TWI414900B - 曝光方法及儲存電腦程式之記憶媒體 - Google Patents
曝光方法及儲存電腦程式之記憶媒體 Download PDFInfo
- Publication number
- TWI414900B TWI414900B TW098122638A TW98122638A TWI414900B TW I414900 B TWI414900 B TW I414900B TW 098122638 A TW098122638 A TW 098122638A TW 98122638 A TW98122638 A TW 98122638A TW I414900 B TWI414900 B TW I414900B
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Links
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- 238000013461 design Methods 0.000 description 12
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008181977A JP5153492B2 (ja) | 2008-07-11 | 2008-07-11 | 露光条件決定方法およびコンピュータプログラム |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201017342A TW201017342A (en) | 2010-05-01 |
| TWI414900B true TWI414900B (zh) | 2013-11-11 |
Family
ID=41505447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098122638A TWI414900B (zh) | 2008-07-11 | 2009-07-03 | 曝光方法及儲存電腦程式之記憶媒體 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8029954B2 (enExample) |
| JP (1) | JP5153492B2 (enExample) |
| KR (1) | KR101108084B1 (enExample) |
| TW (1) | TWI414900B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5574749B2 (ja) * | 2010-02-24 | 2014-08-20 | キヤノン株式会社 | 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム、情報処理装置 |
| JP5513324B2 (ja) * | 2010-09-01 | 2014-06-04 | キヤノン株式会社 | 決定方法、露光方法及びプログラム |
| JP5539140B2 (ja) * | 2010-09-28 | 2014-07-02 | キヤノン株式会社 | 決定方法、露光方法、プログラム及びコンピュータ |
| JP5686567B2 (ja) * | 2010-10-19 | 2015-03-18 | キヤノン株式会社 | 露光条件及びマスクパターンを決定するプログラム及び方法 |
| JP5539148B2 (ja) * | 2010-10-19 | 2014-07-02 | キヤノン株式会社 | レジストパターンの算出方法及び算出プログラム |
| JP5835968B2 (ja) * | 2011-07-05 | 2015-12-24 | キヤノン株式会社 | 決定方法、プログラム及び露光方法 |
| NL2008957A (en) | 2011-07-08 | 2013-01-09 | Asml Netherlands Bv | Methods and systems for pattern design with tailored response to wavefront aberration. |
| JP6108693B2 (ja) * | 2012-06-08 | 2017-04-05 | キヤノン株式会社 | パターン作成方法 |
| US9496117B2 (en) * | 2014-01-20 | 2016-11-15 | Varian Semiconductor Equipment Associates, Inc. | Two-dimensional mass resolving slit mechanism for semiconductor processing systems |
| US10211027B2 (en) | 2016-08-03 | 2019-02-19 | Nuflare Technology, Inc. | Method for measuring resolution of charged particle beam and charged particle beam drawing apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6839125B2 (en) * | 2003-02-11 | 2005-01-04 | Asml Netherlands B.V. | Method for optimizing an illumination source using full resist simulation and process window response metric |
| US7030966B2 (en) * | 2003-02-11 | 2006-04-18 | Asml Netherlands B.V. | Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations |
| US20060192935A1 (en) * | 2003-02-11 | 2006-08-31 | Asml Netherlands B.V. | Correction of optical proximity effects by intensity modulation of an illumination arrangement |
| US7180576B2 (en) * | 2003-02-11 | 2007-02-20 | Asml Netherlands B.V. | Exposure with intensity balancing to mimic complex illuminator shape |
| US7245356B2 (en) * | 2003-02-11 | 2007-07-17 | Asml Netherlands B.V. | Lithographic apparatus and method for optimizing illumination using a photolithographic simulation |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004079714A (ja) * | 2002-08-14 | 2004-03-11 | Renesas Technology Corp | アパーチャの最適形状決定装置 |
| JP2004288694A (ja) * | 2003-03-19 | 2004-10-14 | Renesas Technology Corp | 半導体装置の製造方法およびそのシステム |
| JP2007520892A (ja) * | 2004-02-03 | 2007-07-26 | メンター・グラフィクス・コーポレーション | イメージの忠実度およびスループットに対する光源の最適化 |
| JP2008124308A (ja) * | 2006-11-14 | 2008-05-29 | Canon Inc | 露光方法及び露光装置、それを用いたデバイス製造方法 |
| JP5224687B2 (ja) * | 2006-12-22 | 2013-07-03 | キヤノン株式会社 | 露光条件算出プログラム及び露光条件算出方法 |
-
2008
- 2008-07-11 JP JP2008181977A patent/JP5153492B2/ja not_active Expired - Fee Related
-
2009
- 2009-07-03 TW TW098122638A patent/TWI414900B/zh not_active IP Right Cessation
- 2009-07-06 KR KR1020090061065A patent/KR101108084B1/ko not_active Expired - Fee Related
- 2009-07-08 US US12/499,730 patent/US8029954B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6839125B2 (en) * | 2003-02-11 | 2005-01-04 | Asml Netherlands B.V. | Method for optimizing an illumination source using full resist simulation and process window response metric |
| US7016017B2 (en) * | 2003-02-11 | 2006-03-21 | Asml Netherlands B.V. | Lithographic apparatus and method for optimizing an illumination source using isofocal compensation |
| US7030966B2 (en) * | 2003-02-11 | 2006-04-18 | Asml Netherlands B.V. | Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations |
| US20060192935A1 (en) * | 2003-02-11 | 2006-08-31 | Asml Netherlands B.V. | Correction of optical proximity effects by intensity modulation of an illumination arrangement |
| US7180576B2 (en) * | 2003-02-11 | 2007-02-20 | Asml Netherlands B.V. | Exposure with intensity balancing to mimic complex illuminator shape |
| US7245356B2 (en) * | 2003-02-11 | 2007-07-17 | Asml Netherlands B.V. | Lithographic apparatus and method for optimizing illumination using a photolithographic simulation |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20100007731A (ko) | 2010-01-22 |
| TW201017342A (en) | 2010-05-01 |
| JP2010021443A (ja) | 2010-01-28 |
| KR101108084B1 (ko) | 2012-01-31 |
| US20100009275A1 (en) | 2010-01-14 |
| JP5153492B2 (ja) | 2013-02-27 |
| US8029954B2 (en) | 2011-10-04 |
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| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |