TWI417532B - 用於多階衝擊器之多微孔噴嘴板之製造方法 - Google Patents
用於多階衝擊器之多微孔噴嘴板之製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 238000005323 electroforming Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000002245 particle Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000005427 atmospheric aerosol Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- XIKYYQJBTPYKSG-UHFFFAOYSA-N nickel Chemical compound [Ni].[Ni] XIKYYQJBTPYKSG-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B44—DECORATIVE ARTS
- B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
- B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
- B44C1/22—Removing surface-material, e.g. by engraving, by etching
- B44C1/227—Removing surface-material, e.g. by engraving, by etching by etching
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/02—Devices for withdrawing samples
- G01N1/22—Devices for withdrawing samples in the gaseous state
- G01N1/2202—Devices for withdrawing samples in the gaseous state involving separation of sample components during sampling
- G01N1/2208—Devices for withdrawing samples in the gaseous state involving separation of sample components during sampling with impactors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/02—Investigating particle size or size distribution
- G01N15/0255—Investigating particle size or size distribution with mechanical, e.g. inertial, classification, and investigation of sorted collections
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/02—Investigating particle size or size distribution
- G01N15/0255—Investigating particle size or size distribution with mechanical, e.g. inertial, classification, and investigation of sorted collections
- G01N2015/0261—Investigating particle size or size distribution with mechanical, e.g. inertial, classification, and investigation of sorted collections using impactors
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- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
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- General Physics & Mathematics (AREA)
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- Engineering & Computer Science (AREA)
- Molecular Biology (AREA)
- Biomedical Technology (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Nozzles (AREA)
Description
本發明係與大氣微粒分徑採集裝置有關,特別是指一種用於多階衝擊器之多微孔噴嘴板之製造方法。
美國MSP公司所開發製造之微孔均勻沉積衝擊器(Micro-Orifice Uniform Deposit Impactor,MOUDI)目前已廣泛應用於大氣微粒之採樣上,該微孔均勻沉積衝擊器內部設有多數噴嘴板(nozzle plate)及衝擊板(impactor plate),噴嘴板上設有多數微孔,當氣流通過該等微孔時,氣流中之微粒會因為慣性而被收集於下方之衝擊板上;隨著各階設計參數之不同,各階所能收集之微粒大小也有所差異,以10階MOUDI為例,其各階之截取氣動直徑(cutoff aerodynamic diameter)依序為18、10.0、5.6、3.2、1.8、1.0、0.56、0.32、0.18、0.1、0.056與<0.056μm,其中,第七階及第八階的噴嘴板(nozzle plate)各有900個微孔,孔徑分別為140及90μm,而第九階及第十階則各有2000個微孔,孔徑分別為55及52μm。
Ji等人使用電子顯微鏡對採樣後之8階MOUDI中第七階及第八階之噴嘴板進行觀察,並將研究結果發表於期刊中(Ji,J.H.,Bae,G.N.,Hwang,J.,2006.Observation and evaluation of nozzle clogging in a micro-orifice impactor used for atmospheric aerosol sampling,Particulate Sci.Technol.24:
85-96.)。Ji等人的研究發現在MOUDI使用一段時間後,噴嘴的微孔會有被微粒阻塞之現象,使得各階微粒截取氣動直徑值變得比原設計值小,且各階之壓差也變得較原設計值大。
本案發明人也利用光學顯微鏡對MOUDI第9階噴嘴板之微孔進行觀察,發現微孔呈階梯狀之不平滑形狀(如第十一圖),極有可能是造成微粒累積阻塞於微孔之原因;另外,微孔底端之壁厚D1僅約10μm,其結構相當脆弱,無法利用超音波振盪方式來清洗,清洗時相當不方便。
鑑於上述缺失,本發明之一目的在於提供一種用於多階衝擊器之多微孔噴嘴板之製造方法,其多微孔噴嘴板之微孔孔緣平滑,而可避免微粒於其內部累積而導致阻塞者。
本發明之一目的在於提供一種用於多階衝擊器之多微孔噴嘴板之製造方法,其多微孔噴嘴板之微孔孔壁厚度均勻且結構堅固,而可利用超音波振盪裝置進行清洗者。
為達前揭目的,本發明之用於多階衝擊器之多微孔噴嘴板之製造方法包含有以下步驟:(1)於一基材上形成一種子層;(2)於該種子層上塗佈一第一光阻劑,並利用一UV光經由一第一光罩照射該第一光阻劑,並對該第一光阻劑進行顯影;(3)蝕刻該種子層,並去除該第一光阻劑,使該種子層上形成多數貫穿該種子層之穿孔;(4)於該基材及種子層上塗佈一犧牲層;(5)於該犧牲層上形成一金屬阻罩
層;(6)於該金屬阻罩層上塗佈一第二光阻劑,利用一UV光經由一第二光罩照射該第二光阻劑,並對該第二光阻劑進行顯影;(7)蝕刻該金屬阻罩層,並去除該第二光阻劑,使該金屬阻罩層形成多數位於該犧牲層上之凸塊;(8)蝕刻該犧牲層至該基材及該種子層露出;(9)電鑄一金屬材料至該種子層上且覆蓋該玻璃基材;以及(10)將基材、該種子層以及該犧牲層去除。其中步驟(9)之金屬材料可為鈷及鎳之混合物
為了詳細說明本發明之構造及特點所在,茲舉以下一較佳實施例並配合圖式說明如後,其中:第一圖係本發明一較佳實施例之製造過程示意圖(一);第二圖係本發明一較佳實施例之製造過程示意圖(二);第三圖係本發明一較佳實施例之製造過程示意圖(三);第四圖係本發明一較佳實施例之製造過程示意圖(四);第五圖係本發明一較佳實施例之製造過程示意圖(五);第六圖係本發明一較佳實施例之製造過程示意圖(六);第七圖係本發明一較佳實施例之製造過程示意圖(七);第八圖係本發明一較佳實施例之製造過程示意圖(八);第九圖係本發明一較佳實施例之製造過程示意圖(九);第十圖係本發明一較佳實施例之製造過程示意圖(十)。
請參閱第一圖至第十圖,本發明一較佳實施例所提供之用於多階衝擊器微孔噴嘴板之製造方法,係包含以下步
驟:(1)如第一圖所示,於一玻璃基材20上形成一種子層22(seed Layer),其中,該種子層22之材質可為銅或是鉻(Chromium),並可透過濺鍍(sputtering)、蒸鍍(evaporation)或是化學氣相沉積(Chemical Vapor Deposition,CVD)等方法而形成,該種子層22之厚度D2大約為3μm;(2)如第二圖所示,於該種子層上塗佈一第一光阻劑(photoresist)24,並利用一UV光經由一第一光罩26(mask)照射該第一光阻劑24,並對該第一光阻劑24進行顯影(development),其中,該第一光罩26具有多數圓形之透光區(transparent regions)261而可供該UV光通過;為求圖式簡潔,該第二圖只顯示單一透光區261;(3)如第三圖所示,蝕刻(etching)該種子層22,並去除該第一光阻劑24,使該種子層22上形成多數貫穿該種子層22之穿孔221;(4)如第四圖所示,於該玻璃基材20及種子層22上塗佈一犧牲層28(sacrificial layer),該犧性層28可採用但不限於聚乙醯胺(Polyimide,PI);(5)如第五圖所示,於該犧牲層28上形成一金屬阻罩層30,該金屬阻罩層30之材質可為銅或是鉻,並可利用濺鍍、蒸鍍或是化學氣相沉積等方式而形成;(6)如第六圖所示,於該金屬阻罩層30上塗佈一第二光阻劑32,利用一UV光經由一第二光罩34照射該第二光阻劑32,並對該第二光阻劑32進行顯影,其中,該第
二光罩34上具有多數圓形且不透光之遮蔽區(opaque regions)341,該等遮蔽區341與該種子層22上第一穿孔221之位置對應;(7)如第七圖所示,蝕刻該金屬阻罩層30,並去除該殘餘之第二光阻劑32,使該金屬阻罩層30形成多數位於該犧牲層28上之凸塊301,為求圖式簡潔,該第六圖及第七圖也是只顯示單一遮蔽區341及單一凸塊301;(8)如第八圖所示,蝕刻未被凸塊301遮蔽的該犧牲層28,直到該玻璃基材20及種子層22露出,其餘被凸塊301所遮蔽的犧牲層28則成柱狀;(9)如第九圖所示,電鑄(electroplating)一金屬材料36至該種子層22上且覆蓋該玻璃基材20,直到所需之厚度D3,其中,該金屬材料可採用但不限於鎳(Nickel)及鈷(Cobalt)之混合物,該厚度D3為150μm;以及(10)如第十圖所示,將該基材20、該種子層22以及該犧牲層28去除,該用於多階衝擊器之多微孔噴嘴板10即可成形,該噴嘴板10後續將被裁切及周圍鑽孔,以方便被固定於一多階衝擊器中。
請參閱第十圖,本發明一較佳實施例所提供之用於多階衝擊器之多微孔噴嘴板10,是利用上述之微影方法(lithographic process)、蝕刻方法及電鑄方法而製成,包含有一板體12以及多數微孔14,該等微孔14形成於該板體12上,且貫穿該板體12之頂底兩側;由於該板體12是利用電鑄方法而形成,因此該等微孔14之內表面平滑,且內
徑是由該噴嘴板10之底側朝上逐漸擴大,該噴嘴板10並具有多數環形凸塊16形成於該板體12底側,且環繞該等微孔14。
由於該等微孔14之內表面平滑,有助於微粒之順利通過,因此可有效避免噴嘴板10之阻塞;另外,該等微孔14孔壁厚度較為均勻且結構堅固,可利用超音波振盪裝置來清洗,有助於提高使用上之便利性及實驗品質;另外,依照所設計之截取氣動直徑之不同,該噴嘴板10微孔14之數量及底端直徑可分別被設計為(900個,140μm)、(900個,90μm)、(2000個,55μm)、(2000個,52μm)、(980個,49μm)、(1650個,45μm)或(2000個,55μm),但微孔14之數量建議介於50~10000個之間,直徑建議介於45~410μm之間。
以上所述,僅為本發明之較佳實施例的詳細說明與圖示,凡合於本發明申請專利範圍之精神與其類似變化之實施例,皆包含於本發明的範疇中,任何熟悉該項技藝者在本發明之領域內,可輕易思及之變化或修飾皆可涵蓋在本案之專利範圍。
10‧‧‧用於多階衝擊器之多微孔噴嘴板
12‧‧‧板體
14‧‧‧微孔
16‧‧‧凸塊
20‧‧‧基材
22‧‧‧種子層
221‧‧‧穿孔
24‧‧‧第一光阻劑
26‧‧‧第一光罩
28‧‧‧犧牲層
30‧‧‧金屬阻罩層
301‧‧‧凸塊
32‧‧‧第二光阻劑
34‧‧‧第二光罩
36‧‧‧金屬材料
D1‧‧‧微孔底端之孔壁厚度
D2‧‧‧種子層厚度
D3‧‧‧多微孔噴嘴板厚度
第一圖係本發明一較佳實施例之製造過程示意圖(一);第二圖係本發明一較佳實施例之製造過程示意圖(二);第三圖係本發明一較佳實施例之製造過程示意圖(三);第四圖係本發明一較佳實施例之製造過程示意圖(四);第五圖係本發明一較佳實施例之製造過程示意圖(五);第六圖係本發明一較佳實施例之製造過程示意圖(六);第七圖係本發明一較佳實施例之製造過程示意圖(七);第八圖係本發明一較佳實施例之製造過程示意圖(八);第九圖係本發明一較佳實施例之製造過程示意圖(九);第十圖係本發明一較佳實施例之製造過程示意圖(十);第十一圖係習知噴嘴板之剖視示意圖。
10‧‧‧用於多階衝擊器之多微孔噴嘴板
12‧‧‧板體
14‧‧‧微孔
16‧‧‧凸塊
D3‧‧‧多微孔噴嘴板厚度
Claims (2)
- 一種用於多階衝擊器之多微孔噴嘴板之製造方法,該多微孔噴嘴板包含一板體及多數微孔,該些微孔係形成於該板體且貫穿該板體之頂底兩側,該等微孔之內表面平滑,且其內徑係由噴嘴板之底側朝上擴大;所述製造方法係包含以下步驟:(1)於一基材上形成一種子層;(2)於該種子層上塗佈一第一光阻劑,並利用一UV光經由一第一光罩照射該第一光阻劑,並對該第一光阻劑進行顯影;(3)蝕刻該種子層,並去除該第一光阻劑,使該種子層上形成多數貫穿該種子層之穿孔;(4)於該基材及種子層上塗佈一犧牲層;(5)於該犧牲層上形成一金屬阻罩層;(6)於該金屬阻罩層上塗佈一第二光阻劑,利用一UV光經由一第二光罩照射該第二光阻劑,並對該第二光阻劑進行顯影;(7)蝕刻該金屬阻罩層,並去除該第二光阻劑,使該金屬阻罩層形成多數位於該犧牲層上之凸塊;(8)蝕刻未被凸塊遮蔽的犧牲層至該基材及該種子層露出,其餘被凸塊遮蔽的犧牲層成柱狀;(9)電鑄一金屬材料至該種子層上且覆蓋該玻璃基材;以及(10)將基材、該種子層以及該犧牲層去除。
- 如申請專利範圍第1項所述之多微孔噴嘴板之製造方法,其中步驟(9)之金屬材料為鈷及鎳之混合物。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW099105869A TWI417532B (zh) | 2010-03-01 | 2010-03-01 | 用於多階衝擊器之多微孔噴嘴板之製造方法 |
JP2010157866A JP5616706B2 (ja) | 2010-03-01 | 2010-07-12 | ノズルプレートの製造方法 |
US12/805,279 US20110209528A1 (en) | 2010-03-01 | 2010-07-22 | Nozzle plate containing multiple micro-orifices for cascade impactor and method for manufacturing the same |
US14/043,239 US8685262B2 (en) | 2010-03-01 | 2013-10-01 | Method for manufacturing a nozzle plate containing multiple micro-orifices for cascade impactor |
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TW099105869A TWI417532B (zh) | 2010-03-01 | 2010-03-01 | 用於多階衝擊器之多微孔噴嘴板之製造方法 |
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TW201131157A TW201131157A (en) | 2011-09-16 |
TWI417532B true TWI417532B (zh) | 2013-12-01 |
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TW099105869A TWI417532B (zh) | 2010-03-01 | 2010-03-01 | 用於多階衝擊器之多微孔噴嘴板之製造方法 |
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US (2) | US20110209528A1 (zh) |
JP (1) | JP5616706B2 (zh) |
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WO2015118327A1 (en) * | 2014-02-06 | 2015-08-13 | British Telecommunications Public Limited Company | Method and apparatus for determining a network search parameter in a mobile communications network |
GB201410497D0 (en) * | 2014-06-12 | 2014-07-30 | Univ York | Communication network and method |
KR101494702B1 (ko) | 2014-10-22 | 2015-02-26 | (주)메가메디칼 | 네블라이저용 메쉬 제조방법 |
GB2555771B (en) | 2015-12-23 | 2021-03-03 | Pismo Labs Technology Ltd | Methods and systems for selecting sim card |
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US20010024219A1 (en) * | 2000-03-21 | 2001-09-27 | Nec Corporation | Nozzle plate structure for ink-jet printing head and method of manufacturing nozzle plate |
TW589253B (en) * | 2002-02-01 | 2004-06-01 | Nanodynamics Inc | Method for producing nozzle plate of ink-jet print head by photolithography |
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JPH072586Y2 (ja) * | 1988-11-25 | 1995-01-25 | 日東紡績株式会社 | ガラス繊維紡糸用冷却フィン装置 |
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GB9521775D0 (en) * | 1995-10-24 | 1996-01-03 | Pa Consulting Services | Microwell plates |
US6101886A (en) * | 1997-11-26 | 2000-08-15 | Pacific Sierra Research | Multi-stage sampler concentrator |
US6431014B1 (en) * | 1999-07-23 | 2002-08-13 | Msp Corporation | High accuracy aerosol impactor and monitor |
EP1109038A1 (en) * | 1999-12-17 | 2001-06-20 | Corning Incorporated | Method for manufacturing an optical integrated circuit |
US20030013046A1 (en) * | 2001-06-29 | 2003-01-16 | The Penn State Research Foundation, University Park, Pennsylvania | Use of sacrificial layers in the manufacturing of chemical reactor structures and the application of such structures |
JP2003220364A (ja) * | 2002-01-30 | 2003-08-05 | Asahi Kasei Corp | 精密ふるい板およびそれを用いた分級装置 |
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2010
- 2010-03-01 TW TW099105869A patent/TWI417532B/zh active
- 2010-07-12 JP JP2010157866A patent/JP5616706B2/ja not_active Expired - Fee Related
- 2010-07-22 US US12/805,279 patent/US20110209528A1/en not_active Abandoned
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2013
- 2013-10-01 US US14/043,239 patent/US8685262B2/en active Active
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US20010024219A1 (en) * | 2000-03-21 | 2001-09-27 | Nec Corporation | Nozzle plate structure for ink-jet printing head and method of manufacturing nozzle plate |
TW589253B (en) * | 2002-02-01 | 2004-06-01 | Nanodynamics Inc | Method for producing nozzle plate of ink-jet print head by photolithography |
Also Published As
Publication number | Publication date |
---|---|
US20110209528A1 (en) | 2011-09-01 |
JP2011178154A (ja) | 2011-09-15 |
TW201131157A (en) | 2011-09-16 |
US8685262B2 (en) | 2014-04-01 |
JP5616706B2 (ja) | 2014-10-29 |
US20140027406A1 (en) | 2014-01-30 |
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