TWI433755B - 研磨方法及其裝置 - Google Patents
研磨方法及其裝置 Download PDFInfo
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- TWI433755B TWI433755B TW099131617A TW99131617A TWI433755B TW I433755 B TWI433755 B TW I433755B TW 099131617 A TW099131617 A TW 099131617A TW 99131617 A TW99131617 A TW 99131617A TW I433755 B TWI433755 B TW I433755B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Robotics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
本發明是有關於一種例如適合於矽晶圓(silicon wafer)的拋光(polishing)加工等的研磨方法及其裝置。
作為半導體元件(device)的原材料的矽晶圓是自矽單晶的錠(ingot)切出後實施精研(lapping)加工,進而實施被稱作拋光加工的研磨處理而精加工成鏡面狀態。先前,該鏡面精加工僅對元件形成面來實施,但在晶圓直徑超過8英吋(inch)的例如12英吋的大直徑晶圓中,對於未形成元件的背面亦要求精加工成鏡面狀態。
例如,矽晶圓的兩面研磨通常使用行星齒輪方式的兩面研磨裝置。作為此類兩面研磨裝置,例如在專利文獻1中揭示有一種同時處理多片矽晶圓的裝置。即,該兩面研磨裝置如圖1以及圖2所示,具備:一對可旋轉的上壓盤1以及下壓盤2;多片載體(carrier)3,作為行星齒輪而圍繞該些上壓盤1以及下壓盤2間的旋轉中心而配置著;太陽齒輪(sun gear)4,配置於上壓盤1以及下壓盤2間的旋轉中心部;以及環狀的內齒輪(internal gear)5,配置於上壓盤1以及下壓盤2間的外周部。
上壓盤1可升降,其旋轉方向與下壓盤2的旋轉方向相反。在上壓盤1以及下壓盤2的各相向面上,安裝著研磨布(未圖示)。而且,載體3具有偏心配置的圓形的孔(hole)(収容孔)3a,於該孔3a內,保持以矽晶圓為典型例的圓形的工件(work-piece)6。太陽齒輪4及內齒輪5自內側及外側嚙合多個載體3,通常受到與下壓盤2同方向的旋轉驅動。
拋光加工是使上壓盤1上升並於下壓盤2上放置(set)多個載體3之後,將工件6移送至下壓盤2上,再將工件6分別供給至各載體3內來進行。供給工件6後,使上壓盤1下降,將工件6夾在上壓盤1以及下壓盤2間,具體而言夾在上下的研磨布間。在此狀態下,對上壓盤1以及下壓盤2之間供給研磨液,並且對上壓盤1以及下壓盤2、太陽齒輪4及內齒輪5進行旋轉驅動。
藉由該旋轉驅動,多個載體3在逆向旋轉的上壓盤1以及下壓盤2間進行自轉,並且圍繞太陽齒輪4來公轉。藉此,多個工件6同時受到兩面研磨。
在以上的拋光加工中,先前是將下壓盤2予以固定,並藉由吸附式的移載機器人(robot)來將工件6搬送至放置於上述下壓盤2上的多個載體3內,但是由於隨著工件的大型化所造成的壓盤周圍的內齒輪等的大型化或由此造成的公差的增大,結果導致載置於下壓盤上的載體的位置有時會變得不準確。另一方面,載體3的內徑與工件6的外徑之間的公差正趨向於受到更嚴格的限制。由於該些原因,在藉由機械方式來將工件搬送至旋轉壓盤上的載體內的方法中,存在工件無法完全嵌合至載體內的危險性,因此,需要作業員來監控及重新調整,此成為阻礙完全自動化的重要因素。
因此,於專利文獻1中提出一種方案,即,在向下壓盤上供給工件之前,將該工件與載體組合成分離自如的合體狀態,隨後在與載體合體的狀態下直接將該工件供給至下壓盤上。
藉由該方案,不需要作業員來監控及重新調整,可實現工件向下壓盤上的完全自動供給。
專利文獻1:日本專利特開2000-326222號公報
上述方法中,必須使工件預先與載體合體,在先前的藉由移載機器人的搬送步驟之前需要合體步驟,從而無法避免步驟的增加。因此,在要求提高生產效率或節能化的背景下,期望提出一種即使藉由先前的搬送步驟也可實現上述工件向研磨裝置的適當供給的方案。
而且,先前的藉由移載機器人的搬送是利用所謂的真空吸附來處理工件,因而尤其是研磨後的工件排出須真空吸附該工件的鏡面,從而導致附著於吸附面側的研磨液或灰塵及塵埃會附著於完成研磨的工件表面,成為造成製品不良的原因,因此在該工件的操作時需要注意。
因此,本發明的目的在於解決上述問題,提供一種在先前的搬送步驟中實現工件向載體的適當供給的方案。
發明者等人對將工件適當搬送至研磨裝置的壓盤上的載體內的方法進行了專心研究,結果找到一種握持該工件的端部來移送工件並將工件適當導引至載體內的方法,直至完成本發明。
即,本發明的要旨構成如下。
(1)一種研磨方法,將保持供研磨的工件的至少1個載體配置於上壓盤與下壓盤之間,將上述工件插入該載體的孔內,並將載體以及工件夾在該上壓盤與下壓盤之間,一方面對上壓盤與下壓盤之間供給研磨液,一方面使上壓盤以及下壓盤的至少任一者旋轉,以對由該載體所保持的工件進行研磨,此研磨方法的特徵在於,當將工件插入上述載體的孔內時,握持該工件的端部並將工件運至下壓盤的上方為止,相對於該下壓盤上的載體的孔而對工件進行定位,放開該工件的握持而使工件朝向上述孔以經由導引部(guide)的導引來緩緩下落。
(2)如上述(1)所述的研磨方法,其中於上述工件朝向上述孔的下落過程中,自上方朝向工件來噴射流體。
(3)如上述(1)或(2)所述的研磨方法,其中於上述研磨後,擴大上述上壓盤與下壓盤的間隔,隨後自下壓盤朝向上述工件噴射流體而使工件自上述載體的孔浮起,並握持該工件的端面而排出工件。
(4)一種研磨裝置,具有對保持供研磨的工件的至少1個載體進行載置的下壓盤以及與該下壓盤成對的上壓盤,且使該上壓盤以及下壓盤的至少任一者可旋轉,此研磨裝置的特徵在於包括用於朝向上述載體的孔來供給上述工件的移送機構,該移送機構具有自端面側以至少3點來支持工件且可彼此進退的握持用爪,於該爪的工件握持側,設有對由該握持所放開的工件朝向載體的孔來進行導引的傾斜導引面。
(5)一種研磨裝置,具有對保持供研磨的工件的至少1個載體進行載置的下壓盤以及與該下壓盤成對的上壓盤,且使該上壓盤以及下壓盤的至少任一者可旋轉,此研磨裝置的特徵在於包括用於朝向上述載體的孔來供給上述工件的移送機構,該移送機構具有:握持用爪,自端面側以至少3點來支持工件且可彼此進退;以及導引部,對由上述握持所放開的工件朝向載體的孔來進行導引。
(6)如上述(4)或(5)所述的研磨裝置,其中上述移送機構具有與上述載體上所設的至少2個定位孔吻合的至少2根定位銷。
根據本發明,無須較大地變更先前的搬送步驟,可握持工件的非研磨面的端部,例如握持晶圓的周端面,在不與研磨面接觸的狀態下將工件確實地供給至載體內。而且,研磨後的工件排出亦可在不接觸研磨面的狀態下實現,因此可避免異物附著等。
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下。
以下,對於本發明的研磨方法,參照圖3~圖7,以工件為晶圓的情況為例來詳細說明。再者,圖3~圖7中,表示將本發明適用於對1片晶圓進行研磨的裝置的示例,研磨的機構與圖1以及圖2所示的裝置基本上相同,因此對於該研磨機構,省略圖示及說明,主要表示晶圓的移送機構。即,一方面對上壓盤1以及下壓盤2之間供給研磨液,一方面對上壓盤1以及下壓盤2進行旋轉驅動的機構為同樣的機構。此時,載體的旋轉並非經由太陽齒輪4及內齒輪5,而是經由例如在載體的外周等分4點位置處嚙合的小齒輪來驅動。
此外,本發明的研磨裝置中,除了上述研磨機構以外,還具備移送機構7,該移送機構7用於朝向上述載體3的孔3a內來供給作為工件的晶圓6。該移送機構7例如具備:底座(base)板8,安裝在機器臂(robot arm)(未圖示)的前端;以及握持用爪9,設於該底座板8的同一圓周上的至少等分3點位置處,圖示例中是設於等分4點位置處,且可彼此進退。各握持用爪9具有自中間部朝向內側而傾斜的傾斜導引面9a。
在具備此種移送機構7的研磨裝置中,首先,如圖3所示,經由機器臂來將移送機構7移動至晶圓6的待機場所為止,打開握持用爪9,將晶圓6抓入握持用爪9群的內側空間,並關閉握持用爪9,藉此,利用握持用爪9的中間部,即,利用傾斜導引面9a的起點部來保持晶圓6的端面6a。此處,當保持晶圓6的端面6a時,較佳為以載置於傾斜導引面9a的起點部的形態而利用握持用爪9來保持晶圓6,以避免握持用爪9按壓於晶圓6的端面6a。
另一方面,於研磨裝置的下壓盤2上,預先將載體3載置於規定位置。
繼而,如圖3所示,將晶圓6由傾斜導引面9a的起點部所保持的狀態的移送機構7運送至下壓盤2的上方為止,此時,相對於該下壓盤2上的載體3的孔3a來進行工件6的定位。具體而言,如圖4所示,當使移送機構7朝向載體3下降時,將底座板8上所設的至少2根,圖示例中為3根的定位銷8a插入載體3上所設的至少2個,圖示例中為3個的定位用孔3b內,藉此將晶圓6準確配置於孔3a的正上方。
隨後,如圖5(a)所示,打開握持用爪9,將握持用爪9的相互間隔(直徑)擴大至稍許超過晶圓6的直徑(大致相同直徑的範圍)為止。在打開該握持用爪9的過程中,晶圓6在自重的作用下經由傾斜導引面9a的導引而朝向孔3a緩緩下落(參照圖5(b))。
在該下落的途中或下落後,較佳為如圖5(c)所示,自底座板8朝向晶圓6來噴射流體,例如噴射純水10,以將晶圓6按壓固定於孔3a。
將晶圓6準確地插入孔3a內以後,如圖6所示,自下壓盤2的真空吸附孔2a來進行所謂的真空抽吸,以將晶圓6牢固地固定於孔3a內。再者,只要測定此時的真空抽吸中的壓力,便可容易地確認晶圓6是否已被準確地插入孔3a內。
最後,如圖6所示,使移送機構7自上壓盤1及下壓盤2之間退讓,並對晶圓6進行研磨。
再者,上述示例中,於握持用爪9上設有傾斜導引面9a並利用該傾斜導引面9a來將晶圓6朝向載體3的孔3a予以導引,但如圖7(a)中,自下表面側觀察由握持用爪9所保持的晶圓6的狀態所示,於移送機構7上,在握持用爪9之外另行設置導引部90,利用該導引部90來與傾斜導引面9a同樣地適當導引晶圓6的下落。即,在等分3點位置處所設的握持用爪9之間設置導引部90,如圖7(a)所示,在由握持用爪9保持著晶圓6的狀態下,直接將移送機構7移動至上壓盤1及下壓盤2之間,如圖7(b)所示,將導引部90朝向晶圓6關閉而接近配置於該晶圓6的周緣。在此狀態下,如圖7(c)所示,打開握持用爪9,使晶圓6在自重的作用下經由導引部90的導引而朝向孔3a緩緩下落。隨後,如圖7(d)所示,打開導引部90後,使移送機構7自上壓盤1及下壓盤2之間退讓,並對晶圓6進行研磨。
當研磨處理結束後,擴大上壓盤1與下壓盤2的間隔,隨後如圖8(a)所示,將移送機構7移動至下壓盤2的上方。此時,握持用爪9的相互間隔大於晶圓6的直徑。繼而,如圖8(b)所示,停止自下壓盤2的真空吸附孔2a所進行的真空抽吸,並且自該孔2a朝向晶圓6來噴射流體,例如噴射純水10而使晶圓6自載體3的孔3a浮起。
繼而,如圖8(c)所示,關閉握持用爪9,縮小相互間隔以握持該浮起狀態的晶圓6的端面。即使在此階段,較佳為亦以載置於傾斜導引面9a的起點部的形態而利用握持用爪9來保持晶圓6,以避免握持用爪9按壓於晶圓6的端面6a。隨後,只要使移送機構7自上下壓盤1以及2之間退讓,便可完成研磨後的晶圓6的排出。
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
1...上壓盤
2...下壓盤
2a‧‧‧真空吸附孔
3‧‧‧載體
3a‧‧‧孔
3b‧‧‧定位孔
4‧‧‧太陽齒輪
5‧‧‧內齒輪
6‧‧‧工件(晶圓)
6a‧‧‧端面
7‧‧‧移送機構
8‧‧‧底座板
8a‧‧‧定位銷
9‧‧‧握持用爪
9a‧‧‧傾斜導引面
10‧‧‧純水
90‧‧‧導引部
圖1是表示研磨裝置的構成的圖。
圖2是圖1的A-A線箭頭圖。
圖3是表示本發明的工件向載體的搬送流程的圖。
圖4是表示本發明的工件向載體的搬送流程的圖。
圖5(a)、圖5(b)、圖5(c)是表示本發明的工件向載體的搬送流程的圖。
圖6是表示本發明的工件向載體的搬送流程的圖。
圖7(a)、圖7(b)、圖7(c)、圖7(d)是表示將工件導引向載體的導引部的另一構成的圖。
圖8(a)、圖8(b)、圖8(c)是表示本發明的工件自載體的排出流程的圖。
1...上壓盤
2...下壓盤
3...載體
3a...孔
6...工件(晶圓)
8...底座板
9...握持用爪
9a...傾斜導引面
Claims (6)
- 一種研磨方法,將保持供研磨的工件的至少1個載體配置於上壓盤與下壓盤之間,將上述工件插入該載體的孔內,並將該載體以及上述工件夾在該上壓盤與下壓盤之間,一方面對上壓盤與下壓盤之間供給研磨液,一方面使該上壓盤以及下壓盤的至少任一者旋轉,以對由該載體所保持的工件進行研磨,此研磨方法的特徵在於:當使用移送機構將上述工件插入上述載體的孔內時,握持該工件的端部並將該工件運至該下壓盤的上方為止,相對於該下壓盤上的載體的孔而對該工件進行定位,放開該工件的握持而使該工件朝向上述孔以經由導引部的導引來緩緩下落,其中上述載體具有至少2個定位用孔,且上述移送機構具有與上述至少2個定位用孔吻合的至少2根定位銷,上述定位是藉由將上述至少2根定位銷插入於上述至少2個定位用孔的方式進行。
- 如申請專利範圍第1項所述的研磨方法,其中於上述工件朝向上述孔的下落過程中,自上方朝向工件來噴射流體。
- 如申請專利範圍第1項或第2項所述的研磨方法,其中於上述研磨後,擴大上述上壓盤與下壓盤的間隔,隨後自下壓盤朝向上述工件噴射流體而使工件自上述載體的孔浮起,並握持該工件的端面而排出該工件。
- 如申請專利範圍第1項所述的研磨方法,其中當將 上述工件插入上述載體的孔內時,藉由自該工件的端面側以至少3點來支持該工件且可彼此進退的握持用爪,握持該工件的端部並將該工件運至該下壓盤的上方為止,該工件的周緣配置了上述握持用爪之外另行設置的導引部,藉由該握持用爪放開該工件的握持而使該工件朝向上述孔以經由前述另外設置的導引部的導引來緩緩下落。
- 一種研磨裝置,具有對保持供研磨的工件的至少1個載體進行載置的下壓盤以及與該下壓盤成對的上壓盤,且使該上壓盤以及下壓盤的至少任一者可旋轉,此研磨裝置的特徵在於:包括用於朝向上述載體的孔來供給上述工件的移送機構,該移送機構具有自端面側以至少3點來支持該工件且可彼此進退的握持用爪,於該爪的工件握持側,設有對由該握持所放開的工件朝向載體的孔來進行導引的傾斜導引面,其中上述移送機構具有與上述載體上所設的至少2個定位用孔吻合的至少2根定位銷。
- 一種研磨裝置,具有對保持供研磨的工件的至少1個載體進行載置的下壓盤以及與該下壓盤成對的上壓盤,且使該上壓盤以及下壓盤的至少任一者可旋轉,此研磨裝置的特徵在於:包括用於朝向上述載體的孔來供給上述工件的移送機構,該移送機構具有:握持用爪,自端面側以至少3點來支持工件且可彼此進退;上述握持用爪之外另行設置的導 引部,對由上述握持所放開的工件朝向載體的孔來進行導引;以及與上述載體上所設的至少2個定位用孔吻合的至少2根定位銷。
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JP6183301B2 (ja) * | 2014-06-16 | 2017-08-23 | 信越半導体株式会社 | 自動ハンドリング装置 |
KR101616464B1 (ko) * | 2014-11-18 | 2016-04-29 | 주식회사 엘지실트론 | 웨이퍼 연마장비의 웨이퍼 로딩장치 및 웨이퍼 로딩위치 조정 방법 |
JP7236527B2 (ja) * | 2018-01-19 | 2023-03-09 | 株式会社東京精密 | ワークの保持装置、及び、ワークの保持方法 |
JP7148373B2 (ja) * | 2018-11-20 | 2022-10-05 | 株式会社東京精密 | ウエハ受け渡し装置 |
JP7148374B2 (ja) * | 2018-11-20 | 2022-10-05 | 株式会社東京精密 | ウエハ受け渡し装置 |
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DE112010003696T5 (de) | 2012-08-30 |
WO2011033724A1 (ja) | 2011-03-24 |
US8870627B2 (en) | 2014-10-28 |
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