TWI443865B - 發光二極體晶粒及其製作方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000004065 semiconductor Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 35
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- 230000007704 transition Effects 0.000 claims description 22
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 19
- 229910002601 GaN Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 5
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 16
- -1 aluminum nitrides Chemical class 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 8
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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Description
本發明涉及一種發光二極體晶粒及其製作方法,尤其涉及一種具有較高出光效率的發光二極體晶粒及其製作方法。
發光二極體(Light Emitting Diode,LED)是一種可將電流轉換成特定波長範圍的光的半導體元件。發光二極體以其亮度高、工作電壓低、功耗小、易與積體電路匹配、驅動簡單、壽命長等優點,從而可作為光源而廣泛應用於照明領域。
習知的發光二極體晶粒通常包括基板以及在基板表面生長的半導體發光結構。然上述結構存在以下問題:半導體發光結構所發出的朝向基板一側的光線在進入基板後,會被基板所吸收,從而降低發光二極體晶粒的出光效率。
鑒於此,有必要提供一種具有較高出光效率的發光二極體晶粒及其製作方法。
一種發光二極體晶粒,其包括:基板;形成於所述基板上的磊晶層,該磊晶層包括依次生長的第一半導體層、發光層及第二半導體層;在該磊晶層與該基板之間的複數個間隔設置的球形氮化鋁,該第一半導體層完全覆蓋該複數個球形氮化鋁。
一種發光二極體晶粒的製作方法,其包括以下步驟:提供一基板,該基板由藍寶石、碳化矽、矽或氮化鎵等材料製成;在基板上依次磊晶形成緩衝層與過渡層;在過渡層表面鍍上一層鋁膜;在該鋁膜的上表面做氮化處理,即鋁膜與氨氣在高溫下反應形成複數個間隔設置的球形氮化鋁;繼續在該過渡層上生長磊晶層,該磊晶層包括依次生長的第一半導體層、發光層及第二半導體層;分別在第一半導體層與第二半導體層表面上形成第一電極與第二電極。
本發明藉由在第一半導體層與基板之間形成複數個間隔設置的球形氮化鋁,可提高發光層發出的朝向基板的光線經全反射向上出射的概率,從而提高發光二極體晶粒的出光效率。
100‧‧‧發光二極體晶粒
10‧‧‧基板
20‧‧‧緩衝層
30‧‧‧過渡層
40‧‧‧球形氮化鋁
50‧‧‧磊晶層
51‧‧‧第一半導體層
52‧‧‧發光層
53‧‧‧第二半導體層
531‧‧‧P型半導體電流阻擋層
532‧‧‧P型半導體電流接觸層
61‧‧‧第一電極
62‧‧‧第二電極
70‧‧‧鋁膜
圖1是本發明的發光二極體晶粒的示意圖。
圖2是本發明的發光二極體晶粒的製作方法步驟一與步驟二所提供的基板、緩衝層與過渡層的示意圖。
圖3是本發明的發光二極體晶粒的製作方法步驟三所得到的發光二極體晶粒的示意圖。
圖4是本發明的發光二極體晶粒的製作方法步驟三經氮化處理時的示意圖。
圖5是本發明的發光二極體晶粒的製作方法步驟四所得到的發光二極體晶粒的示意圖。
圖6是本發明的發光二極體晶粒的製作方法步驟五所得到的發光二極體晶粒的示意圖。
如圖1,本發明第一實施例提供的發光二極體晶粒100,其依次包括:基板10,形成於基板10上的緩衝層20,形成於緩衝層20上的過渡層30,形成於過渡層30上的複數個球形氮化鋁40,形成於過渡層30上且覆蓋該複數個球形氮化鋁40的磊晶層50。
基板10可由藍寶石(sapphire)、碳化矽(SiC)、矽(Si)、氮化鎵(GaN)等材料製成,本實施例中優選為藍寶石,以控制發光晶片的製造成本。
緩衝層20與過渡層30可藉由有機金屬化學氣相沉積法(Metal-Organic Chemical Vapor Deposition;MOCVD)、分子束磊晶法(Molecular Beam Epitaxy;MBE)或鹵化物化學氣相磊晶法(Hydride Vapor Phase Epitaxy;HVPE)等方式生長於基板10表面。由於緩衝層20與過渡層30是為了減少磊晶層50與球形氮化鋁40在生長過程中由於晶格不匹配所產生的缺陷而形成的,故其可由晶格常數與磊晶層50及球形氮化鋁40相匹配的材料製成。本實施例中,過渡層30可為未摻雜的氮化鎵,也可為N型氮化鎵。
複數個球形氮化鋁40自過渡層30的上表面向上延伸且間隔設置。
磊晶層50也可以藉由機金屬化學氣相沉積法(Metal-Organic Chemical Vapor Deposition;MOCVD)、分子束磊晶法(Molecular Beam Epitaxy;MBE)或鹵化物化學氣相磊晶法(Hydride Vapor Phase Epitaxy;HVPE)等方式生長於過渡層30表面,且磊晶層50完全覆蓋該複數個球形氮化鋁40。磊晶層50包括依次生長的第一半導體層51、發光層52及第二半導體層53。第一半導體層51的的部分表面裸露在外。第一半導體層51的電子與
第二半導體層53的空穴可在外加電場的激發下移動到發光層52複合,從而向外輻射出光子。本實施例中第一半導體層51優選為N型氮化鎵層,發光層52優選為多重量子井(muti-quantum well)氮化鎵層,第二半導體層53優選為P型氮化鎵層,且P型氮化鎵層包括自發光層52的上表面向上生長形成的P型半導體電流阻擋層531與自P型半導體電流阻擋層531上表面向上生長形成的P型半導體電流接觸層532。優選地,P型半導體電流阻擋層531可以由P型氮化鋁鎵(AlGaN)組成;P型半導體電流接觸層532可以由P型氮化鎵(GaN)組成。
發光二極體晶粒100還包括分別形成於外露的第一半導體層51的表面與第二半導體層53頂面上的第一電極61與第二電極62。第一電極61與第二電極62可利用真空蒸鍍或濺鍍的方法形成。為確保電流均勻地從第二電極62輸入第二半導體層53內部,在製作第二電極62之前還可在第二半導體層53頂面形成一透明導電層(圖未示)。該透明導電層可採用氧化銦錫(ITO)、鎳金合金(Ni/Au)等材料製作,優選採用氧化銦錫,以降低對出光造成的阻礙。
在第一半導體層51與基板10之間形成的複數個球形氮化鋁40可提高發光層52發出的朝向基板10的光線經全反射向上出射的概率,從而提高發光二極體晶粒100的出光效率。
以下,將結合其他附圖對本發明第二實施例提供的發光二極體晶粒100的製造方法進行詳細說明。
請參閱圖2,首先提供一基板10。基板10可由藍寶石(sapphire)、碳化矽(SiC)、矽(Si)、氮化鎵(GaN)等材料製成,本實施例中優選為藍寶石。
在基板10上依次磊晶形成緩衝層20與過渡層30。緩衝層20與過渡層30可藉由機金屬化學氣相沉積法(Metal-Organic Chemical Vapor Deposition;MOCVD)、分子束磊晶法(Molecular Beam Epitaxy;MBE)或鹵化物化學氣相磊晶法(Hydride Vapor Phase Epitaxy;HVPE)等方式生長於基板10表面。本實施例中,過渡層30可為未摻雜的氮化鎵,也可為N型氮化鎵。
請參閱圖3,在過渡層30的表面鍍上一層鋁膜70,本實施例中,鋁膜70是藉由蒸鍍的方式形成。
請參閱圖4與圖5,再次藉由金屬有機氣相沉積方法(Metal Organic Chemical Vapor Deposition,MOCVD)在鋁膜70的表面做氮化處理,即將溫度加熱到鋁的熔點(660度)時,鋁膜70因熱聚集而形成球形,此時在基板10的表面注入氨氣(NH3),氨氣(NH3)與鋁在高溫下反應形成氮化鋁(AlN)。如此,過渡層30的上表面隨機形成複數個球形氮化鋁40,於實施例中,球形氮化鋁40的直徑約為20-40nm。
請參閱圖6,再次藉由金屬有機氣相沉積方法(Metal Organic Chemical Vapor Deposition,MOCVD)、分子束磊晶法(Molecular Beam Epitaxy;MBE)或鹵化物化學氣相磊晶法(Hydride Vapor Phase Epitaxy;HVPE)等方式在基板10上繼續生長磊晶層50,且磊晶層50完全覆蓋該複數個球形氮化鋁40。磊晶層50包括依次生長的第一半導體層51、發光層52及第二半導體層53。發光層52與第二半導體層53位於第一半導體層51的頂端右側,從而使第一半導體層51的頂端左側外露。本實施例中第一半導體層51優選為一N型氮化鎵層,發光層52優選為多重量子井
(muti-quantum well)氮化鎵層,第二半導體層53優選為P型氮化鎵層,且P型氮化鎵層包括自發光層52的上表面向上生長形成的P型半導體電流阻擋層531與自P型半導體電流阻擋層531上表面向上生長形成的P型半導體電流接觸層532。優選地,P型半導體電流阻擋層531可以由P型氮化鋁鎵(AlGaN)組成;P型半導體電流接觸層532可以由P型氮化鎵(GaN)組成。
請再次參閱圖1,分別在外露的第一半導體層51的表面與第二半導體層53頂面上形成第一電極61與第二電極62。第一電極61與第二電極62可利用真空蒸鍍或濺鍍的方法形成。第一電極61與第二電極62的製作材料可以是鈦(Ti)、鋁(Al)、銀(Ag)、鎳(Ni)、鎢(W)、銅(Cu)、鈀(Pd)、鉻(Cr)與金(Au)任意之一或者其合金。為確保電流均勻地從第二電極62輸入第二半導體層53內部,在製作第二電極62之前還可在第二半導體層53頂面形成一透明導電層(圖未示)。該透明導電層可採用氧化銦錫(ITO)、鎳金合金(Ni/Au)等材料製作,優選採用氧化銦錫,以降低對出光造成的阻礙。
當在第一電極61與第二電極62兩端施加正向電壓時,P型半導體電流接觸層532中的空穴與第一半導體層51中的電子將在電場的作用下在發光層52中複合,能量以光線的形式釋放。發光層52發出的朝向基板10的光線傳輸到球形氮化鋁40時,由於球形氮化鋁40的表面呈傾斜形狀,其增大了光線在第一半導體層51的入射角。故,發光層52所發出的光線射到球形氮化鋁40的表面時發生全反射,然後反轉向上,從P型半導體電流接觸層532的表面出射。也就是,位於第一半導體層51與基板10之間的球形氮化鋁40可提
高發光層52發出的朝向基板10的光線經全反射向上出射的概率,從而提高發光二極體晶粒100的出光效率。
本發明藉由在第一半導體層51與基板10之間形成的球形氮化鋁40,可提高發光層52發出的朝向基板10的光線經全反射向上出射的概率,從而提高發光二極體晶粒100的出光效率。
綜上所述,本發明符合發明專利要件,爰依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,舉凡熟悉本案技藝之人士,爰依本發明精神所作之等效修飾或變化,皆應涵蓋於以下之申請專利範圍內。
100‧‧‧發光二極體晶粒
10‧‧‧基板
20‧‧‧緩衝層
30‧‧‧過渡層
40‧‧‧球形氮化鋁
50‧‧‧磊晶層
51‧‧‧第一半導體層
52‧‧‧發光層
53‧‧‧第二半導體層
531‧‧‧P型半導體電流阻擋層
532‧‧‧P型半導體電流接觸層
61‧‧‧第一電極
62‧‧‧第二電極
Claims (3)
- 一種發光二極體晶粒的製作方法,其包括以下步驟:提供一基板,該基板由藍寶石、碳化矽、矽或氮化鎵製成;在基板上依次磊晶形成緩衝層與過渡層;在過渡層表面鍍上一層鋁膜;在該鋁膜的上表面做氮化處理,即鋁膜與氨氣在高溫下反應形成複數個間隔設置的球形氮化鋁;繼續在該過渡層上生長磊晶層,該磊晶層包括依次生長的第一半導體層、發光層及第二半導體層;分別在第一半導體層與第二半導體層表面上形成第一電極與第二電極。
- 如申請專利範圍第1項所述的發光二極體晶粒的製作方法,該基板由藍寶石、矽、碳化矽或氮化鎵製成。
- 如申請專利範圍第1項所述的發光二極體晶粒的製作方法,該第一半導體層為N型半導體層,第二半導體層為P型半導體層。
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