KR101434686B1 - 진공 펌핑 시스템, 원자층 증착 장치, 챔버 배기 방법 및 원자층 증착 실행 방법 - Google Patents

진공 펌핑 시스템, 원자층 증착 장치, 챔버 배기 방법 및 원자층 증착 실행 방법 Download PDF

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KR101434686B1
KR101434686B1 KR1020087025315A KR20087025315A KR101434686B1 KR 101434686 B1 KR101434686 B1 KR 101434686B1 KR 1020087025315 A KR1020087025315 A KR 1020087025315A KR 20087025315 A KR20087025315 A KR 20087025315A KR 101434686 B1 KR101434686 B1 KR 101434686B1
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South Korea
Prior art keywords
chamber
vacuum pump
reactant
gas
vacuum
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English (en)
Korean (ko)
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KR20080110823A (ko
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크리스토퍼 마크 베일리
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에드워즈 리미티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B41/00—Pumping installations or systems specially adapted for elastic fluids
    • F04B41/06—Combinations of two or more pumps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B41/00—Pumping installations or systems specially adapted for elastic fluids

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
KR1020087025315A 2006-04-18 2007-03-30 진공 펌핑 시스템, 원자층 증착 장치, 챔버 배기 방법 및 원자층 증착 실행 방법 Expired - Fee Related KR101434686B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0607616.0 2006-04-18
GB0607616A GB0607616D0 (en) 2006-04-18 2006-04-18 Vacuum pumping system
PCT/GB2007/050174 WO2007119077A2 (en) 2006-04-18 2007-03-30 Vacuum pumping system

Publications (2)

Publication Number Publication Date
KR20080110823A KR20080110823A (ko) 2008-12-19
KR101434686B1 true KR101434686B1 (ko) 2014-08-26

Family

ID=36580771

Family Applications (1)

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KR1020087025315A Expired - Fee Related KR101434686B1 (ko) 2006-04-18 2007-03-30 진공 펌핑 시스템, 원자층 증착 장치, 챔버 배기 방법 및 원자층 증착 실행 방법

Country Status (7)

Country Link
US (1) US9133836B2 (enExample)
EP (1) EP2007918B1 (enExample)
JP (1) JP4979763B2 (enExample)
KR (1) KR101434686B1 (enExample)
GB (1) GB0607616D0 (enExample)
TW (1) TWI429780B (enExample)
WO (1) WO2007119077A2 (enExample)

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WO2011039812A1 (ja) * 2009-09-30 2011-04-07 樫山工業株式会社 容積移送型ドライ真空ポンプ
JP5504107B2 (ja) * 2010-09-06 2014-05-28 エドワーズ株式会社 逆流防止システム及び該逆流防止システムを備えた真空ポンプ
US20130237063A1 (en) * 2012-03-09 2013-09-12 Seshasayee Varadarajan Split pumping method, apparatus, and system
US20140083544A1 (en) * 2012-09-21 2014-03-27 Brian Chan Manifolds and methods and systems using them
DE102013219464A1 (de) * 2013-09-26 2015-03-26 Inficon Gmbh Evakuierung einer Folienkammer
US9957612B2 (en) * 2014-01-17 2018-05-01 Ceres Technologies, Inc. Delivery device, methods of manufacture thereof and articles comprising the same
JP5808454B1 (ja) 2014-04-25 2015-11-10 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
JP6594638B2 (ja) * 2015-03-25 2019-10-23 株式会社荏原製作所 真空排気システム
KR102154082B1 (ko) * 2014-05-30 2020-09-09 가부시키가이샤 에바라 세이사꾸쇼 진공 배기 시스템
TWI563171B (en) * 2015-06-03 2016-12-21 Koge Micro Tech Co Ltd Vacuum pumping apparatus
JP2017089462A (ja) * 2015-11-06 2017-05-25 エドワーズ株式会社 真空ポンプの判断システム、および真空ポンプ
KR20180052019A (ko) * 2016-11-09 2018-05-17 고려대학교 산학협력단 X선 형광분석 원자층 증착 장치 및 x선 형광분석 원자층 증착 방법
DE102017214687A1 (de) * 2017-08-22 2019-02-28 centrotherm international AG Behandlungsvorrichtung für Substrate und Verfahren zum Betrieb einer solchen Behandlungsvorrichtung
JP7038196B2 (ja) * 2018-03-26 2022-03-17 株式会社Kokusai Electric 処理装置、半導体装置の製造方法及びプログラム
CN110387536A (zh) * 2018-04-23 2019-10-29 长鑫存储技术有限公司 原子层沉积方法及炉管设备
CN111312841A (zh) * 2018-12-12 2020-06-19 汉能移动能源控股集团有限公司 一种抽真空装置及层压系统
GB2579788B (en) * 2018-12-13 2021-06-30 Edwards Ltd Abatement apparatus
EP3916231A1 (en) * 2020-05-29 2021-12-01 Agilent Technologies, Inc. Vacuum pumping system having a plurality of positive displacement vacuum pumps and method for operating the same
US20210404059A1 (en) * 2020-06-26 2021-12-30 Applied Materials, Inc. Processing system and method of controlling conductance in a processing system
TWI867267B (zh) * 2021-02-24 2024-12-21 日商國際電氣股份有限公司 基板處理裝置、半導體裝置之製造方法、程式及排氣系統
CN114103469B (zh) * 2021-11-10 2023-04-07 厦门汉印电子技术有限公司 一种喷墨打印机的气路系统
DE102022100843A1 (de) 2022-01-14 2023-07-20 VON ARDENNE Asset GmbH & Co. KG Verfahren, Steuervorrichtung, Speichermedium und Vakuumanordnung
JP2023127381A (ja) * 2022-03-01 2023-09-13 株式会社島津製作所 真空ポンプの制御装置、及び、制御方法

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KR100498467B1 (ko) 2002-12-05 2005-07-01 삼성전자주식회사 배기 경로에서의 파우더 생성을 방지할 수 있는 원자층증착 장비

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Also Published As

Publication number Publication date
EP2007918A2 (en) 2008-12-31
US20090208649A1 (en) 2009-08-20
TW200808996A (en) 2008-02-16
KR20080110823A (ko) 2008-12-19
JP4979763B2 (ja) 2012-07-18
GB0607616D0 (en) 2006-05-31
TWI429780B (zh) 2014-03-11
WO2007119077A2 (en) 2007-10-25
US9133836B2 (en) 2015-09-15
JP2009534574A (ja) 2009-09-24
WO2007119077A3 (en) 2008-03-20
EP2007918B1 (en) 2014-07-09

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