CN102916098A - 发光二极管晶粒及其制作方法 - Google Patents
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Abstract
一种发光二极管晶粒,其包括:基板;形成在所述基板上的磊晶层,该磊晶层包括依次生长的第一半导体层、发光层及第二半导体层;在该磊晶层与该基板之间的若干间隔设置的球形氮化铝,该第一半导体层完全覆盖该若干球形氮化铝。本发明通过在第一半导体层与基板之间形成若干间隔设置的球形氮化铝,可提高发光层发出的朝向基板的光线经全反射向上出射的几率,从而提高发光二极管晶粒的出光效率。
Description
技术领域
本发明涉及一种发光二极管晶粒及其制作方法,尤其涉及一种具有高出光效率的发光二极管晶粒及其制作方法。
背景技术
发光二极管(Light Emitting Diode,LED)是一种可将电流转换成特定波长范围的光的半导体元件。发光二极管以其亮度高、工作电压低、功耗小、易与集成电路匹配、驱动简单、寿命长等优点,从而可作为光源而广泛应用于照明领域。
现有的发光二极管晶粒通常包括基板以及在基板表面生长的半导体发光结构。然而上述结构存在以下问题:半导体发光结构所发出的朝向基板一侧的光线在进入基板后,会被基板所吸收,从而降低发光二极管晶粒的出光效率。
发明内容
鉴于此,有必要提供一种具有较高出光效率的发光二极管晶粒及其制作方法。
一种发光二极管晶粒,其包括:基板;形成在所述基板上的磊晶层,该磊晶层包括依次生长的第一半导体层、发光层及第二半导体层;在该磊晶层与该基板之间的若干间隔设置的球形氮化铝,该第一半导体层完全覆盖该若干球形氮化铝。
一种发光二极管晶粒的制作方法,其包括以下步骤:提供一基板,该基板由蓝宝石、碳化硅、硅或氮化镓等材料制成;在基板上依次磊晶形成缓冲层和过渡层;在过渡层表面镀上一层铝膜;在该铝膜的上表面做氮化处理,即铝膜和氨气在高温下反应形成多个间隔设置的球形氮化铝;继续在该过渡层上生长磊晶层,该磊晶层包括依次生长的第一半导体层、发光层及第二半导体层;分别在第一半导体层和第二半导体层表面上形成第一电极和第二电极。
本发明通过在第一半导体层与基板之间形成若干间隔设置的球形氮化铝,可提高发光层发出的朝向基板的光线经全反射向上出射的几率,从而提高发光二极管晶粒的出光效率。
附图说明
图1是本发明的发光二极管晶粒的示意图。
图2是本发明的发光二极管晶粒的制作方法步骤一和步骤二所提供的基板、缓冲层和过渡层的示意图。
图3是本发明的发光二极管晶粒的制作方法步骤三所得到的发光二极管晶粒的示意图。
图4是本发明的发光二极管晶粒的制作方法步骤三经氮化处理时的示意图。
图5是本发明的发光二极管晶粒的制作方法步骤四所得到的发光二极管晶粒的示意图。
图6是本发明的发光二极管晶粒的制作方法步骤五所得到的发光二极管晶粒的示意图。
主要元件符号说明
发光二极管晶粒 | 100 |
基板 | 10 |
缓冲层 | 20 |
过渡层 | 30 |
球形氮化铝 | 40 |
磊晶层 | 50 |
第一半导体层 | 51 |
发光层 | 52 |
第二半导体层 | 53 |
P型半导体电流阻挡层 | 531 |
P型半导体电流接触层 | 532 |
第一电极 | 61 |
第二电极 | 62 |
铝膜 | 70 |
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
如图1,本发明第一实施例提供的发光二极管晶粒100,其依次包括:基板10,形成在基板10上的缓冲层20,形成在缓冲层20上的过渡层30,形成在过渡层30上的若干球形氮化铝40,形成在过渡层30上且覆盖该若干球形氮化铝40的磊晶层50。
基板10可由蓝宝石(sapphire)、碳化硅(SiC)、硅(Si)、氮化镓(GaN)等材料制成,本实施例中优选为蓝宝石,以控制发光芯片的制造成本。
缓冲层20和过渡层30可通过有机金属化学气相沉积法(Metal-Organic Chemical Vapor Deposition; MOCVD)、分子束磊晶法(Molecular Beam Epitaxy; MBE)或卤化物化学气相磊晶法(Hydride Vapor Phase Epitaxy; HVPE)等方式生长于基板10表面。由于缓冲层20和过渡层30是为了减少磊晶层50和球形氮化铝40在生长过程中由于晶格不匹配所产生的缺陷而形成的,因此其可由晶格常数与磊晶层50和球形氮化铝40相匹配的材料制成。本实施例中,过渡层30可为未掺杂的氮化镓,也可为N型氮化镓。
若干球形氮化铝40自过渡层30的上表面向上延伸且间隔设置。
磊晶层50也可以通过机金属化学气相沉积法(Metal-Organic Chemical Vapor Deposition; MOCVD)、分子束磊晶法(Molecular Beam Epitaxy; MBE)或卤化物化学气相磊晶法(Hydride Vapor Phase Epitaxy; HVPE)等方式生长于过渡层30表面,且磊晶层50完全覆盖该若干球形氮化铝40。磊晶层50包括依次生长的第一半导体层51、发光层52及第二半导体层53。第一半导体层51的的部分表面裸露在外。第一半导体层51的电子与第二半导体层53的空穴可在外加电场的激发下移动到发光层52复合,从而向外辐射出光子。本实施例中第一半导体层51优选为N型氮化镓层,发光层52优选为多重量子井(muti-quantum well)氮化镓层,第二半导体层53优选为P型氮化镓层,且P型氮化镓层包括自发光层52的上表面向上生长形成的P型半导体电流阻挡层531和自P型半导体电流阻挡层531上表面向上生长形成的P型半导体电流接触层532。优选地,P型半导体电流阻挡层531可以由P型氮化铝镓(AlGaN)组成;P型半导体电流接触层532可以由P型氮化镓(GaN)组成。
发光二极管晶粒100还包括分别形成在外露的第一半导体层51的表面和第二半导体层53顶面上的第一电极61和第二电极62。第一电极61和第二电极62可利用真空蒸镀或溅镀的方法形成。为确保电流均匀地从第二电极62输入第二半导体层53内部,在制作第二电极62之前还可在第二半导体层53顶面形成一透明导电层(图未示)。该透明导电层可采用氧化铟锡(ITO)、镍金合金(Ni/Au)等材料制作,优选采用氧化铟锡,以降低对出光造成的阻碍。
在第一半导体层51与基板10之间形成的若干球形氮化铝40可提高发光层52发出的朝向基板10的光线经全反射向上出射的几率,从而提高发光二极管晶粒100的出光效率。
以下,将结合其他附图对本发明第二实施例提供的发光二极管晶粒100的制造方法进行详细说明。
请参阅图2,首先提供一基板10。基板10可由蓝宝石(sapphire)、碳化硅(SiC)、硅(Si)、氮化镓(GaN)等材料制成,本实施例中优选为蓝宝石。
在基板10上依次磊晶形成缓冲层20和过渡层30。缓冲层20和过渡层30可通过机金属化学气相沉积法(Metal-Organic Chemical Vapor Deposition; MOCVD)、分子束磊晶法(Molecular Beam Epitaxy; MBE)或卤化物化学气相磊晶法(Hydride Vapor Phase Epitaxy; HVPE)等方式生长于基板10表面。本实施例中,过渡层30可为未掺杂的氮化镓,也可为N型氮化镓。
请参阅图3,在过渡层30的表面镀上一层铝膜70,本实施例中,铝膜70是采用蒸镀的方式形成。
请参阅图4和图5,再次采用金属有机气相沉积方法(Metal Organic Chemical Vapor Deposition,MOCVD)在铝膜70的表面做氮化处理,即将温度加热到铝的熔点(660度)时,铝膜70因热聚集而形成球形,此时在基板10的表面注入氨气(NH3),氨气(NH3)与铝在高温下反应形成氮化铝(AlN)。如此,过渡层30的上表面随机形成若干球形氮化铝40,于实施例中,球形氮化铝40的直径约为20-40nm。
请参阅图6,再次采用金属有机气相沉积方法(Metal Organic Chemical Vapor Deposition,MOCVD)、分子束磊晶法(Molecular Beam Epitaxy; MBE)或卤化物化学气相磊晶法(Hydride Vapor Phase Epitaxy; HVPE)等方式在基板10上继续生长磊晶层50,且磊晶层50完全覆盖该若干球形氮化铝40。磊晶层50包括依次生长的第一半导体层51、发光层52及第二半导体层53。发光层52和第二半导体层53位于第一半导体层51的顶端右侧,从而使第一半导体层51的顶端左侧外露。本实施例中第一半导体层51优选为一N型氮化镓层,发光层52优选为多重量子井(muti-quantum well)氮化镓层,第二半导体层53优选为P型氮化镓层,且P型氮化镓层包括自发光层52的上表面向上生长形成的P型半导体电流阻挡层531和自P型半导体电流阻挡层531上表面向上生长形成的P型半导体电流接触层532。优选地,P型半导体电流阻挡层531可以由P型氮化铝镓(AlGaN)组成;P型半导体电流接触层532可以由P型氮化镓(GaN)组成。
请再次参阅图1,分别在外露的第一半导体层51的表面和第二半导体层53顶面上形成第一电极61和第二电极62。第一电极61和第二电极62可利用真空蒸镀或溅镀的方法形成。第一电极61和第二电极62的制作材料可以是钛(Ti)、铝(Al)、银(Ag)、镍(Ni)、钨(W)、铜(Cu)、钯(Pd)、铬(Cr)和金(Au)任意之一或者其合金。为确保电流均匀地从第二电极62输入第二半导体层53内部,在制作第二电极62之前还可在第二半导体层53顶面形成一透明导电层(图未示)。该透明导电层可采用氧化铟锡(ITO)、镍金合金(Ni/Au)等材料制作,优选采用氧化铟锡,以降低对出光造成的阻碍。
当在第一电极61和第二电极62两端施加正向电压时,P型半导体电流接触层532中的空穴和第一半导体层51中的电子将在电场的作用下在发光层52中复合,能量以光线的形式释放。发光层52发出的朝向基板10的光线传输到球形氮化铝40时,由于球形氮化铝40的表面呈倾斜形状,其增大了光线在第一半导体层51的入射角。因此,发光层52所发出的光线射到球形氮化铝40的表面时发生全反射,然后反转向上,从P型半导体电流接触层532的表面出射。也就是,位于第一半导体层51与基板10之间的球形氮化铝40可提高发光层52发出的朝向基板10的光线经全反射向上出射的几率,从而提高发光二极管晶粒100的出光效率。
本发明通过在第一半导体层51与基板10之间形成的球形氮化铝40,可提高发光层52发出的朝向基板10的光线经全反射向上出射的几率,从而提高发光二极管晶粒100的出光效率。
应该指出,上述实施方式仅为本发明的较佳实施方式,本领域技术人员还可在本发明精神内做其它变化。这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。
Claims (10)
1.一种发光二极管晶粒,其包括:
基板;
形成在所述基板上的磊晶层,该磊晶层包括依次生长的第一半导体层、发光层及第二半导体层;
在该磊晶层与该基板之间的若干间隔设置的球形氮化铝,该第一半导体层完全覆盖该若干球形氮化铝。
2.如权利要求1所述的发光二极管晶粒,其特征在于,还包括形成在该基板上的缓冲层和形成在缓冲层上的过渡层,该若干球形氮化铝形成在过渡层的上表面。
3.如权利要求2所述的发光二极管晶粒,其特征在于,该基板由蓝宝石,碳化硅,硅或氮化镓制成。
4.如权利要求3所述的发光二极管晶粒,其特征在于,该过渡层为未掺杂的氮化镓或N型氮化镓材料制成。
5.如权利要求1所述的发光二极管晶粒,其特征在于,该磊晶层是通过有机金属化学气相沉积法、分子束磊晶法或卤化物化学气相磊晶法生长而成的。
6.如权利要求1所述的发光二极管晶粒,其特征在于,该第一半导体层为N型半导体层,第二半导体层为P型半导体层。
7.如权利要求1所述的发光二极管晶粒,其特征在于,还包括分别形成在第一半导体层和第二半导体层表面上的第一电极和第二电极。
8.一种发光二极管晶粒的制作方法,其包括以下步骤:
提供一基板,该基板由蓝宝石、碳化硅、硅或氮化镓制成;
在基板上依次磊晶形成缓冲层和过渡层;
在过渡层表面镀上一层铝膜;
在该铝膜的上表面做氮化处理,即铝膜和氨气在高温下反应形成多个间隔设置的球形氮化铝;
继续在该过渡层上生长磊晶层,该磊晶层包括依次生长的第一半导体层、发光层及第二半导体层;
分别在第一半导体层和第二半导体层表面上形成第一电极和第二电极。
9.如权利要求8所述的发光二极管晶粒的制作方法,其特征在于,该基板由蓝宝石、硅、碳化硅或氮化镓制成。
10.如权利要求8所述的发光二极管晶粒的制作方法,其特征在于,该第一半导体层为N型半导体层,第二半导体层为P型半导体层。
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CN105742435A (zh) * | 2016-04-20 | 2016-07-06 | 安徽三安光电有限公司 | 一种发光二极管及其制备方法 |
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US8933434B2 (en) | 2013-05-20 | 2015-01-13 | International Business Machines Company | Elemental semiconductor material contact for GaN-based light emitting diodes |
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US8877525B1 (en) | 2013-07-25 | 2014-11-04 | International Business Machines Corporation | Low cost secure chip identification |
JP2015072751A (ja) * | 2013-10-01 | 2015-04-16 | 株式会社ジャパンディスプレイ | 有機el表示装置 |
US10177247B2 (en) * | 2017-01-20 | 2019-01-08 | Qorvo Us, Inc. | Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfaces |
JP6783990B2 (ja) * | 2017-09-07 | 2020-11-11 | 豊田合成株式会社 | Iii族窒化物半導体素子の製造方法および基板の製造方法 |
CN115799420B (zh) * | 2023-01-06 | 2023-05-16 | 华灿光电(苏州)有限公司 | 改善转移精度的发光二极管及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020014629A1 (en) * | 2000-06-23 | 2002-02-07 | Naoki Shibata | Group III nitride compound semiconductor device and method for producing the same |
US20070241352A1 (en) * | 2004-06-18 | 2007-10-18 | Showa Denko K. K. | Group III Nitride Semiconductor Light Emitting Device |
CN101103438A (zh) * | 2005-01-11 | 2008-01-09 | 美商旭明国际股份有限公司 | 垂直发光二极管的制造方法 |
US20090127583A1 (en) * | 2005-08-08 | 2009-05-21 | Showa Denko K.K. | Semiconductor device and method of manufacturing the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6531719B2 (en) * | 1999-09-29 | 2003-03-11 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
KR100831843B1 (ko) * | 2006-11-07 | 2008-05-22 | 주식회사 실트론 | 금속층 위에 성장된 화합물 반도체 기판, 그 제조 방법 및이를 이용한 화합물 반도체 소자 |
-
2011
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020014629A1 (en) * | 2000-06-23 | 2002-02-07 | Naoki Shibata | Group III nitride compound semiconductor device and method for producing the same |
US20070241352A1 (en) * | 2004-06-18 | 2007-10-18 | Showa Denko K. K. | Group III Nitride Semiconductor Light Emitting Device |
CN101103438A (zh) * | 2005-01-11 | 2008-01-09 | 美商旭明国际股份有限公司 | 垂直发光二极管的制造方法 |
US20090127583A1 (en) * | 2005-08-08 | 2009-05-21 | Showa Denko K.K. | Semiconductor device and method of manufacturing the same |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105742435A (zh) * | 2016-04-20 | 2016-07-06 | 安徽三安光电有限公司 | 一种发光二极管及其制备方法 |
CN105742435B (zh) * | 2016-04-20 | 2018-01-19 | 安徽三安光电有限公司 | 一种发光二极管及其制备方法 |
CN107833944A (zh) * | 2017-11-13 | 2018-03-23 | 湘能华磊光电股份有限公司 | 一种led外延层结构及其生长方法 |
CN107833944B (zh) * | 2017-11-13 | 2019-06-14 | 湘能华磊光电股份有限公司 | 一种led外延层结构及其生长方法 |
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