TWI422692B - Cu-Co-Si based copper alloy for electronic materials and method for producing the same - Google Patents

Cu-Co-Si based copper alloy for electronic materials and method for producing the same Download PDF

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TWI422692B
TWI422692B TW099105394A TW99105394A TWI422692B TW I422692 B TWI422692 B TW I422692B TW 099105394 A TW099105394 A TW 099105394A TW 99105394 A TW99105394 A TW 99105394A TW I422692 B TWI422692 B TW I422692B
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crystal grain
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copper alloy
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TW201035338A (en
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Takuma Onda
Hiroshi Kuwagaki
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Jx Nippon Mining & Metals Corp
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/06Alloys based on copper with nickel or cobalt as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/02Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026Alloys based on copper

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Description

電子材料用Cu-Co-Si系銅合金及其製造方法Cu-Co-Si copper alloy for electronic materials and manufacturing method thereof

本發明係關於一種析出硬化型銅合金,尤其是關於一種適用於各種電子機器零件之Cu-Co-Si系銅合金。The present invention relates to a precipitation hardening type copper alloy, and more particularly to a Cu-Co-Si based copper alloy suitable for use in various electronic machine parts.

對於連接器,開關,繼電器,接腳,端子,導線架等之各種電子機器零件中所使用之電子材料用銅合金而言,係要求其兼具有高強度及高導電性(或導熱性)作為基本特性。近年來,電子零件之高積體化及小型化,薄壁化急速發展,與此相對應地,對於電子機器零件中所使用之銅合金的要求水準亦逐漸提高。For copper alloys for electronic materials used in various electronic equipment parts such as connectors, switches, relays, pins, terminals, lead frames, etc., it is required to have high strength and high electrical conductivity (or thermal conductivity). As a basic feature. In recent years, the electronic components have been highly integrated and miniaturized, and the thinning has progressed rapidly. Correspondingly, the requirements for copper alloys used in electronic component parts have gradually increased.

從高強度及高導電性之觀點,作為電子材料用銅合金,析出硬化型之銅合金的使用量逐漸増加,而代替以往磷青銅,黄銅等所代表之固溶強化型銅合金。析出硬化型銅合金,係藉由對經固溶處理之過飽和固溶體進行時效處理,使微細之析出物均勻分散,讓合金強度變高,同時減少銅中之固溶元素量,提升導電性。因此,可得到強度,彈性性能等之機械性質優異,且導電性,導熱性亦良好之材料。From the viewpoint of high strength and high electrical conductivity, as a copper alloy for electronic materials, the amount of precipitation hardening type copper alloy is gradually increased, and it is a solid solution strengthening type copper alloy represented by conventional phosphor bronze or brass. The precipitation hardening type copper alloy is obtained by subjecting the solution-treated supersaturated solid solution to aging treatment to uniformly disperse fine precipitates, thereby increasing the strength of the alloy, reducing the amount of solid solution elements in copper, and improving conductivity. . Therefore, a material excellent in mechanical properties such as strength and elastic properties, and excellent in electrical conductivity and thermal conductivity can be obtained.

析出硬化型銅合金中,一般被稱為卡遜系合金(corson alloy)之Cu-Ni-Si系銅合金,為兼具較高導電性,強度,及彎曲加工性之代表性銅合金,係業界目前正如火如荼進行開發之合金之一。此銅合金,係藉由在銅基質中析出微細之Ni-Si系金屬間化合物粒子,來謀求強度與導電率之提升。Among the precipitation-hardened copper alloys, Cu-Ni-Si-based copper alloys, generally called corson alloys, are representative copper alloys having high electrical conductivity, strength, and bending workability. One of the alloys currently being developed in the industry. In the copper alloy, fine Ni-Si-based intermetallic compound particles are precipitated in a copper matrix to improve strength and electrical conductivity.

有嘗試藉由在卡遜合金中添加Co來謀求特性之更加提升。There have been attempts to improve the characteristics by adding Co to the Carson alloy.

於專利文獻1中,記載有Co會和Ni同樣地與Si形成化合物,而提升機械強度,當對Cu-Co-Si系合金進行時效處理之情形,相較於Cu-Ni-Si系合金,機械強度,導電性均會變佳,若在成本上允許的話,可選擇Cu-Co-Si系合金,添加Co時之最佳添加量為0.05~2.0wt%。Patent Document 1 discloses that Co forms a compound with Si in the same manner as Ni, and the mechanical strength is improved. When the Cu-Co-Si alloy is aged, compared with the Cu-Ni-Si alloy, Both the mechanical strength and the electrical conductivity are improved. If the cost is allowed, the Cu-Co-Si alloy may be selected, and the optimum addition amount when adding Co is 0.05 to 2.0% by weight.

於專利文獻2,記載有應使鈷為0.5~2.5質量%。此係由於鈷含有量若少於0.5%,則含鈷之矽化物第2相的析出將會不充分,若超過2.5%,則將會析出過量的第2相粒子,造成加工性的降低,以及會使銅合金具有所不期望的強磁性特性。較佳為,鈷含有量為約0.5%~約1.5%,於最佳之形態中,鈷含有量為約0.7%~約1.2%。Patent Document 2 describes that cobalt should be made 0.5 to 2.5% by mass. If the cobalt content is less than 0.5%, the precipitation of the second phase of the cobalt-containing telluride will be insufficient, and if it exceeds 2.5%, an excessive amount of the second phase particles will be precipitated, resulting in a decrease in workability. And the copper alloy will have undesired strong magnetic properties. Preferably, the cobalt content is from about 0.5% to about 1.5%, and in the most preferred form, the cobalt content is from about 0.7% to about 1.2%.

專利文獻3所記載之銅合金,主要是為了要利用作為車載用及通信機用等之端子,連接器材料而開發,使Co濃度為0.5~2.5wt%之具有高導電性,中強度的Cu-Co-Si系合金。根據專利文獻3,將Co濃度規定在上述範圍的原因,係因為若添加量未達0.5質量%,則無法得到所欲之強度,若Co超過2.5質量%,則雖然可謀求高強度化,但是導電率顯著下降,並且熱加工性亦發生劣化,Co較佳為0.5~2.0質量%。The copper alloy described in Patent Document 3 is mainly developed for use as a terminal for automotive and communication equipment, and a connector material, and has a high conductivity and a medium strength Cu with a Co concentration of 0.5 to 2.5 wt%. - Co-Si alloy. According to Patent Document 3, the reason why the Co concentration is in the above range is that if the amount of addition is less than 0.5% by mass, the desired strength cannot be obtained, and if Co exceeds 2.5% by mass, the strength can be increased, but the strength can be increased. The electrical conductivity is remarkably lowered, and the hot workability is also deteriorated, and Co is preferably from 0.5 to 2.0% by mass.

專利文獻4所記載之銅合金,係為了實現高強度,高導電性及高彎曲加工性所開發出者,其將Co濃度規定在0.1~3.0wt%。記載有將Co濃度限定在此範圍的原因,係因為若未達此組成範圍時,則將不具有上述效果,又若添加超過該組成範圍時,則由於會在鑄造時生成結晶相,成為鑄造裂縫的原因,故不佳。The copper alloy described in Patent Document 4 has been developed to achieve high strength, high electrical conductivity, and high bending workability, and has a Co concentration of 0.1 to 3.0% by weight. The reason why the Co concentration is limited to this range is described, because if the composition range is not reached, the above effect will not be obtained, and if it exceeds the composition range, the crystal phase will be formed during casting, and casting will be performed. The cause of the crack is not good.

[專利文獻1]日本特開平11-222641號公報[Patent Document 1] Japanese Patent Laid-Open No. Hei 11-222641

[專利文獻2]日本特表2005-532477號公報[Patent Document 2] Japanese Patent Publication No. 2005-532477

[專利文獻3]日本特開2008-248333號公報[Patent Document 3] Japanese Patent Laid-Open Publication No. 2008-248333

[專利文獻4]日本特開平9-20943號公報[Patent Document 4] Japanese Patent Laid-Open Publication No. 9-20943

如上述,雖然已知添加Co有助於提升銅合金之特性,但是亦如上述先前技術文件所記載般,若使Co在高濃度側,則將會對製造性,合金特性帶來不良影響,於Cu-Co-Si系合金中,添加高濃度Co時之特性改良並未被充分研究。然而,係認為Co較Ni可更加提升機械強度及導電性,於Cu-Co-Si系合金中,藉由進一步提高Co濃度,有可能得到特性之提升。As described above, it is known that the addition of Co contributes to the improvement of the characteristics of the copper alloy. However, as described in the above prior art document, if Co is made on the high concentration side, it will adversely affect the manufacturability and alloy characteristics. In the Cu-Co-Si alloy, the improvement in characteristics when a high concentration of Co is added has not been sufficiently studied. However, it is considered that Co can improve mechanical strength and electrical conductivity more than Ni, and in the Cu-Co-Si alloy, it is possible to obtain an improvement in characteristics by further increasing the Co concentration.

另一方面,若進一步提高Co濃度,則必須更高溫來實施固溶處理,此種情形,再結晶粒容易粗大化。又,固溶處理步驟之前段所析出的結晶物、析出物等第二相粒子會成為障礙物而阻礙結晶粒之成長。因此,合金中之再結晶粒的不均一性將會變大,而發生合金之機械特性之偏差變大的問題。On the other hand, if the Co concentration is further increased, it is necessary to carry out a solution treatment at a higher temperature, and in this case, the recrystallized grains are easily coarsened. Further, the second phase particles such as crystals and precipitates precipitated in the previous stage of the solution treatment step become obstacles and hinder the growth of the crystal grains. Therefore, the heterogeneity of the recrystallized grains in the alloy will become large, and the problem that the variation in the mechanical properties of the alloy becomes large will occur.

因此,本發明之課題之一,係提供一種兼具高導電性、高強度及高彎曲加工性,且機械特性均一之含有高濃度Co之Cu-Co-Si系合金。又,本發明之另一課題,係提供一種用以製造此種Cu-Co-Si系合金之方法。Therefore, one of the problems of the present invention is to provide a Cu-Co-Si-based alloy which has high conductivity, high strength, and high bending workability and which has a high mechanical concentration and a high concentration of Co. Further, another object of the present invention is to provide a method for producing such a Cu-Co-Si alloy.

本發明人對減小再結晶粒之偏差的方法進行潛心研究後,得到如下見解:於含有高濃度Co之Cu-Co-Si系合金的製造中,在固溶處理步驟之前段,預先使微細之第二相粒子儘可能以等間隔而同樣地析出於銅母相中,藉此,即使以較高之溫度進行固溶處理,結晶粒因第二相粒子之釘扎效果(pinning effect)而不會變得太大,而且釘扎效果會均勻地作用於整個銅母相中,因此亦可使成長之再結晶粒的大小均一化。而且,已知其結果為可得到機械特性之偏差小的Cu-Co-Si系合金。The present inventors conducted intensive studies on a method for reducing the deviation of recrystallized grains, and obtained the following findings: in the production of a Cu-Co-Si-based alloy containing a high concentration of Co, in advance of the solution treatment step, fine The second phase particles are precipitated in the copper matrix phase at equal intervals as much as possible, whereby the crystal grains are subjected to a solution treatment at a relatively high temperature, and the crystal grains are pinned by the second phase particles. It does not become too large, and the pinning effect acts uniformly on the entire copper matrix, so that the size of the grown recrystallized grains can also be uniformized. Further, as a result, it is known that a Cu-Co-Si-based alloy having a small variation in mechanical properties can be obtained.

以上述見解為背景所完成之本發明之一形態,係一種電子材料用銅合金,其含有Co:0.5~4.0質量%、Si:0.1~1.2質量%,剩餘部分則由Cu及不可避免之雜質所構成,平均結晶粒徑為15~30μm,每觀察視野0.5mm2 之最大結晶粒徑與最小結晶粒徑之差的平均在10μm以下。One aspect of the present invention completed in the light of the above findings is a copper alloy for an electronic material containing Co: 0.5 to 4.0% by mass, Si: 0.1 to 1.2% by mass, and the balance being Cu and inevitable impurities. The average crystal grain size is 15 to 30 μm, and the average difference between the maximum crystal grain size and the minimum crystal grain size per 0.5 mm 2 of the observation field is 10 μm or less.

本發明之銅合金於一實施形態中,係一種電子材料用銅合金,含有Co:0.5~4.0質量%、Si:0.1~1.2質量%,並滿足以下(1)~(4)任一項以上之組成條件:In one embodiment, the copper alloy of the present invention is a copper alloy for an electronic material containing Co: 0.5 to 4.0% by mass and Si: 0.1 to 1.2% by mass, and satisfying any one of the following (1) to (4). Composition conditions:

(1)進一步含有最大為0.5質量%之Cr;(1) further containing a maximum of 0.5% by mass of Cr;

(2)進一步含有總計最大為0.5質量%之選自Mg、Mn、Ag及P之1種或2種以上的元素;(2) further containing one or two or more elements selected from the group consisting of Mg, Mn, Ag, and P in a total amount of 0.5% by mass;

(3)進一步含有總計最大為2.0質量%之選自Sn及Zn之1種或2種的元素;(3) further containing an element of one or two selected from the group consisting of Sn and Zn in a total amount of 2.0% by mass in total;

(4)進一步含有總計最大為2.0質量%之選自As、Sb、Be、B、Ti、Zr、Al及Fe之1種或2種以上的元素;(4) further containing one or two or more elements selected from the group consisting of As, Sb, Be, B, Ti, Zr, Al, and Fe in a total amount of 2.0% by mass in total;

且剩餘部分由Cu及不可避免之雜質所構成,平均結晶粒徑為15~30μm,每觀察視野0.5mm2 之最大結晶粒徑與最小結晶粒徑之差的平均在10μm以下。Further, the remainder is composed of Cu and unavoidable impurities, and the average crystal grain size is 15 to 30 μm, and the average difference between the maximum crystal grain size and the minimum crystal grain size of 0.5 mm 2 per observation field is 10 μm or less.

又,本發明於另一形態中,係一種銅合金之製造方法,其包含依序進行以下步驟:步驟1,對具有所需組成之鑄錠進行熔解鑄造;步驟2,以950℃~1050℃加熱1小時以上之後進行熱壓延,將熱壓延結束時之溫度設在850℃以上,將自850℃至400℃之平均冷卻速度設在15℃/s以上來進行冷卻;步驟3,進行加工度在85%以上之冷壓延;步驟4,進行以350~500℃加熱1~24小時之時效處理;步驟5,以950~1050℃進行固溶處理,將材料溫度自850℃下降至400℃時的平均冷卻速度設在15℃/s以上來進行冷卻;步驟6,進行隨意之冷壓延;步驟7,進行時效處理;步驟8,進行隨意之冷壓延。Further, in another aspect, the present invention provides a method for producing a copper alloy comprising the steps of: step 1: performing melt casting on an ingot having a desired composition; and step 2, at 950 ° C to 1050 ° C After heating for 1 hour or more, hot rolling is performed, the temperature at the end of hot rolling is set to 850 ° C or higher, and the average cooling rate from 850 ° C to 400 ° C is set to 15 ° C / s or more for cooling; Step 3, Cold rolling with a processing degree of 85% or more; step 4, aging treatment at 350 to 500 ° C for 1 to 24 hours; step 5, solution treatment at 950 to 1050 ° C, reducing the material temperature from 850 ° C to 400 The average cooling rate at ° C is set at 15 ° C / s or more for cooling; step 6, for random cold rolling; step 7, for aging treatment; step 8, for random cold rolling.

本發明並且於另一形態中,係一種具備有上述銅合金之伸銅品。According to still another aspect of the invention, there is provided a copper-clad product comprising the copper alloy.

本發明並且於另一形態中,係一種具備有上述銅合金之電子機器零件。According to still another aspect of the present invention, an electronic device component including the copper alloy is provided.

根據本發明,可得到一種具備可作為電子材料用銅合金之較佳之機械及電特性,且機械特性均一的Cu-Co-Si系合金。According to the present invention, a Cu-Co-Si alloy having a mechanical and electrical property which is preferable as a copper alloy for an electronic material and having uniform mechanical properties can be obtained.

(Co及Si之添加量)(addition of Co and Si)

Co及Si,可藉由實施適當之熱處理而形成金屬間化合物,不使導電率劣化而實現高強度化。Co and Si can form an intermetallic compound by performing appropriate heat treatment, and can achieve high strength without deteriorating the electrical conductivity.

若Co及Si之添加量分別為Co:未達0.5質量%、Si:未達0.1質量%,則無法得到所需之強度,相反地,若Co:超過4.0質量%、Si:超過1.2質量%,則雖可實現高強度化,但導電率明顯降低,且更會導致熱加工性劣化。因此,Co及Si之添加量為Co:0.5~4.0質量%及Si:0.1~1.2質量%。於Cu-Co-Si系,由於較Cu-Ni-Si系、Cu-Ni-Si-Co系更期望高強度,故較佳Co為高濃度,係在2.5%以上,更佳在3.2%以上。亦即,Co及Si之添加量較佳為Co:2.5~4.0質量%、Si:0.5~1.0質量%,更佳為Co:3.2~4.0質量%、Si:0.65~1.0質量%。When Co and Si are added in an amount of less than 0.5% by mass of Co and less than 0.1% by mass of Si, the desired strength cannot be obtained. Conversely, if Co: exceeds 4.0% by mass and Si: exceeds 1.2% by mass. In addition, although high strength can be achieved, the electrical conductivity is remarkably lowered, and the hot workability is deteriorated. Therefore, the addition amount of Co and Si is Co: 0.5 to 4.0% by mass and Si: 0.1 to 1.2% by mass. In the Cu-Co-Si system, since higher strength is required than the Cu-Ni-Si system and the Cu-Ni-Si-Co system, Co is preferably a high concentration, and is preferably 2.5% or more, more preferably 3.2% or more. . That is, the addition amount of Co and Si is preferably Co: 2.5 to 4.0% by mass, Si: 0.5 to 1.0% by mass, more preferably Co: 3.2 to 4.0% by mass, and Si: 0.65 to 1.0% by mass.

(Cr之添加量)(addition amount of Cr)

Cr於熔解鑄造時之冷卻過程中會優先析出於結晶粒界,因此可將粒界加以強化,於熱加工時不易產生裂縫,從而可抑制產率之降低。亦即,利用固溶處理等對熔解鑄造時粒界析出之Cr進行再固溶,而於後續之時效析出時,產生以Cr作為主成分之bcc結構的析出粒子或與Si之化合物。對於通常之Cu-Ni-Si系合金而言,所添加之Si量中,無助於時效析出之Si會於固溶於母相中之狀態下抑制導電率之上升,但藉由添加作為矽化物形成元素之Cr而進一步使矽化物析出,可減少固溶Si量,可在不損害強度下,提升導電率。然而,若Cr濃度超過0.5質量%,則由於容易形成粗大之第二相粒子,因而會損害產品特性。因此,於本發明之Cu-Co-Si系合金中,最大可添加0.5質量%之Cr。然而,若未達0.03質量%,則由於其效果較小,因而較佳為添加0.03~0.5質量%,更佳為添加0.09~0.3質量%。Cr is preferentially precipitated in the crystal grain boundary during the cooling process during melt casting, so that the grain boundary can be strengthened, and cracks are less likely to occur during hot working, thereby suppressing a decrease in yield. In other words, Cr which is precipitated at the grain boundary during the melt casting is re-dissolved by a solution treatment or the like, and when precipitated in the subsequent aging, a precipitated particle of a bcc structure containing Cr as a main component or a compound of Si is generated. In the conventional Cu-Ni-Si alloy, the amount of Si added does not contribute to the precipitation of Si, which inhibits the increase in conductivity in a state of being dissolved in the matrix phase, but is added as a deuteration. The Cr of the material forming element further precipitates the bismuth compound, thereby reducing the amount of solid solution Si and improving the conductivity without impairing the strength. However, when the Cr concentration exceeds 0.5% by mass, the coarse second phase particles are easily formed, which may impair the product characteristics. Therefore, in the Cu-Co-Si alloy of the present invention, 0.5% by mass of Cr can be added at the maximum. However, if it is less than 0.03 mass%, it is preferably added in an amount of 0.03 to 0.5% by mass, more preferably 0.09 to 0.3% by mass, because the effect is small.

(Mg、Mn、Ag及P之添加量)(addition amount of Mg, Mn, Ag, and P)

若添加微量之Mg、Mn、Ag及P,則會改善強度、應力緩和特性等之產品特性而不損害導電率。主要藉由使上述Mg、Mn、Ag及P固溶於母相而發揮添加之效果,但亦可藉由使第二相粒子中含有上述Mg、Mn、Ag及P而發揮更進一步之效果。然而,若Mg、Mn、Ag及P之濃度之總計超過0.5%,則特性改善效果將會飽和,且會損害製造性。因此,於本發明之Cu-Co-Si系合金中,最大可添加總計為0.5質量%之選自Mg、Mn、Ag及P中之1種或2種以上。然而,若未達0.01質量%,則由於其效果較小,因此較佳為總計添加0.01~0.5質量%,更佳為總計添加0.04~0.2質量%。When a small amount of Mg, Mn, Ag, and P is added, product characteristics such as strength and stress relaxation characteristics are improved without impairing electrical conductivity. The effect of addition is mainly achieved by solid-solving the Mg, Mn, Ag, and P in the matrix phase, but further effects can be exerted by including the Mg, Mn, Ag, and P in the second phase particles. However, if the total concentration of Mg, Mn, Ag, and P exceeds 0.5%, the property improvement effect will be saturated, and the manufacturability will be impaired. Therefore, in the Cu-Co-Si-based alloy of the present invention, one or two or more selected from the group consisting of Mg, Mn, Ag, and P may be added in a total amount of 0.5% by mass. However, if it is less than 0.01% by mass, since the effect is small, it is preferably added in a total amount of 0.01 to 0.5% by mass, more preferably 0.04 to 0.2% by mass in total.

(Sn及Zn之添加量)(addition amount of Sn and Zn)

Sn及Zn,添加微量亦可改善強度、應力緩和特性、鍍敷性等之產品特性而不會損害導電率。主要藉由使上述Sn及Zn固溶於母相而發揮添加之效果。然而,若Sn及Zn之總計超過2.0質量%,則特性改善效果將會飽和,且會損害製造性。因此,於本發明之Cu-Co-Si系合金中,最大可添加總計為2.0質量%之選自Sn及Zn中之1種或2種。然而,若未達0.05質量%,則由於其效果較小,因此較佳為總計添加0.05~2.0質量%,更佳為總計添加0.5~1.0質量%。When Sn and Zn are added in a small amount, product characteristics such as strength, stress relaxation property, and plating property can be improved without impairing electrical conductivity. The effect of addition is mainly exerted by dissolving the above Sn and Zn in the matrix phase. However, if the total of Sn and Zn exceeds 2.0% by mass, the property improvement effect will be saturated and the manufacturability will be impaired. Therefore, in the Cu-Co-Si-based alloy of the present invention, a total of 2.0% by mass or less of one or two selected from the group consisting of Sn and Zn can be added. However, if it is less than 0.05% by mass, since the effect is small, it is preferably added in an amount of 0.05 to 2.0% by mass in total, more preferably 0.5 to 1.0% by mass in total.

(As、Sb、Be、B、Ti、Zr、Al及Fe)(As, Sb, Be, B, Ti, Zr, Al, and Fe)

對於As、Sb、Be、B、Ti、Zr、Al及Fe而言,根據所要求之產品特性而對添加量進行調整,藉此改善導電率、強度、應力緩和特性、鍍敷性等之產品特性。主要藉由使上述As、Sb、Be、B、Ti、Zr、Al及Fe固溶於母相而發揮添加之效果,但亦可藉由使第二相粒子中含有上述As、Sb、Be、B、Ti、Zr、Al及Fe,或者形成新組成之第二相粒子而發揮更進一步之效果。然而,若該等元素之總計超過2.0質量%,則特性改善效果將會飽和,且會損害製造性。因此,於本發明之Cu-Co-Si系合金中,最大可添加總計為2.0質量%之選自As、Sb、Be、B、Ti、Zr、Al及Fe之1種或2種以上。然而,若未達0.001質量%,則由於其效果較小,因此較佳為總計添加0.001~2.0質量%,更佳為總計添加0.05~1.0質量%。For As, Sb, Be, B, Ti, Zr, Al, and Fe, the amount of addition is adjusted according to the required product characteristics, thereby improving products such as conductivity, strength, stress relaxation characteristics, and plating properties. characteristic. The effect of addition is mainly achieved by dissolving the above As, Sb, Be, B, Ti, Zr, Al, and Fe in the matrix phase, but the second phase particles may contain the above-mentioned As, Sb, and Be, B, Ti, Zr, Al, and Fe, or the formation of a second phase particle of a new composition exerts a further effect. However, if the total of the elements exceeds 2.0% by mass, the property improving effect will be saturated and the manufacturability may be impaired. Therefore, in the Cu-Co-Si-based alloy of the present invention, one or two or more selected from the group consisting of As, Sb, Be, B, Ti, Zr, Al, and Fe may be added in a total amount of 2.0% by mass. However, if it is less than 0.001% by mass, since the effect is small, it is preferably added in an amount of 0.001 to 2.0% by mass in total, and more preferably 0.05 to 1.0% by mass in total.

若上述Mg、Mn、Ag、P、Sn、Zn、As、Sb、Be、B、Ti、Zr、Al及Fe之添加量合計超過3.0%,則由於容易損害製造性,因此較佳為該等之合計在2.0質量%以下,更佳在1.5質量%以下。When the total amount of Mg, Mn, Ag, P, Sn, Zn, As, Sb, Be, B, Ti, Zr, Al, and Fe added exceeds 3.0%, the productivity is easily impaired. The total amount is 2.0% by mass or less, more preferably 1.5% by mass or less.

(結晶粒徑)(crystal size)

結晶粒會對強度造成影響,強度與結晶粒徑之-1/2次方成比例即霍爾-佩契(Hall-Petch)方程式一般而言會成立。又,粗大之結晶粒會使彎曲加工性惡化,成為彎曲加工時之表面粗糙的主要原因。因此,關於銅合金,一般而言,結晶粒之微細化可提高強度,故而較佳。具體而言,較佳在30μm以下,更佳在23μm以下。The crystal grains have an effect on the strength, and the intensity is proportional to the -1/2 power of the crystal grain size, that is, the Hall-Petch equation generally holds. Further, the coarse crystal grains deteriorate the bending workability and become a cause of surface roughness during bending. Therefore, as for the copper alloy, in general, the refinement of the crystal grains can improve the strength, which is preferable. Specifically, it is preferably 30 μm or less, more preferably 23 μm or less.

另一方面,如本發明之Cu-Co-Si系合金為析出強化型之合金,因此亦必須注意第二相粒子之析出狀態。於時效處理時析出於結晶粒內之第二相粒子有助於提高強度,但析出於結晶粒界之第二相粒子幾乎無助於提高強度。因此,為了提高強度,使第二相粒子析出於結晶粒內較佳。若結晶粒徑變小,則粒界面積將會變大,因而於時效處理時,第二相粒子容易優先析出於粒界。為了使第二相粒子析出於結晶粒內,結晶粒必須具有某程度之大小。具體而言,較佳在15μm以上,更佳在18μm以上。On the other hand, since the Cu-Co-Si-based alloy of the present invention is a precipitation-strengthening type alloy, it is necessary to pay attention to the precipitation state of the second-phase particles. The second phase particles which are precipitated in the crystal grains during the aging treatment contribute to the improvement of the strength, but the second phase particles which are precipitated out of the crystal grain boundaries hardly contribute to the improvement of the strength. Therefore, in order to increase the strength, it is preferred to precipitate the second phase particles in the crystal grains. When the crystal grain size becomes small, the grain boundary area becomes large, so that the second phase particles are preferentially precipitated at the grain boundary during the aging treatment. In order to precipitate the second phase particles out of the crystal grains, the crystal grains must have a certain size. Specifically, it is preferably 15 μm or more, and more preferably 18 μm or more.

本發明中,係將平均結晶粒徑控制於15~30μm之範圍。平均結晶粒徑較佳為18~23μm。藉由將平均結晶粒徑控制於此種範圍,可均衡地得到由結晶粒微細化產生之強度提高效果、及由析出硬化產生之強度提高效果該兩個效果。又,若為該範圍之結晶粒徑,則可得到優異之彎曲加工性及應力緩和特性。In the present invention, the average crystal grain size is controlled in the range of 15 to 30 μm. The average crystal grain size is preferably from 18 to 23 μm. By controlling the average crystal grain size within such a range, the two effects of the strength improving effect by the refinement of the crystal grains and the strength improving effect by precipitation hardening can be obtained in a balanced manner. Moreover, if it is the crystal grain size of this range, the outstanding bending workability and stress relaxation characteristic can be acquired.

本發明中,所謂結晶粒徑,係指利用顯微鏡對平行於壓延方向之厚度方向的剖面進行觀察時,包圍各個結晶粒之最小圓的直徑,所謂平均結晶粒徑係指其平均值。In the present invention, the crystal grain size refers to the diameter of the smallest circle surrounding each crystal grain when the cross section parallel to the thickness direction of the rolling direction is observed by a microscope, and the average crystal grain size means the average value thereof.

本發明中,每觀察視野0.5mm2 之最大結晶粒徑與最小結晶粒徑之差的平均在10μm以下,較佳在7μm以下。差之平均較理想為0μm,但由於實際上難以實現,因此將下限之實際的最低值設為3μm,典型而言最佳為3~7μm。於此,所謂最大結晶粒徑,係指於一個0.5mm2 之觀察視野中所觀察到的最大之結晶粒徑;所謂最小結晶粒徑,係指於同一視野中所觀察到的最小之結晶粒徑。於本發明中,在複數處之觀察視野中分別求得最大結晶粒徑與最小結晶粒徑之差,然後將其平均值作為最大結晶粒徑與最小結晶粒徑之差的平均。In the present invention, the average difference between the maximum crystal grain size and the minimum crystal grain size per observation field of 0.5 mm 2 is 10 μm or less, preferably 7 μm or less. The average of the difference is preferably 0 μm, but since it is practically difficult to achieve, the actual minimum value of the lower limit is set to 3 μm, and typically 3 to 7 μm is preferable. Here, the maximum crystal grain size refers to the largest crystal grain size observed in an observation field of 0.5 mm 2 ; the so-called minimum crystal grain size refers to the smallest crystal grain observed in the same field of view. path. In the present invention, the difference between the maximum crystal grain size and the minimum crystal grain size is obtained in the observation field at a plurality of points, and the average value thereof is taken as the average of the difference between the maximum crystal grain size and the minimum crystal grain size.

最大結晶粒徑與最小結晶粒徑之差較小,此係指結晶粒徑之大小均一,可減小同一材料內每個測定部位之機械特性的偏差。其結果,會使加工本發明之銅合金所得之伸銅品或電子機器零件的品質穩定性提高。The difference between the maximum crystal grain size and the minimum crystal grain size is small, which means that the crystal grain size is uniform, and the deviation of the mechanical properties of each measurement site in the same material can be reduced. As a result, the quality stability of the copper-clad product or the electronic machine part obtained by processing the copper alloy of the present invention is improved.

(製造方法)(Production method)

卡遜系銅合金之一般製程中,首先係使用大氣熔解爐,將電解銅、Si、Co等之原料加以熔解,得到所需組成之熔融液。接著,將該熔融液鑄造成鑄錠。然後,進行熱壓延,並重複進行冷壓延與熱處理,從而精加工成具有所需厚度及特性之條或箔。熱處理中具有固溶處理與時效處理。固溶處理中,係以約700~約1000℃之高溫進行加熱,使第二相粒子固溶於Cu母質中,同時使Cu母質再結晶。有時亦將熱壓延兼用作固溶處理。時效處理中,係於約350~約550℃之溫度範圍加熱1小時以上,使已在固溶處理中固溶之第二相粒子以奈米級之微細粒子的形態析出。於該時效處理中,強度與導電率會上升。為了得到更高之強度,有時會於時效處理前及/或時效處理後進行冷壓延。又,於時效處理後進行冷壓延之情形時,有時會在冷壓延後進行去應變退火(低溫退火)。In the general process of the Caston copper alloy, first, an atmospheric melting furnace is used to melt the raw materials of electrolytic copper, Si, Co, and the like to obtain a molten liquid having a desired composition. Next, the melt is cast into an ingot. Then, hot calendering is carried out, and cold calendering and heat treatment are repeated to be finished into a strip or foil having a desired thickness and characteristics. Solid solution treatment and aging treatment in heat treatment. In the solution treatment, heating is carried out at a high temperature of about 700 to about 1000 ° C to dissolve the second phase particles in the Cu matrix and recrystallize the Cu matrix. Hot rolling is also used as a solution treatment. In the aging treatment, the temperature is heated in a temperature range of about 350 to about 550 ° C for 1 hour or more, and the second phase particles which have been solid-solved in the solution treatment are precipitated in the form of fine particles of a nanometer order. In this aging treatment, the strength and electrical conductivity will increase. In order to obtain higher strength, cold rolling is sometimes performed before and/or after aging treatment. Further, in the case where cold rolling is performed after the aging treatment, strain relief annealing (low temperature annealing) may be performed after cold rolling.

於上述各步驟之間,適當地進行用以除去表面之氧化銹皮之研削、研磨、珠擊(shot blast)酸洗等。Between the above steps, grinding, polishing, shot blasting, and the like for removing rust scale on the surface are appropriately performed.

本發明之銅合金基本上亦會經由上述製程,但為了將平均結晶粒徑及結晶粒徑之偏差控制於本發明所規定的範圍,如上所述,重要的是於固溶處理步驟之前段,預先使微細之第二相粒子儘可能地以等間隔且同樣地析出於銅母相中。為了得到本發明之銅合金,尤其是必須一邊注意以下之點一邊來進行製造。The copper alloy of the present invention is basically also subjected to the above-described process, but in order to control the deviation of the average crystal grain size and the crystal grain size within the range specified by the present invention, as described above, it is important that the solution treatment step is preceded by The fine second phase particles are preliminarily precipitated in the copper matrix phase at equal intervals and in the same manner. In order to obtain the copper alloy of the present invention, it is particularly necessary to carry out the production while paying attention to the following points.

首先,於鑄造時之凝固過程中會不可避免地產生粗大之結晶物,於鑄造時之冷卻過程中會不可避免地產生粗大之析出物,因此於其後之步驟中,必須將該等結晶物固溶於母相中。若以950℃~1050℃保持1小時以上之後進行熱壓延,且將熱壓延結束時之溫度設在850℃以上,則即使於已添加有Co,進而已添加有Cr之情形時,上述結晶物亦可固溶於母相中。950℃以上之溫度條件與其它卡遜系合金之情形相比,係較高之溫度設定。若熱壓延前之保持溫度未達950℃則固溶將會不充分,若超過1050℃則存在材料發生熔解之可能性。又,若熱壓延結束時之溫度未達850℃,則由於已固溶之元素會再次析出,因而難以得到高強度。因此,為了得到高強度,較佳為以850℃結束熱壓延,並迅速地進行冷卻。First, coarse crystals are inevitably produced during the solidification process during casting, and coarse precipitates are inevitably generated during the cooling process during casting. Therefore, in the subsequent steps, the crystals must be crystallized. Solid solution in the parent phase. When the temperature is 950 ° C to 1050 ° C for 1 hour or more and then hot rolling, and the temperature at the end of hot rolling is 850 ° C or higher, even if Co is added and Cr is added, the above The crystals can also be dissolved in the parent phase. Temperature conditions above 950 ° C are higher temperature settings than in the case of other Carson alloys. If the holding temperature before hot rolling is less than 950 ° C, the solid solution will be insufficient, and if it exceeds 1050 ° C, there is a possibility that the material will melt. Moreover, when the temperature at the end of hot rolling is less than 850 ° C, it is difficult to obtain high strength because the elements which have been solid-solved are precipitated again. Therefore, in order to obtain high strength, it is preferred to terminate the hot rolling at 850 ° C and rapidly cool it.

此時,若冷卻速度緩慢,則含有Co或Cr之Si系化合物將會再次析出。當利用此種組成進行用以提升強度之熱處理(時效處理)時,因以冷卻過程中析出之析出物為核心而成長為無助於提高強度之粗大的析出物,故無法得到高強度。因此,必須儘可能地提高冷卻速度,具體而言必須在15℃/s以上。然而,於至400℃左右之溫度下,第二相粒子之析出較為顯著,故未達400℃時之冷卻速度不會成為問題。因此,本發明中,係將材料溫度自850℃至400℃之平均冷卻速度設在15℃/s以上,較佳為20℃/s以上來進行冷卻。所謂“自850℃降低至400℃時之平均冷卻速度”,係指對材料溫度自850℃降低至650℃之冷卻時間進行測量,並藉由“(850-400)(℃)/冷卻時間(s)”而算出之值(℃/s)。At this time, if the cooling rate is slow, the Si-based compound containing Co or Cr will be precipitated again. When the heat treatment (aging treatment) for improving the strength is carried out by using such a composition, the precipitates precipitated during the cooling process are the core and grow into coarse precipitates which do not contribute to the improvement of strength, so that high strength cannot be obtained. Therefore, it is necessary to increase the cooling rate as much as possible, specifically, at 15 ° C / s or more. However, at a temperature of about 400 ° C, the precipitation of the second phase particles is remarkable, so that the cooling rate of less than 400 ° C does not become a problem. Therefore, in the present invention, the average cooling rate of the material temperature from 850 ° C to 400 ° C is set to 15 ° C / s or more, preferably 20 ° C / s or more for cooling. The so-called "average cooling rate from 850 ° C to 400 ° C" refers to the measurement of the cooling time of the material temperature from 850 ° C to 650 ° C, and by "(850-400) ( ° C) / cooling time ( The value calculated by s)" (°C/s).

作為加快冷卻之方法,水冷最為有效。然而,由於冷卻速度會因水冷所使用之水的溫度而變化,因此可藉由進行水溫管理來進一步加快冷卻。若水溫在25℃以上,則由於有時會無法得到所需之冷卻速度,因此較佳為保持在25℃以下。若將材料放入儲有水之槽內進行水冷,則由於水的溫度會上升且容易變成在25℃以上,因此較佳為以霧狀(淋浴狀或薄霧狀)進行噴霧,以藉由固定之水溫(25℃以下)對材料進行冷卻,或使恆常低溫之水於水槽中流動,從而防止水溫上升。又,增設水冷噴嘴或增加每單位時間之水量,藉此亦可使冷卻速度上升。As a method of speeding up cooling, water cooling is most effective. However, since the cooling rate varies depending on the temperature of the water used for water cooling, the cooling can be further accelerated by performing water temperature management. When the water temperature is 25 ° C or more, the desired cooling rate may not be obtained, and therefore it is preferably kept at 25 ° C or lower. When the material is placed in a tank in which water is stored and water-cooled, since the temperature of the water rises and it is likely to become 25 ° C or more, it is preferable to spray in a mist form (shower or mist). The fixed water temperature (below 25 ° C) cools the material or keeps the constant low temperature water flowing in the water tank to prevent the water temperature from rising. Further, by adding a water-cooling nozzle or increasing the amount of water per unit time, the cooling rate can also be increased.

於熱壓延之後實施冷壓延。為了使析出物均勻地析出,實施該冷壓延以增加成為析出位置之應變,較佳為以70%以上之軋縮率來實施冷壓延,更佳為以85%以上之軋縮率來實施冷壓延。若不進行冷壓延,而於熱壓延之後不久實施固溶處理,則析出物將不會均勻地析出。亦可適當地重複熱壓延及其後之冷壓延之組合。Cold rolling is performed after hot rolling. In order to uniformly precipitate the precipitate, the cold rolling is performed to increase the strain at the deposition position, and it is preferable to carry out cold rolling at a rolling reduction ratio of 70% or more, and more preferably to perform cold rolling at a rolling reduction ratio of 85% or more. Calendering. If the solution treatment is carried out shortly after hot rolling without performing cold rolling, the precipitates will not be uniformly deposited. The combination of hot rolling and subsequent cold rolling can also be suitably repeated.

於冷壓延後實施第一時效處理。若於實施本步驟之前殘存有第二相粒子,則在實施本步驟時,此種第二相粒子會進一步成長,因而與本步驟中最初析出之第二相粒子在粒徑上會產生差異,但於本發明中,由於已在前段之步驟中使第二相粒子大致消失,因此,可使微細之第二相粒子以均勻之大小而同樣地析出。The first aging treatment is performed after cold rolling. If the second phase particles remain before the step is carried out, the second phase particles will further grow when the step is carried out, and thus the second phase particles initially precipitated in this step will have a difference in particle size. However, in the present invention, since the second phase particles are substantially eliminated in the step of the preceding stage, the fine second phase particles can be uniformly precipitated in a uniform size.

然而,若第一時效處理之時效溫度過低,則帶來釘扎效果之第二相粒子的析出量將會減少,而僅可部分地得到由固溶處理所產生的釘扎效果,因而結晶粒之大小變得不均。另一方面,若時效溫度過高,則第二相粒子將會變得粗大,且第二相粒子將會不均勻地析出,故第二相粒子之粒徑的大小會變得不均。又,時效時間越長,則第二相粒子越生長,因而必須設定成適當的時效時間。However, if the aging temperature of the first aging treatment is too low, the amount of precipitation of the second phase particles which bring the pinning effect is reduced, and only the pinning effect by the solution treatment can be partially obtained, and thus the crystallization is performed. The size of the grains becomes uneven. On the other hand, if the aging temperature is too high, the second phase particles will become coarse, and the second phase particles will be unevenly precipitated, so that the size of the second phase particles will become uneven. Further, the longer the aging time, the more the second phase particles grow, and therefore it is necessary to set an appropriate aging time.

以350~500℃進行1~24小時之第一時效處理,較佳為以350℃以上且未達400℃進行12~24小時之第一時效處理、以400℃以上且未達450℃進行6~12小時之第一時效處理、以450℃以上且未達500℃進行3~6小時之第一時效處理,藉此,可使微細之第二相粒子均勻地析出於母相中。若為此種組織,則可同樣地對下一步驟之固溶處理中產生之再結晶粒的生長進行釘扎,從而可得到結晶粒徑之偏差較小的整粒組成。The first aging treatment is carried out at 350 to 500 ° C for 1 to 24 hours, preferably at 350 ° C or higher and less than 400 ° C for the first aging treatment for 12 to 24 hours, and at 400 ° C or higher and less than 450 ° C for 6 The first aging treatment of ~12 hours, the first aging treatment at 450 ° C or higher and less than 500 ° C for 3 to 6 hours, whereby the fine second phase particles can be uniformly precipitated in the matrix phase. In the case of such a structure, the growth of the recrystallized grains generated in the solution treatment in the next step can be similarly pinned, and a uniform composition having a small variation in crystal grain size can be obtained.

於第一時效處理之後進行固溶處理。於此,係一面使第二相粒子固溶,一面使微細且均勻之再結晶粒成長。因此,必須將固溶溫度設為950℃~1050℃。於此,再結晶粒先成長,然後,因第一時效處理中析出之第二相粒子固溶,故可藉由釘扎效果來控制再結晶粒之成長。然而,因於第二相粒子固溶之後釘扎效果將會消失,故若長時間連續進行固溶處理,則再結晶粒將會變大。因此,對於適當之固溶處理的時間而言,於950℃以上且未達1000℃時為60秒~300秒,較佳為120~180秒;於1000℃以上且未達1050℃時則為30秒~180秒,較佳為60秒~120秒。The solution treatment is carried out after the first aging treatment. Here, while the second phase particles are solid-solved, fine and uniform recrystallized grains are grown. Therefore, the solution temperature must be set to 950 ° C to 1050 ° C. Here, the recrystallized grains are first grown, and then the second phase particles precipitated in the first aging treatment are solid-solved, so that the growth of the recrystallized grains can be controlled by the pinning effect. However, since the pinning effect disappears after solid solution of the second phase particles, if the solution treatment is continuously performed for a long period of time, the recrystallized grains become large. Therefore, the time for the appropriate solution treatment is 60 seconds to 300 seconds, preferably 120 to 180 seconds at 950 ° C or higher and less than 1000 ° C; and 1000 ° C or higher and less than 1050 ° C is 30 seconds to 180 seconds, preferably 60 seconds to 120 seconds.

即使於固溶處理後之冷卻過程中,為了避免析出第二相粒子,材料溫度自850℃降低至400℃時之平均冷卻速度應在15℃/s以上,較佳應在20℃/s以上。Even in the cooling process after solution treatment, in order to avoid precipitation of the second phase particles, the average cooling rate of the material temperature from 850 ° C to 400 ° C should be above 15 ° C / s, preferably above 20 ° C / s .

於固溶處理之後實施第二時效處理。第二時效處理之條件,可為對析出物之微細化有用而慣用實施之條件,但須注意對溫度及時間進行設定以使析出物不會粗大化。例舉時效處理之條件之一例如下:350~550℃之溫度範圍1~24小時,更佳為400~500℃之溫度範圍1~24小時。再者,時效處理後之冷卻速度幾乎不會對析出物之大小造成影響。於第二時效處理前之情形時,增加析出位置,利用析出位置來促進時效硬化,從而實現強度提升。而於第二時效處理後之情形時,利用析出物來促進加工硬化,從而實現強度提升。亦可於第二時效處理之前及/或之後實施冷壓延。A second aging treatment is performed after the solution treatment. The conditions of the second aging treatment may be conditions which are conventionally used for the miniaturization of precipitates, but care must be taken to set the temperature and time so that the precipitates are not coarsened. One of the conditions for aging treatment is as follows: a temperature range of 350 to 550 ° C for 1 to 24 hours, more preferably 400 to 500 ° C for a temperature range of 1 to 24 hours. Furthermore, the cooling rate after the aging treatment hardly affects the size of the precipitate. In the case of the second aging treatment, the precipitation position is increased, and the precipitation position is used to promote age hardening, thereby achieving strength improvement. In the case of the second aging treatment, the precipitate is used to promote work hardening, thereby achieving strength improvement. Cold rolling may also be performed before and/or after the second aging treatment.

本發明之Cu-Co-Si系合金可加工成各種伸銅品,例如可加工成板、條、管、棒及線,並且,本發明之Cu-Co-Si系銅合金可使用於導線架、連接器、接腳、端子、繼電器、開關、二次電池用箔材等之電子零件等。The Cu-Co-Si alloy of the present invention can be processed into various copper-exposed products, for example, can be processed into sheets, strips, tubes, rods and wires, and the Cu-Co-Si-based copper alloy of the present invention can be used for a lead frame. , electronic components such as connectors, pins, terminals, relays, switches, and foils for secondary batteries.

[實施例][Examples]

以下,一併顯示本發明之實施例與比較例,但該等實施例係為了更進一步理解本發明及其優點而提供者,並不限定本發明。The embodiments and comparative examples of the present invention are shown below, but the present invention is provided to further understand the present invention and its advantages, and does not limit the present invention.

於高頻熔解爐中,以1300℃將表1(實施例)及表2(比較例)所記載之成分組成的銅合金加以熔化,鑄造成厚度為30mm之鑄錠。接著,將該鑄錠加熱至1000℃之後,進行熱壓延直至板厚為10mm,上升溫度(熱壓延結束之溫度)係設為900℃。熱壓延結束之後,將材料溫度自850℃下降至400℃時的平均冷卻速度設為18℃/s而進行水冷,然後放置於空氣中加以冷卻。接著,為了除去表面之銹皮,進行表面切削直至厚度為9mm,然後藉由冷壓延而形成厚度為0.15mm之板。繼而,以各種時效溫度實施3~12小時之第一時效處理(幾個比較例並未進行此時效處理)後,以各種固溶溫度進行120秒之固溶處理,然後立即將材料溫度自850℃下降至400℃時之平均冷卻速度設為18℃/s而進行水冷,然後放置於空氣中加以冷卻。接著,進行冷壓延至0.10mm,再以450℃於惰性環境氣氛中實施3小時之第二時效處理,並且進行冷壓延至0.08mm,從而製造出試驗片。In a high-frequency melting furnace, a copper alloy having the composition described in Table 1 (Example) and Table 2 (Comparative Example) was melted at 1300 ° C to cast an ingot having a thickness of 30 mm. Next, the ingot was heated to 1000 ° C, and then hot rolled to a thickness of 10 mm, and the rising temperature (temperature at which hot rolling was completed) was set to 900 ° C. After the end of the hot rolling, the average cooling rate when the material temperature was lowered from 850 ° C to 400 ° C was set to 18 ° C / s, water-cooled, and then placed in the air to be cooled. Next, in order to remove the scale on the surface, surface cutting was performed until the thickness was 9 mm, and then a plate having a thickness of 0.15 mm was formed by cold rolling. Then, after performing the first aging treatment for 3 to 12 hours at various aging temperatures (several comparative examples are not subjected to the effect treatment), the solution treatment is performed at various solid solution temperatures for 120 seconds, and then the material temperature is immediately from 850. The average cooling rate when the temperature was lowered to 400 ° C was set to 18 ° C / s, and water-cooled, and then placed in the air to be cooled. Subsequently, cold rolling was carried out to 0.10 mm, and a second aging treatment was performed at 450 ° C for 3 hours in an inert atmosphere, and cold rolling was performed to 0.08 mm to prepare a test piece.

以下述方法對以上述方式所得之各試驗片的各種特性進行評估。The various characteristics of each test piece obtained in the above manner were evaluated in the following manner.

(1)平均結晶粒徑(1) Average crystal grain size

關於結晶粒徑,係以觀察面為平行於壓延方向之厚度方向之剖面的方式,將試料埋入樹脂中,利用機械研磨對觀察面進行鏡面拋光之後,於相對於100容量份之水混合有10容量份之濃度為36%的鹽酸而成之溶液中,溶解重量為該溶液重量之5%的氯化鐵。將試料於以上述方式所製成之溶液中浸漬10秒,使金屬組織出現。接著,利用光學顯微鏡將上述金屬組織放大100倍,將0.5mm2 之觀察視野拍攝成一張照片,求出所有包圍各個結晶粒之最小圓的直徑,針對各觀察視野而算出平均值,將15處觀察視野之平均值作為平均結晶粒徑。The crystal grain size is such that the observation surface is parallel to the cross section in the thickness direction of the rolling direction, and the sample is embedded in the resin, and the observation surface is mirror-polished by mechanical polishing, and then mixed with water of 100 parts by volume. A solution of 10 parts by volume of 36% hydrochloric acid was dissolved in 5% by weight of ferric chloride. The sample was immersed in the solution prepared in the above manner for 10 seconds to cause metal structure to appear. Next, the metal structure was magnified 100 times by an optical microscope, and an observation field of 0.5 mm 2 was taken as a photograph, and the diameter of all the smallest circles surrounding each crystal grain was determined, and the average value was calculated for each observation field, and 15 points were obtained. The average value of the visual field was observed as the average crystal grain size.

(2)最大結晶粒徑-最小結晶粒徑之差之平均(2) Average of the difference between the maximum crystal grain size and the minimum crystal grain size

關於在求得平均結晶粒徑時所測得之結晶粒徑,係針對每個視野求出最大值與最小值之差,將15處觀察視野之平均值作為最大結晶粒徑-最小結晶粒徑之差之平均。Regarding the crystal grain size measured when the average crystal grain size is obtained, the difference between the maximum value and the minimum value is obtained for each field of view, and the average value of the observation fields at 15 points is taken as the maximum crystal grain size - the minimum crystal grain size. The average of the differences.

(3)強度(3) Intensity

關於強度,係進行壓延平行方向之拉伸試驗,測得0.2%之安全限應力(YS:MPa)。測定部位之強度之偏差為30處之最大強度-最小強度之差,平均強度為此30處之平均值。Regarding the strength, a tensile test in the parallel direction of rolling was performed, and a safety limit stress (YS: MPa) of 0.2% was measured. The deviation of the strength of the measurement site is the difference between the maximum intensity and the minimum intensity at 30 points, and the average intensity is the average of 30 points.

(4)導電率(4) Conductivity

關於導電率(EC:% IACS),係藉由利用雙電橋之體積電阻率之測定所求出。測定部位之導電率之偏差為30處之最大強度-最小強度之差,平均導電率為此30處之平均值。The conductivity (EC: % IACS) was determined by measurement of the volume resistivity of the double bridge. The deviation of the conductivity of the measurement site is the difference between the maximum intensity and the minimum intensity at 30, and the average conductivity is the average of the 30 points.

(5)應力緩和特性(5) Stress relaxation characteristics

關於應力緩和特性,如圖1所示,係於加工為寬10mm×長100mm之厚度t=0.08mm之各試驗片上,以標點距離l為25mm,且高度y0 上之負荷應力為0.2%安全限應力之80%的方式來決定高度,並負荷彎曲應力,對以150℃加熱1000小時後之圖2所示之永久變形量(高度)y進行測定,算出應力緩和率{[l-(y-y1 )(mm)/(y0 -y1 )(mm)]×100(%)}。再者,y1 為負荷應力前之初始的翹曲高度。測定部位之應力緩和率之偏差為30處之最大強度-最小強度之差,平均應力緩和率為此30處之平均值。As for the stress relaxation characteristics, as shown in Fig. 1, on the test pieces processed to a thickness of 10 mm × 100 mm and a thickness of t = 0.08 mm, the puncture distance l is 25 mm, and the load stress at the height y 0 is 0.2%. The height is limited by 80% of the stress, and the bending stress is applied. The permanent deformation amount (height) y shown in Fig. 2 after heating at 150 ° C for 1000 hours is measured to calculate the stress relaxation rate {[l-(y). -y 1 )(mm)/(y 0 -y 1 )(mm)]×100(%)}. Furthermore, y 1 is the initial warpage height before the load stress. The deviation of the stress relaxation rate at the measurement site was the difference between the maximum strength and the minimum strength at 30 points, and the average stress relaxation rate was the average value at the 30 points.

(6)彎曲加工性(6) Bending workability

關於彎曲加工性,係藉由彎曲部之表面粗糙度來進行評估。根據JIS H 3130進行Badway(彎曲軸與壓延方向為同一方向)之W彎曲試驗,利用共軛焦雷射顯微鏡對彎曲部之表面進行解析,求出JIS B 0601規定之Ra(μm)。測定部位之彎曲粗糙度之偏差為30處之最大Ra-最小Ra之差,平均彎曲粗糙度為此30處之Ra之平均值。The bending workability is evaluated by the surface roughness of the bent portion. The W bending test of the Badway (the bending axis and the rolling direction are the same direction) was carried out in accordance with JIS H 3130, and the surface of the curved portion was analyzed by a conjugated focal laser microscope to obtain Ra (μm) defined in JIS B 0601. The deviation of the bending roughness of the measurement portion is the difference between the maximum Ra and the minimum Ra at 30 points, and the average bending roughness is the average value of Ra at 30 points.

No.1~6之合金,係Co濃度較低(0.7及2.0質量%)之合金,為本發明之實施例,平均強度雖因Co濃度低而變小,但各種特性之偏差少。The alloy of No. 1 to 6 is an alloy having a low Co concentration (0.7 and 2.0% by mass). In the example of the present invention, the average strength is small due to a low Co concentration, but the variation in various characteristics is small.

No.7~36之合金,係Co濃度高(3.0質量%以上)之合金,為本發明之實施例,任一者皆具有適於電子材料用之強度及導電率,特性之偏差亦少。The alloy of No. 7 to 36 is an alloy having a high Co concentration (3.0% by mass or more), and is an embodiment of the present invention, and any of them has strength and electrical conductivity suitable for an electronic material, and variations in characteristics are also small.

No.37~44之合金,無進行第一時效處理,在固溶處理時因結晶粒徑發生粗大化,故強度及彎曲加工性劣化。The alloy of No. 37 to 44 was not subjected to the first aging treatment, and the crystal grain size was coarsened during the solution treatment, so that the strength and the bending workability were deteriorated.

No.45~48之合金,無進行第一時效處理,且固溶溫度低。第二相粒子未充分固溶,又,由於結晶粒過小,因此強度及應力緩和特性劣化。The alloy of No. 45 to 48 was not subjected to the first aging treatment, and the solid solution temperature was low. The second phase particles are not sufficiently solid-solved, and since the crystal grains are too small, the strength and stress relaxation characteristics are deteriorated.

No.49~54之合金,因第一時效處理之時效溫度過低,第二相粒子少,故在固溶處理時結晶粒徑發生粗大化,強度及彎曲加工性劣化。又,結晶粒徑之偏差大。其結果,特性之偏差變大。In the alloy of No. 49 to 54, since the aging temperature of the first aging treatment is too low and the second phase particles are small, the crystal grain size is coarsened during the solution treatment, and the strength and the bending workability are deteriorated. Further, the variation in crystal grain size is large. As a result, the variation in characteristics becomes large.

No.55~56之合金,由於Co之添加量過多,因此強度及導電率劣化。In the alloy of No. 55 to 56, since the amount of addition of Co is too large, strength and electrical conductivity are deteriorated.

No.57~64之合金,因第一時效處理之時效溫度過高,第二相粒子不均一地成長,故結晶粒徑參差不齊。其結果,特性之偏差變大。In the alloy of No. 57 to 64, since the aging temperature of the first aging treatment is too high and the second phase particles are unevenly grown, the crystal grain size is uneven. As a result, the variation in characteristics becomes large.

l...標點距離l. . . Punctuation distance

t...厚度t. . . thickness

y...永久變形量(高度)y. . . Permanent deformation (height)

y0 ...高度y 0 . . . height

圖1,係應力緩和試驗法之說明圖。Figure 1 is an explanatory diagram of the stress relaxation test method.

圖2,係關於應力緩和試驗法之永久變形量之說明圖。Fig. 2 is an explanatory view of the amount of permanent deformation of the stress relaxation test method.

Claims (5)

一種電子材料用銅合金,其含有Co:0.5~4.0質量%、Si:0.1~1.2質量%,剩餘部分則由Cu及不可避免之雜質所構成,平均結晶粒徑為15~30μm,每觀察視野0.5mm2 之最大結晶粒徑與最小結晶粒徑之差的平均在10μm以下。A copper alloy for electronic materials containing Co: 0.5 to 4.0% by mass, Si: 0.1 to 1.2% by mass, and the balance being composed of Cu and unavoidable impurities, and an average crystal grain size of 15 to 30 μm per observation field The average difference between the maximum crystal grain size and the minimum crystal grain size of 0.5 mm 2 is 10 μm or less. 一種電子材料用銅合金,含有Co:0.5~4.0質量%、Si:0.1~1.2質量%,並滿足以下(1)~(4)任一項以上之組成條件:(1)進一步含有最大為0.5質量%之Cr;(2)進一步含有總計最大為0.5質量%之選自Mg、Mn、Ag及P之1種或2種以上的元素;(3)進一步含有總計最大為2.0質量%之選自Sn及Zn之1種或2種的元素;(4)進一步含有總計最大為2.0質量%之選自As、Sb、Be、B、Ti、Zr、Al及Fe之1種或2種以上的元素;且剩餘部分由Cu及不可避免之雜質所構成,平均結晶粒徑為15~30μm,每觀察視野0.5mm2 之最大結晶粒徑與最小結晶粒徑之差的平均在10μm以下。A copper alloy for an electronic material containing Co: 0.5 to 4.0% by mass and Si: 0.1 to 1.2% by mass, and satisfying the following composition conditions of any one of the following (1) to (4): (1) further containing a maximum of 0.5 And (2) further containing a total of 0.5% by mass or more of one or more elements selected from the group consisting of Mg, Mn, Ag, and P; and (3) further containing a total of 2.0% by mass in total. One or two elements of Sn and Zn; (4) further containing one or more elements selected from the group consisting of As, Sb, Be, B, Ti, Zr, Al, and Fe in a total amount of 2.0% by mass in total The remainder is composed of Cu and unavoidable impurities, and the average crystal grain size is 15 to 30 μm, and the average difference between the maximum crystal grain size and the minimum crystal grain size of 0.5 mm 2 per observation field is 10 μm or less. 一種銅合金之製造方法,係用以製造申請專利範圍第1或2項之銅合金,其包含依序進行以下步驟:步驟1,對具有所需組成之鑄錠進行熔解鑄造;步驟2,以950℃~1050℃加熱1小時以上之後進行熱壓延,將熱壓延結束時之溫度設在850℃以上,將自850℃至400℃之平均冷卻速度設在15℃/s以上來進行冷卻;步驟3,進行加工度在70%以上之冷壓延;步驟4,進行以350~500℃加熱1~24小時之時效處理;步驟5,以950~1050℃進行固溶處理,將材料溫度自850℃下降至400℃時的平均冷卻速度設在15℃/s以上來進行冷卻;步驟6,進行隨意之冷壓延;步驟7,進行時效處理;步驟8,進行隨意之冷壓延。A copper alloy manufacturing method for manufacturing a copper alloy according to claim 1 or 2, comprising the steps of: step 1, melting and casting an ingot having a desired composition; and step 2; After heating at 950 ° C to 1050 ° C for 1 hour or more, hot rolling is performed, and the temperature at the end of hot rolling is set to 850 ° C or higher, and the average cooling rate from 850 ° C to 400 ° C is set at 15 ° C / s or more for cooling. Step 3, performing cold rolling with a processing degree of 70% or more; Step 4, performing aging treatment at 350 to 500 ° C for 1 to 24 hours; Step 5, performing solution treatment at 950 to 1050 ° C, the material temperature is self-treated The average cooling rate at 850 ° C down to 400 ° C is set at 15 ° C / s for cooling; step 6, for random cold rolling; step 7, for aging treatment; step 8, for random cold rolling. 一種伸銅品,係具備有申請專利範圍第1或2項之銅合金。A copper-strength product having a copper alloy having the first or second patent application scope. 一種電子機器零件,係具備有申請專利範圍第1或2項之銅合金。An electronic machine part having a copper alloy having the first or second patent application scope.
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