TWI421373B - Tungsten coating method for metal base material - Google Patents
Tungsten coating method for metal base material Download PDFInfo
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- TWI421373B TWI421373B TW97134148A TW97134148A TWI421373B TW I421373 B TWI421373 B TW I421373B TW 97134148 A TW97134148 A TW 97134148A TW 97134148 A TW97134148 A TW 97134148A TW I421373 B TWI421373 B TW I421373B
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/20—Electrolytic after-treatment
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/24—Chemical after-treatment
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Description
本發明關於一種金屬母材之鎢塗層方法,特別關於一種可提高用作半導體及TFT-LCD製造工序中所使用之真空室或電極輔材之鋁母材之耐等離子性、耐熱龜裂性(Heat and crack resistance)、耐腐蝕性,從而延長真空室之使用壽命且降低污染度之金屬母材之鎢塗層方法。 The present invention relates to a method for coating a tungsten metal coating of a metal base material, and more particularly to a plasma-resistant and heat-resistant cracking resistance of an aluminum base material which can be used as a vacuum chamber or an electrode auxiliary material used in a semiconductor and TFT-LCD manufacturing process. (Heat and crack resistance), a tungsten coating method for a metal base material which is corrosion-resistant, thereby prolonging the service life of the vacuum chamber and reducing the degree of contamination.
半導體或TFT-LCD之製造,係在真空室中利用電極提供蝕刻及蒸鍍氣體,並對上述氣體施加電力而活化成等離子狀態,從而進行蝕刻或在基板上通過高溫將物質進行化學蒸鍍等操作。 In the manufacture of a semiconductor or a TFT-LCD, an etching and vapor deposition gas is supplied by an electrode in a vacuum chamber, and electric power is applied to the gas to be activated into a plasma state, thereby performing etching or chemical vapor deposition of the substance on the substrate by high temperature. operating.
通過這些工序等,構成真空室或電極之鋁(Al)制輔材,在高溫中將裸露於腐蝕性等離子氣體中。其結果,鋁制輔材會發生龜裂或腐蝕,嚴重之將導致從鋁輔材中發生微粒污染,不僅影響鋁制輔材之使用壽命,還將導致將該不利影響帶到即將蒸鍍之半導體或TFT-LCD基板等,導致產品受損或導致中段加工過程。 By these steps, an aluminum (Al) auxiliary material constituting a vacuum chamber or an electrode is exposed to a corrosive plasma gas at a high temperature. As a result, aluminum auxiliary materials may crack or corrode, which will cause particulate contamination from aluminum auxiliary materials, which will not only affect the service life of aluminum auxiliary materials, but also bring the adverse effects to the upcoming evaporation. Semiconductor or TFT-LCD substrates, etc., cause damage to the product or cause intermediate processing.
為解決上述問題,提出了耐真空室內惡劣環境之耐等離子性和耐熱龜裂性之多種技術,以便對鋁制輔材表面進行工序。 In order to solve the above problems, various techniques for resisting plasma resistance and thermal cracking resistance in a harsh environment in a vacuum chamber have been proposed in order to carry out a process on the surface of an aluminum auxiliary material.
美國專利第5,641,375號中揭示有,為減少等離子腐蝕 及壁之磨損(wear)而對鋁真空室壁進行陽極氧化工序(anodized),從而形成陽極氧化塗膜之技術。但係,陽極氧化之情況下雖然通過調整高溫下塗膜厚度之方式,在一定程度上確保耐等離子性或耐熱龜裂性,但由於等離子氣體之腐蝕而導致發生塗膜損傷嚴重等其他問題。 U.S. Patent No. 5,641,375 discloses the reduction of plasma corrosion. And the wear of the wall and the anodization process of the aluminum vacuum chamber wall to form an anodized coating film. However, in the case of anodizing, although the plasma-resistant or heat-resistant cracking property is ensured to some extent by adjusting the thickness of the coating film at a high temperature, other problems such as serious damage of the coating film due to corrosion of the plasma gas occur.
日本申請公開第62-103379號中揭示有在鋁制物質上形成Al2O3、AlC、TiN、TiC、及AlN等之防腐膜之技術。但係上述防腐膜雖可提高耐等離子性,但由於與鋁之粘附力而存在發生龜裂之問題。 A technique for forming an anticorrosive film of Al 2 O 3 , AlC, TiN, TiC, and AlN on an aluminum material is disclosed in Japanese Laid-Open Patent Publication No. 62-103379. However, although the above-mentioned anticorrosive film can improve plasma resistance, there is a problem that cracking occurs due to adhesion to aluminum.
並且,還揭示有在鋁制輔材表面進行氧化鉻(Cr2O3)塗膜之塗層方法,但係僅通過該氧化鉻塗膜提高耐腐蝕性有其限度。 Further, a coating method of performing a chromium oxide (Cr 2 O 3 ) coating film on the surface of an aluminum auxiliary material has been disclosed, but there is a limit to improving the corrosion resistance only by the chromium oxide coating film.
在大韓民國發明專利公開第2000-59295號中揭示有通過電鍍對金屬表面進行鎢合金塗層,從而提高表面硬度及耐腐蝕性,在大韓民國發明專利公開第2004-272號中揭示有通過無電解濕法鍍金方法將鎢、鈀、鎳、及磷塗於鋁合金表面之技術。 In the Korean Patent Publication No. 2000-59295, it is disclosed that a tungsten alloy coating is applied to a metal surface by electroplating to improve surface hardness and corrosion resistance, which is disclosed in the Republic of Korea Patent Publication No. 2004-272. A method of applying tungsten, palladium, nickel, and phosphorus to an aluminum alloy surface by a gold plating method.
這些能通過鎢鍍金來一定程度上確保鋁制輔材之耐等離子性。但即使在鋁制輔材上進行鎢鍍金,由於工序溫度本身高而鋁制輔材和鎢鍍金層之間之熱膨脹特性差異較大,存在由此引起之龜裂及剝離、起泡等會導致先前塗層技術製備之真空室內鋁制輔材誘發急劇之微粒污染等新之問題。 These can ensure the plasma resistance of aluminum auxiliary materials to a certain extent by tungsten gold plating. However, even if tungsten gold plating is performed on the aluminum auxiliary material, the thermal expansion characteristics between the aluminum auxiliary material and the tungsten gold plating layer are largely different due to the high process temperature itself, and the resulting crack, peeling, foaming, etc. may cause New problems in the vacuum chamber aluminum materials prepared by the previous coating technology induced rapid particle contamination.
在大韓民國發明專利公開第2005-22184號中揭示有在 半導體零件之金屬模組表面依次設置第1鎳鍍金層/第2鎳鍍金層/鎢鍍金層/第3鎳鍍金層/銠鍍金層之技術,以便延長裝備之使用壽命。通過這種技術雖然可解除金屬模組之耐腐蝕性和金屬層間之剝離,但需要形成5層薄膜而存在導致工序複雜、製造費用增加等問題。 It is disclosed in the Republic of Korea Invention Patent Publication No. 2005-22184. The surface of the metal module of the semiconductor component is sequentially provided with a first nickel gold plating layer / a second nickel gold plating layer / a tungsten gold plating layer / a third nickel gold plating layer / a gold plating layer to extend the life of the equipment. According to this technique, the corrosion resistance of the metal module and the peeling between the metal layers can be released. However, it is necessary to form a five-layer film, which causes problems such as complicated processes and increased manufacturing costs.
為解決上述問題之不足,本發明提供一種可提高用於半導體及TFT-LCD製造工序中之真空室或電極鋁制輔材之耐等離子性、耐熱龜裂性、耐腐蝕性,從而延長真空室使用壽命且降低污染度之金屬母材之鎢塗層方法。 In order to solve the above problems, the present invention provides a plasma chamber, an aluminum alloy auxiliary material for use in a semiconductor and a TFT-LCD manufacturing process, which is resistant to plasma, heat cracking, and corrosion resistance, thereby extending the vacuum chamber. A tungsten coating method for a metal base material having a service life and a reduced degree of contamination.
本發明之另一目的在於,提供一種通過上述方法製造的半導體及TFT-LCD零件。 Another object of the present invention is to provide a semiconductor and TFT-LCD part manufactured by the above method.
本發明係以如下方式實現之。本發明之第一個方面關於一種金屬母材之鎢塗層方法,包括如下步驟:對包括鋁或鋁合金之金屬母材進行陽極氧化工序而形成陽極氧化塗膜之階段;對上述金屬母材之陽極氧化塗膜上進行電解或無電解鍍金工序而形成鎢鍍金膜之階段;及熱處理階段;其中,上述鎢電解鍍金,係通過製備包括Na2OWO3.H2O(5~50g/l)、Na2CO3(10~30g/l)、NH4OH(1~15g/l)、CH2OHCOONa(1~5g/l)、及Na3C6H5O7(20~50g/l)之水溶液(pH 6~7)後,將其溫度調至75~85℃,以1~10A/dm2之 電流密度施加電力而進行,上述鎢無電解鍍金,係通過製備包括Na2WO4.2H2O(10~30g/l)、NiCl2.6H2O(5~15g/l)、NaH2PO2.H2O(10~30g/l)、CH2OHCOONa(5~15g/l)、Na3C6H5O7(5~10g/l)、CH4N2S(5~10g/l)、Na2CO3(10~25g/l)、NH4NF2(5~15%)之水溶液(pH 8~10)後,將其溫度調至80~90℃而進行。 The present invention is achieved in the following manner. A first aspect of the invention relates to a tungsten coating method for a metal base material, comprising the steps of: performing an anodizing process on a metal base material comprising aluminum or an aluminum alloy to form an anodized coating film; and the above metal base material a step of forming an tungsten gold plating film by performing an electrolysis or electroless gold plating process on the anodized coating film; and a heat treatment stage; wherein the tungsten electrolytic gold plating is performed by preparing Na 2 OWO 3 . H 2 O (5~50g/l), Na 2 CO 3 (10~30g/l), NH 4 OH (1~15g/l), CH 2 OHCOONa (1~5g/l), and Na 3 C 6 After an aqueous solution of H 5 O 7 (20 to 50 g/l) (pH 6 to 7), the temperature is adjusted to 75 to 85 ° C, and electric current is applied at a current density of 1 to 10 A/dm 2 . Gold plating is prepared by including Na 2 WO 4 . 2H 2 O (10~30g/l), NiCl 2 . 6H 2 O (5~15g/l), NaH 2 PO 2 . H 2 O (10~30g/l), CH 2 OHCOONa (5~15g/l), Na 3 C 6 H 5 O 7 (5~10g/l), CH 4 N 2 S (5~10g/l) After an aqueous solution (pH 8 to 10) of Na 2 CO 3 (10 to 25 g/l) and NH 4 NF 2 (5 to 15%), the temperature was adjusted to 80 to 90 ° C.
其中,上述陽極氧化工序係,在包括磷酸、草酸、磺酸及其組合所構成之群中選擇之一種酸之陽極氧化電解質中,施加0.1~100V之電壓,以25~100℃溫度進行0.5~5小時。 The anodizing step is carried out by applying a voltage of 0.1 to 100 V to a temperature of 25 to 100 ° C in an anodizing electrolyte of an acid selected from the group consisting of phosphoric acid, oxalic acid, sulfonic acid, and a combination thereof. 5 hours.
其中,上述熱處理係在350~600℃溫度條件下進行。 The heat treatment is carried out at a temperature of 350 to 600 ° C.
並且,進一步包括,在形成上述陽極氧化塗膜後,通過電解鍍金工序在上述陽極氧化塗膜上形成鎳鍍金膜之階段。 Further, the method further includes a step of forming a nickel gold plating film on the anodized film by an electrolytic gold plating process after the anodized film is formed.
上述鎳電解鍍金,係以電解鎳鍍金液製備包括NiSO4.6H2O(100~500g/l)、NiCl2.6H2O(20~80g/l)、H3BO3(20~50g/l)之水溶液(pH 8~10)後,將其溫度調至40~80℃,以1~10A/dm2之電流密度施加電力而進行。 The above nickel electrolytic gold plating is prepared by electrolytic nickel plating gold plating solution including NiSO 4 . 6H 2 O (100~500g/l), NiCl 2 . After 6H 2 O (20~80g/l) and H 3 BO 3 (20~50g/l) aqueous solution (pH 8~10), adjust the temperature to 40~80°C, 1~10A/dm 2 The current density is applied by applying electric power.
本發明第2個方面關於一種半導體及TFT-LCD製造用真空室零件,根據本發明第1個方面之方法形成且在表面依次形成鋁氧化塗膜、鎢鍍金膜之。 According to a second aspect of the invention, a vacuum chamber component for semiconductor and TFT-LCD manufacturing is formed according to the method of the first aspect of the invention, and an aluminum oxide coating film or a tungsten gold plating film is sequentially formed on the surface.
其中,在上述鋁氧化塗膜和鎢鍍金膜之間形成鎳鍍金膜。 Among them, a nickel gold plating film is formed between the aluminum oxide coating film and the tungsten gold plating film.
通過本發明,在鋁制金屬母材表面形成陽極氧化塗膜層和鎢鍍金膜,從而提高金屬之耐等離子性、耐熱龜裂性 及耐腐蝕性。 According to the invention, an anodized coating layer and a tungsten gold plating film are formed on the surface of the aluminum metal base material, thereby improving the plasma resistance and heat crack resistance of the metal. And corrosion resistance.
以下結合圖面對本發明進行更為詳細之說明。為進行更為形象之說明,對各圖面中之結果進行擴大表示。此時,圖面中相同符號表示相同之結構。並且,描述為某層在另一層“上”時,可以理解為上述某層可以直接與上述其他層接觸,也可以在他們之間存在第三之層。 The invention will now be described in greater detail with reference to the drawings. For a more vivid description, the results in each drawing are expanded. At this time, the same symbols in the drawings indicate the same structure. Also, when a layer is described as being "on" another layer, it can be understood that the above-described layer may be in direct contact with the other layers described above, or a third layer may be present between them.
第1圖係表示本發明第1實現例之金屬母材鎢塗層方法之流程圖,第2~4圖係該模式圖。 Fig. 1 is a flow chart showing a method of coating a metal base material with a tungsten coating according to a first embodiment of the present invention, and Figs. 2 to 4 are views of the same.
首先,準備鋁或鋁合金制之金屬母材(11)(第2圖)。 First, a metal base material (11) made of aluminum or aluminum alloy is prepared (Fig. 2).
上述金屬母材(11)經過包括脫脂工序、水洗工序、蝕刻工序及電解脫脂工序等之前處理工序。 The metal base material (11) is subjected to a pretreatment process including a degreasing step, a water washing step, an etching step, and an electrolytic degreasing step.
為了使金屬母材(11)容易形成塗膜,在上述前處理工序中為去除表面油垢而將金屬母材(11)放入60~80℃之脫脂液中進行脫脂工序(Cleaning,Degreesing)後,進行水洗工序來去除上述脫脂液及雜質。而後進行蝕刻工序(etching)來增加表面積,之後進行電解脫脂工序(electrocleaning)。這種前處理工序,除上述工序外還可以增加或代替施加超聲波等之前處理工序。 In order to facilitate the formation of a coating film in the metal base material (11), the metal base material (11) is placed in a degreasing liquid at 60 to 80 ° C for degreasing step (Cleaning, Degreeing) in the pretreatment step. A water washing step is performed to remove the above-mentioned degreasing liquid and impurities. Then, an etching process is performed to increase the surface area, and then an electrolytic degreasing process (electrocleaning) is performed. In this pretreatment step, in addition to the above steps, a pretreatment process such as applying ultrasonic waves may be added or replaced.
而後,對金屬母材(11)表面進行陽極氧化,從而形成在上述金屬母材(11)表面設有氣孔之陽極氧化塗膜(13)(第3圖)。 Then, the surface of the metal base material (11) is anodized to form an anodized coating film (13) having pores on the surface of the metal base material (11) (Fig. 3).
具體說明係,將金屬母材(11)作為陽極(positive electrode),並將該金屬母材(11)浸漬於包括酸之陽極酸性電解質後施加電壓而發生陽極化(Anodization)。此時,通過所施加之電壓使金屬母材(11)從表面電氧化,使上述金屬母材(11)表面轉化為作為陽極氧化塗膜(13)之鋁氧化膜(Al2O3)。而後施加持續之電壓而相對金屬母材(11)形成垂直方向之陽極氧化塗膜(13)。 Specifically, the metal base material (11) is used as a positive electrode, and the metal base material (11) is immersed in an anodic acid electrolyte including an acid, and a voltage is applied to cause anodization. At this time, the metal base material (11) is electrically oxidized from the surface by the applied voltage, and the surface of the above metal base material (11) is converted into an aluminum oxide film (Al 2 O 3 ) as an anodized coating film (13). Then, a continuous voltage is applied to form a vertical anodic oxide coating film (13) with respect to the metal base material (11).
此時,用於氧化之陽極氧化電解質包括磷酸、草酸、磺酸及其組合所構成之群中選擇之一種酸,其稀釋液(Dilute solution),最好係15~18重量%之磺酸或者1~5重量%之草酸水溶液。 At this time, the anodic oxidation electrolyte for oxidation includes an acid selected from the group consisting of phosphoric acid, oxalic acid, sulfonic acid, and a combination thereof, and the dilute solution is preferably 15 to 18% by weight of sulfonic acid or 1 to 5 wt% aqueous oxalic acid solution.
此時,陽極氧化為,施加0.1~100V之電壓,在25~100℃溫度條件進行0.5~5小時,本技術領域之技術人員可考慮酸之種類、納米氣孔之直徑及高有序性(highly ordered pore)等各種因素進行各種變形。 At this time, the anodic oxidation is performed by applying a voltage of 0.1 to 100 V, and the temperature is 25 to 100 ° C for 0.5 to 5 hours, and those skilled in the art can consider the type of the acid, the diameter of the nanopore and the high order (highly Various factors such as ordered pores are used for various deformations.
這種陽極氧化需要進行1次以上,必要時可進行2~4次,從而提高氣孔之高有序性。 This anodization needs to be carried out more than once, and if necessary, it can be carried out 2 to 4 times, thereby improving the order of the pores.
具有這樣形成之多數氣孔之陽極氧化塗膜(13)並非係完全之結晶型塗膜,而形成非結晶型Al2O3塗膜。該陽極氧化塗膜(13)雖向著金屬木材(11)側成長50%且向外部成長50%而顯示出陶瓷特性,但無與金屬母材(11)之龜裂性。在完全之結晶型塗膜(即利用噴塗形成在Al母材之Al2O3塗膜)之情況下,因為係完全之陶瓷結晶,從而與Al母材相比時體現出4倍之熱膨脹特性。 The anodized coating film (13) having a plurality of pores thus formed is not a completely crystalline coating film, but forms an amorphous Al 2 O 3 coating film. The anodized coating film (13) exhibits ceramic properties by 50% growth toward the metal wood (11) side and 50% growth to the outside, but has no cracking property with the metal base material (11). In the case of a completely crystalline coating film (that is, an Al 2 O 3 coating film formed by spraying on an Al base material), since it is completely ceramic crystal, it exhibits 4 times thermal expansion characteristics as compared with the Al base material. .
為提高上述陽極氧化後後續塗層工序之效率而進行洗滌工序。由於這種工序需要很高之精度,所以工序和工序之間必須進行徹底之水洗工序。 A washing step is performed to increase the efficiency of the subsequent coating step after the anodization. Since such a process requires high precision, a thorough water washing process must be performed between the process and the process.
然後,在上述氧化塗膜(13)上進行電解或無電解塗層工序,從而形成鎢鍍金膜(15)(第4圖)。 Then, an electrolysis or electroless plating process is performed on the above oxide coating film (13) to form a tungsten gold plating film (15) (Fig. 4).
鎢具有優秀之耐腐蝕性、耐等離子性及耐熱龜裂性,從而可提高金屬母材(11)之物性。 Tungsten has excellent corrosion resistance, plasma resistance and heat crack resistance, so that the physical properties of the metal base material (11) can be improved.
特別係在本發明中,在多孔性陽極氧化塗膜(13)上形成鎢鍍金膜(15),此時,如第3圖所示,陽極氧化塗膜(13)之氣孔內部存在鎢,在其上部進行鎢塗層。從而,提高了金屬母材(11)和鎢鍍金膜(15)之間之粘附力,形成鎢鍍金膜(15),最大程度上提高了其效果。 In particular, in the present invention, a tungsten gold plating film (15) is formed on the porous anodized coating film (13). At this time, as shown in Fig. 3, tungsten is present inside the pores of the anodized coating film (13). The upper part is coated with tungsten. Thereby, the adhesion between the metal base material (11) and the tungsten gold plating film (15) is improved, and the tungsten gold plating film (15) is formed, which maximizes the effect.
上述鎢鍍金膜(15)通過電解及鎢電解塗層工序所形成。 The tungsten gold plating film (15) is formed by an electrolysis and tungsten electrolytic coating process.
首先,電解鍍金工序,係通過製備作為電解鎢塗層液之包括Na2OWO3.H2O(5~50g/l)、Na2CO3(10~30g/l)、NH4OH(1~15g/l)、CH2OHCOONa(1~5g/l)、及Na3C6H5O7(20~50g/l)之水溶液(pH 6~7)後,將其溫度調至75~85℃,以1~10A/dm2之電流密度施加電力而進行。 First, the electrolytic gold plating process is carried out by preparing Na 2 OWO 3 as an electrolytic tungsten coating liquid. H 2 O (5~50g/l), Na 2 CO 3 (10~30g/l), NH 4 OH (1~15g/l), CH 2 OHCOONa (1~5g/l), and Na 3 C 6 After an aqueous solution (pH 6 to 7) of H 5 O 7 (20 to 50 g/l), the temperature was adjusted to 75 to 85 ° C, and electric power was applied at a current density of 1 to 10 A/dm 2 .
並且,無電解鍍金工序,通過製備作為無電解鎢塗層液之包括Na2WO4.2H2O(10~30g/l)、NiCl2.6H2O(5~15g/l)、NaH2PO2.H2O(10~30g/l)、CH2OHCOONa(5~15g/l)、Na3C6H5O7(5~10g/l)、CH4N2S(5~10g/l)、Na2CO3(10~25g/l)、NH4NF2(5~15%)之水溶液(pH 8~10)後,將其溫度調至80~90℃而進行。 Moreover, the electroless gold plating process comprises preparing Na 2 WO 4 as an electroless tungsten coating liquid. 2H 2 O (10~30g/l), NiCl 2 . 6H 2 O (5~15g/l), NaH 2 PO 2 . H 2 O (10~30g/l), CH 2 OHCOONa (5~15g/l), Na 3 C 6 H 5 O 7 (5~10g/l), CH 4 N 2 S (5~10g/l) After an aqueous solution (pH 8 to 10) of Na 2 CO 3 (10 to 25 g/l) and NH 4 NF 2 (5 to 15%), the temperature was adjusted to 80 to 90 ° C.
此時,在鎢鍍金膜(15)具有5~50μm厚度為止的時間內,進行上述電解及無電解鍍金工序。如果上述鎢鍍金膜(15)之厚度未滿5μm,會導致嚴重降低耐等離子特性之問題,如果上述鎢鍍金膜(15)之厚度超過50μm,會發生上面提及之先前鎢鍍金膜之氣泡問題及介面剝離問題,從而維持在上述範圍。 At this time, the electrolysis and the electroless gold plating process are performed in a time period in which the tungsten gold plating film (15) has a thickness of 5 to 50 μm. If the thickness of the tungsten gold plating film (15) is less than 5 μm, the problem of severely resisting plasma characteristics may be caused. If the thickness of the tungsten gold plating film (15) exceeds 50 μm, the bubble problem of the above-mentioned prior tungsten gold plating film may occur. And the problem of interface peeling, so as to maintain the above range.
在形成上述鎢鍍金膜(15)後進行水洗工序及乾燥工序。 After the tungsten gold plating film (15) is formed, a water washing step and a drying step are performed.
而後對上述金屬母材進行熱處理來完成工序。 Then, the above metal base material is subjected to heat treatment to complete the process.
上述熱處理係在350~600℃的氧化還原條件下進行,通過這種熱處理,來獲得提高鎢鍍金膜(15)之膜之密度且提高陽極氧化塗膜(13)之粘附力之效果。如果熱處理溫度未滿350℃,會導致降低鎢塗膜之機械特性,與此相反地如超過600℃,會導致母材損傷及陽極氧化塗膜發生龜裂等問題,從而維持在上述範圍。 The above heat treatment is carried out under redox conditions of 350 to 600 ° C. By this heat treatment, the effect of increasing the density of the film of the tungsten gold plating film (15) and improving the adhesion of the anodized film (13) is obtained. If the heat treatment temperature is less than 350 ° C, the mechanical properties of the tungsten coating film are lowered. On the contrary, if the temperature exceeds 600 ° C, the base material is damaged and the anodized coating film is cracked, and the like, and the above range is maintained.
如上所述,本發明中通過陽極氧化在金屬母材(11)表面形成多孔結構之陽極氧化塗膜(13)來確保耐等離子性及耐熱龜裂性,在其上部形成鎢鍍金膜(15)而具有耐腐蝕性,在多孔結構之陽極氧化塗膜(13)之氣孔內部存在鎢,從而具有可解除陽極氧化塗膜(13)和鎢鍍金膜(15)之間剝離之效果。 As described above, in the present invention, an anodized coating film (13) having a porous structure is formed on the surface of the metal base material (11) by anodization to ensure plasma resistance and heat crack resistance, and a tungsten gold plating film is formed on the upper portion thereof (15). Further, it has corrosion resistance, and tungsten is present inside the pores of the anodic oxide coating film (13) having a porous structure, thereby having the effect of releasing the peeling between the anodized coating film (13) and the tungsten gold plating film (15).
在先前金屬母材(11)上進行如鎢等金屬層之塗層時,由於金屬母材(11)和金屬層之間之粘附力低,為提高粘附力而需進行鋅酸鹽(Zincate)處理或在金屬母材(11)與金屬層之間附加設置粘附層,而在本發明中無需進行這些工序,從而具有使工序變得簡單化、降低製造成本之效果。 When a coating of a metal layer such as tungsten is applied to the prior metal base material (11), since the adhesion between the metal base material (11) and the metal layer is low, zincate is required to improve adhesion ( In the Zincate treatment, an adhesion layer is additionally provided between the metal base material (11) and the metal layer, and in the present invention, it is not necessary to carry out these steps, which has the effect of simplifying the process and reducing the manufacturing cost.
並且,本發明進一步包括,在上述陽極氧化塗膜形成後,通過電解鍍金工序在上述陽極氧化塗膜上形成鎳鍍金膜之階段。 Furthermore, the present invention further includes a step of forming a nickel gold plating film on the anodized film by an electrolytic gold plating process after the anodized film is formed.
上述鎳鍍金膜位於陽極氧化塗膜及鎢鍍金膜之間,從而提高與這些之介面粘附性,提高上述陽極氧化塗膜和鎢鍍金膜之間之粘附性。 The nickel gold plating film is disposed between the anodized coating film and the tungsten gold plating film to improve the adhesion to the interface and improve the adhesion between the anodized coating film and the tungsten gold plating film.
第5圖係表示本發明第2實現例之金屬母材鎢塗層方法之流程圖,第6~7圖係該模式圖。 Fig. 5 is a flow chart showing a method of coating a metal base material with a tungsten coating according to a second embodiment of the present invention, and Figs. 6 to 7 are views of the same.
具體說明係,在金屬母材之表面將陽極氧化而形成氧化塗膜。 Specifically, the surface of the metal base material is anodized to form an oxide coating film.
對此時陽極氧化之具體內容可參照第1實現例中記載。 The details of the anodization in this case can be referred to in the first embodiment.
然後,通過電解鍍金在上述形成陽極氧化塗膜(13)之金屬母材(11)形成鎳鍍金膜(17)(參照第7圖)。 Then, a nickel gold plating film (17) is formed on the metal base material (11) forming the anodized coating film (13) by electrolytic gold plating (refer to Fig. 7).
上述電解鍍金工序,係以電解鎳鍍金液製備包括NiSO4.6H2O(100~500g/l)、NiCl2.6H2O(20~80g/l)、H3BO3(20~50g/l)之水溶液(pH 8~10)後,將其溫度調至40~80℃,以1~20A/dm2之電流密度施加電力而進行。 The above electroplating gold plating process is performed by electrolytic nickel plating gold plating solution including NiSO 4 . 6H 2 O (100~500g/l), NiCl 2 . After 6H 2 O (20~80g/l) and H 3 BO 3 (20~50g/l) aqueous solution (pH 8~10), adjust the temperature to 40~80°C, 1~20A/dm 2 The current density is applied by applying electric power.
此時,鎳鍍金膜(17)如第6圖所示,在陽極氧化塗膜(13)之氣孔內部存在鎳,在其上部塗覆有鎳。其結果,提高了金屬母材(11)和鎳鍍金膜(17)間之粘附力,在其上部形成後續之鎢鍍金膜(19)。 At this time, as shown in Fig. 6, the nickel gold plating film (17) has nickel inside the pores of the anodized coating film (13) and nickel on the upper portion thereof. As a result, the adhesion between the metal base material (11) and the nickel gold plating film (17) is improved, and a subsequent tungsten gold plating film (19) is formed on the upper portion thereof.
然後,通過在上述鎳鍍金膜(17)上進行電解或無電解鍍金工序來形成鎢鍍金膜(19)(參照第7圖)。 Then, a tungsten gold plating film (19) is formed by performing electrolysis or electroless gold plating on the nickel gold plating film (17) (see Fig. 7).
上述鎢鍍金膜(19)通過電解或無電解工序進行,詳細之工序參照上述第1實現例中記載。 The tungsten gold plating film (19) is carried out by electrolysis or electroless process, and the detailed steps are described in the first embodiment.
其次,對上述金屬母材進行熱處理來完成工序。 Next, the metal base material is subjected to heat treatment to complete the process.
此時,在熱處理之前形成上述鎢鍍金膜(19),而後進行乾燥工序。 At this time, the tungsten gold plating film (19) is formed before the heat treatment, and then a drying step is performed.
通過上述各階段,順次在本發明金屬母材表面形成陽極氧化塗膜/鎢鍍金膜或者陽極氧化塗膜/鎳鍍金膜/鎢鍍金膜。 Through the above stages, an anodized coating film/tungsten gold plating film or an anodized coating film/nickel gold plating film/tungsten gold plating film is sequentially formed on the surface of the metal base material of the present invention.
根據本發明之金屬母材之表面工序用於半導體及TFT-LCD製造裝置之真空室及真空室內部所使用之加熱器及噴頭(空氣擴散器)等之各種輔材之表面處理。 The surface process of the metal base material according to the present invention is used for surface treatment of various auxiliary materials such as a heater and a shower head (air diffuser) used in a vacuum chamber and a vacuum chamber of a semiconductor and a TFT-LCD manufacturing apparatus.
上述輔材之主要材料為鋁或鋁合金所構成,在這種輔材之表面塗覆鎢,從而具有提高耐腐蝕性、耐等離子性及耐熱龜裂性之效果。如上所述,根據本發明之方法可最大限度地提高物性,提高鎢鍍金膜和輔材之間之粘附力,因工序簡單而具有與先前表面處理工序相比效果更為優秀且可降低費用之優點。 The main material of the above-mentioned auxiliary material is aluminum or an aluminum alloy, and tungsten is coated on the surface of the auxiliary material to have an effect of improving corrosion resistance, plasma resistance and heat crack resistance. As described above, according to the method of the present invention, the physical properties can be maximized, the adhesion between the tungsten gold plating film and the auxiliary material can be improved, and the process is simple and the effect is superior and the cost can be reduced as compared with the previous surface treatment process. The advantages.
為更易於理解本發明,以下公開優選之實施例。但係下述實施例僅為更易於理解本發明而提供,本發明之內容並不限於實施例中之內容。 For a better understanding of the invention, the preferred embodiments are disclosed below. However, the following examples are provided for easier understanding of the present invention, and the contents of the present invention are not limited to the contents of the examples.
通過先前方法對鋁基板進行脫脂、水洗、蝕刻及電解脫脂來進行前處理工序。 The aluminum substrate is subjected to degreasing, water washing, etching, and electrolytic degreasing by a prior method to carry out a pretreatment process.
然後,將經過前處理工序之鋁基板浸漬於磺酸及草酸 之重量比為1:5之0.5M濃度之酸溶液後,以此作為陽極,在28℃條件下供給0.2A/cm2電流60分鐘,從而形成陽極氧化塗膜。 Then, the aluminum substrate subjected to the pretreatment step was immersed in an acid solution having a concentration of 0.5 M in a weight ratio of sulfonic acid and oxalic acid of 1:5, and then used as an anode to supply a current of 0.2 A/cm 2 at 28 ° C. Minutes to form an anodized coating film.
用DI水將上述鋁基板水洗乾凈後浸漬於鎢鍍金膜形成用無電解鍍金槽(Na2WO4.2H2O(30g/l)、NiCl2.6H2O(5g/l)、NaH2PO2.H2O(12g/l)、CH2OHCOONa(5.5g/l)、Na3C6H5O7(10g/l)、CH4N2S(5g/l)、Na2CO3(15g/l)、NH4NF2(12%))中,pH 10、90℃溫度條件下攪拌、沈澱30分鐘。利用這種無電解方式在陽極氧化塗膜上形成25μm厚度之鎢鍍金膜。 The aluminum substrate was washed with DI water and immersed in an electroless gold plating bath for forming a tungsten gold plating film (Na 2 WO 4 .2H 2 O (30 g/l), NiCl 2 .6H 2 O (5 g/l), NaH. 2 PO 2 .H 2 O (12 g/l), CH 2 OHCOONa (5.5 g/l), Na 3 C 6 H 5 O 7 (10 g/l), CH 4 N 2 S (5 g/l), Na 2 In CO 3 (15 g/l) and NH 4 NF 2 (12%), the mixture was stirred and precipitated at pH 10 and 90 ° C for 30 minutes. A tungsten-plated gold film having a thickness of 25 μm was formed on the anodized film by this electroless method.
而後,水洗乾凈後在常溫下乾燥1個小時,而後在氧氣環境下以400℃條件進行熱處理2個小時。 Then, after washing with water, it was dried at normal temperature for 1 hour, and then heat-treated at 400 ° C for 2 hours in an oxygen atmosphere.
通過先前方法對鋁基板進行脫脂、水洗、蝕刻及電解脫脂來進行前處理工序。 The aluminum substrate is subjected to degreasing, water washing, etching, and electrolytic degreasing by a prior method to carry out a pretreatment process.
然後,將經過前處理工序之鋁基板浸漬於磺酸及草酸之重量比為1:5之0.5M濃度之酸溶液後,以此作為陽極,在28℃條件下供給0.2A/cm2電流60分鐘,從而形成陽極氧化塗膜。 Then, the aluminum substrate subjected to the pretreatment step was immersed in an acid solution having a concentration of 0.5 M in a weight ratio of sulfonic acid and oxalic acid of 1:5, and then used as an anode to supply a current of 0.2 A/cm 2 at 28 ° C. Minutes to form an anodized coating film.
用DI水將上述鋁基板水洗乾凈後浸漬於鎢鍍金膜形成用電解槽(Na2OWO3.H2O(20g/l)、Na2CO3(10g/l)、NH4OH(5g/l)、CH2OHCOONa(1g/l)、及Na3C6H5O7(15g/l))中,而後供給5A電流40分鐘。利用這種電解方式在陽極氧化塗膜上形成25μm厚度之鎢鍍金膜。 The aluminum substrate was washed with DI water and immersed in an electrolytic cell for forming a tungsten gold plating film (Na 2 OWO 3 .H 2 O (20 g/l), Na 2 CO 3 (10 g/l), NH 4 OH (5 g). /l), CH 2 OHCOONa (1 g/l), and Na 3 C 6 H 5 O 7 (15 g/l)), and then supplied a 5 A current for 40 minutes. A tungsten-plated gold film having a thickness of 25 μm was formed on the anodized film by this electrolytic method.
而後,水洗乾淨後在常溫下乾燥1個小時,而後在氧氣 環境下以400℃條件熱處理2個小時。 Then, after washing with water, it is dried at room temperature for 1 hour and then in oxygen. Heat treatment at 400 ° C for 2 hours under the environment.
通過先前方法對鋁基板進行脫脂、水洗、蝕刻及電解脫脂來進行前處理工序。 The aluminum substrate is subjected to degreasing, water washing, etching, and electrolytic degreasing by a prior method to carry out a pretreatment process.
然後,將經過前處理工序之鋁基板浸漬於磺酸及草酸之重量比為1:5之0.5M濃度之酸溶液後,以此作為陽極,在28℃條件下供給0.2A/cm2電流60分鐘,從而形成陽極氧化塗膜。 Then, the aluminum substrate subjected to the pretreatment step was immersed in an acid solution having a concentration of 0.5 M in a weight ratio of sulfonic acid and oxalic acid of 1:5, and then used as an anode to supply a current of 0.2 A/cm 2 at 28 ° C. Minutes to form an anodized coating film.
將上述鋁基板水洗乾凈後浸漬於鎳鍍金膜形成用電解槽(NiSO4.6H2O(400g/l)、NiCl2.6H2O(20g/l)、H3BO3(30g/l)),而後供給20A電流10分鐘,在陽極氧化塗膜上形成5μm厚度之鎳鍍金膜。 The aluminum substrate was washed with water and immersed in an electrolytic cell for forming a nickel gold plating film (NiSO 4 .6H 2 O (400 g/l), NiCl 2 .6H 2 O (20 g/l), H 3 BO 3 (30 g/l). )), and then a current of 20 A was supplied for 10 minutes to form a nickel-plated gold film having a thickness of 5 μm on the anodized film.
而後,用DI水仔細清洗後,再次將上述鋁基板浸漬於鎢鍍金膜形成用電解槽(Na2OWO3.H2O(20g/l)、Na2CO3(10g/l)、NH4OH(5g/l)、CH2OHCOONa(1g/l)、及Na3C6H5O7(15g/l)),而後供給5A電流40分鐘,形成30μm厚度之鎢鍍金膜。 Then, after careful washing with DI water again with the cell above the aluminum plate was immersed (Na 2 OWO 3 .H 2 O (20g / l), Na 2 CO 3 (10g / l), NH 4 plated film formed on the tungsten OH (5 g/l), CH 2 OHCOONa (1 g/l), and Na 3 C 6 H 5 O 7 (15 g/l)), and then supplied a 5 A current for 40 minutes to form a tungsten gold-plated film having a thickness of 30 μm.
而後,在4℃條件乾燥4個小時,而後在氧氣環境下以400℃條件熱處理4個小時。 Thereafter, it was dried at 4 ° C for 4 hours, and then heat-treated at 400 ° C for 4 hours in an oxygen atmosphere.
通過先前方法對鋁基板進行脫脂、水洗、蝕刻及電解脫脂來進行前處理工序。 The aluminum substrate is subjected to degreasing, water washing, etching, and electrolytic degreasing by a prior method to carry out a pretreatment process.
將上述鋁基板水洗乾凈後浸漬於鎳鍍金膜形成用電解槽(NiSO4.6H2O(400g/l)、NiCl2.6H2O(20g/l)、H3BO3(30g/l)), 而後供給20A電流10分鐘,在陽極氧化塗膜上形成5μm厚度之鎳鍍金膜。 The aluminum substrate was washed with water and immersed in an electrolytic cell for forming a nickel gold plating film (NiSO 4 .6H 2 O (400 g/l), NiCl 2 .6H 2 O (20 g/l), H 3 BO 3 (30 g/l). )), and then a current of 20 A was supplied for 10 minutes to form a nickel-plated gold film having a thickness of 5 μm on the anodized film.
通過先前方法對鋁基板進行脫脂、水洗、蝕刻及電解脫脂來進行前處理工序。 The aluminum substrate is subjected to degreasing, water washing, etching, and electrolytic degreasing by a prior method to carry out a pretreatment process.
然後,將經過前處理工序之鋁基板浸漬於磺酸及草酸之重量比為1:5之0.5M濃度之酸溶液後,以此作為陽極,在28℃條件下供給0.2A/cm2電流60分鐘,從而形成陽極氧化塗膜。 Then, the aluminum substrate subjected to the pretreatment step was immersed in an acid solution having a concentration of 0.5 M in a weight ratio of sulfonic acid and oxalic acid of 1:5, and then used as an anode to supply a current of 0.2 A/cm 2 at 28 ° C. Minutes to form an anodized coating film.
為確認通過上述實施例1係否在上述基板上形成鎢鍍金膜,通過掃描電子顯微鏡(SEM)和EDAX對其表面成分進行分析,其結果如第8圖所示。 In order to confirm whether or not the tungsten gold plating film was formed on the above substrate by the above-described Example 1, the surface components were analyzed by a scanning electron microscope (SEM) and EDAX, and the results are shown in Fig. 8.
第8圖之係表示實施例1之鎢鍍金膜表面成分之吸收光譜。 Fig. 8 shows the absorption spectrum of the surface component of the tungsten gold plating film of Example 1.
參照第8圖之,可知在陽極氧化塗膜上形成30%之鎢(W)。 Referring to Fig. 8, it is understood that 30% of tungsten (W) is formed on the anodized film.
第9圖係表示實施例1中製造之鎢鍍金膜正面相片,第10圖係表示實施例1中積層在基板上之陽極氧化塗膜/鎢鍍金膜之側面相片。參照上述第9及10圖,可知在Al母材上形成陽極氧化塗膜(Anodizing膜),在其上形成鎢鍍金膜。 Fig. 9 is a front view showing a tungsten gold plating film produced in Example 1, and Fig. 10 is a side view showing an anodized coating film/tungsten gold plating film laminated on the substrate in Example 1. Referring to Figures 9 and 10 above, it was found that an anodized film (Anodizing film) was formed on the Al base material, and a tungsten gold plating film was formed thereon.
為測定由上述實施例1~實施例3及比較例1和比較例2所製造之基板之耐腐蝕性,將基板浸漬於HCl 10%溶液(25 ℃)後測定經時腐蝕程度,其測定結果如第8圖所示。 In order to measure the corrosion resistance of the substrates produced in the above Examples 1 to 3 and Comparative Example 1 and Comparative Example 2, the substrate was immersed in a HCl 10% solution (25). The degree of corrosion over time was measured after ° C), and the measurement results are shown in Fig. 8.
第11圖係表示實施例1~實施例3和比較例1及比較例2中之基板經時腐蝕程度之曲線圖。參照第11圖,可知在實施例1~實施例3之基板之情況下塗層膜之腐蝕程度低微。 Fig. 11 is a graph showing the degree of corrosion of the substrate in Examples 1 to 3 and Comparative Example 1 and Comparative Example 2. Referring to Fig. 11, it is understood that the degree of corrosion of the coating film in the case of the substrates of Examples 1 to 3 is low.
為測定上述實施例1~實施例3和比較例1及比較例2所製造之基板之耐等離子性,將基板放入PECVD室後,在380℃條件下利用NF3氣體發生等離子,來確定係否存在表面損傷,其結果如表1所示。 In order to measure the plasma resistance of the substrates produced in the above Examples 1 to 3 and Comparative Examples 1 and 2, the substrate was placed in a PECVD chamber, and plasma was generated by NF 3 gas at 380 ° C to determine the system. There is no surface damage, and the results are shown in Table 1.
為測定上述實施例1~實施例3所製造之基板之耐熱龜裂性,重複10次以500℃加熱後通過常溫下之水冷卻之過程,而後通過掃描電子顯微鏡對基板表面進行測定。 In order to measure the heat-resistant cracking property of the substrates produced in the above Examples 1 to 3, the process of heating at 500 ° C for 10 times and cooling by water at normal temperature was repeated 10 times, and then the surface of the substrate was measured by a scanning electron microscope.
第12圖係表示實施例1之鎢鍍金膜之掃描電子顯微鏡相片,第13圖係表示比較例1之鎳鍍金膜之掃描電子顯微鏡 相片,第14圖係表示比較例2之陽極氧化塗膜之掃描電子顯微鏡相片。 Fig. 12 is a scanning electron microscope photograph showing the tungsten gold plating film of Example 1, and Fig. 13 is a scanning electron microscope showing the nickel gold plating film of Comparative Example 1. Photograph, Fig. 14 shows a scanning electron microscope photograph of the anodized film of Comparative Example 2.
參照第12圖可知,通過本發明所製造之鎢鍍金膜不發生龜裂。於此相比地,可確認在第13及14圖中之在基板上單純形成鎳鍍金膜或陽極氧化塗膜之情況下發生龜裂。 Referring to Fig. 12, it is understood that the tungsten gold plating film produced by the present invention does not crack. In contrast, it was confirmed that cracks occurred in the case where a nickel gold plating film or an anodized film was simply formed on the substrate in FIGS. 13 and 14.
根據本發明之金屬母材之表面工序劑用於半導體及TFT-LCD製造裝置之真空室及真空室內部所使用之加熱器及噴頭(空氣擴散器)等之各種輔材之表面處理。 The surface process agent for a metal base material according to the present invention is used for surface treatment of various auxiliary materials such as a heater and a shower head (air diffuser) used in a vacuum chamber and a vacuum chamber of a semiconductor and a TFT-LCD manufacturing apparatus.
11‧‧‧金屬母材 11‧‧‧Metal base metal
13‧‧‧陽極氧化塗膜 13‧‧‧Anodized film
15、19‧‧‧鎢鍍金膜 15, 19‧‧‧ tungsten gold plating film
17‧‧‧形成鎳鍍金膜 17‧‧‧Formed nickel-plated gold film
第1圖係表示本發明第1實現例之金屬母材鎢塗層方法之流程圖,第2~4圖係該模式圖。 Fig. 1 is a flow chart showing a method of coating a metal base material with a tungsten coating according to a first embodiment of the present invention, and Figs. 2 to 4 are views of the same.
第5圖係表示本發明第2實現例之金屬母材鎢塗層方法之流程圖,第6~7圖係該模式圖。 Fig. 5 is a flow chart showing a method of coating a metal base material with a tungsten coating according to a second embodiment of the present invention, and Figs. 6 to 7 are views of the same.
第8圖之(a)係表示實施例1之鎢鍍金膜表面成分之吸收光譜。 Fig. 8(a) shows the absorption spectrum of the surface component of the tungsten gold plating film of Example 1.
第9圖係表示實施例1中製造之鎢鍍金膜正面相片。 Fig. 9 is a front view showing a tungsten gold plated film produced in Example 1.
第10圖係表示實施例1中積層在基板上之陽極氧化塗膜/鎢鍍金膜之側面相片。 Fig. 10 is a side view showing an anodized coating film/tungsten gold plating film laminated on a substrate in Example 1.
第11圖係表示實施例1~實施例3和比較例1及比較例2中之基板按時間之腐蝕程度之曲線圖。 Fig. 11 is a graph showing the corrosion degree of the substrate in Examples 1 to 3 and Comparative Example 1 and Comparative Example 2 over time.
第12圖係表示實施例1之鎢鍍金膜之掃描電子顯微鏡相片。 Fig. 12 is a scanning electron micrograph showing the tungsten gold plating film of Example 1.
第13圖係表示比較例1之鎳鍍金膜之掃描電子顯微鏡 相片。 Figure 13 is a scanning electron microscope showing the nickel-plated gold film of Comparative Example 1. photo.
第14圖係表示比較例2之陽極氧化塗膜之掃描電子顯微鏡相片。 Fig. 14 is a scanning electron micrograph showing the anodized film of Comparative Example 2.
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WO2014158767A1 (en) | 2013-03-14 | 2014-10-02 | Applied Materials, Inc. | High purity aluminum top coat on substrate |
US9663870B2 (en) | 2013-11-13 | 2017-05-30 | Applied Materials, Inc. | High purity metallic top coat for semiconductor manufacturing components |
US20180171497A1 (en) * | 2015-06-02 | 2018-06-21 | Seung Kyun Ryu | Structure for increasing strength and method for manufacturing the same |
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US5482749A (en) * | 1993-06-28 | 1996-01-09 | Applied Materials, Inc. | Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein |
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JPH07286296A (en) * | 1994-04-15 | 1995-10-31 | Asahi Techno Purodeyuusu:Kk | Method for electroless nickel plating aluminum or aluminum alloy |
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