TWI442481B - 顯示裝置的製造方法 - Google Patents

顯示裝置的製造方法 Download PDF

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Publication number
TWI442481B
TWI442481B TW097140305A TW97140305A TWI442481B TW I442481 B TWI442481 B TW I442481B TW 097140305 A TW097140305 A TW 097140305A TW 97140305 A TW97140305 A TW 97140305A TW I442481 B TWI442481 B TW I442481B
Authority
TW
Taiwan
Prior art keywords
layer
film
mask
light
wiring layer
Prior art date
Application number
TW097140305A
Other languages
English (en)
Chinese (zh)
Other versions
TW200933751A (en
Inventor
細谷邦雄
藤川最史
千葉陽子
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW200933751A publication Critical patent/TW200933751A/zh
Application granted granted Critical
Publication of TWI442481B publication Critical patent/TWI442481B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Recrystallisation Techniques (AREA)
TW097140305A 2007-10-23 2008-10-21 顯示裝置的製造方法 TWI442481B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007275786 2007-10-23

Publications (2)

Publication Number Publication Date
TW200933751A TW200933751A (en) 2009-08-01
TWI442481B true TWI442481B (zh) 2014-06-21

Family

ID=40563880

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097140305A TWI442481B (zh) 2007-10-23 2008-10-21 顯示裝置的製造方法

Country Status (4)

Country Link
US (1) US7824939B2 (enExample)
JP (1) JP5367338B2 (enExample)
CN (1) CN101419946B (enExample)
TW (1) TWI442481B (enExample)

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KR101448903B1 (ko) 2007-10-23 2014-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제작방법
JP5357493B2 (ja) * 2007-10-23 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5380037B2 (ja) 2007-10-23 2014-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101446249B1 (ko) 2007-12-03 2014-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
KR101455308B1 (ko) * 2007-12-03 2014-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터의 제작 방법 및 표시 장치의 제작 방법
US8101442B2 (en) * 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
TWI655780B (zh) * 2008-11-07 2019-04-01 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
JP5503995B2 (ja) * 2009-02-13 2014-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101785992B1 (ko) 2009-07-24 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5642447B2 (ja) 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
TWI907190B (zh) 2009-08-07 2025-12-01 日商半導體能源研究所股份有限公司 半導體裝置
KR102009305B1 (ko) 2009-11-06 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN102640292B (zh) 2009-11-27 2015-11-25 株式会社半导体能源研究所 半导体装置和及其制造方法
KR101866734B1 (ko) 2009-12-25 2018-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6122275B2 (ja) * 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 表示装置
CN102707575B (zh) * 2012-05-18 2015-02-25 北京京东方光电科技有限公司 掩模板及制造阵列基板的方法
JP6300589B2 (ja) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN106298523B (zh) * 2015-05-22 2019-12-17 鸿富锦精密工业（深圳）有限公司 薄膜晶体管、薄膜晶体管的制造方法及阵列基板的制造方法
CN111007686A (zh) * 2019-11-14 2020-04-14 Tcl华星光电技术有限公司 阵列基板、显示面板及制备方法
CN114284141B (zh) * 2020-09-27 2025-08-15 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法

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JP2006302679A (ja) * 2005-04-21 2006-11-02 Seiko Epson Corp 導電膜の形成方法、及び電子機器の製造方法
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US7608490B2 (en) * 2005-06-02 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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KR101201017B1 (ko) * 2005-06-27 2012-11-13 엘지디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
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US7867791B2 (en) * 2005-07-29 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device using multiple mask layers formed through use of an exposure mask that transmits light at a plurality of intensities
US7914971B2 (en) * 2005-08-12 2011-03-29 Semiconductor Energy Laboratory Co., Ltd. Light exposure mask and method for manufacturing semiconductor device using the same
JP5105811B2 (ja) 2005-10-14 2012-12-26 株式会社半導体エネルギー研究所 表示装置
US8149346B2 (en) * 2005-10-14 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
TWI460851B (zh) * 2005-10-17 2014-11-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101219046B1 (ko) * 2005-11-17 2013-01-08 삼성디스플레이 주식회사 표시장치와 이의 제조방법
US7821613B2 (en) * 2005-12-28 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
TWI400758B (zh) * 2005-12-28 2013-07-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR20070070718A (ko) * 2005-12-29 2007-07-04 엘지.필립스 엘시디 주식회사 박막 트랜지스터 기판의 제조방법
TWI322288B (en) * 2006-03-07 2010-03-21 Au Optronics Corp Manufacture method of pixel array substrate

Also Published As

Publication number Publication date
CN101419946B (zh) 2013-05-01
US7824939B2 (en) 2010-11-02
JP2009124124A (ja) 2009-06-04
JP5367338B2 (ja) 2013-12-11
CN101419946A (zh) 2009-04-29
TW200933751A (en) 2009-08-01
US20090104723A1 (en) 2009-04-23

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