JP2012505531A - オプトエレクトロニクス半導体ボディ - Google Patents
オプトエレクトロニクス半導体ボディ Download PDFInfo
- Publication number
- JP2012505531A JP2012505531A JP2011530362A JP2011530362A JP2012505531A JP 2012505531 A JP2012505531 A JP 2012505531A JP 2011530362 A JP2011530362 A JP 2011530362A JP 2011530362 A JP2011530362 A JP 2011530362A JP 2012505531 A JP2012505531 A JP 2012505531A
- Authority
- JP
- Japan
- Prior art keywords
- electrical contact
- semiconductor body
- contact layer
- opening
- optoelectronic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 171
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 36
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 12
- 230000005855 radiation Effects 0.000 claims description 19
- 238000000605 extraction Methods 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 13
- 238000011161 development Methods 0.000 description 11
- 230000018109 developmental process Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
− 薄膜発光ダイオードチップは、好ましくは後側に、キャリア要素を有し、当該キャリア要素は半導体積層体をエピタキシャル成長させた成長基板ではなく、後の工程で半導体積層体に載置された別個のキャリア要素である。
− 半導体積層体の厚さは、10μm以下の範囲内、特に5μm以下の範囲内である。
− 半導体積層体に成長基板が存在しない。本明細書において「成長基板が存在しない」とは、半導体積層体の成長に使用されたであろう成長基板が、半導体積層体から除去されていること、または少なくとも大幅に薄くなっていることを意味する。具体的には、成長基板は、単独でもエピタキシャル積層体と一緒でも自身を支持できない程度まで薄くされている。したがって、大幅に薄くなった残りの成長基板は、成長基板として機能するには特に適していない。
− 半導体積層体は、混合構造(intermixing structure)を有する少なくとも一面を有する少なくとも1つの半導体層を含み、この構造は、理想的な場合、半導体積層体内に光をほぼエルゴード分布させる。つまりこの光は、非常にエルゴード的な確率論的散乱挙動を示す。
Claims (15)
- 電磁放射の発生に適している活性層(100)を有する半導体積層体(1)と、第1の電気接続層(4)と、を備えているオプトエレクトロニクス半導体ボディであって、
− 前記半導体ボディが前側(2)から電磁放射を出射するようにされており、
− 前記半導体積層体(1)は、前記前側(2)から当該前側(2)と反対側の後側(3)の方向に、前記半導体積層体(1)を完全に貫通する開口(110)を有し、
− 前記第1の電気接触層(4)は前記半導体ボディの前記後側(3)に設けられ、
− 前記第1の電気接触層(4)の部分領域(40)は、前記後側(3)から前記開口(110)を通って前記前側(2)まで延在して、前記半導体積層体(1)の前側主面(10)の第1の副領域(11)を覆い、
− 前記前側主面(10)の第2の副領域(12)は、前記第1の電気接触層(4)で覆われていない、
オプトエレクトロニクス半導体ボディ。 - 前記前側主面(10)の平面図において、前記第1の副領域(11)は前記少なくとも1つの開口(110)を囲んでいる、請求項1に記載のオプトエレクトロニクス半導体ボディ。
- 前記部分領域(40)は前記開口(110)を埋めている、請求項1または2に記載のオプトエレクトロニクス半導体ボディ。
- 前記開口(110)と横方向に重なり、かつ、前記前側(2)から前記後側(3)の方向に前記半導体積層体(1)内に延在する凹部(6)を有する、請求項1または2に記載のオプトエレクトロニクス半導体ボディ。
- 前記第1の電気接触層(4)は、前記凹部(6)を横方向および/または前記後側(3)の方向に画定する、請求項4に記載のオプトエレクトロニクス半導体ボディ。
- 前記第1の電気接触層(4)は前記凹部(6)を有する、請求項5に記載のオプトエレクトロニクス半導体ボディ。
- 前記第1の電気接触層(4)は、少なくとも一部分において光を透過するようにされている、請求項1〜6のいずれか一項に記載のオプトエレクトロニクス半導体ボディ。
- 前記第1の電気接触層(4)の前記部分領域(40,40A)は透明導電性酸化物を含むか、または、透明導電性酸化物からなる、請求項7に記載のオプトエレクトロニクス半導体ボディ。
- 前記前側主面(10)は放射取り出し構造(120)を有し、前記第1の副領域(11)には前記放射取り出し構造(120)が存在しない、請求項1〜8のいずれか一項に記載のオプトエレクトロニクス半導体ボディ。
- 前記後側(3)に設けられ、かつ、分離層(7)によって前記第1の電気接触層(4)から電気的に絶縁されている第2の電気接触層(5)を有する、請求項1〜9のいずれか一項に記載のオプトエレクトロニクス半導体ボディ。
- 前記第1の電気接触層(4)、前記第2の電気接触層(5)、前記分離層(7)は、前記半導体ボディの前記後側(3)において横方向に重なる、請求項10に記載のオプトエレクトロニクス半導体ボディ。
- 複数の開口部(80)を有する半導体性または絶縁性のミラー層(8)が、前記半導体積層体(1)と前記第2の電気接触層(5)との間の一領域に設けられ、
前記第2の電気接触層(5)は前記開口部(80)内を通って前記半導体積層体(1)まで延在する、請求項10または11に記載のオプトエレクトロニクス半導体ボディ。 - 前記半導体積層体(1)の厚さ(D)は3μm以下である、請求項1〜12のいずれか一項に記載のオプトエレクトロニクス半導体ボディ。
- 前側接触面の表面積を前記前側主面(10)の全表面積で割った商は0.05以上0.15以下であり、
前記前側接触面の表面積は、前記全表面積と前記第2の副領域(12)の表面積との差に相当する、請求項1〜13のいずれか一項に記載のオプトエレクトロニクス半導体ボディ。 - 前記開口(110)は、前記前側(2)から前記後側(3)の方向に、または、前記後側(3)から前記前側(2)の方向に先細りになっている、請求項1〜14のいずれか一項に記載のオプトエレクトロニクス半導体ボディ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008051048A DE102008051048A1 (de) | 2008-10-09 | 2008-10-09 | Optoelektronischer Halbleiterkörper |
DE102008051048.3 | 2008-10-09 | ||
PCT/DE2009/001379 WO2010040337A1 (de) | 2008-10-09 | 2009-09-30 | Optoelektronischer halbleiterkörper |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014212013A Division JP5876557B2 (ja) | 2008-10-09 | 2014-10-16 | オプトエレクトロニクス半導体ボディ |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012505531A true JP2012505531A (ja) | 2012-03-01 |
JP2012505531A5 JP2012505531A5 (ja) | 2012-08-30 |
JP5635517B2 JP5635517B2 (ja) | 2014-12-03 |
Family
ID=41531777
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011530362A Active JP5635517B2 (ja) | 2008-10-09 | 2009-09-30 | オプトエレクトロニクス半導体ボディ |
JP2014212013A Active JP5876557B2 (ja) | 2008-10-09 | 2014-10-16 | オプトエレクトロニクス半導体ボディ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014212013A Active JP5876557B2 (ja) | 2008-10-09 | 2014-10-16 | オプトエレクトロニクス半導体ボディ |
Country Status (8)
Country | Link |
---|---|
US (1) | US9620680B2 (ja) |
EP (1) | EP2340568B1 (ja) |
JP (2) | JP5635517B2 (ja) |
KR (1) | KR101634410B1 (ja) |
CN (1) | CN102177595B (ja) |
DE (1) | DE102008051048A1 (ja) |
TW (1) | TWI415302B (ja) |
WO (1) | WO2010040337A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013537369A (ja) * | 2010-09-17 | 2013-09-30 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体チップ |
JP2017512380A (ja) * | 2014-02-18 | 2017-05-18 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 半導体構成素子を製造する方法、及び、半導体構成素子 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010002204A1 (de) | 2010-02-22 | 2011-08-25 | OSRAM Opto Semiconductors GmbH, 93055 | Halbleiterdiode und Verfahren zum Herstellen einer Halbleiterdiode |
TWI470832B (zh) * | 2010-03-08 | 2015-01-21 | Lg Innotek Co Ltd | 發光裝置 |
DE102010033137A1 (de) | 2010-08-03 | 2012-02-09 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
KR101730152B1 (ko) * | 2010-10-06 | 2017-04-25 | 엘지이노텍 주식회사 | 발광 소자 |
DE102013112885A1 (de) * | 2013-11-21 | 2015-05-21 | Osram Opto Semiconductors Gmbh | Verfahren zur optischen Charakterisierung eines optoelektronischen Halbleitermaterials und Vorrichtung zur Durchführung des Verfahrens |
DE102014107563A1 (de) * | 2014-05-28 | 2015-12-03 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement mit Kontaktstruktur |
DE102014112562A1 (de) * | 2014-09-01 | 2016-03-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
DE102014114194B4 (de) * | 2014-09-30 | 2023-10-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
DE102018119734A1 (de) * | 2018-08-14 | 2020-02-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement mit einem trägerelement, welches ein elektrisch leitendes material umfasst |
DE102020124258A1 (de) | 2020-09-17 | 2022-03-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterbauelement und verfahren zur herstellung zumindest eines optoelektronischen halbleiterbauelements |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007523483A (ja) * | 2004-02-20 | 2007-08-16 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光電素子、多数の光電素子を有する装置および光電素子を製造する方法 |
JP2007287849A (ja) * | 2006-04-14 | 2007-11-01 | Nichia Chem Ind Ltd | 半導体発光素子 |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3239657B2 (ja) * | 1994-12-28 | 2001-12-17 | 富士電機株式会社 | 薄膜太陽電池およびその製造方法 |
US5917202A (en) * | 1995-12-21 | 1999-06-29 | Hewlett-Packard Company | Highly reflective contacts for light emitting semiconductor devices |
DE59814431D1 (de) | 1997-09-29 | 2010-03-25 | Osram Opto Semiconductors Gmbh | Halbleiterlichtquelle und Verfahren zu ihrer Herstellung |
JP3629939B2 (ja) * | 1998-03-18 | 2005-03-16 | セイコーエプソン株式会社 | トランジスタ回路、表示パネル及び電子機器 |
JP3411989B2 (ja) * | 2000-03-28 | 2003-06-03 | 独立行政法人産業技術総合研究所 | ダイヤモンド半導体発光素子 |
US20020017652A1 (en) | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
JP2004055646A (ja) * | 2002-07-17 | 2004-02-19 | Sumitomo Electric Ind Ltd | 発光ダイオード素子のp側電極構造 |
CN100595937C (zh) * | 2002-08-01 | 2010-03-24 | 日亚化学工业株式会社 | 半导体发光元件及发光装置 |
US7714345B2 (en) | 2003-04-30 | 2010-05-11 | Cree, Inc. | Light-emitting devices having coplanar electrical contacts adjacent to a substrate surface opposite an active region and methods of forming the same |
US7119372B2 (en) * | 2003-10-24 | 2006-10-10 | Gelcore, Llc | Flip-chip light emitting diode |
TWI234298B (en) * | 2003-11-18 | 2005-06-11 | Itswell Co Ltd | Semiconductor light emitting diode and method for manufacturing the same |
US7569863B2 (en) * | 2004-02-19 | 2009-08-04 | Panasonic Corporation | Semiconductor light emitting device |
JP4805831B2 (ja) * | 2004-03-18 | 2011-11-02 | パナソニック株式会社 | 半導体発光装置、照明モジュール、照明装置、表面実装部品、および表示装置 |
US20050205883A1 (en) | 2004-03-19 | 2005-09-22 | Wierer Jonathan J Jr | Photonic crystal light emitting device |
JP4027914B2 (ja) * | 2004-05-21 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 照明装置及びそれを用いた機器 |
US7733441B2 (en) * | 2004-06-03 | 2010-06-08 | Semiconductor Energy Labortory Co., Ltd. | Organic electroluminescent lighting system provided with an insulating layer containing fluorescent material |
KR100599012B1 (ko) * | 2005-06-29 | 2006-07-12 | 서울옵토디바이스주식회사 | 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법 |
TWI282183B (en) | 2005-07-12 | 2007-06-01 | Univ Nat Chunghsing | Total-reflection light emitting diode and production method thereof |
JP2007273975A (ja) | 2006-03-10 | 2007-10-18 | Matsushita Electric Works Ltd | 発光素子 |
KR101030659B1 (ko) | 2006-03-10 | 2011-04-20 | 파나소닉 전공 주식회사 | 발광 소자 |
US7622746B1 (en) * | 2006-03-17 | 2009-11-24 | Bridgelux, Inc. | Highly reflective mounting arrangement for LEDs |
TWI299917B (en) * | 2006-03-17 | 2008-08-11 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
JP2007287249A (ja) * | 2006-04-18 | 2007-11-01 | Victor Co Of Japan Ltd | コンテンツコピー実績管理システム |
KR100755591B1 (ko) * | 2006-06-22 | 2007-09-06 | 고려대학교 산학협력단 | 질화물계 발광소자의 제조방법 |
KR100787461B1 (ko) * | 2006-11-10 | 2007-12-26 | 삼성에스디아이 주식회사 | 다층 구조의 애노드를 채용한 유기 발광 디스플레이 장치 |
US20080121903A1 (en) * | 2006-11-24 | 2008-05-29 | Sony Corporation | Method for manufacturing light-emitting diode, light-emitting diode, lightsource cell unit, light-emitting diode backlight, light-emitting diode illuminating device, light-emitting diode display, and electronic apparatus |
JP4901453B2 (ja) * | 2006-12-20 | 2012-03-21 | 東芝ディスクリートテクノロジー株式会社 | 半導体発光素子 |
KR100818466B1 (ko) * | 2007-02-13 | 2008-04-02 | 삼성전기주식회사 | 반도체 발광소자 |
GB2447091B8 (en) * | 2007-03-02 | 2010-01-13 | Photonstar Led Ltd | Vertical light emitting diodes |
TWI366291B (en) | 2007-03-30 | 2012-06-11 | Epistar Corp | Semiconductor light-emitting device having stacked transparent electrodes |
US20100071936A1 (en) * | 2007-04-05 | 2010-03-25 | Dsem Holdings Sdn. Bhd. | Thermally-Efficient Metal Core Printed Circuit Board With Selective Electrical And Thermal Connectivity |
KR100830318B1 (ko) * | 2007-04-12 | 2008-05-16 | 삼성에스디아이 주식회사 | 발광표시장치 및 그의 제조방법 |
DE102007022947B4 (de) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
US7683380B2 (en) * | 2007-06-25 | 2010-03-23 | Dicon Fiberoptics, Inc. | High light efficiency solid-state light emitting structure and methods to manufacturing the same |
KR100838197B1 (ko) * | 2007-08-10 | 2008-06-16 | 서울옵토디바이스주식회사 | 개선된 전류분산 성능을 갖는 발광 다이오드 |
US8026527B2 (en) * | 2007-12-06 | 2011-09-27 | Bridgelux, Inc. | LED structure |
KR101428053B1 (ko) * | 2007-12-13 | 2014-08-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
US7919780B2 (en) * | 2008-08-05 | 2011-04-05 | Dicon Fiberoptics, Inc. | System for high efficiency solid-state light emissions and method of manufacture |
JP5279403B2 (ja) * | 2008-08-18 | 2013-09-04 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
US8143636B2 (en) * | 2008-11-18 | 2012-03-27 | Epistar Corporation | Light-emitting device |
TWI464900B (zh) * | 2008-11-26 | 2014-12-11 | Epistar Corp | 光電半導體裝置 |
DE102009006177A1 (de) * | 2008-11-28 | 2010-06-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
US8692280B2 (en) * | 2009-11-25 | 2014-04-08 | Epistar Corporation | Optoelectronic semiconductor device |
US9373765B2 (en) * | 2011-05-25 | 2016-06-21 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
US8901556B2 (en) * | 2012-04-06 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, method for manufacturing semiconductor device, and semiconductor device |
-
2008
- 2008-10-09 DE DE102008051048A patent/DE102008051048A1/de not_active Withdrawn
-
2009
- 2009-09-30 US US13/123,713 patent/US9620680B2/en active Active
- 2009-09-30 KR KR1020117010502A patent/KR101634410B1/ko active IP Right Grant
- 2009-09-30 EP EP09741206.8A patent/EP2340568B1/de active Active
- 2009-09-30 JP JP2011530362A patent/JP5635517B2/ja active Active
- 2009-09-30 CN CN200980140108.8A patent/CN102177595B/zh active Active
- 2009-09-30 WO PCT/DE2009/001379 patent/WO2010040337A1/de active Application Filing
- 2009-10-06 TW TW098133792A patent/TWI415302B/zh active
-
2014
- 2014-10-16 JP JP2014212013A patent/JP5876557B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007523483A (ja) * | 2004-02-20 | 2007-08-16 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光電素子、多数の光電素子を有する装置および光電素子を製造する方法 |
JP2007287849A (ja) * | 2006-04-14 | 2007-11-01 | Nichia Chem Ind Ltd | 半導体発光素子 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013537369A (ja) * | 2010-09-17 | 2013-09-30 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体チップ |
US8866175B2 (en) | 2010-09-17 | 2014-10-21 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
JP2017512380A (ja) * | 2014-02-18 | 2017-05-18 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 半導体構成素子を製造する方法、及び、半導体構成素子 |
US10074766B2 (en) | 2014-02-18 | 2018-09-11 | Osram Opto Semiconductors Gmbh | Method for producing semiconductor components and semiconductor component |
Also Published As
Publication number | Publication date |
---|---|
KR101634410B1 (ko) | 2016-06-28 |
JP5876557B2 (ja) | 2016-03-02 |
EP2340568A1 (de) | 2011-07-06 |
TWI415302B (zh) | 2013-11-11 |
JP2015039024A (ja) | 2015-02-26 |
US9620680B2 (en) | 2017-04-11 |
JP5635517B2 (ja) | 2014-12-03 |
TW201025680A (en) | 2010-07-01 |
US20120043572A1 (en) | 2012-02-23 |
CN102177595A (zh) | 2011-09-07 |
EP2340568B1 (de) | 2017-03-01 |
DE102008051048A1 (de) | 2010-04-15 |
CN102177595B (zh) | 2014-04-30 |
WO2010040337A1 (de) | 2010-04-15 |
KR20110069149A (ko) | 2011-06-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5876557B2 (ja) | オプトエレクトロニクス半導体ボディ | |
JP5801359B2 (ja) | オプトエレクトロニクス半導体ボディ | |
JP6124973B2 (ja) | 電流拡散層を有する発光ダイオードチップ | |
TWI550910B (zh) | Semiconductor light emitting device | |
US8003974B2 (en) | LED semiconductor element having increased luminance | |
JP5722844B2 (ja) | 発光デバイス及びその作製方法 | |
US8067783B2 (en) | Radiation-emitting chip comprising at least one semiconductor body | |
KR20100091207A (ko) | 개선된 led 구조 | |
JP5849388B2 (ja) | 半導体発光装置 | |
KR101624750B1 (ko) | 거울층을 포함한 박막 led 및 그 제조 방법 | |
TWI545799B (zh) | Semiconductor light emitting device | |
US8115219B2 (en) | LED semiconductor body and use of an LED semiconductor body | |
TW201517321A (zh) | 半導體發光裝置 | |
KR20110090977A (ko) | 발광다이오드칩 | |
TW201637241A (zh) | 半導體發光元件、發光裝置及半導體發光元件之製造方法 | |
JP2009238931A (ja) | 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法 | |
KR102133904B1 (ko) | 발광 다이오드 유전체 거울 | |
TW201537774A (zh) | 半導體發光裝置及其製造方法 | |
US20240204141A1 (en) | Light emitting diode and light emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120709 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120709 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130820 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130821 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131031 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140218 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140304 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140602 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140609 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140828 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140916 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141016 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5635517 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |