KR101351215B1 - 결정 방법, 노광 방법 및 기억 매체 - Google Patents

결정 방법, 노광 방법 및 기억 매체 Download PDF

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Publication number
KR101351215B1
KR101351215B1 KR1020110084767A KR20110084767A KR101351215B1 KR 101351215 B1 KR101351215 B1 KR 101351215B1 KR 1020110084767 A KR1020110084767 A KR 1020110084767A KR 20110084767 A KR20110084767 A KR 20110084767A KR 101351215 B1 KR101351215 B1 KR 101351215B1
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KR
South Korea
Prior art keywords
pattern
image
mask
optical system
light source
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Expired - Fee Related
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KR1020110084767A
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English (en)
Korean (ko)
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KR20120022665A (ko
Inventor
유이찌 교다
히로유끼 이시이
요오조오 후까가와
유지 시나노
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20120022665A publication Critical patent/KR20120022665A/ko
Application granted granted Critical
Publication of KR101351215B1 publication Critical patent/KR101351215B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020110084767A 2010-09-01 2011-08-24 결정 방법, 노광 방법 및 기억 매체 Expired - Fee Related KR101351215B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-196093 2010-09-01
JP2010196093A JP5513325B2 (ja) 2010-09-01 2010-09-01 決定方法、露光方法及びプログラム

Publications (2)

Publication Number Publication Date
KR20120022665A KR20120022665A (ko) 2012-03-12
KR101351215B1 true KR101351215B1 (ko) 2014-01-14

Family

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Application Number Title Priority Date Filing Date
KR1020110084767A Expired - Fee Related KR101351215B1 (ko) 2010-09-01 2011-08-24 결정 방법, 노광 방법 및 기억 매체

Country Status (4)

Country Link
US (1) US8450031B2 (enExample)
JP (1) JP5513325B2 (enExample)
KR (1) KR101351215B1 (enExample)
TW (1) TWI428711B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5513324B2 (ja) * 2010-09-01 2014-06-04 キヤノン株式会社 決定方法、露光方法及びプログラム
JP5539140B2 (ja) * 2010-09-28 2014-07-02 キヤノン株式会社 決定方法、露光方法、プログラム及びコンピュータ
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
JP5969848B2 (ja) * 2012-07-19 2016-08-17 キヤノン株式会社 露光装置、調整対象の調整量を求める方法、プログラム及びデバイスの製造方法
JP5920610B2 (ja) * 2012-09-11 2016-05-18 株式会社ニコン 瞳強度分布の設定方法、照明光学系およびその調整方法、露光装置、並びにデバイス製造方法
US9685173B2 (en) 2013-09-06 2017-06-20 Nuance Communications, Inc. Method for non-intrusive acoustic parameter estimation
US9870784B2 (en) 2013-09-06 2018-01-16 Nuance Communications, Inc. Method for voicemail quality detection
JP5681309B2 (ja) * 2014-03-18 2015-03-04 キヤノン株式会社 決定方法、露光方法及びプログラム
US9939732B2 (en) * 2015-10-27 2018-04-10 Cymer, Llc Controller for an optical system
CN107438163B (zh) * 2017-07-31 2020-07-07 努比亚技术有限公司 一种拍照方法、终端及计算机可读存储介质
JP7390804B2 (ja) * 2019-05-17 2023-12-04 キヤノン株式会社 露光装置、露光方法、決定方法および物品製造方法
CN110426831B (zh) * 2019-06-17 2021-08-03 华南师范大学 一种聚焦照明系统及方法
CN120848125A (zh) * 2025-04-02 2025-10-28 全智芯(上海)技术有限公司 用于光源掩模优化的方法、设备、存储介质及程序产品

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261004A (ja) 2001-01-29 2002-09-13 Internatl Business Mach Corp <Ibm> 照明及びレチクルの最適化により、印刷ラインの形状歪みを最小化するシステム及び方法
JP3342631B2 (ja) * 1995-06-06 2002-11-11 インターナショナル・ビジネス・マシーンズ・コーポレーション 照明を最適化する方法および投影結像装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057709B2 (en) 2003-12-04 2006-06-06 International Business Machines Corporation Printing a mask with maximum possible process window through adjustment of the source distribution

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3342631B2 (ja) * 1995-06-06 2002-11-11 インターナショナル・ビジネス・マシーンズ・コーポレーション 照明を最適化する方法および投影結像装置
JP2002261004A (ja) 2001-01-29 2002-09-13 Internatl Business Mach Corp <Ibm> 照明及びレチクルの最適化により、印刷ラインの形状歪みを最小化するシステム及び方法

Also Published As

Publication number Publication date
US8450031B2 (en) 2013-05-28
KR20120022665A (ko) 2012-03-12
US20120052448A1 (en) 2012-03-01
TWI428711B (zh) 2014-03-01
TW201219995A (en) 2012-05-16
JP2012054426A (ja) 2012-03-15
JP5513325B2 (ja) 2014-06-04

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