-28 2012-03-28 ウシオ電機株式会社 極端紫外光光源装置
JP2008041391A (ja) * 2006-08-04 2008-02-21 Canon Inc 光源装置、露光装置及びデバイス製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200421040A (en) * 2002-10-03 2004-10-16 Asml Netherlands Bv Radiation source, lithographic apparatus, and device manufacturing method
US20060219959A1 (en) * 2005-03-31 2006-10-05 Xtreme Technologies Gmbh Radiation source for the generation of short-wavelength radiation
TW200710985A (en) * 2005-04-01 2007-03-16 Lam Res Corp High strip rate downstream chamber

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
U *

Also Published As

Publication number Publication date
WO2009024860A3 (en) 2009-04-16
JP5659015B2 (ja) 2015-01-28
WO2009024860A2 (en) 2009-02-26
KR20100049607A (ko) 2010-05-12
CN101785368B (zh) 2013-01-02
NL1035863A1 (nl) 2009-02-24
EP2191698B1 (en) 2012-10-03
EP2191698A2 (en) 2010-06-02
JP2010537377A (ja) 2010-12-02
CN101785368A (zh) 2010-07-21
TW200919112A (en) 2009-05-01
KR101528581B1 (ko) 2015-06-12
NL1035846A1 (nl) 2009-02-24

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