TWI434383B - 電性連接墊結構及包含有複數個電性連接墊結構的積體電路 - Google Patents
電性連接墊結構及包含有複數個電性連接墊結構的積體電路 Download PDFInfo
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- TWI434383B TWI434383B TW099143454A TW99143454A TWI434383B TW I434383 B TWI434383 B TW I434383B TW 099143454 A TW099143454 A TW 099143454A TW 99143454 A TW99143454 A TW 99143454A TW I434383 B TWI434383 B TW I434383B
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- connection pad
- electrical connection
- insulating layer
- integrated circuit
- opening
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- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
Description
本發明係有關於一種電性連接墊結構,尤指一種設置於一積體電路上且應用於玻璃覆晶(Chip on Glass,COG)以及薄膜覆晶(Chip on Film,COF)封裝中的一種電性連接墊結構。
請參考第1圖,第1圖為一玻璃覆晶結構100的示意圖。如第1圖所示,玻璃覆晶結構100包含有一驅動積體電路110、一異向性導電膜(Anisotropic Conductive Film,ACF)120以及一玻璃基板130,其中驅動積體電路110包含有複數個電性連接墊結構112,異向性導電膜120是由黏合劑122及導電粒子124所組成,且玻璃基板130上具有與複數個電性連接墊結構112相對應的複數個電極132。
在玻璃覆晶結構壓接的過程中,首先,將異向性導電膜120貼覆於玻璃基板130上,接著,將驅動積體電路110上的電性連接墊結構112與玻璃基板130上的電極132對齊,之後在一定的溫度、速度與壓力條件下,將驅動積體電路110與玻璃基板130壓合,以使得驅動積體電路110上的電性連接墊結構112可以藉由異向性導電膜120中的導電粒子124與玻璃基板130上的電極132電性連接,並藉由黏合劑122將積體電路110與玻璃基板130黏合。壓合後的玻璃覆晶結構可參見第2圖,因為玻璃覆晶結構的製作過程係為本發明領域中具有通常知識者所習知,故相關細節在此不再贅述。
此外,因為目前液晶顯示器的解析度越來越高,因此,驅動積體電路110的接腳數目也越來越多,亦即電性連接墊結構112的數量會增加,且電性連接墊結構112之間的間距也會越來越小。為了因應電性連接墊結構112之間的間距縮小的問題,異向性導電膜120會採用尺寸比較小的導電粒子124(大小約為3~4um)以避免電性連接墊結構112之間的短路。
接著,請參考第3圖,第3圖為第1、2圖所示之電性連接墊結構112的剖面圖。如第3圖所示,連接墊結構112包含有一連接墊302、製作於連接墊302上的絕緣層304、以及製作於連接墊302及絕緣層304上的金凸塊306。然而,因為金凸塊306係形成於連接墊302及絕緣層304上,因此在金凸塊306的表面將會形成一下凹區域,如此一來,若是導電粒子124的尺寸太小,則會使得將積體電路110的電性連接墊結構112與玻璃基板130的電極132在壓合時無法確實壓破足夠的導電粒子,而影響到其電性連接效果。
因此,本發明的目的之一在於提供一種電性連接墊結構,其中的金凸塊具有較為平坦的表面,以使得與玻璃基板上的電極壓合後具有良好的電性連接效果。
依據本發明一實施例,一種設置於一積體電路上的電性連接墊結構包含有一連接墊、一絕緣層以及一金凸塊,其中該連接墊設置於該積體電路上;該絕緣層設置於該連接墊上方,其中該絕緣層僅具有一開口部,且該開口部的形狀包含有至少一條狀彎折處;該金凸塊設置於該絕緣層上方,其中該金凸塊可以透過該絕緣層之該開口部與該連接墊電性連接。
依據本發明另一實施例,一種積體電路,包含有複數個電性連接墊結構,其中該複數個電性連接墊結構中每一個電性連接墊結構包含有一連接墊、一絕緣層以及一金凸塊,其中該連接墊設置於該積體電路上;該絕緣層設置於該連接墊上方,其中該絕緣層僅具有一開口部,且該開口部的形狀包含有至少一條狀彎折處;該金凸塊設置於該絕緣層上方,其中該金凸塊可以透過該絕緣層之該開口部與該連接墊電性連接。
請參考第4圖,第4圖為依據本發明一實施例之一玻璃覆晶結構400的示意圖。參考第4圖,玻璃覆晶結構400包含有一驅動積體電路410、一異向性導電膜420以及一玻璃基板430,其中驅動積體電路410包含有複數個電性連接墊結構412,異向性導電膜420是由黏合劑422及導電粒子424所組成,且玻璃基板430上具有與複數個電性連接墊結構412相對應的複數個電極432,其中驅動積體電路410上的電性連接墊結構412可以藉由異向性導電膜420中的導電粒子424與玻璃基板430上的電極432電性連接,且驅動積體電路410藉由黏合劑422與玻璃基板430黏合。
接著,請參考第5圖,第5圖為依據本發明一實施例之電性連接墊結構412的示意圖。如第5圖所示,電性連接墊結構412包含有一連接墊502、製作於連接墊502上的絕緣層504、以及製作於連接墊502及絕緣層504上的金凸塊506,其中絕緣層504僅具有一開口部,且該開口部的形狀包含有至少一條狀彎折處。舉例來說,請參考第6、7、8圖,絕緣層504之開口部602、702、802的形狀可分別為一“口”字型、一“弓”字型以及一魚骨型,而金凸塊506直接製作於絕緣層504及開口部602、702、802的上方,以使得金凸塊506可以透過絕緣層504之開口部602、702、802與連接墊502電性連接。
此外,雖然第6、7、8圖僅描繪出開口部為“口”字型、“弓”字型及魚骨型,然而,本發明並不以此為限,於本發明之其他實施例中,絕緣層504之開口部的形狀可以為“口”字型、“弓”字型及魚骨型的任意組合(例如開口部同時包含“口”字型及魚骨型)或是其簡單變化(例如ㄇ字型或是反“弓”字型),換句話說,只要開口部的形狀包含有至少一條狀彎折處,這些設計上的變化均應隸屬於本發明的範疇。此外,本發明所指之條狀彎折並非一定如第6、7、8圖所示之直角彎折,亦可以為非直角彎折或是弧形彎折。
此外,金凸塊506的材料可以同時包含有銅、鎳、金三層金屬層,也可以僅包含銅、鎳、金三種金屬中一或兩種金屬層,或是錫鉛合金,並以電鍍的方式形成於絕緣層之上。
本發明之絕緣層504的開口部形狀包含有至少一條狀彎折處,因此,以第6、7、8圖所示之實施例來說明,開口部條狀彎折的形狀可以使得金凸塊506的凹陷幅度大幅減少,以同樣面積的金凸塊來說,若是採用第3圖所示之習知電性連接墊結構的金凸塊下陷幅度為2um,則採用本發明之電性連接墊結構的金凸塊下陷幅度會小於1um,如此一來,金凸塊的表面將會較為平整,在進行玻璃覆晶結構壓合時也可以有效地壓破足夠的導電粒子424,而使得電性連接墊結構412與電極432具有良好的電性連接效果。
因為本發明之電性連接墊結構412的金凸塊下陷幅度很小,故異向性導電膜420可以在維持良好導電性的情形下使用尺寸更小的導電粒子424,故電性連接墊結構412之間的間距便可以進一步的縮小以增加驅動積體電路410的金凸塊密度。
此外,以上所揭露的內容均以玻璃覆晶來作說明,然而,本發明之驅動積體電路410亦可應用於薄膜覆晶(COF)封裝,亦即將第4圖所示的玻璃基板430置換為一具有多個電極的薄膜,並藉由上述壓合方式或金屬熔合共金的方式將驅動積體電路410與薄膜壓合。
簡要歸納本發明,本發明之電性連接墊結構中的絕緣層僅具有一開口部,且該開口部的形狀包含有至少一條狀彎折處,如此一來,製作於絕緣層與開口部之上的金凸塊會具有平整的表面,而使得連接墊結構與玻璃基板的電極具有良好的電性連接效果。
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。
100、400...玻璃覆晶結構
110、410...驅動積體電路
112、412...電性連接墊結構
120、420...異向性導電膜
122、422...黏合劑
124、424...導電粒子
130、430...玻璃基板
132、432...電極
302、502...連接墊
304、504...絕緣層
306、506...金凸塊
602、702、802...開口部
第1圖為一玻璃覆晶結構的示意圖。
第2圖為壓合後之玻璃覆晶結構的示意圖。
第3圖為第1、2圖所示之電性連接墊結構的剖面圖。
第4圖為依據本發明一實施例之一玻璃覆晶結構的示意圖。
第5圖為依據本發明一實施例之電性連接墊結構的示意圖。
第6圖為絕緣層之開口部的形狀為一“口”字型的示意圖。
第7圖為絕緣層之開口部的形狀為一“弓”字型的示意圖。
第8圖為絕緣層之開口部的形狀為一魚骨型的示意圖。
400...玻璃覆晶結構
410...驅動積體電路
412...電性連接墊結構
420...異向性導電膜
422...黏合劑
424...導電粒子
430...玻璃基板
432...電極
Claims (8)
- 一種電性連接墊結構,設置於一玻璃覆晶結構(Chip On Glass,COG)或是一薄膜覆晶封裝(Chip On Film,COF)中的一積體電路上,包含有:一連接墊,設置於該積體電路上;一絕緣層,設置於該連接墊上方,其中該絕緣層僅具有一開口部,且該開口部的形狀包含有至少一條狀彎折處;以及一金凸塊,設置於該絕緣層上方,其中該金凸塊可以透過該絕緣層之該開口部與該連接墊電性連接。
- 如申請專利範圍第1項所述之電性連接墊結構,其中該開口部包含有一“口”字型開口。
- 如申請專利範圍第1項所述之電性連接墊結構,其中該開口部包含有一“弓”字型開口。
- 如申請專利範圍第1項所述之電性連接墊結構,其中該開口部包含有一魚骨型開口。
- 一種積體電路,設置於一玻璃覆晶結構(Chip On Glass,COG)或是一薄膜覆晶封裝(Chip On Film,COF)中,包含有複數個電性連接墊結構,其中該複數個電性連接墊結構中每一個電性連接墊結構包含有: 一連接墊,設置於該積體電路上;一絕緣層,設置於該連接墊上方,其中該絕緣層僅具有一開口部,且該開口部的形狀包含有至少一條狀彎折處;以及一金凸塊,設置於該絕緣層上方,其中該金凸塊可以透過該絕緣層之該開口部與該連接墊電性連接。
- 如申請專利範圍第5項所述之積體電路,其中該開口部包含有一“口”字型開口。
- 如申請專利範圍第5項所述之積體電路,其中該開口部包含有一“弓”字型開口。
- 如申請專利範圍第5項所述之積體電路,其中該開口部包含有一魚骨型開口。
Priority Applications (5)
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TW099143454A TWI434383B (zh) | 2010-12-13 | 2010-12-13 | 電性連接墊結構及包含有複數個電性連接墊結構的積體電路 |
US12/983,895 US20120146215A1 (en) | 2010-12-13 | 2011-01-04 | Bonding pad structure and integrated circuit comprising a plurality of bonding pad structures |
CN201110009080.3A CN102543894B (zh) | 2010-12-13 | 2011-01-17 | 电性连接垫结构及包含有多个电性连接垫结构的集成电路 |
US13/565,785 US20120299180A1 (en) | 2010-12-13 | 2012-08-02 | Bonding pad structure and integrated circuit comprising a plurality of bonding pad structures |
US13/565,759 US20120292761A1 (en) | 2010-12-13 | 2012-08-02 | Bonding pad structure and integrated circuit comprising a plurality of bonding pad structures |
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TW099143454A TWI434383B (zh) | 2010-12-13 | 2010-12-13 | 電性連接墊結構及包含有複數個電性連接墊結構的積體電路 |
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TWI434383B true TWI434383B (zh) | 2014-04-11 |
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US8633588B2 (en) | 2011-12-21 | 2014-01-21 | Mediatek Inc. | Semiconductor package |
US9659893B2 (en) | 2011-12-21 | 2017-05-23 | Mediatek Inc. | Semiconductor package |
US20130214419A1 (en) * | 2012-02-16 | 2013-08-22 | Chipbond Technology Corporation | Semiconductor packaging method and structure thereof |
CN104898901B (zh) * | 2014-03-05 | 2017-10-13 | 纬创资通股份有限公司 | 接垫结构以及触控面板 |
EP3166143A1 (fr) * | 2015-11-05 | 2017-05-10 | Gemalto Sa | Procede de fabrication d'un dispositif a puce de circuit integre par depot direct de matiere conductrice |
CN110391039A (zh) * | 2019-07-25 | 2019-10-29 | 深圳市华星光电半导体显示技术有限公司 | 异方性导电胶膜、显示面板及显示面板的制作方法 |
CN111292614B (zh) * | 2020-01-15 | 2022-07-12 | 京东方科技集团股份有限公司 | 显示模组、显示装置 |
TWI801268B (zh) * | 2022-06-17 | 2023-05-01 | 大陸商北京集創北方科技股份有限公司 | 半導體裝置的電性連接墊結構及覆晶晶片 |
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US6181016B1 (en) * | 1999-06-08 | 2001-01-30 | Winbond Electronics Corp | Bond-pad with a single anchoring structure |
CN100428433C (zh) * | 2005-06-23 | 2008-10-22 | 矽创电子股份有限公司 | 电性连接垫的结构 |
US20070045871A1 (en) * | 2005-08-24 | 2007-03-01 | Sitronix Technology Corp. | Pad open structure |
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2010
- 2010-12-13 TW TW099143454A patent/TWI434383B/zh active
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2011
- 2011-01-04 US US12/983,895 patent/US20120146215A1/en not_active Abandoned
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2012
- 2012-08-02 US US13/565,785 patent/US20120299180A1/en not_active Abandoned
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CN102543894A (zh) | 2012-07-04 |
CN102543894B (zh) | 2016-01-20 |
US20120146215A1 (en) | 2012-06-14 |
US20120299180A1 (en) | 2012-11-29 |
US20120292761A1 (en) | 2012-11-22 |
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