CN102177595B - 光电子半导体本体 - Google Patents

光电子半导体本体 Download PDF

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Publication number
CN102177595B
CN102177595B CN200980140108.8A CN200980140108A CN102177595B CN 102177595 B CN102177595 B CN 102177595B CN 200980140108 A CN200980140108 A CN 200980140108A CN 102177595 B CN102177595 B CN 102177595B
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electrical connection
semiconductor body
layer
connection layer
layer sequence
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English (en)
Chinese (zh)
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CN102177595A (zh
Inventor
卡尔·恩格尔
马蒂亚斯·扎巴蒂尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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CN200980140108.8A 2008-10-09 2009-09-30 光电子半导体本体 Active CN102177595B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008051048.3 2008-10-09
DE102008051048A DE102008051048A1 (de) 2008-10-09 2008-10-09 Optoelektronischer Halbleiterkörper
PCT/DE2009/001379 WO2010040337A1 (de) 2008-10-09 2009-09-30 Optoelektronischer halbleiterkörper

Publications (2)

Publication Number Publication Date
CN102177595A CN102177595A (zh) 2011-09-07
CN102177595B true CN102177595B (zh) 2014-04-30

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CN200980140108.8A Active CN102177595B (zh) 2008-10-09 2009-09-30 光电子半导体本体

Country Status (8)

Country Link
US (1) US9620680B2 (enExample)
EP (1) EP2340568B1 (enExample)
JP (2) JP5635517B2 (enExample)
KR (1) KR101634410B1 (enExample)
CN (1) CN102177595B (enExample)
DE (1) DE102008051048A1 (enExample)
TW (1) TWI415302B (enExample)
WO (1) WO2010040337A1 (enExample)

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DE102010002204A1 (de) 2010-02-22 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Halbleiterdiode und Verfahren zum Herstellen einer Halbleiterdiode
TWI470832B (zh) 2010-03-08 2015-01-21 Lg Innotek Co Ltd 發光裝置
DE102010033137A1 (de) 2010-08-03 2012-02-09 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102010045784B4 (de) * 2010-09-17 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
KR101730152B1 (ko) * 2010-10-06 2017-04-25 엘지이노텍 주식회사 발광 소자
DE102013112885A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Verfahren zur optischen Charakterisierung eines optoelektronischen Halbleitermaterials und Vorrichtung zur Durchführung des Verfahrens
DE102014102029A1 (de) * 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
DE102014107563A1 (de) * 2014-05-28 2015-12-03 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit Kontaktstruktur
DE102014112562A1 (de) * 2014-09-01 2016-03-03 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102014114194B4 (de) * 2014-09-30 2023-10-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102018119734A1 (de) * 2018-08-14 2020-02-20 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit einem trägerelement, welches ein elektrisch leitendes material umfasst
DE102020124258A1 (de) 2020-09-17 2022-03-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement und verfahren zur herstellung zumindest eines optoelektronischen halbleiterbauelements

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DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
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Also Published As

Publication number Publication date
US20120043572A1 (en) 2012-02-23
US9620680B2 (en) 2017-04-11
EP2340568B1 (de) 2017-03-01
JP2015039024A (ja) 2015-02-26
KR20110069149A (ko) 2011-06-22
KR101634410B1 (ko) 2016-06-28
JP5876557B2 (ja) 2016-03-02
JP2012505531A (ja) 2012-03-01
JP5635517B2 (ja) 2014-12-03
EP2340568A1 (de) 2011-07-06
TWI415302B (zh) 2013-11-11
TW201025680A (en) 2010-07-01
CN102177595A (zh) 2011-09-07
DE102008051048A1 (de) 2010-04-15
WO2010040337A1 (de) 2010-04-15

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