CN102157650B - 一种垂直结构的GaN基发光二极管的制备方法 - Google Patents
一种垂直结构的GaN基发光二极管的制备方法 Download PDFInfo
- Publication number
- CN102157650B CN102157650B CN 201110033849 CN201110033849A CN102157650B CN 102157650 B CN102157650 B CN 102157650B CN 201110033849 CN201110033849 CN 201110033849 CN 201110033849 A CN201110033849 A CN 201110033849A CN 102157650 B CN102157650 B CN 102157650B
- Authority
- CN
- China
- Prior art keywords
- gan
- substrate
- epitaxial loayer
- chun
- resilient coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 10
- 239000010980 sapphire Substances 0.000 claims abstract description 10
- 230000004927 fusion Effects 0.000 claims abstract description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 40
- 239000011248 coating agent Substances 0.000 claims description 38
- 238000000576 coating method Methods 0.000 claims description 38
- 229910021529 ammonia Inorganic materials 0.000 claims description 20
- 238000013517 stratification Methods 0.000 claims description 15
- 230000008020 evaporation Effects 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 7
- 238000005260 corrosion Methods 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 4
- 229910002601 GaN Inorganic materials 0.000 abstract 6
- 239000002131 composite material Substances 0.000 abstract 2
- 239000011777 magnesium Substances 0.000 description 28
- 230000012010 growth Effects 0.000 description 23
- 239000011701 zinc Substances 0.000 description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 12
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 229910052749 magnesium Inorganic materials 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 6
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000005477 sputtering target Methods 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 238000010792 warming Methods 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910003363 ZnMgO Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005219 brazing Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110033849 CN102157650B (zh) | 2011-01-31 | 2011-01-31 | 一种垂直结构的GaN基发光二极管的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110033849 CN102157650B (zh) | 2011-01-31 | 2011-01-31 | 一种垂直结构的GaN基发光二极管的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102157650A CN102157650A (zh) | 2011-08-17 |
CN102157650B true CN102157650B (zh) | 2013-06-12 |
Family
ID=44438969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201110033849 Expired - Fee Related CN102157650B (zh) | 2011-01-31 | 2011-01-31 | 一种垂直结构的GaN基发光二极管的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102157650B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201446995A (zh) * | 2013-06-13 | 2014-12-16 | Dong-Hau Kuo | 一種薄膜濺鍍技術可製作p型GaN為主的III-nitride半導體薄膜 |
CN106299041A (zh) * | 2016-08-29 | 2017-01-04 | 华南理工大学 | 生长在r面蓝宝石衬底上的非极性LED外延片的制备方法及应用 |
CN108346728A (zh) * | 2017-12-30 | 2018-07-31 | 河源市众拓光电科技有限公司 | 一种高光提取效率的垂直结构led芯片及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020095769A (ko) * | 2001-06-15 | 2002-12-28 | 퀀테코주식회사 | 플라즈마 처리에 의한 양자우물구조 질화갈륨계 발광소자및 그 제조방법 |
CN1716653A (zh) * | 2005-06-09 | 2006-01-04 | 大连理工大学 | ZnO-GaN复合衬底GaN发光器件及其制备方法 |
CN101546799A (zh) * | 2008-03-26 | 2009-09-30 | 中国科学院半导体研究所 | 一种垂直结构氮化物led的制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050151136A1 (en) * | 2004-01-08 | 2005-07-14 | Heng Liu | Light emitting diode having conductive substrate and transparent emitting surface |
-
2011
- 2011-01-31 CN CN 201110033849 patent/CN102157650B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020095769A (ko) * | 2001-06-15 | 2002-12-28 | 퀀테코주식회사 | 플라즈마 처리에 의한 양자우물구조 질화갈륨계 발광소자및 그 제조방법 |
CN1716653A (zh) * | 2005-06-09 | 2006-01-04 | 大连理工大学 | ZnO-GaN复合衬底GaN发光器件及其制备方法 |
CN101546799A (zh) * | 2008-03-26 | 2009-09-30 | 中国科学院半导体研究所 | 一种垂直结构氮化物led的制备方法 |
Non-Patent Citations (2)
Title |
---|
BHUBESH CHANDER JOSHI等.Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications.《Indian Academy of Sciences》.2010,第74卷(第1期),135-141. * |
Quan-Bao Ma等.Effects of Mg doping on the properties of highly transparent conductive and near infrared reflective Zn1-xMgxO:Ga films.《Journal of Solid State Chemistry》.2008,第181卷525-529. * |
Also Published As
Publication number | Publication date |
---|---|
CN102157650A (zh) | 2011-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102097548B (zh) | 一种自支撑GaN基发光二极管的制备方法 | |
JP7167330B2 (ja) | 光取出し効率を向上させるための紫外ledチップ及びその製造方法 | |
CN106784224B (zh) | 生长在玻璃衬底上的led外延片及其制备方法 | |
US7868348B2 (en) | Light emitting device having vertical structure and method for manufacturing the same | |
CN111739989A (zh) | AlGaN基深紫外LED外延片及制备方法 | |
CN102916098A (zh) | 发光二极管晶粒及其制作方法 | |
CN103258926A (zh) | 一种led垂直芯片结构及制作方法 | |
CN103996764B (zh) | 生长在Ag衬底的LED外延片及其制备方法和应用 | |
CN103996611B (zh) | 一种生长在金属Al衬底上的GaN薄膜及其制备方法和应用 | |
CN102157650B (zh) | 一种垂直结构的GaN基发光二极管的制备方法 | |
CN203950831U (zh) | 生长在Cu衬底的LED外延片 | |
CN107731971B (zh) | 一种基于光子晶体的垂直结构led芯片及其制备方法 | |
CN110718615B (zh) | 一种复合窗口层结构AlGaInP基红光LED及其制备方法 | |
CN103996758A (zh) | 生长在Cu衬底的LED外延片及其制备方法和应用 | |
CN206422089U (zh) | 生长在玻璃衬底上的GaN薄膜 | |
CN104157756A (zh) | 生长在Zr衬底上的LED外延片及其制备方法 | |
CN203895486U (zh) | 生长在Ag衬底上的LED外延片 | |
CN203895485U (zh) | 一种生长在金属Al衬底上的LED外延片 | |
CN203983319U (zh) | 生长在w衬底上的led外延片 | |
CN204067413U (zh) | 生长在W衬底上的InGaN/GaN多量子阱 | |
CN204067412U (zh) | 生长在W衬底上的AlN薄膜 | |
CN104157754B (zh) | 生长在W衬底上的InGaN/GaN多量子阱及其制备方法 | |
CN204130574U (zh) | 一种生长在金属Al衬底上的GaN薄膜 | |
CN203983321U (zh) | 生长在Zr衬底上的LED外延片 | |
CN106601887B (zh) | 生长在玻璃衬底上的GaN薄膜及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20110817 Assignee: Hangzhou Silan Azure Co., Ltd. Assignor: Zhejiang University Contract record no.: 2016330000059 Denomination of invention: Method for manufacturing gallium nitride (GaN)-based light-emitting diode (LED) with vertical structure Granted publication date: 20130612 License type: Common License Record date: 20160330 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20110817 Assignee: HC SemiTek Corporation Assignor: Zhejiang University Contract record no.: 2016330000071 Denomination of invention: Method for manufacturing gallium nitride (GaN)-based light-emitting diode (LED) with vertical structure Granted publication date: 20130612 License type: Common License Record date: 20160425 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130612 Termination date: 20210131 |