TWI429780B - 真空泵送系統 - Google Patents
真空泵送系統 Download PDFInfo
- Publication number
- TWI429780B TWI429780B TW96113682A TW96113682A TWI429780B TW I429780 B TWI429780 B TW I429780B TW 96113682 A TW96113682 A TW 96113682A TW 96113682 A TW96113682 A TW 96113682A TW I429780 B TWI429780 B TW I429780B
- Authority
- TW
- Taiwan
- Prior art keywords
- chamber
- reactant
- pump
- gas
- vacuum
- Prior art date
Links
- 238000005086 pumping Methods 0.000 title description 16
- 239000000376 reactant Substances 0.000 claims description 108
- 238000000034 method Methods 0.000 claims description 53
- 238000010926 purge Methods 0.000 claims description 24
- 238000012544 monitoring process Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000231 atomic layer deposition Methods 0.000 claims description 11
- 238000005137 deposition process Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 92
- 239000002243 precursor Substances 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000037029 cross reaction Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011343 solid material Substances 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- WEHOWPRPYYXMDZ-UHFFFAOYSA-N C(C)N(C)[Ru].[Ru] Chemical compound C(C)N(C)[Ru].[Ru] WEHOWPRPYYXMDZ-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B41/00—Pumping installations or systems specially adapted for elastic fluids
- F04B41/06—Combinations of two or more pumps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B41/00—Pumping installations or systems specially adapted for elastic fluids
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Vapour Deposition (AREA)
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0607616A GB0607616D0 (en) | 2006-04-18 | 2006-04-18 | Vacuum pumping system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200808996A TW200808996A (en) | 2008-02-16 |
| TWI429780B true TWI429780B (zh) | 2014-03-11 |
Family
ID=36580771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW96113682A TWI429780B (zh) | 2006-04-18 | 2007-04-18 | 真空泵送系統 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9133836B2 (enExample) |
| EP (1) | EP2007918B1 (enExample) |
| JP (1) | JP4979763B2 (enExample) |
| KR (1) | KR101434686B1 (enExample) |
| GB (1) | GB0607616D0 (enExample) |
| TW (1) | TWI429780B (enExample) |
| WO (1) | WO2007119077A2 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011039812A1 (ja) * | 2009-09-30 | 2011-04-07 | 樫山工業株式会社 | 容積移送型ドライ真空ポンプ |
| JP5504107B2 (ja) * | 2010-09-06 | 2014-05-28 | エドワーズ株式会社 | 逆流防止システム及び該逆流防止システムを備えた真空ポンプ |
| US20130237063A1 (en) * | 2012-03-09 | 2013-09-12 | Seshasayee Varadarajan | Split pumping method, apparatus, and system |
| US20140083544A1 (en) * | 2012-09-21 | 2014-03-27 | Brian Chan | Manifolds and methods and systems using them |
| DE102013219464A1 (de) * | 2013-09-26 | 2015-03-26 | Inficon Gmbh | Evakuierung einer Folienkammer |
| US9957612B2 (en) * | 2014-01-17 | 2018-05-01 | Ceres Technologies, Inc. | Delivery device, methods of manufacture thereof and articles comprising the same |
| JP5808454B1 (ja) | 2014-04-25 | 2015-11-10 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体 |
| JP6594638B2 (ja) * | 2015-03-25 | 2019-10-23 | 株式会社荏原製作所 | 真空排気システム |
| KR102154082B1 (ko) * | 2014-05-30 | 2020-09-09 | 가부시키가이샤 에바라 세이사꾸쇼 | 진공 배기 시스템 |
| TWI563171B (en) * | 2015-06-03 | 2016-12-21 | Koge Micro Tech Co Ltd | Vacuum pumping apparatus |
| JP2017089462A (ja) * | 2015-11-06 | 2017-05-25 | エドワーズ株式会社 | 真空ポンプの判断システム、および真空ポンプ |
| KR20180052019A (ko) * | 2016-11-09 | 2018-05-17 | 고려대학교 산학협력단 | X선 형광분석 원자층 증착 장치 및 x선 형광분석 원자층 증착 방법 |
| DE102017214687A1 (de) * | 2017-08-22 | 2019-02-28 | centrotherm international AG | Behandlungsvorrichtung für Substrate und Verfahren zum Betrieb einer solchen Behandlungsvorrichtung |
| JP7038196B2 (ja) * | 2018-03-26 | 2022-03-17 | 株式会社Kokusai Electric | 処理装置、半導体装置の製造方法及びプログラム |
| CN110387536A (zh) * | 2018-04-23 | 2019-10-29 | 长鑫存储技术有限公司 | 原子层沉积方法及炉管设备 |
| CN111312841A (zh) * | 2018-12-12 | 2020-06-19 | 汉能移动能源控股集团有限公司 | 一种抽真空装置及层压系统 |
| GB2579788B (en) * | 2018-12-13 | 2021-06-30 | Edwards Ltd | Abatement apparatus |
| EP3916231A1 (en) * | 2020-05-29 | 2021-12-01 | Agilent Technologies, Inc. | Vacuum pumping system having a plurality of positive displacement vacuum pumps and method for operating the same |
| US20210404059A1 (en) * | 2020-06-26 | 2021-12-30 | Applied Materials, Inc. | Processing system and method of controlling conductance in a processing system |
| TWI867267B (zh) * | 2021-02-24 | 2024-12-21 | 日商國際電氣股份有限公司 | 基板處理裝置、半導體裝置之製造方法、程式及排氣系統 |
| CN114103469B (zh) * | 2021-11-10 | 2023-04-07 | 厦门汉印电子技术有限公司 | 一种喷墨打印机的气路系统 |
| DE102022100843A1 (de) | 2022-01-14 | 2023-07-20 | VON ARDENNE Asset GmbH & Co. KG | Verfahren, Steuervorrichtung, Speichermedium und Vakuumanordnung |
| JP2023127381A (ja) * | 2022-03-01 | 2023-09-13 | 株式会社島津製作所 | 真空ポンプの制御装置、及び、制御方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04103767A (ja) * | 1990-08-22 | 1992-04-06 | Nec Corp | 低圧化学気相成長装置 |
| JPH10312968A (ja) | 1997-05-13 | 1998-11-24 | Sony Corp | 排気切換方法及び排気切換装置 |
| US20020129768A1 (en) * | 2001-03-15 | 2002-09-19 | Carpenter Craig M. | Chemical vapor deposition apparatuses and deposition methods |
| JP2003083248A (ja) * | 2001-09-06 | 2003-03-19 | Ebara Corp | 真空排気システム |
| US6911092B2 (en) * | 2002-01-17 | 2005-06-28 | Sundew Technologies, Llc | ALD apparatus and method |
| US6955707B2 (en) | 2002-06-10 | 2005-10-18 | The Boc Group, Inc. | Method of recycling fluorine using an adsorption purification process |
| KR100498467B1 (ko) * | 2002-12-05 | 2005-07-01 | 삼성전자주식회사 | 배기 경로에서의 파우더 생성을 방지할 수 있는 원자층증착 장비 |
| GB0322602D0 (en) | 2003-09-26 | 2003-10-29 | Boc Group Inc | Vent-run gas switching systems |
| US7647886B2 (en) * | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
| US20050221004A1 (en) * | 2004-01-20 | 2005-10-06 | Kilpela Olli V | Vapor reactant source system with choked-flow elements |
| GB0412623D0 (en) * | 2004-06-07 | 2004-07-07 | Boc Group Plc | Method controlling operation of a semiconductor processing system |
| US20060073276A1 (en) * | 2004-10-04 | 2006-04-06 | Eric Antonissen | Multi-zone atomic layer deposition apparatus and method |
-
2006
- 2006-04-18 GB GB0607616A patent/GB0607616D0/en not_active Ceased
-
2007
- 2007-03-30 EP EP20070733597 patent/EP2007918B1/en not_active Not-in-force
- 2007-03-30 JP JP2009505968A patent/JP4979763B2/ja not_active Expired - Fee Related
- 2007-03-30 KR KR1020087025315A patent/KR101434686B1/ko not_active Expired - Fee Related
- 2007-03-30 WO PCT/GB2007/050174 patent/WO2007119077A2/en not_active Ceased
- 2007-03-30 US US12/226,083 patent/US9133836B2/en not_active Expired - Fee Related
- 2007-04-18 TW TW96113682A patent/TWI429780B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP2007918A2 (en) | 2008-12-31 |
| US20090208649A1 (en) | 2009-08-20 |
| KR101434686B1 (ko) | 2014-08-26 |
| TW200808996A (en) | 2008-02-16 |
| KR20080110823A (ko) | 2008-12-19 |
| JP4979763B2 (ja) | 2012-07-18 |
| GB0607616D0 (en) | 2006-05-31 |
| WO2007119077A2 (en) | 2007-10-25 |
| US9133836B2 (en) | 2015-09-15 |
| JP2009534574A (ja) | 2009-09-24 |
| WO2007119077A3 (en) | 2008-03-20 |
| EP2007918B1 (en) | 2014-07-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |