TWI417976B - The detection system and detection method of cluster LED chip - Google Patents

The detection system and detection method of cluster LED chip Download PDF

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TWI417976B
TWI417976B TW100105958A TW100105958A TWI417976B TW I417976 B TWI417976 B TW I417976B TW 100105958 A TW100105958 A TW 100105958A TW 100105958 A TW100105958 A TW 100105958A TW I417976 B TWI417976 B TW I417976B
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led chip
cluster
working
detection system
cluster led
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TW100105958A
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TW201236096A (en
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Chroma Ate Inc
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叢集式LED晶片之檢測系統及檢測方法Cluster type LED chip detection system and detection method

本發明係關於一種叢集式LED晶片之檢測系統,尤指一種用以檢驗叢集式LED晶片之工作狀態之檢測系統。The invention relates to a detection system for a cluster LED chip, in particular to a detection system for checking the working state of a cluster LED chip.

隨著發光二極體(Light Emitting Diode;LED)技術的成熟,LED已經被廣泛的使用在照明領域中,而為了提供更多樣化的照明方式,集中複數顆LED於單一晶片上的叢集式LED晶片也受到許多廠商的重視。With the maturity of Light Emitting Diode (LED) technology, LEDs have been widely used in the field of illumination, and in order to provide a more diverse illumination method, a cluster of multiple LEDs on a single wafer is concentrated. LED chips are also valued by many manufacturers.

然而相較於只具有單一LED單元之LED晶片,叢集式LED晶片在檢測上一直存在有盲點,請參照第一圖,第一圖係為叢集式LED晶片之示意圖,一個叢集式LED晶片100會包括複數個LED單元11,當叢集式LED晶片100中有少數LED單元11異常時,可能會造成叢集式LED晶片100於點亮時有部份區域亮度較低,而習知技術中所使用的電性檢測方式,會有相當大的機率檢測不出這樣的異常狀況,這是因為少數LED單元11異常可能只會導致總電流非常微量的下降,並且使得總電流落在檢測的合格範圍之內。However, compared with LED chips with only a single LED unit, there is always a blind spot in the detection of cluster LED chips. Please refer to the first figure. The first picture is a schematic diagram of a cluster LED chip, and a cluster LED chip 100 will Including a plurality of LED units 11 , when a small number of LED units 11 in the cluster LED chip 100 are abnormal, the cluster LED chip 100 may cause partial brightness to be low when lighting, which is used in the prior art. The electrical detection method has a considerable probability that such abnormal conditions cannot be detected, because a few LED unit 11 abnormalities may only cause a very small drop in the total current, and the total current falls within the qualified range of detection. .

除此之外,習知技術也會利用光譜儀來檢測LED晶片的光學特性,然而這樣的光學檢測僅能檢查叢集式LED晶片100發出光線之整體顏色及亮度是否正確,仍舊無法檢測出叢集式LED晶片100上小範圍的暗區。In addition, the prior art also uses a spectrometer to detect the optical characteristics of the LED chip. However, such optical inspection can only check whether the overall color and brightness of the light emitted by the cluster LED chip 100 is correct, and the cluster LED cannot be detected yet. A small range of dark areas on the wafer 100.

緣此,本發明之主要目的係提供一種用以檢驗叢集式LED晶片之工作狀態之檢測系統以及檢測方法,該檢測系統與檢測方法能夠檢測叢集式LED晶片於點亮時之工作狀態,以判別叢集式LED晶片實際使用時是否有缺陷。Accordingly, the main object of the present invention is to provide a detection system and a detection method for inspecting an operation state of a cluster LED chip, wherein the detection system and the detection method can detect a working state of a cluster LED chip at the time of lighting to determine Whether the clustered LED chip is defective in actual use.

一種叢集式LED晶片之檢測系統,係用以檢測一叢集式LED晶片之工作狀態,該檢測系統係包含承載單元、電源供應器以及光學檢測機;承載單元係用以承載該叢集式LED晶片;電源供應器係用以提供該叢集式LED晶片一額定工作電流,藉以使該叢集式LED晶片發出一工作光束;光學檢測機係用以接收該工作光束,並據以判斷該工作狀態。A cluster LED chip detection system for detecting the working state of a cluster LED chip, the detection system comprising a carrier unit, a power supply, and an optical detector; the carrier unit is configured to carry the cluster LED chip; The power supply system is configured to provide a rated operating current of the clustered LED chip, so that the cluster LED chip emits a working beam; the optical detecting machine is configured to receive the working beam and determine the working state accordingly.

於本發明之一較佳實施例中,該光學檢測機係為一自動光學檢測機(Automated Optical Inspection;AOI)。In a preferred embodiment of the invention, the optical inspection machine is an Automated Optical Inspection (AOI).

於本發明之一較佳實施例中,該光學檢測機係包含影像擷取單元與判斷單元,影像擷取單元係用以接收該工作光束以得到一工作影像,並發送該工作影像;判斷單元係用以自該影像擷取單元接收該工作影像,並據以判斷該工作狀態;而此實施例中之較佳者,該判斷單元可以為一工業電腦。In a preferred embodiment of the present invention, the optical detecting device comprises an image capturing unit and a determining unit, wherein the image capturing unit is configured to receive the working beam to obtain a working image, and send the working image; The working image is received from the image capturing unit, and the working state is determined accordingly. In the preferred embodiment, the determining unit can be an industrial computer.

於本發明之一較佳實施例中,該判斷單元係將該工作影像區分為複數個比對區間,並對該些比對區間之亮度進行判別。In a preferred embodiment of the present invention, the determining unit divides the working image into a plurality of comparison intervals, and discriminates the brightness of the comparison intervals.

於本發明之一較佳實施例中,叢集式LED晶片之檢測系統更可以包含一衰減片,該衰減片係設置於該光學檢測機之前,藉以衰減該工作光束。In a preferred embodiment of the present invention, the detection system of the cluster LED chip may further include an attenuating sheet disposed in front of the optical detector to attenuate the working beam.

於本發明之一較佳實施例中,叢集式LED晶片之檢測系統更可以包含一電流調整單元,該電流調整單元係電性連結於該電源供應器與該叢集式LED晶片之間,藉以調整該額定工作電流。In a preferred embodiment of the present invention, the detection system of the cluster LED chip may further include a current adjustment unit electrically coupled between the power supply and the cluster LED chip to adjust The rated operating current.

本發明更揭露一種叢集式LED晶片之檢測方法,係包含以下步驟:(a)提供一額定工作電流至一叢集式LED晶片,藉以使該叢集式LED晶片發出一工作光束;(b)以一光學檢測機接收該工作光束,以得到一工作影像;(c)利用該光學檢測機對該工作影像進行判別,以得到一工作狀態。The invention further discloses a method for detecting a cluster LED chip, comprising the steps of: (a) providing a rated operating current to a cluster LED chip, thereby causing the cluster LED chip to emit a working beam; (b) The optical detector receives the working beam to obtain a working image; and (c) discriminates the working image by the optical detector to obtain an operating state.

相較於習知利用電性或光譜儀檢測叢集式LED晶片之檢測方式,本發明之叢集式LED晶片之檢測系統與檢測方法能夠於叢集式LED晶片點亮時,判別出叢集式LED晶片是否有不正常之暗區產生,因此能夠有效提昇檢測叢集式LED晶片之可靠度。Compared with the conventional detection method of detecting a cluster LED chip by using an electric or spectrometer, the detection system and the detection method of the cluster LED chip of the present invention can discriminate whether the cluster LED chip has a cluster LED chip when it is lit. Unusual dark areas are generated, so the reliability of the detection cluster LED chip can be effectively improved.

本發明所採用的具體實施例,將藉由以下之實施例及圖式作進一步之說明。The specific embodiments of the present invention will be further described by the following examples and drawings.

本發明係關於一種叢集式LED晶片之檢測系統,尤指一種用以檢驗叢集式LED晶片之工作狀態之檢測系統。以下茲列舉一較佳實施例以說明本發明,然熟習此項技藝者皆知此僅為一舉例,而並非用以限定發明本身。有關此較佳實施例之內容詳述如下。The invention relates to a detection system for a cluster LED chip, in particular to a detection system for checking the working state of a cluster LED chip. The invention is illustrated by the following description of the preferred embodiments of the invention, and is not intended to limit the invention. The contents of this preferred embodiment are detailed below.

請參閱第二圖與第三圖,第二圖係為本發明之檢測系統之第一較佳實施例示意圖,第三圖係為本發明之檢測系統之第二較佳實施例示意圖。本發明之叢集式LED晶片100之檢測系統,係用以檢測一叢集式LED晶片100之工作狀態,該檢測系統係包含承載單元21、電源供應器22以及光學檢測機23。Please refer to the second and third figures. The second figure is a schematic diagram of a first preferred embodiment of the detection system of the present invention, and the third figure is a schematic diagram of a second preferred embodiment of the detection system of the present invention. The detection system of the cluster LED chip 100 of the present invention is for detecting the working state of a cluster LED chip 100. The detection system includes a carrier unit 21, a power supply 22, and an optical detector 23.

承載單元21係用以承載該叢集式LED晶片100;電源供應器22係用以提供該叢集式LED晶片100一額定工作電流,藉以使該叢集式LED晶片100發出一工作光束。The load unit 21 is used to carry the cluster LED chip 100; the power supply 22 is used to provide a rated operating current of the cluster LED chip 100, so that the cluster LED chip 100 emits a working beam.

光學檢測機23係用以接收該工作光束,並據以判斷該工作狀態;其中,於本實施例之一較佳實施例,光學檢測機可以是一自動光學檢測機(Automated Optical Inspection;AOI),然而在習知技術中,AOI機台是用以檢測待測物之外觀是否有瑕疵,其檢測方式是以外置光源照亮待測物,其後再判斷待測物之表面是否有瑕疵,AOI機台之優點在於檢測外觀時能夠同時判斷瑕疵之位置,然而若待測物外觀之亮度太高,AOI機台就無法正確判斷待測物外觀是否有瑕疵以及瑕疵之位置。The optical detector 23 is configured to receive the working beam and determine the working state. The optical detector may be an automated optical inspection (AOI). However, in the prior art, the AOI machine is used to detect whether the appearance of the object to be tested is flawed, and the detection method is that the external light source illuminates the object to be tested, and then the surface of the object to be tested is judged to be flawed. The advantage of the AOI machine is that it can simultaneously determine the position of the cymbal when detecting the appearance. However, if the brightness of the appearance of the object to be tested is too high, the AOI machine cannot correctly judge whether the appearance of the object to be tested is defective or not.

因此若使用AOI機台作為本發明中之光學檢測機23,那麼於本實施例中之較佳者,檢測系統可以更包含一衰減片24,該衰減片24係設置於該光學檢測機23之前,藉以衰減該工作光束;又或者檢測系統可以包含一電流調整單元25,該電流調整單元25係電性連結於該電源供應器22與該叢集式LED晶片100之間,藉以調整該額定工作電流;上述兩種方式都可以降低光學檢測機23所接收到之光線之亮度,以使光學檢測機23能夠正確無誤的判斷出叢集式LED晶片100之工作狀態。Therefore, if the AOI machine is used as the optical detector 23 in the present invention, in the preferred embodiment, the detection system may further include an attenuator 24, which is disposed before the optical detector 23. The current adjustment unit 25 is electrically coupled between the power supply 22 and the cluster LED chip 100 to adjust the rated operating current. The current adjustment unit 25 is electrically coupled between the power supply 22 and the cluster LED chip 100. Both of the above methods can reduce the brightness of the light received by the optical detector 23, so that the optical detector 23 can correctly determine the operating state of the cluster LED chip 100.

為了讓檢測的效率更高,衰減片24可以是由至少一個衰減濾鏡所構成,並針對一或複數個波長之光線進行過濾,而最理想之狀況是讓光學檢測機23於叢集式LED晶片100正常工作時所接收之光線亮度差異小於1%,且光學檢測機23接收工作光束所需之曝光時間能夠控制在5ms之內,而當叢集式LED晶片100有暗區產生時,暗區之亮度僅有正常亮度之10%~80%;若是使用電流調整單元25來降低工作光束之亮度,將額定工作電流調低為原有的50%,那麼工作光束之亮度就會降低至60%,因此額定工作電流調低的幅度必須讓光學檢測機23所需之曝光時間能夠控制在5ms之內較為理想。In order to make the detection more efficient, the attenuating sheet 24 may be composed of at least one attenuation filter and filter for one or more wavelengths of light, and the most ideal condition is to have the optical detector 23 on the cluster LED chip. The difference in brightness of light received by 100 during normal operation is less than 1%, and the exposure time required for optical detector 23 to receive the working beam can be controlled within 5 ms, and when dark area of clustered LED chip 100 is generated, dark area The brightness is only 10%~80% of the normal brightness; if the current adjustment unit 25 is used to reduce the brightness of the working beam and the rated operating current is reduced to 50%, the brightness of the working beam will be reduced to 60%. Therefore, the amplitude of the rated operating current must be adjusted so that the exposure time required by the optical detector 23 can be controlled within 5 ms.

請參閱第四圖,第四圖係為工作影像之分區比對示意圖。於本實施例中之較佳者,光學檢測機23可以是包含影像擷取單元231與判斷單元232,影像擷取單元231係用以接收該工作光束以得到一工作影像P1,並發送該工作影像P1,判斷單元232係用以自該影像擷取單元231接收該工作影像P1,並據以判斷該工作狀態;而於本實施例中之較佳者,判斷單元可以是一工業電腦;此外,該判斷單元232可以將該工作影像P1區分為複數個比對區間Z1與Z2,並對該些比對區間Z1與Z2之亮度進行判別,即可得知叢集式LED晶片100是否有暗區產生;要強調的是,比對區間Z1與Z2可以依照叢集式LED晶片100上LED單元11之分佈位置做設計,但當然也可以是以任意形狀與大小做設計。Please refer to the fourth figure. The fourth picture is a schematic diagram of the partitioning of the working images. Preferably, the optical detector 23 includes an image capturing unit 231 and a determining unit 232. The image capturing unit 231 is configured to receive the working beam to obtain a working image P1, and send the work. The image P1, the determining unit 232 is configured to receive the working image P1 from the image capturing unit 231, and determine the working state according to the image; and in the preferred embodiment, the determining unit may be an industrial computer; The determining unit 232 can distinguish the working image P1 into a plurality of comparison intervals Z1 and Z2, and determine the brightness of the comparison intervals Z1 and Z2, so that the cluster LED chip 100 has a dark area. It is emphasized that the alignment intervals Z1 and Z2 can be designed according to the distribution position of the LED units 11 on the cluster LED chip 100, but of course, it can be designed in any shape and size.

請同時參閱第五圖,第五圖係為本發明之檢測方法流程圖。本發明之叢集式LED晶片之檢測方法係包含以下步驟:S101:點亮叢集式LED晶片100,使叢集式LED晶片100發射工作光束;S103:當光學檢測機23是AOI機台時,可以透過衰減片24衰減工作光束,或是透過電流調整單元25降低額定工作電流,藉以降低光學檢測機23所接收到之光線強度;S105:光學檢測機23接收叢集式LED晶片100所發出之工作光束;以及S107:光學檢測機23接收到工作光束之後得到工作影像P1,並對工作影像P1進行判別。Please also refer to the fifth figure, which is a flow chart of the detection method of the present invention. The method for detecting a cluster LED chip of the present invention comprises the following steps: S101: lighting the cluster LED chip 100 to cause the cluster LED chip 100 to emit a working beam; S103: when the optical detector 23 is an AOI machine, The attenuating sheet 24 attenuates the working beam, or reduces the rated operating current through the current adjusting unit 25, thereby reducing the intensity of the light received by the optical detector 23; S105: the optical detecting machine 23 receives the working beam emitted by the cluster LED chip 100; And S107: the optical detector 23 obtains the working image P1 after receiving the working beam, and discriminates the working image P1.

相較於習知利用電性或光譜儀檢測叢集式LED晶片100之檢測方式,本發明之叢集式LED晶片100之檢測系統與檢測方法能夠於叢集式LED晶片100點亮時,判別出叢集式LED晶片100是否有不正常之暗區產生,且若應用AOI機台於本發明之檢測系統與檢測方法中,亦可以克服習知AOI機台僅能檢測被動發光之待測物之缺點,綜合以上優點,可知本發明能夠非常有效的提昇檢測叢集式LED晶片100之可靠度。Compared with the conventional method for detecting the detection mode of the cluster LED chip 100 by using an electric or spectrometer, the detection system and the detection method of the cluster LED chip 100 of the present invention can discriminate the cluster LED when the cluster LED chip 100 is lit. Whether the wafer 100 has an abnormal dark area is generated, and if the AOI machine is used in the detection system and the detection method of the present invention, the shortcomings of the conventional AOI machine can only detect the passive illumination of the object to be tested, and the above Advantages, it can be seen that the present invention can very effectively improve the reliability of the detection cluster LED chip 100.

藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。The features and spirit of the present invention will be more apparent from the detailed description of the preferred embodiments. On the contrary, the intention is to cover various modifications and equivalents within the scope of the invention as claimed.

100...叢集式LED晶片100. . . Cluster LED chip

11...LED單元11. . . LED unit

21...承載單元twenty one. . . Bearer unit

22...電源供應器twenty two. . . Power Supplier

23...光學檢測機twenty three. . . Optical detector

231...影像擷取單元231. . . Image capture unit

232...判斷單元232. . . Judging unit

24...衰減片twenty four. . . Attenuator

25...電流調整單元25. . . Current adjustment unit

P1...工作影像P1. . . Working image

Z1、Z2...比對區間Z1, Z2. . . Comparison interval

S101~S107...檢測方法流程圖S101~S107. . . Detection method flow chart

第一圖係為叢集式LED晶片之示意圖;The first figure is a schematic diagram of a clustered LED chip;

第二圖係為本發明之檢測系統之第一較佳實施例示意圖;The second drawing is a schematic diagram of a first preferred embodiment of the detection system of the present invention;

第三圖係為本發明之檢測系統之第二較佳實施例示意圖;The third drawing is a schematic diagram of a second preferred embodiment of the detection system of the present invention;

第四圖係為工作影像之分區比對示意圖;以及The fourth picture is a schematic diagram of the partitioning of the working images;

第五圖係為本發明之檢測方法流程圖。The fifth figure is a flow chart of the detection method of the present invention.

100...叢集式LED晶片100. . . Cluster LED chip

21...承載單元twenty one. . . Bearer unit

22...電源供應器twenty two. . . Power Supplier

23...光學檢測機twenty three. . . Optical detector

231...影像擷取單元231. . . Image capture unit

232...判斷單元232. . . Judging unit

24...衰減片twenty four. . . Attenuator

Claims (8)

一種叢集式發光二極體(Light Emitting Diode;LED)晶片之檢測系統,係用以檢測一叢集式LED晶片之一工作狀態,該檢測系統係包含:一承載單元,係用以承載該叢集式LED晶片;一電源供應器,係用以提供該叢集式LED晶片一額定工作電流,藉以使該叢集式LED晶片發出一工作光束;一光學檢測機,係用以接收該工作光束,並據以判斷該工作狀態;以及一衰減片,係設置於該光學檢測機之前,藉以衰減該工作光束。 A detection system for a Light Emitting Diode (LED) chip for detecting a working state of a cluster LED chip, the detection system comprising: a carrying unit for carrying the cluster An LED power supply is provided for providing a rated operating current of the clustered LED chip, so that the cluster LED chip emits a working beam; an optical detecting machine is configured to receive the working beam, and Determining the working state; and an attenuating sheet disposed in front of the optical detector to attenuate the working beam. 如申請專利範圍第1項所述之叢集式LED晶片之檢測系統,其中該光學檢測機係為一自動光學檢測機(Automated Optical Inspection;AOI)。 The detection system of the cluster LED chip of claim 1, wherein the optical inspection machine is an Automatic Optical Inspection (AOI). 如申請專利範圍第1項所述之叢集式LED晶片之檢測系統,其中該光學檢測機係包含:一影像擷取單元,係用以接收該工作光束以得到一工作影像,並發送該工作影像;以及一判斷單元,係用以自該影像擷取單元接收該工作影像,並據以判斷該工作狀態。 The detection system of the cluster LED chip of claim 1, wherein the optical inspection system comprises: an image capturing unit for receiving the working beam to obtain a working image, and transmitting the working image And a determining unit for receiving the working image from the image capturing unit, and determining the working state accordingly. 如申請專利範圍第3項所述之叢集式LED晶片之檢測系統,其中該判斷單元係為一工業電腦。 The detection system of the cluster LED chip of claim 3, wherein the determining unit is an industrial computer. 如申請專利範圍第3項所述之叢集式LED晶片之檢測系統,其中該判斷單元係將該工作影像區分為複數個比對 區間,並對該些比對區間之亮度進行判別。 The detection system of the cluster LED chip of claim 3, wherein the determining unit divides the working image into a plurality of comparisons. The interval is determined by the brightness of the comparison intervals. 如申請專利範圍第1項所述之叢集式LED晶片之檢測系統,更包含一電流調整單元,該電流調整單元係電性連結於該電源供應器與該叢集式LED晶片之間,藉以調整該額定工作電流。 The detection system of the clustered LED chip of claim 1, further comprising a current adjustment unit electrically coupled between the power supply and the cluster LED chip, thereby adjusting the Rated operating current. 一種叢集式LED晶片之檢測方法,係包含:(a)提供一額定工作電流至一叢集式LED晶片,藉以使該叢集式LED晶片發出一工作光束;(b0)提供一衰減片於該光學檢測機之前,藉以衰減該工作光束;(b)以一光學檢測機接收該工作光束,以得到一工作影像;以及(c)利用該光學檢測機將該工作影像區分為複數個比對區間,並對該些比對區間之亮度進行判別,以得到一工作狀態;其中,該額定工作電流之大小係與該工作光束之亮度有一比例關係。 A method for detecting a cluster LED chip, comprising: (a) providing a rated operating current to a cluster LED chip, thereby causing the cluster LED chip to emit a working beam; (b0) providing an attenuating sheet for the optical inspection Before the machine, the working beam is attenuated; (b) receiving the working beam by an optical detector to obtain a working image; and (c) using the optical detector to divide the working image into a plurality of comparison intervals, and The brightness of the comparison intervals is determined to obtain an operating state; wherein the magnitude of the rated operating current is proportional to the brightness of the working beam. 如申請專利範圍第7項所述之叢集式LED晶片之檢測方法,於步驟(a)中,更包含提供一電流調整單元,使該電流調整單元電性連結於該電源供應器與該叢集式LED晶片之間,藉以調整該額定工作電流。 The method for detecting a cluster LED chip according to claim 7, wherein in the step (a), the method further comprises: providing a current adjustment unit, the current adjustment unit being electrically connected to the power supply and the cluster Between the LED chips, to adjust the rated operating current.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM362493U (en) * 2009-03-05 2009-08-01 Hiromi System Co Ltd Testing device for display
TW201030714A (en) * 2008-12-11 2010-08-16 Sony Corp Display apparatus, luminance adjusting device, backlight device, luminance adjusting method, and program

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100562761C (en) * 2006-06-22 2009-11-25 上海理工大学 Intelligent light-emitting diode (LED) car lamp lighting quality on-line detecting system
CN201149540Y (en) * 2007-10-25 2008-11-12 珠海华冠光电技术有限公司 LED optical detector
CN201247098Y (en) * 2008-09-03 2009-05-27 长春希达电子技术有限公司 Test system for LED display screen pixel array light intensity distribution
CN101738251A (en) * 2008-11-12 2010-06-16 纬创资通股份有限公司 Automatic test system and method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201030714A (en) * 2008-12-11 2010-08-16 Sony Corp Display apparatus, luminance adjusting device, backlight device, luminance adjusting method, and program
TWM362493U (en) * 2009-03-05 2009-08-01 Hiromi System Co Ltd Testing device for display

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