JP4979763B2 - 真空排気システム - Google Patents

真空排気システム Download PDF

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Publication number
JP4979763B2
JP4979763B2 JP2009505968A JP2009505968A JP4979763B2 JP 4979763 B2 JP4979763 B2 JP 4979763B2 JP 2009505968 A JP2009505968 A JP 2009505968A JP 2009505968 A JP2009505968 A JP 2009505968A JP 4979763 B2 JP4979763 B2 JP 4979763B2
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JP
Japan
Prior art keywords
chamber
reactant
pump
gas
vacuum pump
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Expired - Fee Related
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JP2009505968A
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English (en)
Japanese (ja)
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JP2009534574A (ja
JP2009534574A5 (enExample
Inventor
クロストファー マーク ベイリー
Original Assignee
エドワーズ リミテッド
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Publication of JP2009534574A5 publication Critical patent/JP2009534574A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B41/00—Pumping installations or systems specially adapted for elastic fluids
    • F04B41/06—Combinations of two or more pumps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B41/00—Pumping installations or systems specially adapted for elastic fluids

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
JP2009505968A 2006-04-18 2007-03-30 真空排気システム Expired - Fee Related JP4979763B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0607616.0 2006-04-18
GB0607616A GB0607616D0 (en) 2006-04-18 2006-04-18 Vacuum pumping system
PCT/GB2007/050174 WO2007119077A2 (en) 2006-04-18 2007-03-30 Vacuum pumping system

Publications (3)

Publication Number Publication Date
JP2009534574A JP2009534574A (ja) 2009-09-24
JP2009534574A5 JP2009534574A5 (enExample) 2010-04-15
JP4979763B2 true JP4979763B2 (ja) 2012-07-18

Family

ID=36580771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009505968A Expired - Fee Related JP4979763B2 (ja) 2006-04-18 2007-03-30 真空排気システム

Country Status (7)

Country Link
US (1) US9133836B2 (enExample)
EP (1) EP2007918B1 (enExample)
JP (1) JP4979763B2 (enExample)
KR (1) KR101434686B1 (enExample)
GB (1) GB0607616D0 (enExample)
TW (1) TWI429780B (enExample)
WO (1) WO2007119077A2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
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WO2011039812A1 (ja) * 2009-09-30 2011-04-07 樫山工業株式会社 容積移送型ドライ真空ポンプ
JP5504107B2 (ja) * 2010-09-06 2014-05-28 エドワーズ株式会社 逆流防止システム及び該逆流防止システムを備えた真空ポンプ
US20130237063A1 (en) * 2012-03-09 2013-09-12 Seshasayee Varadarajan Split pumping method, apparatus, and system
US20140083544A1 (en) * 2012-09-21 2014-03-27 Brian Chan Manifolds and methods and systems using them
DE102013219464A1 (de) * 2013-09-26 2015-03-26 Inficon Gmbh Evakuierung einer Folienkammer
US9957612B2 (en) * 2014-01-17 2018-05-01 Ceres Technologies, Inc. Delivery device, methods of manufacture thereof and articles comprising the same
JP5808454B1 (ja) 2014-04-25 2015-11-10 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
JP6594638B2 (ja) * 2015-03-25 2019-10-23 株式会社荏原製作所 真空排気システム
KR102154082B1 (ko) * 2014-05-30 2020-09-09 가부시키가이샤 에바라 세이사꾸쇼 진공 배기 시스템
TWI563171B (en) * 2015-06-03 2016-12-21 Koge Micro Tech Co Ltd Vacuum pumping apparatus
JP2017089462A (ja) * 2015-11-06 2017-05-25 エドワーズ株式会社 真空ポンプの判断システム、および真空ポンプ
KR20180052019A (ko) * 2016-11-09 2018-05-17 고려대학교 산학협력단 X선 형광분석 원자층 증착 장치 및 x선 형광분석 원자층 증착 방법
DE102017214687A1 (de) * 2017-08-22 2019-02-28 centrotherm international AG Behandlungsvorrichtung für Substrate und Verfahren zum Betrieb einer solchen Behandlungsvorrichtung
JP7038196B2 (ja) * 2018-03-26 2022-03-17 株式会社Kokusai Electric 処理装置、半導体装置の製造方法及びプログラム
CN110387536A (zh) * 2018-04-23 2019-10-29 长鑫存储技术有限公司 原子层沉积方法及炉管设备
CN111312841A (zh) * 2018-12-12 2020-06-19 汉能移动能源控股集团有限公司 一种抽真空装置及层压系统
GB2579788B (en) * 2018-12-13 2021-06-30 Edwards Ltd Abatement apparatus
EP3916231A1 (en) * 2020-05-29 2021-12-01 Agilent Technologies, Inc. Vacuum pumping system having a plurality of positive displacement vacuum pumps and method for operating the same
US20210404059A1 (en) * 2020-06-26 2021-12-30 Applied Materials, Inc. Processing system and method of controlling conductance in a processing system
TWI867267B (zh) * 2021-02-24 2024-12-21 日商國際電氣股份有限公司 基板處理裝置、半導體裝置之製造方法、程式及排氣系統
CN114103469B (zh) * 2021-11-10 2023-04-07 厦门汉印电子技术有限公司 一种喷墨打印机的气路系统
DE102022100843A1 (de) 2022-01-14 2023-07-20 VON ARDENNE Asset GmbH & Co. KG Verfahren, Steuervorrichtung, Speichermedium und Vakuumanordnung
JP2023127381A (ja) * 2022-03-01 2023-09-13 株式会社島津製作所 真空ポンプの制御装置、及び、制御方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103767A (ja) * 1990-08-22 1992-04-06 Nec Corp 低圧化学気相成長装置
JPH10312968A (ja) 1997-05-13 1998-11-24 Sony Corp 排気切換方法及び排気切換装置
US20020129768A1 (en) * 2001-03-15 2002-09-19 Carpenter Craig M. Chemical vapor deposition apparatuses and deposition methods
JP2003083248A (ja) * 2001-09-06 2003-03-19 Ebara Corp 真空排気システム
US6911092B2 (en) * 2002-01-17 2005-06-28 Sundew Technologies, Llc ALD apparatus and method
US6955707B2 (en) 2002-06-10 2005-10-18 The Boc Group, Inc. Method of recycling fluorine using an adsorption purification process
KR100498467B1 (ko) * 2002-12-05 2005-07-01 삼성전자주식회사 배기 경로에서의 파우더 생성을 방지할 수 있는 원자층증착 장비
GB0322602D0 (en) 2003-09-26 2003-10-29 Boc Group Inc Vent-run gas switching systems
US7647886B2 (en) * 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US20050221004A1 (en) * 2004-01-20 2005-10-06 Kilpela Olli V Vapor reactant source system with choked-flow elements
GB0412623D0 (en) * 2004-06-07 2004-07-07 Boc Group Plc Method controlling operation of a semiconductor processing system
US20060073276A1 (en) * 2004-10-04 2006-04-06 Eric Antonissen Multi-zone atomic layer deposition apparatus and method

Also Published As

Publication number Publication date
EP2007918A2 (en) 2008-12-31
US20090208649A1 (en) 2009-08-20
KR101434686B1 (ko) 2014-08-26
TW200808996A (en) 2008-02-16
KR20080110823A (ko) 2008-12-19
GB0607616D0 (en) 2006-05-31
TWI429780B (zh) 2014-03-11
WO2007119077A2 (en) 2007-10-25
US9133836B2 (en) 2015-09-15
JP2009534574A (ja) 2009-09-24
WO2007119077A3 (en) 2008-03-20
EP2007918B1 (en) 2014-07-09

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