TWI428711B - 決定方法、曝光方法、和儲存媒介 - Google Patents

決定方法、曝光方法、和儲存媒介 Download PDF

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Publication number
TWI428711B
TWI428711B TW100131280A TW100131280A TWI428711B TW I428711 B TWI428711 B TW I428711B TW 100131280 A TW100131280 A TW 100131280A TW 100131280 A TW100131280 A TW 100131280A TW I428711 B TWI428711 B TW I428711B
Authority
TW
Taiwan
Prior art keywords
image
pattern
mask
optical system
intensity distribution
Prior art date
Application number
TW100131280A
Other languages
English (en)
Chinese (zh)
Other versions
TW201219995A (en
Inventor
行田裕一
石井弘之
深川容三
品野勇治
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW201219995A publication Critical patent/TW201219995A/zh
Application granted granted Critical
Publication of TWI428711B publication Critical patent/TWI428711B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW100131280A 2010-09-01 2011-08-31 決定方法、曝光方法、和儲存媒介 TWI428711B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010196093A JP5513325B2 (ja) 2010-09-01 2010-09-01 決定方法、露光方法及びプログラム

Publications (2)

Publication Number Publication Date
TW201219995A TW201219995A (en) 2012-05-16
TWI428711B true TWI428711B (zh) 2014-03-01

Family

ID=45697718

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100131280A TWI428711B (zh) 2010-09-01 2011-08-31 決定方法、曝光方法、和儲存媒介

Country Status (4)

Country Link
US (1) US8450031B2 (enExample)
JP (1) JP5513325B2 (enExample)
KR (1) KR101351215B1 (enExample)
TW (1) TWI428711B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5513324B2 (ja) * 2010-09-01 2014-06-04 キヤノン株式会社 決定方法、露光方法及びプログラム
JP5539140B2 (ja) * 2010-09-28 2014-07-02 キヤノン株式会社 決定方法、露光方法、プログラム及びコンピュータ
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
JP5969848B2 (ja) * 2012-07-19 2016-08-17 キヤノン株式会社 露光装置、調整対象の調整量を求める方法、プログラム及びデバイスの製造方法
WO2014042044A1 (ja) * 2012-09-11 2014-03-20 株式会社ニコン 瞳輝度分布の設定方法
US9870784B2 (en) 2013-09-06 2018-01-16 Nuance Communications, Inc. Method for voicemail quality detection
US9685173B2 (en) 2013-09-06 2017-06-20 Nuance Communications, Inc. Method for non-intrusive acoustic parameter estimation
JP5681309B2 (ja) * 2014-03-18 2015-03-04 キヤノン株式会社 決定方法、露光方法及びプログラム
US9939732B2 (en) * 2015-10-27 2018-04-10 Cymer, Llc Controller for an optical system
CN107438163B (zh) * 2017-07-31 2020-07-07 努比亚技术有限公司 一种拍照方法、终端及计算机可读存储介质
JP7390804B2 (ja) * 2019-05-17 2023-12-04 キヤノン株式会社 露光装置、露光方法、決定方法および物品製造方法
CN110426831B (zh) * 2019-06-17 2021-08-03 华南师范大学 一种聚焦照明系统及方法
CN120848125A (zh) * 2025-04-02 2025-10-28 全智芯(上海)技术有限公司 用于光源掩模优化的方法、设备、存储介质及程序产品

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5680588A (en) * 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
US6563566B2 (en) 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
US7057709B2 (en) 2003-12-04 2006-06-06 International Business Machines Corporation Printing a mask with maximum possible process window through adjustment of the source distribution

Also Published As

Publication number Publication date
US20120052448A1 (en) 2012-03-01
JP5513325B2 (ja) 2014-06-04
US8450031B2 (en) 2013-05-28
KR101351215B1 (ko) 2014-01-14
JP2012054426A (ja) 2012-03-15
TW201219995A (en) 2012-05-16
KR20120022665A (ko) 2012-03-12

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