KR101108084B1 - 노광방법 및 컴퓨터 프로그램을 기억한 메모리 매체 - Google Patents

노광방법 및 컴퓨터 프로그램을 기억한 메모리 매체 Download PDF

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Publication number
KR101108084B1
KR101108084B1 KR1020090061065A KR20090061065A KR101108084B1 KR 101108084 B1 KR101108084 B1 KR 101108084B1 KR 1020090061065 A KR1020090061065 A KR 1020090061065A KR 20090061065 A KR20090061065 A KR 20090061065A KR 101108084 B1 KR101108084 B1 KR 101108084B1
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South Korea
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value
evaluation
line width
exposure condition
exposure
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Korean (ko)
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KR20100007731A (ko
Inventor
코지 미카미
코우이치로우 츠지타
히로유키 이시이
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020090061065A 2008-07-11 2009-07-06 노광방법 및 컴퓨터 프로그램을 기억한 메모리 매체 Expired - Fee Related KR101108084B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008181977A JP5153492B2 (ja) 2008-07-11 2008-07-11 露光条件決定方法およびコンピュータプログラム
JPJP-P-2008-181977 2008-07-11

Publications (2)

Publication Number Publication Date
KR20100007731A KR20100007731A (ko) 2010-01-22
KR101108084B1 true KR101108084B1 (ko) 2012-01-31

Family

ID=41505447

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090061065A Expired - Fee Related KR101108084B1 (ko) 2008-07-11 2009-07-06 노광방법 및 컴퓨터 프로그램을 기억한 메모리 매체

Country Status (4)

Country Link
US (1) US8029954B2 (enExample)
JP (1) JP5153492B2 (enExample)
KR (1) KR101108084B1 (enExample)
TW (1) TWI414900B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5574749B2 (ja) * 2010-02-24 2014-08-20 キヤノン株式会社 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム、情報処理装置
JP5513324B2 (ja) * 2010-09-01 2014-06-04 キヤノン株式会社 決定方法、露光方法及びプログラム
JP5539140B2 (ja) * 2010-09-28 2014-07-02 キヤノン株式会社 決定方法、露光方法、プログラム及びコンピュータ
JP5686567B2 (ja) * 2010-10-19 2015-03-18 キヤノン株式会社 露光条件及びマスクパターンを決定するプログラム及び方法
JP5539148B2 (ja) * 2010-10-19 2014-07-02 キヤノン株式会社 レジストパターンの算出方法及び算出プログラム
JP5835968B2 (ja) * 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
NL2008957A (en) 2011-07-08 2013-01-09 Asml Netherlands Bv Methods and systems for pattern design with tailored response to wavefront aberration.
JP6108693B2 (ja) * 2012-06-08 2017-04-05 キヤノン株式会社 パターン作成方法
US9496117B2 (en) * 2014-01-20 2016-11-15 Varian Semiconductor Equipment Associates, Inc. Two-dimensional mass resolving slit mechanism for semiconductor processing systems
US10211027B2 (en) 2016-08-03 2019-02-19 Nuflare Technology, Inc. Method for measuring resolution of charged particle beam and charged particle beam drawing apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6839125B2 (en) 2003-02-11 2005-01-04 Asml Netherlands B.V. Method for optimizing an illumination source using full resist simulation and process window response metric

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079714A (ja) * 2002-08-14 2004-03-11 Renesas Technology Corp アパーチャの最適形状決定装置
US7030966B2 (en) 2003-02-11 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations
US7245356B2 (en) * 2003-02-11 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and method for optimizing illumination using a photolithographic simulation
US7471375B2 (en) * 2003-02-11 2008-12-30 Asml Netherlands B.V. Correction of optical proximity effects by intensity modulation of an illumination arrangement
US7180576B2 (en) * 2003-02-11 2007-02-20 Asml Netherlands B.V. Exposure with intensity balancing to mimic complex illuminator shape
JP2004288694A (ja) * 2003-03-19 2004-10-14 Renesas Technology Corp 半導体装置の製造方法およびそのシステム
JP2007520892A (ja) * 2004-02-03 2007-07-26 メンター・グラフィクス・コーポレーション イメージの忠実度およびスループットに対する光源の最適化
JP2008124308A (ja) * 2006-11-14 2008-05-29 Canon Inc 露光方法及び露光装置、それを用いたデバイス製造方法
JP5224687B2 (ja) * 2006-12-22 2013-07-03 キヤノン株式会社 露光条件算出プログラム及び露光条件算出方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6839125B2 (en) 2003-02-11 2005-01-04 Asml Netherlands B.V. Method for optimizing an illumination source using full resist simulation and process window response metric
US7016017B2 (en) 2003-02-11 2006-03-21 Asml Netherlands B.V. Lithographic apparatus and method for optimizing an illumination source using isofocal compensation

Also Published As

Publication number Publication date
KR20100007731A (ko) 2010-01-22
TW201017342A (en) 2010-05-01
JP2010021443A (ja) 2010-01-28
US20100009275A1 (en) 2010-01-14
JP5153492B2 (ja) 2013-02-27
US8029954B2 (en) 2011-10-04
TWI414900B (zh) 2013-11-11

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