TWI417645B - Mask mask and mask, and its manufacturing methods - Google Patents

Mask mask and mask, and its manufacturing methods Download PDF

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Publication number
TWI417645B
TWI417645B TW096106700A TW96106700A TWI417645B TW I417645 B TWI417645 B TW I417645B TW 096106700 A TW096106700 A TW 096106700A TW 96106700 A TW96106700 A TW 96106700A TW I417645 B TWI417645 B TW I417645B
Authority
TW
Taiwan
Prior art keywords
light
shielding film
film
pattern
reticle blank
Prior art date
Application number
TW096106700A
Other languages
English (en)
Chinese (zh)
Other versions
TW200739247A (en
Inventor
Yamada Takeyuki
Mitsui Masaru
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200739247A publication Critical patent/TW200739247A/zh
Application granted granted Critical
Publication of TWI417645B publication Critical patent/TWI417645B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
TW096106700A 2006-02-28 2007-02-27 Mask mask and mask, and its manufacturing methods TWI417645B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006052621 2006-02-28

Publications (2)

Publication Number Publication Date
TW200739247A TW200739247A (en) 2007-10-16
TWI417645B true TWI417645B (zh) 2013-12-01

Family

ID=38459016

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106700A TWI417645B (zh) 2006-02-28 2007-02-27 Mask mask and mask, and its manufacturing methods

Country Status (4)

Country Link
JP (1) JP5412107B2 (ko)
KR (2) KR101071471B1 (ko)
TW (1) TWI417645B (ko)
WO (1) WO2007099910A1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100390007B1 (ko) * 2002-02-05 2003-07-04 주식회사 엔비자인 미네랄이 보존되는 나노여과 정수방법
JP2008203373A (ja) * 2007-02-16 2008-09-04 Clean Surface Gijutsu:Kk ハーフトーンブランクス及びハーフトーンブランクスの製造方法
JP6594742B2 (ja) * 2014-11-20 2019-10-23 Ｈｏｙａ株式会社 フォトマスクブランク及びそれを用いたフォトマスクの製造方法、並びに表示装置の製造方法
JP6301383B2 (ja) * 2015-03-27 2018-03-28 Hoya株式会社 フォトマスクブランク及びこれを用いたフォトマスクの製造方法、並びに表示装置の製造方法
JP6540278B2 (ja) * 2015-06-29 2019-07-10 大日本印刷株式会社 光学素子の製造方法
JP7113724B2 (ja) * 2017-12-26 2022-08-05 Hoya株式会社 フォトマスクブランクおよびフォトマスクの製造方法、並びに表示装置の製造方法
JP6855645B1 (ja) * 2019-06-27 2021-04-07 Hoya株式会社 薄膜付基板、多層反射膜付基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP7154626B2 (ja) * 2019-11-26 2022-10-18 Hoya株式会社 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
KR102444967B1 (ko) * 2021-04-29 2022-09-16 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02212841A (ja) * 1989-02-14 1990-08-24 Toppan Printing Co Ltd フオトマスクおよびフオトマスクブランク
JPH10163105A (ja) * 1996-11-23 1998-06-19 Lg Semicon Co Ltd Ｘ線マスクの吸収体及びその製造方法
TWI226971B (en) * 2002-12-03 2005-01-21 Hoya Corp Photomask blank and photomask
TW200535561A (en) * 2004-04-08 2005-11-01 Schott Ag Mask blank, photomask and manufacturing method therefor

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2785313B2 (ja) * 1989-04-05 1998-08-13 凸版印刷株式会社 フオトマスクブランクおよびフオトマスク
JPH05297570A (ja) * 1992-04-20 1993-11-12 Toppan Printing Co Ltd フォトマスクブランクの製造方法
JPH07118829A (ja) * 1993-10-19 1995-05-09 Nissin Electric Co Ltd 窒化クロム膜被覆基体及びその製造方法
JPH11172426A (ja) * 1997-12-05 1999-06-29 Ulvac Corp 薄膜の結晶配向性制御成膜法
EP1022614B1 (en) * 1998-07-31 2012-11-14 Hoya Corporation Photomask blank, photomask, methods of manufacturing the same, and method of forming micropattern
JP4256038B2 (ja) * 1999-09-21 2009-04-22 株式会社東芝 熱処理方法
JP2002189280A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
JP4158885B2 (ja) * 2002-04-22 2008-10-01 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法
JP3934115B2 (ja) * 2003-03-26 2007-06-20 Ｈｏｙａ株式会社 フォトマスク用基板、フォトマスクブランク、及びフォトマスク
JP2005101226A (ja) * 2003-09-24 2005-04-14 Hoya Corp 基板保持装置，基板処理装置，基板検査装置及び基板保持方法
JP2005317929A (ja) * 2004-03-29 2005-11-10 Hoya Corp ポジ型レジスト膜の剥離方法及び露光用マスクの製造方法、並びにレジスト剥離装置
JP4361830B2 (ja) * 2004-05-13 2009-11-11 信越化学工業株式会社 レジストパターン寸法の面内分布の評価方法、フォトマスクブランクの製造方法、フォトマスクブランク、及びレジストパターン形成工程の管理方法
KR20070039910A (ko) * 2004-06-02 2007-04-13 호야 가부시키가이샤 마스크 블랭크 및 그 제조 방법과 전사 플레이트의제조방법
JP2005010814A (ja) * 2004-10-01 2005-01-13 Hoya Corp グレートーンマスク及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02212841A (ja) * 1989-02-14 1990-08-24 Toppan Printing Co Ltd フオトマスクおよびフオトマスクブランク
JPH10163105A (ja) * 1996-11-23 1998-06-19 Lg Semicon Co Ltd Ｘ線マスクの吸収体及びその製造方法
TWI226971B (en) * 2002-12-03 2005-01-21 Hoya Corp Photomask blank and photomask
TW200535561A (en) * 2004-04-08 2005-11-01 Schott Ag Mask blank, photomask and manufacturing method therefor

Also Published As

Publication number Publication date
JPWO2007099910A1 (ja) 2009-07-16
KR20080106307A (ko) 2008-12-04
KR20100124333A (ko) 2010-11-26
TW200739247A (en) 2007-10-16
KR101071471B1 (ko) 2011-10-10
WO2007099910A1 (ja) 2007-09-07
KR101248740B1 (ko) 2013-03-28
JP5412107B2 (ja) 2014-02-12

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