TWI425657B - 發出輻射之薄膜組件之製造方法及發出輻射之薄膜組件 - Google Patents
發出輻射之薄膜組件之製造方法及發出輻射之薄膜組件 Download PDFInfo
- Publication number
- TWI425657B TWI425657B TW098137345A TW98137345A TWI425657B TW I425657 B TWI425657 B TW I425657B TW 098137345 A TW098137345 A TW 098137345A TW 98137345 A TW98137345 A TW 98137345A TW I425657 B TWI425657 B TW I425657B
- Authority
- TW
- Taiwan
- Prior art keywords
- nanorod
- substrate
- semiconductor layer
- layer sequence
- manufacturing
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 67
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000010409 thin film Substances 0.000 title description 8
- 239000002073 nanorod Substances 0.000 claims description 169
- 239000004065 semiconductor Substances 0.000 claims description 123
- 239000000758 substrate Substances 0.000 claims description 99
- 239000000463 material Substances 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 17
- 230000005855 radiation Effects 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 9
- 230000006378 damage Effects 0.000 claims description 7
- 230000005670 electromagnetic radiation Effects 0.000 claims description 6
- 239000004038 photonic crystal Substances 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000003631 wet chemical etching Methods 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 33
- 229910002601 GaN Inorganic materials 0.000 description 10
- 230000035882 stress Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 210000001161 mammalian embryo Anatomy 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 210000002257 embryonic structure Anatomy 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 230000005226 mechanical processes and functions Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008056175A DE102008056175A1 (de) | 2008-11-06 | 2008-11-06 | Verfahren zur Herstellung eines Strahlung emittierenden Dünnschichtbauelements und Strahlung emittierendes Dünnschichtbauelement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201027805A TW201027805A (en) | 2010-07-16 |
| TWI425657B true TWI425657B (zh) | 2014-02-01 |
Family
ID=41698122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098137345A TWI425657B (zh) | 2008-11-06 | 2009-11-04 | 發出輻射之薄膜組件之製造方法及發出輻射之薄膜組件 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8420439B2 (de) |
| EP (1) | EP2342764B1 (de) |
| JP (1) | JP5740309B2 (de) |
| KR (1) | KR101678236B1 (de) |
| CN (1) | CN102210032B (de) |
| DE (1) | DE102008056175A1 (de) |
| TW (1) | TWI425657B (de) |
| WO (1) | WO2010051790A1 (de) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010008905B3 (de) * | 2010-02-23 | 2011-06-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Bestimmung einer Struktur eines Halbleitermaterials mit vordefinierten elektrooptischen Eigenschaften sowie Verfahren zu dessen Herstellung |
| JP5620724B2 (ja) * | 2010-06-22 | 2014-11-05 | スタンレー電気株式会社 | 半導体素子の製造方法、積層構造体の製造方法、半導体ウエハおよび積層構造体。 |
| DE102010046792A1 (de) | 2010-09-28 | 2012-03-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
| TWI478378B (zh) * | 2010-10-25 | 2015-03-21 | Advanced Optoelectronic Tech | 發光二極體及其製造方法 |
| GB2485346A (en) * | 2010-11-08 | 2012-05-16 | Nanogan Ltd | High quality devices growth on pixelated patent templates |
| KR101202731B1 (ko) | 2011-04-27 | 2012-11-20 | 영남대학교 산학협력단 | 수직형 발광 다이오드의 제조 방법 |
| DE102011117381A1 (de) * | 2011-10-28 | 2013-05-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| CN105659383A (zh) | 2013-10-21 | 2016-06-08 | 传感器电子技术股份有限公司 | 包括复合半导体层的异质结构 |
| CN104681688B (zh) | 2013-11-27 | 2018-09-11 | 清华大学 | 一种微结构层及发光二极管 |
| JP2016194697A (ja) * | 2016-05-10 | 2016-11-17 | ウシオ電機株式会社 | 蛍光光源装置 |
| JP7090861B2 (ja) * | 2017-02-28 | 2022-06-27 | 学校法人上智学院 | 光デバイスおよび光デバイスの製造方法 |
| JP7333666B2 (ja) * | 2017-02-28 | 2023-08-25 | 学校法人上智学院 | 光デバイスおよび光デバイスの製造方法 |
| FR3074960B1 (fr) * | 2017-12-07 | 2019-12-06 | Soitec | Procede de transfert d'une couche utilisant une structure demontable |
| KR20210155693A (ko) * | 2020-06-16 | 2021-12-23 | 삼성전자주식회사 | 플랫 탑을 갖는 나노로드 반도체층과 이를 이용한 마이크로 led와 이를 포함하는 화소 플레이트와 이를 포함하는 디스플레이 장치와 전자장치들 |
| CN112993103B (zh) * | 2021-02-08 | 2022-06-03 | 广东省科学院半导体研究所 | 可剥离氮化物结构及其剥离方法 |
| DE102022129759A1 (de) | 2022-11-10 | 2024-05-16 | Ams-Osram International Gmbh | Verfahren zur herstellung eines optoelektronischen halbleiterbauelements und optoelektronisches halbleiterbauelement |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6184144B1 (en) * | 1997-10-10 | 2001-02-06 | Cornell Research Foundation, Inc. | Methods for growing defect-free heteroepitaxial layers |
| US6596377B1 (en) * | 2000-03-27 | 2003-07-22 | Science & Technology Corporation @ Unm | Thin film product and method of forming |
| EP1422748A1 (de) * | 2001-08-01 | 2004-05-26 | Nagoya Industrial Science Research Institute | Gruppe-iii-nitrid-halbleiterfilm und verfahren zu seiner herstellung |
| US20050082546A1 (en) * | 2003-10-21 | 2005-04-21 | Samsung Electronics Co., Ltd. | Light-emitting device and method of manufacturing the same |
| US20060270074A1 (en) * | 2005-05-24 | 2006-11-30 | Kim Jong W | Light emitting device having nano structures for light extraction |
| US20070093037A1 (en) * | 2005-10-26 | 2007-04-26 | Velox Semicondutor Corporation | Vertical structure semiconductor devices and method of fabricating the same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH088217B2 (ja) | 1991-01-31 | 1996-01-29 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体の結晶成長方法 |
| DE10056645B4 (de) | 2000-11-09 | 2007-03-08 | Azzurro Semiconductors Ag | Verfahren zur Herstellung von rißfreien, planaren Gruppe-III-N,Gruppe III-V-N und Metall-Stickstoff Bauelementestrukturen auf Si-Substraten mittels epitaktischer Methoden |
| DE102004038573A1 (de) | 2004-08-06 | 2006-03-16 | Azzurro Semiconductors Ag | Verfahren zum epitaktischen Wachstum dicker, rissfreier Gruppe-III-Nitrid Halbleiterschichten mittels metallorganischer Gasphasenepitaxie auf Si oder SIC |
| TWI500072B (zh) | 2004-08-31 | 2015-09-11 | Sophia School Corp | 發光元件之製造方法 |
| KR100588377B1 (ko) * | 2005-05-10 | 2006-06-09 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광다이오드 소자 및 그 제조방법 |
| US8163575B2 (en) * | 2005-06-17 | 2012-04-24 | Philips Lumileds Lighting Company Llc | Grown photonic crystals in semiconductor light emitting devices |
| KR20070021671A (ko) * | 2005-08-19 | 2007-02-23 | 서울옵토디바이스주식회사 | 나노막대들의 어레이를 채택한 발광 다이오드 및 그것을제조하는 방법 |
| US8022432B2 (en) * | 2005-08-19 | 2011-09-20 | Lg Display Co., Ltd. | Light-emitting device comprising conductive nanorods as transparent electrodes |
| JP2008066590A (ja) * | 2006-09-08 | 2008-03-21 | Matsushita Electric Works Ltd | 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法 |
| GB0701069D0 (en) * | 2007-01-19 | 2007-02-28 | Univ Bath | Nanostructure template and production of semiconductors using the template |
| GB0702560D0 (en) * | 2007-02-09 | 2007-03-21 | Univ Bath | Production of Semiconductor devices |
-
2008
- 2008-11-06 DE DE102008056175A patent/DE102008056175A1/de not_active Withdrawn
-
2009
- 2009-10-19 JP JP2011533533A patent/JP5740309B2/ja not_active Expired - Fee Related
- 2009-10-19 EP EP09765009.7A patent/EP2342764B1/de not_active Not-in-force
- 2009-10-19 US US13/123,410 patent/US8420439B2/en not_active Expired - Fee Related
- 2009-10-19 KR KR1020117007892A patent/KR101678236B1/ko active IP Right Grant
- 2009-10-19 WO PCT/DE2009/001449 patent/WO2010051790A1/de active Application Filing
- 2009-10-19 CN CN200980144647.9A patent/CN102210032B/zh not_active Expired - Fee Related
- 2009-11-04 TW TW098137345A patent/TWI425657B/zh not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6184144B1 (en) * | 1997-10-10 | 2001-02-06 | Cornell Research Foundation, Inc. | Methods for growing defect-free heteroepitaxial layers |
| US6596377B1 (en) * | 2000-03-27 | 2003-07-22 | Science & Technology Corporation @ Unm | Thin film product and method of forming |
| EP1422748A1 (de) * | 2001-08-01 | 2004-05-26 | Nagoya Industrial Science Research Institute | Gruppe-iii-nitrid-halbleiterfilm und verfahren zu seiner herstellung |
| US20050082546A1 (en) * | 2003-10-21 | 2005-04-21 | Samsung Electronics Co., Ltd. | Light-emitting device and method of manufacturing the same |
| US20060270074A1 (en) * | 2005-05-24 | 2006-11-30 | Kim Jong W | Light emitting device having nano structures for light extraction |
| US20070093037A1 (en) * | 2005-10-26 | 2007-04-26 | Velox Semicondutor Corporation | Vertical structure semiconductor devices and method of fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010051790A1 (de) | 2010-05-14 |
| CN102210032B (zh) | 2014-07-16 |
| US20110215295A1 (en) | 2011-09-08 |
| JP5740309B2 (ja) | 2015-06-24 |
| TW201027805A (en) | 2010-07-16 |
| DE102008056175A1 (de) | 2010-05-12 |
| CN102210032A (zh) | 2011-10-05 |
| EP2342764A1 (de) | 2011-07-13 |
| KR20110084170A (ko) | 2011-07-21 |
| EP2342764B1 (de) | 2016-01-13 |
| US8420439B2 (en) | 2013-04-16 |
| JP2012507840A (ja) | 2012-03-29 |
| KR101678236B1 (ko) | 2016-11-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI425657B (zh) | 發出輻射之薄膜組件之製造方法及發出輻射之薄膜組件 | |
| US9871164B2 (en) | Nanostructure light emitting device and method of manufacturing the same | |
| TWI419352B (zh) | 半導體發光裝置中成長的光子晶體 | |
| US8384111B2 (en) | Method for forming sapphire substrate and semiconductor device | |
| US8709845B2 (en) | Solid state lighting devices with cellular arrays and associated methods of manufacturing | |
| US7485482B2 (en) | Method for manufacturing vertical group III-nitride light emitting device | |
| US7781242B1 (en) | Method of forming vertical structure light emitting diode with heat exhaustion structure | |
| CN102157644B (zh) | 具有垂直结构的发光二极管及其制造方法 | |
| US8071401B2 (en) | Method of forming vertical structure light emitting diode with heat exhaustion structure | |
| JP2009152474A (ja) | 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体発光素子の製造方法 | |
| TWI774759B (zh) | 發光元件及其製造方法 | |
| CN104160519A (zh) | 具有改善的光提取效率的发光二极管及其制造方法 | |
| WO2014123193A1 (ja) | 凹凸基板及び発光ダイオードの製造方法、並びに凹凸基板、発光ダイオード及び有機薄膜太陽電池 | |
| KR20120065610A (ko) | 질화물 반도체 발광소자 및 그 제조방법 | |
| JP2010135786A (ja) | 半導体発光素子及びその製造方法 | |
| KR101709431B1 (ko) | 반도체 발광 소자의 제조 방법, 및 반도체 발광 소자 | |
| KR20120085027A (ko) | 반도체 발광소자 및 그 제조방법 | |
| RU2819047C1 (ru) | Светоизлучающий диод | |
| KR100808197B1 (ko) | 수직형 발광 소자 및 그 제조방법 | |
| US8536585B2 (en) | Semiconductor light emitting device including anode and cathode having the same metal structure | |
| CN102005514A (zh) | 采用纳米压印技术的ⅲ族氮化物半导体发光装置 | |
| KR20120097583A (ko) | 고휘도 엘이디 용 기판 구조 및 그 기판에서의 에피택시 기반층 성장방법 | |
| TW202427820A (zh) | 發光元件 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |