TWI417353B - ３ａ族油墨及其製造及使用方法 - Google Patents
３ａ族油墨及其製造及使用方法 Download PDFInfo
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- TWI417353B TWI417353B TW099139872A TW99139872A TWI417353B TW I417353 B TWI417353 B TW I417353B TW 099139872 A TW099139872 A TW 099139872A TW 99139872 A TW99139872 A TW 99139872A TW I417353 B TWI417353 B TW I417353B
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
- C23C18/10—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1678—Heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/622,754 US8894760B2 (en) | 2009-11-20 | 2009-11-20 | Group 3a ink and methods of making and using same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201124481A TW201124481A (en) | 2011-07-16 |
| TWI417353B true TWI417353B (zh) | 2013-12-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099139872A TWI417353B (zh) | 2009-11-20 | 2010-11-19 | ３ａ族油墨及其製造及使用方法 |
Country Status (6)
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| US (1) | US8894760B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2325352A3 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5733957B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101766318B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN102070952B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI417353B (cg-RX-API-DMAC7.html) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011146115A1 (en) | 2010-05-21 | 2011-11-24 | Heliovolt Corporation | Liquid precursor for deposition of copper selenide and method of preparing the same |
| WO2012023973A2 (en) | 2010-08-16 | 2012-02-23 | Heliovolt Corporation | Liquid precursor for deposition of indium selenide and method of preparing the same |
| US20120067407A1 (en) | 2010-09-15 | 2012-03-22 | Precursor Energetics, Inc. | Deposition processes and photovoltaic devices with polymeric precursors |
| US9105797B2 (en) | 2012-05-31 | 2015-08-11 | Alliance For Sustainable Energy, Llc | Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se |
| US8999746B2 (en) | 2013-08-08 | 2015-04-07 | Tokyo Ohka Kogyo Co., Ltd. | Method of forming metal chalcogenide dispersion, metal chalcogenide dispersion, method of producing light absorbing layer of solar cell, method of producing solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030087516A1 (en) * | 2001-11-02 | 2003-05-08 | Rigaku Corporation | Method and apparatus for producing metal oxide |
| US20060083694A1 (en) * | 2004-08-07 | 2006-04-20 | Cabot Corporation | Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same |
| US20090260670A1 (en) * | 2008-04-18 | 2009-10-22 | Xiao-Chang Charles Li | Precursor ink for producing IB-IIIA-VIA semiconductors |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9315771D0 (en) * | 1993-07-30 | 1993-09-15 | Epichem Ltd | Method of depositing thin metal films |
| EP0989205A4 (en) * | 1997-04-30 | 2003-05-28 | Takamatsu Res Lab | METAL PASTE AND PROCESS FOR PRODUCING A METAL LAYER |
| US6268014B1 (en) * | 1997-10-02 | 2001-07-31 | Chris Eberspacher | Method for forming solar cell materials from particulars |
| US6090926A (en) * | 1998-06-05 | 2000-07-18 | Rhodia Rare Earths Inc. | Powdery, solid rare earth carboxylates with improved solubility in aliphatic solvents which are highly active catalysts in Ziegler-Natta systems |
| US6127202A (en) * | 1998-07-02 | 2000-10-03 | International Solar Electronic Technology, Inc. | Oxide-based method of making compound semiconductor films and making related electronic devices |
| US7524528B2 (en) * | 2001-10-05 | 2009-04-28 | Cabot Corporation | Precursor compositions and methods for the deposition of passive electrical components on a substrate |
| US7629017B2 (en) * | 2001-10-05 | 2009-12-08 | Cabot Corporation | Methods for the deposition of conductive electronic features |
| JP4090298B2 (ja) | 2002-07-11 | 2008-05-28 | 富士フイルム株式会社 | 微粒化分散液、インクジェット記録用シート色材受容層塗布液および微粒化分散液の製造方法 |
| PL1853671T3 (pl) * | 2005-03-04 | 2014-01-31 | Inktec Co Ltd | Tusze przewodzące i sposób ich wytwarzania |
| US7968008B2 (en) * | 2006-08-03 | 2011-06-28 | Fry's Metals, Inc. | Particles and inks and films using them |
| CA2663688C (en) * | 2006-09-22 | 2015-11-17 | Fry's Metals, Inc. | Solvent systems for metals and inks |
| WO2008095146A2 (en) * | 2007-01-31 | 2008-08-07 | Van Duren Jeroen K J | Solar cell absorber layer formed from metal ion precursors |
| JP2009229593A (ja) * | 2008-03-19 | 2009-10-08 | Mitsuboshi Belting Ltd | フォトマスク補修用インキ組成物及びフォトマスク補修方法 |
| JP2009227736A (ja) * | 2008-03-19 | 2009-10-08 | Mitsuboshi Belting Ltd | インクジェット印刷用インキ組成物 |
| DE102009015470A1 (de) * | 2008-12-12 | 2010-06-17 | Byk-Chemie Gmbh | Verfahren zur Herstellung von Metallnanopartikeln und auf diese Weise erhaltene Metallnanopartikel und ihre Verwendung |
-
2009
- 2009-11-20 US US12/622,754 patent/US8894760B2/en active Active
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2010
- 2010-11-17 EP EP10191581.7A patent/EP2325352A3/en not_active Withdrawn
- 2010-11-19 JP JP2010258566A patent/JP5733957B2/ja active Active
- 2010-11-19 KR KR1020100115430A patent/KR101766318B1/ko active Active
- 2010-11-19 TW TW099139872A patent/TWI417353B/zh active
- 2010-11-22 CN CN201010573616XA patent/CN102070952B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030087516A1 (en) * | 2001-11-02 | 2003-05-08 | Rigaku Corporation | Method and apparatus for producing metal oxide |
| US20060083694A1 (en) * | 2004-08-07 | 2006-04-20 | Cabot Corporation | Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same |
| US20090260670A1 (en) * | 2008-04-18 | 2009-10-22 | Xiao-Chang Charles Li | Precursor ink for producing IB-IIIA-VIA semiconductors |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011122150A (ja) | 2011-06-23 |
| CN102070952A (zh) | 2011-05-25 |
| KR20110056245A (ko) | 2011-05-26 |
| EP2325352A3 (en) | 2015-12-30 |
| KR101766318B1 (ko) | 2017-08-08 |
| US20110120343A1 (en) | 2011-05-26 |
| CN102070952B (zh) | 2013-09-18 |
| JP5733957B2 (ja) | 2015-06-10 |
| US8894760B2 (en) | 2014-11-25 |
| TW201124481A (en) | 2011-07-16 |
| EP2325352A2 (en) | 2011-05-25 |
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