TWI424598B - 具無機半導體連接層之堆疊電光主動有機二極體 - Google Patents
具無機半導體連接層之堆疊電光主動有機二極體 Download PDFInfo
- Publication number
- TWI424598B TWI424598B TW096125872A TW96125872A TWI424598B TW I424598 B TWI424598 B TW I424598B TW 096125872 A TW096125872 A TW 096125872A TW 96125872 A TW96125872 A TW 96125872A TW I424598 B TWI424598 B TW I424598B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- electro
- organic
- inorganic semiconductor
- electron affinity
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 239000010410 layer Substances 0.000 claims description 255
- 239000012044 organic layer Substances 0.000 claims description 91
- 239000000463 material Substances 0.000 claims description 78
- 230000007547 defect Effects 0.000 claims description 17
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 13
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 13
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 5
- 229910052723 transition metal Inorganic materials 0.000 claims description 5
- 150000003624 transition metals Chemical class 0.000 claims description 5
- -1 lanthanide chalcogen compound Chemical class 0.000 claims description 4
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 16
- 239000011368 organic material Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 13
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 238000002207 thermal evaporation Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 150000002602 lanthanoids Chemical class 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000002411 adverse Effects 0.000 description 6
- 150000004770 chalcogenides Chemical class 0.000 description 6
- 239000011147 inorganic material Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052768 actinide Inorganic materials 0.000 description 2
- 150000001255 actinides Chemical class 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- YWDGEUIDOIIHTK-UHFFFAOYSA-N selanylidenebarium Chemical compound [Ba]=[Se] YWDGEUIDOIIHTK-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical compound CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 206010039921 Selenium deficiency Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- RJWLRCHYHHXJLX-UHFFFAOYSA-N barium(2+);selenium(2-) Chemical class [Se-2].[Ba+2] RJWLRCHYHHXJLX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/19—Tandem OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP06117442 | 2006-07-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200814385A TW200814385A (en) | 2008-03-16 |
| TWI424598B true TWI424598B (zh) | 2014-01-21 |
Family
ID=38814433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096125872A TWI424598B (zh) | 2006-07-19 | 2007-07-16 | 具無機半導體連接層之堆疊電光主動有機二極體 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7960723B2 (https=) |
| EP (1) | EP2047538B1 (https=) |
| JP (1) | JP2010514092A (https=) |
| KR (1) | KR101423476B1 (https=) |
| CN (1) | CN101490867B (https=) |
| TW (1) | TWI424598B (https=) |
| WO (1) | WO2008010161A2 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2355625B1 (en) * | 2008-11-13 | 2015-10-07 | LG Chem, Ltd. | Low voltage-driven organic electroluminescence device, and manufacturing method thereof |
| KR101094282B1 (ko) * | 2009-12-04 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 유기 발광 장치 |
| WO2011162105A1 (en) * | 2010-06-25 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, display, and electronic device |
| CN104854723B (zh) * | 2012-12-17 | 2018-06-12 | 默克专利有限公司 | 无机阻挡层 |
| KR102113581B1 (ko) | 2013-05-22 | 2020-05-22 | 삼성디스플레이 주식회사 | 증착 장치, 그 방법 및 이를 이용한 양자점층 형성 방법 |
| KR102357063B1 (ko) * | 2015-07-20 | 2022-01-28 | 엘지디스플레이 주식회사 | 유기태양전지를 포함하는 유기발광다이오드 표시장치 |
| KR101845470B1 (ko) * | 2016-12-22 | 2018-04-05 | 홍익대학교 산학협력단 | 광전 소자 및 그 제조 방법 |
| KR20200009843A (ko) | 2018-07-20 | 2020-01-30 | 홍익대학교 산학협력단 | 광전 소자 및 그 제조 방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1651011A1 (en) * | 2003-07-02 | 2006-04-26 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent device and display using same |
| US20060087225A1 (en) * | 2004-10-22 | 2006-04-27 | Eastman Kodak Company | White OLEDs with a color-compensated electroluminescent unit |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2793383B2 (ja) * | 1991-06-24 | 1998-09-03 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
| US6765348B2 (en) | 2001-01-26 | 2004-07-20 | Xerox Corporation | Electroluminescent devices containing thermal protective layers |
| US6872472B2 (en) * | 2002-02-15 | 2005-03-29 | Eastman Kodak Company | Providing an organic electroluminescent device having stacked electroluminescent units |
| US7158161B2 (en) * | 2002-09-20 | 2007-01-02 | Matsushita Electric Industrial Co., Ltd. | Organic electroluminescence element and an exposure unit and image-forming apparatus both using the element |
| JP2004134395A (ja) | 2002-09-20 | 2004-04-30 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネッセンス素子およびそれを用いた露光装置ならびに画像形成装置 |
| US6818329B1 (en) | 2003-10-03 | 2004-11-16 | Eastman Kodak Company | Organic electroluminescent devices having a metal sub-layer within a hole-transporting region |
| JP4887602B2 (ja) * | 2003-12-16 | 2012-02-29 | 大日本印刷株式会社 | 有機機能素子の製造方法 |
| JP4447358B2 (ja) * | 2004-03-31 | 2010-04-07 | 大日本印刷株式会社 | 有機半導体素子 |
| JP4461367B2 (ja) | 2004-05-24 | 2010-05-12 | ソニー株式会社 | 表示素子 |
| US7126267B2 (en) | 2004-05-28 | 2006-10-24 | Eastman Kodak Company | Tandem OLED having stable intermediate connectors |
| TWI246353B (en) * | 2005-02-18 | 2005-12-21 | Au Optronics Corp | Organic light-emitting diode |
| US8013240B2 (en) * | 2005-11-02 | 2011-09-06 | The Trustees Of Princeton University | Organic photovoltaic cells utilizing ultrathin sensitizing layer |
-
2007
- 2007-07-12 US US12/373,555 patent/US7960723B2/en active Active
- 2007-07-12 EP EP07805130.7A patent/EP2047538B1/en active Active
- 2007-07-12 JP JP2009520103A patent/JP2010514092A/ja active Pending
- 2007-07-12 CN CN2007800273295A patent/CN101490867B/zh active Active
- 2007-07-12 KR KR1020097003333A patent/KR101423476B1/ko active Active
- 2007-07-12 WO PCT/IB2007/052785 patent/WO2008010161A2/en not_active Ceased
- 2007-07-16 TW TW096125872A patent/TWI424598B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1651011A1 (en) * | 2003-07-02 | 2006-04-26 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent device and display using same |
| US20060087225A1 (en) * | 2004-10-22 | 2006-04-27 | Eastman Kodak Company | White OLEDs with a color-compensated electroluminescent unit |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008010161A2 (en) | 2008-01-24 |
| JP2010514092A (ja) | 2010-04-30 |
| CN101490867A (zh) | 2009-07-22 |
| CN101490867B (zh) | 2012-01-25 |
| WO2008010161A3 (en) | 2008-04-03 |
| US20090321722A1 (en) | 2009-12-31 |
| US7960723B2 (en) | 2011-06-14 |
| EP2047538B1 (en) | 2016-01-06 |
| KR101423476B1 (ko) | 2014-07-28 |
| TW200814385A (en) | 2008-03-16 |
| EP2047538A2 (en) | 2009-04-15 |
| KR20090034986A (ko) | 2009-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100441415B1 (ko) | 광-전기적 디바이스들 | |
| TWI424598B (zh) | 具無機半導體連接層之堆疊電光主動有機二極體 | |
| CN100419519C (zh) | 发光器件 | |
| US20020176992A1 (en) | Highly transparent non-metallic cathodes | |
| WO2010013673A1 (ja) | 有機エレクトロルミネッセンス素子及びその製造方法 | |
| US20150155517A1 (en) | Organic light-emitting device | |
| CN101783396B (zh) | 有机电致发光器件、显示器和电子装置 | |
| JP5312949B2 (ja) | 電気活性デバイス用積層電極及びその製造方法 | |
| US7985966B2 (en) | Electro-optically active organic diode with short protection | |
| US20060202614A1 (en) | Organic electroluminescent devices and display device employing the same | |
| TWI447979B (zh) | 具有短路保護層的高摻雜電光主動有機二極體 | |
| KR102209498B1 (ko) | 도포형 유기 전계 발광 소자와, 이를 포함하는 표시장치 및 조명장치 | |
| KR20050114204A (ko) | 다중-픽셀 디스플레이 디바이스 및 그 형성 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |