TWI415302B - 光電半導體本體 - Google Patents

光電半導體本體 Download PDF

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Publication number
TWI415302B
TWI415302B TW098133792A TW98133792A TWI415302B TW I415302 B TWI415302 B TW I415302B TW 098133792 A TW098133792 A TW 098133792A TW 98133792 A TW98133792 A TW 98133792A TW I415302 B TWI415302 B TW I415302B
Authority
TW
Taiwan
Prior art keywords
electrical contact
semiconductor body
front side
contact layer
layer
Prior art date
Application number
TW098133792A
Other languages
English (en)
Chinese (zh)
Other versions
TW201025680A (en
Inventor
卡爾 依哥
馬提亞 沙貝絲爾
Original Assignee
歐司朗光電半導體公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 歐司朗光電半導體公司 filed Critical 歐司朗光電半導體公司
Publication of TW201025680A publication Critical patent/TW201025680A/zh
Application granted granted Critical
Publication of TWI415302B publication Critical patent/TWI415302B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW098133792A 2008-10-09 2009-10-06 光電半導體本體 TWI415302B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008051048A DE102008051048A1 (de) 2008-10-09 2008-10-09 Optoelektronischer Halbleiterkörper

Publications (2)

Publication Number Publication Date
TW201025680A TW201025680A (en) 2010-07-01
TWI415302B true TWI415302B (zh) 2013-11-11

Family

ID=41531777

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098133792A TWI415302B (zh) 2008-10-09 2009-10-06 光電半導體本體

Country Status (8)

Country Link
US (1) US9620680B2 (enExample)
EP (1) EP2340568B1 (enExample)
JP (2) JP5635517B2 (enExample)
KR (1) KR101634410B1 (enExample)
CN (1) CN102177595B (enExample)
DE (1) DE102008051048A1 (enExample)
TW (1) TWI415302B (enExample)
WO (1) WO2010040337A1 (enExample)

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DE102013112885A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Verfahren zur optischen Charakterisierung eines optoelektronischen Halbleitermaterials und Vorrichtung zur Durchführung des Verfahrens
DE102014102029A1 (de) * 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
DE102014107563A1 (de) * 2014-05-28 2015-12-03 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit Kontaktstruktur
DE102014112562A1 (de) 2014-09-01 2016-03-03 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102014114194B4 (de) * 2014-09-30 2023-10-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102018119734A1 (de) * 2018-08-14 2020-02-20 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit einem trägerelement, welches ein elektrisch leitendes material umfasst
DE102020124258A1 (de) 2020-09-17 2022-03-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement und verfahren zur herstellung zumindest eines optoelektronischen halbleiterbauelements

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TW200703707A (en) * 2005-07-12 2007-01-16 Univ Nat Chunghsing Total-reflection light emitting diode and production method thereof

Also Published As

Publication number Publication date
US20120043572A1 (en) 2012-02-23
US9620680B2 (en) 2017-04-11
JP2012505531A (ja) 2012-03-01
CN102177595B (zh) 2014-04-30
DE102008051048A1 (de) 2010-04-15
KR20110069149A (ko) 2011-06-22
WO2010040337A1 (de) 2010-04-15
TW201025680A (en) 2010-07-01
JP5635517B2 (ja) 2014-12-03
EP2340568B1 (de) 2017-03-01
KR101634410B1 (ko) 2016-06-28
EP2340568A1 (de) 2011-07-06
JP5876557B2 (ja) 2016-03-02
JP2015039024A (ja) 2015-02-26
CN102177595A (zh) 2011-09-07

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