TWI427711B - 微機電積體電路接合方法 - Google Patents

微機電積體電路接合方法 Download PDF

Info

Publication number
TWI427711B
TWI427711B TW096125103A TW96125103A TWI427711B TW I427711 B TWI427711 B TW I427711B TW 096125103 A TW096125103 A TW 096125103A TW 96125103 A TW96125103 A TW 96125103A TW I427711 B TWI427711 B TW I427711B
Authority
TW
Taiwan
Prior art keywords
integrated circuit
substrate
print head
bonding
tape
Prior art date
Application number
TW096125103A
Other languages
English (en)
Other versions
TW200901338A (en
Inventor
Roger Mervyn Lloyd Foote
Kia Silverbrook
Original Assignee
Silverbrook Res Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silverbrook Res Pty Ltd filed Critical Silverbrook Res Pty Ltd
Publication of TW200901338A publication Critical patent/TW200901338A/zh
Application granted granted Critical
Publication of TWI427711B publication Critical patent/TWI427711B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/145—Arrangement thereof
    • B41J2/155—Arrangement thereof for line printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1607—Production of print heads with piezoelectric elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1623—Manufacturing processes bonding and adhesion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1626—Manufacturing processes etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1631—Manufacturing processes photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1632—Manufacturing processes machining
    • B41J2/1634—Manufacturing processes machining laser machining
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1635—Manufacturing processes dividing the wafer into individual chips
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Measuring Or Testing Involving Enzymes Or Micro-Organisms (AREA)

Description

微機電積體電路接合方法
本發明係有關於微機電(MEMS)積體電路的製造及接合。其已主要被發展來促進自複數個此類列印噴頭積體電路中建構列印噴頭。
本案申請人已說明頁寬噴墨列印噴頭之前如何可自複數個相鄰的列印噴頭積體電路(也稱為列印噴頭IC、列印噴頭晶片及列印噴頭晶粒)中建構出來。如於例如是申請人於2004年12月12日所申請之美國申請案第11/014732號(其內容在此併入做為參考)所述，頁寬列印噴頭通常包含藉由黏性中間層而附著於液晶聚合物(LCP)墨水歧管之複數個相鄰的列印噴頭IC，此黏性中間層係夾於LCP墨水歧管與列印噴頭IC之間。此黏性中間層典型上為雷射鑽出的環氧塗佈聚合物膜。
此類列印噴頭的建構出現一些設計挑戰。首先，列印噴頭IC必須高精確地嵌置於聚合物膜上，使得此膜中的雷射鑽孔係與列印噴頭IC中的背側墨水供應通道相對準。其次，用於列印噴頭IC的微機電(MEMS)製程應該較佳地以促進接合至中間層上的此種方式而呈現給IC。
至今，申請人已說明如何可實施列印噴頭晶圓的背側微機電處理，以產生個別的列印噴頭IC(見例如是美國(US)專利第6846692號，其內容在此併入做為參考)。在背側微機電處理期間，會將晶圓的背側研磨成想要的晶圓厚度(典型為100至300微米)，且墨水供應通道係自晶圓的背側蝕刻，以形成背側(其接收墨水)，與晶圓的前側上之噴嘴組件之間的流體連接。此外，背側微機電處理界定晶圓中的切片跡道(dicing street)，使得可將晶圓分離成個別的列印噴頭IC。最後，晶圓中的任何光阻係使用氧化電漿來予以灰除。雖然背側微機電處理典型上係在完成所有前側的微機電製造步驟(其中噴嘴組件係建構於晶圓的前側上)之後實施，但是可改變背側微機電處理步驟的確切順序。
在US 6846692中所述的程序中，個別的列印噴頭IC係經由背側而最終嵌置於處理機構上。處理機構可為玻璃操作晶圓，列印噴頭IC係經由可鬆開的黏著膠帶(例如，紫外線鬆開膠帶或熱鬆開膠帶)而附著於此。另一種是，處理機構可為晶圓膜框，列印噴頭IC係附著於由晶圓膜框所支撐之切片膠帶。對於熟習此項技術者而言，晶圓膜框配置將是熟知的。
列印噴頭IC可由處理機構(例如，使用機器人)來予以個別地取出，且係直接封裝或接合至中間基板，以建構列印噴頭。US 6846692說明真空吸台如何可使用於與往復移動的x－y晶圓台及紫外線燈/掩罩結合，以自玻璃操作晶圓中移除個別的列印噴頭IC。
然而，US 6846692中所述的程序之問題為個別的列印噴頭IC必須自處理機構中移除，然後對準，且高精確地接合至中間基板。當IC的機器人處理協助來改善對準精確性時，此種程序中會有不可避免的對準漏失。
將想要提供自處理機構中移除微機電裝置(如列印噴頭IC)的程序，當接合至另外基板(如上述的中間基板)時，這可促進裝置的對準。
另外將想要提供列印噴頭建構的程序，其促進另一非聚合物的中間基板之使用。聚合物的黏著層為便宜且方便處理，但是相對於矽列印噴頭IC及LCP墨水供應歧管會遭受相當高的熱膨脹。在建構期間，用於中間基板之相當高的熱膨脹係數會使對準問題惡化，且甚至在列印噴頭壽命的持續期間，會導致對準的漏失。
在第一觀點中，本發明提出一種積體電路與基板之接合方法，此積體電路為複數個積體電路的其中之一，各積體電路具有可鬆開地附著於膜框膠帶之各自的前側，此膜框膠帶係藉由晶圓膜框來予以支撐，此方法包含下列步驟：(a)將基板設置於此積體電路的背側處；(b)將接合工具設置於此膜框膠帶的區域上，此區域係與此積體電路相對準；以及(c)自此接合工具，經由此膜框膠帶及此積體電路，施加接合力於此基板上，藉此使此積體電路的此背側接合至此基板。
在另外的觀點中，係提出一種方法，更包含下列步驟：自此膠帶移除此接合工具。
選擇上，此膜框膠帶為紫外線鬆開膠帶。
在另外的觀點中，係提出一種方法，更包含下列步驟：將此膜框膠帶的此區域曝露於紫外線輻射，且自此膠帶鬆開此經接合的積體電路。
選擇上，此積體電路為微機電(MEMS)積體電路。
選擇上，此積體電路為列印噴頭積體電路。
選擇上，重複步驟(a)至(c)，以建構列印噴頭於此基板上，此列印噴頭包含複數個相鄰的列印噴頭積體電路。
選擇上，此基板具有於其中所界定之複數個墨水供應孔，其中此等孔中的一個或多個孔係與此列印噴頭積體電路的背側中所界定之墨水供應通道相對準。
選擇上，此基板為中間基板，以使此列印噴頭積體電路附著於墨水供應歧管。
選擇上，此中間基板為黏著的聚合物膜。
選擇上，此中間基板為剛性構件，具有此列印噴頭積體電路及/或此墨水供應歧管之熱膨脹係數的約20%內之熱膨脹係數。
選擇上，此中間基板為玻璃構件。
選擇上，預處理此等積體電路中的各積體電路之背側，以接合至此中間基板。
選擇上，此背側包含氧化物層。
選擇上，此氧化物層係以液體氨來予以預處理。
在第二觀點中，本發明提出一種列印噴頭之建構方法，此列印噴頭使用複數個列印噴頭積體電路，此等列印噴頭積體電路中的各列印噴頭積體電路具有可鬆開地附著於膜框膠帶之各自的前側，此膜框膠帶係藉由晶圓膜框來予以支撐，此方法包含下列步驟：(a)將基板設置於此列印噴頭積體電路的背側處；(b)將接合工具設置於此膜框膠帶的區域上，此區域係與此列印噴頭積體電路相對準；(c)自此接合工具，經由此膜框膠帶及此列印噴頭積體電路，施加接合力於此基板上，藉此將此列印噴頭積體電路的此背側接合至此基板；以及(d)重複步驟(a)至(c)，以建構列印噴頭於此基板上，其中此列印噴頭包含預定數目之相鄰的列印噴頭積體電路。
選擇上，此基板包含於其中所界定之複數個墨水供應孔，此等孔中的各孔係與此列印噴頭的背側中所界定之墨水供應通道相對準。
選擇上，此基板為玻璃構件。
在另外的觀點中，係提出一種方法，更包含下列步驟：將此基板接合至墨水供應歧管，使得此基板夾於此列印噴頭與此墨水供應歧管之間。
選擇上，此列印噴頭為頁寬的噴墨列印噴頭。
 列印噴頭組件
用於頁寬印表機(未顯示)之所建構的列印噴頭組件22係顯示於圖1至4中。列印噴頭組件22一般包含伸長上部構件62，其具有複數個突出的U型扣件(clip)63。這些扣件63係由形成於印表機的主體(未顯示)中之銜套(未顯示)來予以扣住，以使列印噴頭組件22固定於此。
上部構件62具有複數個饋入管64，其用以自印表機中的墨水槽(未顯示)中接收墨水。饋入管64可具有外表塗佈，以防止墨水漏失。
上部構件62係由液晶聚合物(LCP)所構成，其提供一些優點。其可被模造成使得熱膨脹係數(CTE)與矽的熱膨脹係數類似。將瞭解到的是，列印噴頭積體電路74(於底下討論)與下面的模造之CTE的任何顯著差異會造成整個結構彎曲。LCP也具有相當高的硬度，模數典型上為如聚碳酸酯、苯乙烯、尼龍、PET及聚丙烯之「正常塑膠」的5倍。
如圖2中所最佳顯示，上部構件62具有開口通道組構，其用來容納下部構件65，下部構件65係經由黏性膜66而接合於此。下部構件65也由LCP所構成，且具有沿著其長度所形成之複數個墨水通道67。各墨水通道67自饋入管64中的其中之一接收墨水，且沿著列印噴頭組件22的長度分佈墨水。通道為1 mm寬，且由0.75 mm厚壁來予以分離。
在所顯示的實施例中，下部構件65具有沿著其長度延伸之五個通道67。各通道67僅自五個饋入管64中的其中之一接收墨水。
在各通道67的底部中為一連串等間隔的孔69(最佳於圖3中看出)，以在下部構件65的底部表面中產生五列的孔69。中間列的孔69沿著正位於列印噴頭IC 74上之下部構件65的中央線延伸。
參照圖4，列印噴頭IC 74係藉由聚合物密封膜71而嵌置於下部構件65的下側。此膜可為如PET或聚硫碸(polysulphone)膜的熱塑性膜，或其可以熱固性膜的形式，如藉由AL技術及Rogers公司所製造的熱固性膜。聚合物密封膜71於中央網狀物的兩側上為具有黏著層之疊層，且疊置於下部構件65的下側上。如圖3中所顯示，複數個孔72為經過黏著膜71而雷射鑽孔的，以與用於列印噴頭IC 74與通道67之間的流體傳輸之中心配置的墨水輸送位置(孔69的中間列及導管70的末端)相符。
列印噴頭IC 74係配置成水平地延伸過列印噴頭組件22的寬度。為了達成此，個別的列印噴頭IC 74係以相鄰配置而連結在一起，以形成跨越黏著層71的表面之列印噴頭56，如圖2及3中所顯示。
如申請人於2004年12月12日所申請之較早的美國申請案第11/014732號(代理人文件編號RRC020US)中所述，列印噴頭IC 74可藉由將IC加熱至黏著層的熔點之上而附著於聚合物密封膜71，然後將其按壓至密封膜71。另一種是，在各IC之下的黏著層可在將其壓成模之前，以雷射來予以熔化。另一種選擇為在將IC按壓至膜71之前，同時加熱IC(未到黏著熔點之上)及黏著層。如以上所略為提及的，此列印噴頭的製造方法會有固有的對準問題。
各列印噴頭IC 74接著附著及對準於聚合物密封膜71的表面，撓性PCB 79(見圖4)係沿著IC 74的邊緣附著，使得控制訊號及電力可供應給IC上的接合墊，且控制及運作噴墨噴嘴。如圖1中更清楚地顯示，撓性PCB 79包覆在列印噴頭組件22的周圍。
撓性PCB 79也可具有沿著其長度而配置的複數個解耦電容器81，係用於控制所接收到的電力及資料訊號。如圖2中所最佳顯示，撓性PCB 79具有沿著其長度而形成的複數個電氣接點180，係用於接收來自印表機的控制電路之電力及/或資料訊號。複數個孔80也沿著撓性PCB 79的末端邊緣形成，其提供使撓性PCB附著於印表機中的相配連接器之機構。
如圖4中所顯示，媒介物擋板82保護列印噴頭IC 74免於因與通過媒介物接觸而會發生之損壞。媒介物擋板82經由適當的扣件鎖固配置或經由黏著劑而附著於列印噴頭IC 74的上游之上部構件62。當以此方式附著時，列印噴頭IC 74設置於媒介物擋板82的表面下，而離開通過媒介物的路徑。
US 6846692中所述的背側微機電(MEMS)處理圖5至14概述用於製造列印噴頭IC 74之典型的背側微機電處理步驟，如美國專利第6846692號(其內容在此併入做為參考)中所述。在圖5中的210所繪示之初始步驟中，矽晶圓212係設置成具有前側216，微機電層214中的複數個微機電噴嘴組件218係形成於前側216上。微機電噴嘴組件218典型上包含犧牲材料，其用以填充噴嘴室。
保護層220係插置於噴嘴組件218之間。此保護層220典型上為相當厚的層(例如1至10微米)之犧牲材料(如光阻)，在製造微機電噴嘴組件218之後，保護層220係旋轉至上前側216。光阻被紫外線固化及/或硬烤，以產生適用於附著至玻璃操作晶圓之剛性且耐久性的保護塗佈。
以黏著膠帶222的形式之第一夾持機構係接合至微機電層214，如圖6中所繪示。膠帶222藉由可固化黏著劑而接合至層214。此黏著劑可以當曝露於紫外線(UV)光或熱時，其喪失其黏著性或「膠黏性」的方式來予以固化。雖然將瞭解到的是，熱鬆開膠帶同樣適用於用來當作第一夾持機構，但是在此的特定實施例中所述之膠帶222為紫外線鬆開膠帶。
如圖7中所顯示，以玻璃、石英、氧化鋁或其他操作晶圓的形式之第一操作晶圓224係固定於膠帶222。然後，翻轉包含具有微機電層214、膠帶222及玻璃晶圓224的矽晶圓212之疊層226，以曝露此晶圓之相反的背側228。
然後，矽晶圓212的背側228係藉由將表面228.1背面研磨而變薄，如圖8中所繪示。晶圓變薄包括電漿變薄，以移除起因於背面研磨所產生的任何表面裂縫或凹陷。
然後，如圖9中所繪示，矽晶圓212為自背側228經過晶圓所蝕刻之深度矽，以將晶圓212切片，且形成個別積體電路74。在圖9中，雖然將瞭解到的是，各IC典型上包括配置於列中的陣列(例如大於200)噴嘴組件，但是各IC 74僅有與其中對應的一個微機電噴嘴組件218。
在與自晶圓212的背側228中蝕刻切片跡道之同時，也可蝕刻墨水供應通道，以產生各噴嘴組件218的流體連接。
緊接背側蝕刻的是，且如圖10中所繪示，以第二黏著膠帶232(例如紫外線鬆開膠帶或熱鬆開膠帶)的形式之第二夾持機構係接合至晶圓212的背側表面228.1，且第二操作晶圓234係接合至膠帶232。
在附著第二操作晶圓234之後，會移除第一膠帶222及玻璃晶圓224，如由圖11中的箭頭236所概略地繪示。膠帶222可藉由將其曝露於紫外光來予以移除，紫外光係經由玻璃層224而投射於膠帶222上，如由箭頭238所繪示。將瞭解到的是，玻璃晶圓224對於紫外光為透明的。反之，矽晶圓212對於紫外光為不透明的，使得當膠帶222曝露於紫外光時，晶圓212的另一側上之膠帶232不受紫外光的影響。
參照圖12，一旦已移除膠帶222及玻璃晶圓224，會翻轉包含具有微機電層214、第二膠帶232及玻璃晶圓234的矽晶圓之疊層240，以曝露保護層220。
參照圖13，保護層220然後係藉由於氧電漿中灰化來予以移除。這樣會鬆開微機電噴嘴組件218，且完成IC 74的分離。在與移除保護層220的同時，也會移除任何其他曝露的犧牲材料(其自前側的微機電製造所遺留)。
然後，疊層240係設置於往復移動的xy晶圓台(未顯示)上，如由圖14中的箭頭244所繪示。當想要移除各IC 74時，各IC 74係經由掩罩250而曝露於紫外光，如由箭頭246所表示。這樣每次可使局部位於一特定IC 74之下的膠帶之黏著劑固化，以使此IC藉由可包括真空吸台248的傳送機構而自膠帶232中移除。列印噴頭IC 74然後可藉由將複數個IC圍在一起而封裝及/或形成列印噴頭。
另一種背側微機電(MEMS)處理及列印噴頭建構
上述的背側微機電程序之缺點為列印噴頭IC 74必須個別地自第二操作晶圓234中移除，然後藉由將其附著於中間基板(如黏著膜71)而組裝成列印噴頭56。此程序有固有的對準難度。
圖15至19顯示背側微機電處理步驟的另一種順序，這樣可避免個別地自第二操作晶圓234中拾取IC 74，如圖14中所顯示。取而代之的是，IC 74係自晶圓膜框300而直接接合至中間基板302上，如將於底下更詳細地說明。
自圖13中所顯示的組件240開始，附著於第二操作晶圓234的列印噴頭IC 74陣列係嵌置於晶圓膜框300，如圖15中所顯示。各列印噴頭IC 74的前側216係附著於由晶圓膜框300所支撐的膜框膠帶301。當圖15中所顯示之微機電裝置218的尺寸過大時，將瞭解到的是，列印噴頭IC 74具有實質上平坦的前側216，其接合至膜框膠帶301。
第一膠帶222和第二膠帶232，與由晶圓膜框300所支撐的膜框膠帶301相配是重要的。因此，在此實施例中，較佳而言，第一膠帶222和第二膠帶232為熱鬆開膠帶(例如150℃的熱鬆開膠帶及170℃的熱鬆開膠帶)，而膜框膠帶301為紫外線鬆開膠帶。因此，列印噴頭IC 74陣列可嵌置於膜框膠帶301，然後具有第二膠帶232的第二操作晶圓234係藉由加熱而自此陣列中移除。
參照圖16，係顯示第二操作晶圓234(伴隨第二膠帶232)係自IC 74陣列的背側228中移除。這可藉由僅加熱熱鬆開膠帶232來予以達成。在此步驟之後，列印噴頭IC 74係經由其前側216而嵌置於膜框膠帶301。列印噴頭IC 74(其將附著於LCP構件65)的背側228係曝露出來且準備好用於接合。
在移除第二操作晶圓234及膠帶232之後，這些IC之曝露的背側228會被處理用於接下來的接合。例如，背側228可使用由Ziptronix公司所發展之專有的ZibondTM 接合程序而處理用於接合。此程序典型上需要以液體氨來予以處理之氧化物表面，其會製備接合至基板的範圍之表面。IC 74的背側228可在背側微機電處理的較早階段(例如，在圖8中所顯示的階段－亦即，在蝕刻背側切片跡道及墨水供應通道之前)，以氧化物層來予以塗佈。此背側氧化物層的氨處理然後可以嵌置於晶圓膜框300上的IC 74來予以實施。因為在背側處理與接下來的接合之間的IC 74有最小的處理，所以本發明特別適用於ZibondTM 接合程序。
另一種是，IC 74的背側228可使用更習知的黏著接合法，而遺留不處理，且接合至中間基板，如黏著膜71。
本發明的主要優點係藉由圖17至19所表示的步驟順序來予以達成。取代自晶圓膜框300中移除IC 74的是，背側228在仍附著於膜框膠帶301的時候，係直接接合至中間基板302。接合工具303可用來選擇且接合個別IC 74至中間基板302的預定位置上，如圖17中所顯示。與晶圓膜框300結合之接合工具303確保個別IC 74高精確的接合至中間基板302。
中間基板302可為稍早所述之雷射鑽出的黏著膜71。另一種是，中間基板302可為剛性的玻璃構件，其代替黏著膜71來使列印噴頭IC 74接合至LCP構件65。玻璃構件因為具有與LCP構件65和列印噴頭IC 74類似的熱膨脹係數，所以是有助益的。熟習者將瞭解到的是，玻璃構件可以與聚合物膜71的雷射鑽孔72相對應之墨水供應孔來予以預蝕刻。
因此，將瞭解到的是，本發明改善列印噴頭IC 74與中間基板302之對準。對準首先係藉由實施仍嵌置於晶圓膜框300上的列印噴頭IC 74之接合步驟來予以改善。其次，本發明促進除了稍早所述的聚合物黏著膜71之外的中間基板302之使用。在避免聚合物黏著膜71的使用中，會進一步使起因於不同的熱膨脹之對準誤差最小化。
一旦列印噴頭IC 74接合至中間基板302，會移除接合工具，且接合的IC 74會與膜框膠帶301分離。如圖18中所顯示，這可藉由選擇性地紫外線固化膠帶301的區域來予以達成。合適的掩罩304可使用於選擇性地紫外線固化。
最後，如圖19中所顯示，IC 74接合於此的中間基板302係完全與晶圓膜框300分離。圖17至19中所繪示的接合程序可沿著中間基板302的長度而重複，以自複數個相鄰的列印噴頭IC 74中建構出列印噴頭56。
一旦完全地建構出列印噴頭56，中間基板302的對面係附著於LCP構件65(如以上所述)，以形成列印噴頭組件22。
此領域中的平常工作者將察覺到的是，在不脫離如廣泛地說明的本發明之精神或範圍之下，如特定實施例中所顯示的本發明可做許多變化及/或修飾。因此，本發明無論從那方面係視為例示，而非限制。
22．．．印噴頭組件
56．．．列印噴頭
62．．．伸長上部構件
63．．．扣件
64．．．饋入管
65．．．下部構件
66．．．黏性膜
67．．．墨水通道
69．．．孔
70．．．導管
71．．．聚合物密封膜
72．．．孔
74．．．列印噴頭積體電路
79．．．撓性PCB
80．．．孔
81．．．解耦電容器
82．．．媒介物擋板
180．．．電氣接點
212．．．矽晶圓
214．．．微機電層
216．．．前側
218．．．微機電噴嘴組件
220．．．保護層
222．．．黏著膠帶
224．．．第一操作晶圓
226．．．疊層
228．．．背側
228.1．．．表面
232．．．第二黏著膠帶
234．．．第二操作晶圓
236．．．箭頭
238．．．箭頭
240．．．疊層
244．．．箭頭
246．．．箭頭
248．．．真空吸台
250．．．掩罩
300．．．晶圓膜框
301．．．膜框膠帶
302．．．中間基板
303．．．接合工具
304．．．掩罩
本發明的選用實施例現在將藉由僅參考附圖的範例來予以說明中，其中：圖1係列印噴頭組件的前透視圖；圖2係圖1中所顯示的列印噴頭組件之爆炸的前透視圖；圖3係圖1中所顯示的列印噴頭組件之爆炸的後透視圖；圖4係圖1中所顯示的列印噴頭組件之側截面圖；圖5顯示由保護層所保護之具有複數個噴嘴的晶圓組件；圖6顯示在將黏著膠帶附著於保護層之後之圖5的晶圓組件；圖7顯示在將操作晶圓附著於黏著膠帶之後之圖6的晶圓組件；圖8顯示用於背側處理而翻轉之圖7的晶圓組件；圖9顯示在背側處理之後之圖8的晶圓組件，其包括界定晶圓中的切片跡道(dicing street)；圖10顯示在使用黏著膠帶而附著背側操作晶圓之後之圖9的晶圓組件；圖11顯示在鬆開前側操作晶圓及膠帶之後之圖10的晶圓組件；圖12顯示翻轉之圖11的晶圓組件；圖13顯示在灰化保護層之後之圖12的晶圓組件；圖14顯示移除個別晶片之圖13的晶圓組件；圖15顯示嵌置於晶圓膜框而附著之圖13的晶圓組件；圖16顯示部分移除第二操作晶圓及膠帶之圖15的晶圓組件；圖17顯示接合至中間基板的列印噴頭積體電路；圖18顯示與膜框膠帶分離之接合的列印噴頭積體電路；以及圖19顯示與晶圓膜框分離之接合的列印噴頭積體電路。
74．．．列印噴頭積體電路
216．．．前側
218．．．微機電噴嘴組件
300．．．晶圓膜框
301．．．膜框膠帶
302．．．中間基板
303．．．接合工具

Claims (18)

  1. 一種積體電路與基板之接合方法，該積體電路為複數個積體電路的其中之一，各積體電路具有可鬆開地附著於膜框膠帶之各自的前側，該膜框膠帶係藉由晶圓膜框來予以支撐，該方法包含下列步驟：(a)將基板設置於該積體電路的背側處，其中該背側包含氧化物層；(b)將接合工具設置於該膜框膠帶的區域上，該區域係與該積體電路相對準；以及(c)自該接合工具，經由該膜框膠帶及該積體電路，施加接合力於該基板上，藉此使該積體電路的該背側接合至該基板；其中，該背側的氧化物層係以液體氨來予以預處理。
  2. 如申請專利範圍第1項之積體電路與基板之接合方法，更包含下列步驟：自該膠帶移除該接合工具。
  3. 如申請專利範圍第1項之積體電路與基板之接合方法，其中該膜框膠帶為紫外線鬆開膠帶。
  4. 如申請專利範圍第2項之積體電路與基板之接合方法，更包含下列步驟：將該膜框膠帶的該區域曝露於紫外線輻射，且自該膠帶鬆開該經接合的積體電路。
  5. 如申請專利範圍第1項之積體電路與基板之接合方法，其中該積體電路為微機電積體電路。
  6. 如申請專利範圍第1項之積體電路與基板之接合方法，其中該積體電路為列印噴頭積體電路。
  7. 如申請專利範圍第6項之積體電路與基板之接合方法，其中重複步驟(a)至(c)，以建構列印噴頭於該基板上，該列印噴頭包含複數個相鄰的列印噴頭積體電路。
  8. 如申請專利範圍第6項之積體電路與基板之接合方法，其中該基板具有於其中所界定之複數個墨水供應孔，其中該等孔中的一個或多個孔係與該列印噴頭積體電路的背側中所界定之墨水供應通道相對準。
  9. 如申請專利範圍第6項之積體電路與基板之接合方法，其中該基板為中間基板，以使該列印噴頭積體電路附著於墨水供應歧管。
  10. 如申請專利範圍第9項之積體電路與基板之接合方法，其中該中間基板為黏著的聚合物膜。
  11. 如申請專利範圍第9項之積體電路與基板之接合方法，其中該中間基板為剛性構件，具有該列印噴頭積體電路及/或該墨水供應歧管之熱膨脹係數的約20%內之熱膨脹係數。
  12. 如申請專利範圍第9項之積體電路與基板之接合方法，其中該中間基板為玻璃構件。
  13. 如申請專利範圍第9項之積體電路與基板之接合方法，其中預處理該等積體電路中的各積體電路之背側，以接合至該中間基板。
  14. 一種列印噴頭之建構方法，該列印噴頭使用複數個列印噴頭積體電路，該等列印噴頭積體電路中的各列印噴頭積體電路具有可鬆開地附著於膜框膠帶之各自的前側，該膜框膠帶係藉由晶圓膜框來予以支撐，該方法包含下列步驟：(a)將基板設置於該列印噴頭積體電路的背側處，其中該背側包含氧化物層；(b)將接合工具設置於該膜框膠帶的區域上，該區域係與該列印噴頭積體電路相對準；(c)自該接合工具，經由該膜框膠帶及該列印噴頭積體電路，施加接合力於該基板上，藉此將該列印噴頭積體電路的該背側接合至該基板；以及(d)重複步驟(a)至(c)，以建構列印噴頭於該基板上，其中，該氧化物層係以液體氨來予以預處理；及其中，該列印噴頭包含預定數目之相鄰的列印噴頭積體電路。
  15. 如申請專利範圍第14項之列印噴頭之建構方法，其中該基板包含於其中所界定之複數個墨水供應孔，該等孔中的各孔係與該列印噴頭的背側中所界定之墨水供應通道相對準。
  16. 如申請專利範圍第15項之列印噴頭之建構方法，其中該基板為玻璃構件。
  17. 如申請專利範圍第14項之列印噴頭之建構方 法，更包含下列步驟：將該基板接合至墨水供應歧管，使得該基板夾於該列印噴頭與該墨水供應歧管之間。
  18. 如申請專利範圍第14項之列印噴頭之建構方法，其中該列印噴頭為頁寬的噴墨列印噴頭。
TW096125103A 2007-06-20 2007-07-10 微機電積體電路接合方法 TWI427711B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/766,052 US7678667B2 (en) 2007-06-20 2007-06-20 Method of bonding MEMS integrated circuits

Publications (2)

Publication Number Publication Date
TW200901338A TW200901338A (en) 2009-01-01
TWI427711B true TWI427711B (zh) 2014-02-21

Family

ID=40136908

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096125103A TWI427711B (zh) 2007-06-20 2007-07-10 微機電積體電路接合方法

Country Status (2)

Country Link
US (3) US7678667B2 (zh)
TW (1) TWI427711B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI495570B (zh) * 2009-07-27 2015-08-11 Memjet Technology Ltd 具背側電連接之噴墨列印頭組件
US8403315B2 (en) * 2011-03-31 2013-03-26 Alta Devices, Inc. Film transfer frame
US20140038357A1 (en) * 2012-08-06 2014-02-06 Apple Inc. Singulated ic stiffener and de-bond process
WO2017107097A1 (en) * 2015-12-23 2017-06-29 Goertek.Inc Micro-led transfer method and manufacturing method
TW202114873A (zh) * 2019-06-03 2021-04-16 愛爾蘭商滿捷特科技公司 處理ｍｅｍｓ晶圓的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5476566A (en) * 1992-09-02 1995-12-19 Motorola, Inc. Method for thinning a semiconductor wafer
US6425971B1 (en) * 2000-05-10 2002-07-30 Silverbrook Research Pty Ltd Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes
TWI226813B (en) * 2002-08-02 2005-01-11 Matrics Inc Method and apparatus for high volume assembly of radio frequency identification tags
CN1966269A (zh) * 2001-03-27 2007-05-23 西尔弗布鲁克研究有限公司 具有由可弯曲通道保持的打印头模块的打印头组件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332563A (ja) * 2000-05-23 2001-11-30 Matsushita Electric Ind Co Ltd バイポーラトランジスタ及びその製造方法
US6848162B2 (en) * 2002-08-02 2005-02-01 Matrics, Inc. System and method of transferring dies using an adhesive surface
GB2426486A (en) * 2005-05-27 2006-11-29 Microsaic Systems Ltd Self-aligning micro-contact print engine
US20080242052A1 (en) * 2007-03-30 2008-10-02 Tao Feng Method of forming ultra thin chips of power devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5476566A (en) * 1992-09-02 1995-12-19 Motorola, Inc. Method for thinning a semiconductor wafer
US6425971B1 (en) * 2000-05-10 2002-07-30 Silverbrook Research Pty Ltd Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes
CN1966269A (zh) * 2001-03-27 2007-05-23 西尔弗布鲁克研究有限公司 具有由可弯曲通道保持的打印头模块的打印头组件
TWI226813B (en) * 2002-08-02 2005-01-11 Matrics Inc Method and apparatus for high volume assembly of radio frequency identification tags

Also Published As

Publication number Publication date
US8314008B2 (en) 2012-11-20
US7678667B2 (en) 2010-03-16
US8030175B2 (en) 2011-10-04
US20100151600A1 (en) 2010-06-17
TW200901338A (en) 2009-01-01
US20110318854A1 (en) 2011-12-29
US20080318352A1 (en) 2008-12-25

Similar Documents

Publication Publication Date Title
US10029466B2 (en) Ink-jet recording head, recording element substrate, method for manufacturing ink-jet recording head, and method for manufacturing recording element substrate
JP4594755B2 (ja) インクジェットプリントヘッドを作製する方法
JP2007055240A (ja) 液体吐出ヘッドの製造方法
TWI427711B (zh) 微機電積體電路接合方法
US8070969B2 (en) Method of fabricating microelectromechanical systems devices
JP7134831B2 (ja) 液体吐出ヘッドの製造方法
JP2007076226A (ja) 液滴吐出ヘッドおよびその製造方法
JP2003170590A (ja) 液体噴射ヘッド、及び、その製造方法
JP2730481B2 (ja) インクジェット記録ヘッドの製造方法
US11110706B2 (en) Liquid ejecting head and method of manufacturing liquid ejecting head
JP2001322276A (ja) インクジェット記録ヘッド、インクジェット記録装置及びヘッド作製方法
JP2006062148A (ja) シリコン構造体製造方法、モールド金型製造方法、シリコン構造体、インクジェット記録ヘッド、画像形成装置、及び、半導体装置
JP3311718B2 (ja) 流体噴射装置の製造方法
JP2008201088A (ja) 液滴吐出ヘッド及びその製造方法、貼り合わせ構造及び貼り合わせ方法
US8152278B2 (en) Liquid jet head chip and manufacturing method therefor
JPH10100416A (ja) インクジェット記録ヘッドおよびその製造方法
JP2007250761A (ja) 半導体デバイスの製造方法
JPH08267764A (ja) インクジェット記録ヘッドの製造方法
JPH10128974A (ja) インクジェットプリンタヘッド
JP2002210987A (ja) インクジェットヘッド及びその製造方法
JPH11277753A (ja) サーマルインクジェットヘッドの製造方法
JP2005059349A (ja) インクジェット用記録ヘッド及びその製造方法、インクジェット記録カートリッジ、インクジェット記録装置、並びに、中空構造体の製造方法
JPH05229113A (ja) インクジェットヘッド
JPH07266567A (ja) インクジェット記録ヘッド及びその製造方法
JP2004216647A (ja) 液体吐出ヘッドの製造方法及びその方法に使用する治具