TWI443747B - 半導體裝置製造方法以及基板處理方法及設備 - Google Patents

半導體裝置製造方法以及基板處理方法及設備 Download PDF

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Publication number
TWI443747B
TWI443747B TW100106184A TW100106184A TWI443747B TW I443747 B TWI443747 B TW I443747B TW 100106184 A TW100106184 A TW 100106184A TW 100106184 A TW100106184 A TW 100106184A TW I443747 B TWI443747 B TW I443747B
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TW
Taiwan
Prior art keywords
film
gas
process chamber
oxidized
germanium film
Prior art date
Application number
TW100106184A
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English (en)
Chinese (zh)
Other versions
TW201142949A (en
Inventor
王杰
笠原修
湯浅和宏
西田圭吾
Original Assignee
日立國際電氣股份有限公司
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Publication of TW201142949A publication Critical patent/TW201142949A/zh
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Publication of TWI443747B publication Critical patent/TWI443747B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
TW100106184A 2010-02-24 2011-02-24 半導體裝置製造方法以及基板處理方法及設備 TWI443747B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010038599A JP5495847B2 (ja) 2010-02-24 2010-02-24 半導体装置の製造方法、基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
TW201142949A TW201142949A (en) 2011-12-01
TWI443747B true TWI443747B (zh) 2014-07-01

Family

ID=44476865

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100106184A TWI443747B (zh) 2010-02-24 2011-02-24 半導體裝置製造方法以及基板處理方法及設備

Country Status (5)

Country Link
US (1) US20110207302A1 (enExample)
JP (1) JP5495847B2 (enExample)
KR (1) KR101233031B1 (enExample)
CN (1) CN102194660A (enExample)
TW (1) TWI443747B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5373143B2 (ja) * 2010-04-27 2013-12-18 東京エレクトロン株式会社 半導体装置の製造方法並びにコンタクトホール及び／又はラインの埋め込み方法
JP4967066B2 (ja) * 2010-04-27 2012-07-04 東京エレクトロン株式会社 アモルファスシリコン膜の成膜方法および成膜装置
KR20110122523A (ko) * 2010-05-04 2011-11-10 삼성전자주식회사 반도체 메모리 소자 및 그의 형성방법
JP5544343B2 (ja) * 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
JP5741382B2 (ja) * 2011-09-30 2015-07-01 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置
JP5774439B2 (ja) * 2011-10-14 2015-09-09 株式会社日本製鋼所 レーザ処理装置
JP5829196B2 (ja) * 2011-10-28 2015-12-09 東京エレクトロン株式会社 シリコン酸化物膜の成膜方法
JP6022272B2 (ja) * 2012-09-14 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP5947710B2 (ja) * 2012-12-27 2016-07-06 東京エレクトロン株式会社 シード層の形成方法、シリコン膜の成膜方法および成膜装置
JP2015070233A (ja) 2013-09-30 2015-04-13 株式会社東芝 半導体装置の製造方法
CN104701064B (zh) * 2015-03-26 2015-12-09 江苏现代电力科技股份有限公司 基于柔性分合闸技术的智能集成中压交流真空开关设备
JP6078604B2 (ja) * 2015-09-24 2017-02-08 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびガス供給系
JP7058575B2 (ja) * 2018-09-12 2022-04-22 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
KR102601038B1 (ko) 2020-07-07 2023-11-09 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
US12568781B2 (en) 2021-01-25 2026-03-03 Lam Research Corporation Selective silicon trim by thermal etching
CN115332128A (zh) * 2022-10-14 2022-11-11 西安奕斯伟材料科技有限公司 晶圆载具管理系统及方法

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Publication number Priority date Publication date Assignee Title
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
JP2845303B2 (ja) * 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
JPH06342763A (ja) * 1993-05-31 1994-12-13 Sanyo Electric Co Ltd 多結晶半導体膜の形成方法
JPH07162002A (ja) * 1993-12-06 1995-06-23 Sharp Corp 半導体膜の製造方法及び薄膜トランジスタの製造方法
US6159866A (en) * 1998-03-02 2000-12-12 Applied Materials, Inc. Method for insitu vapor generation for forming an oxide on a substrate
JP2000021781A (ja) * 1998-06-29 2000-01-21 Toshiba Corp 半導体装置の製造方法
JP4019584B2 (ja) * 1999-12-27 2007-12-12 株式会社Ｉｈｉ 半導体膜の形成方法
JP2002110997A (ja) * 2000-09-29 2002-04-12 Toshiba Corp 多結晶薄膜トランジスタの製造方法
JP4456533B2 (ja) * 2005-06-14 2010-04-28 東京エレクトロン株式会社 シリコン酸化膜の形成方法、シリコン酸化膜の形成装置及びプログラム
JP5023004B2 (ja) * 2008-06-30 2012-09-12 株式会社日立国際電気 基板処理方法及び基板処理装置

Also Published As

Publication number Publication date
KR20110097709A (ko) 2011-08-31
US20110207302A1 (en) 2011-08-25
JP2011176095A (ja) 2011-09-08
CN102194660A (zh) 2011-09-21
KR101233031B1 (ko) 2013-02-13
TW201142949A (en) 2011-12-01
JP5495847B2 (ja) 2014-05-21

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