TWI409119B - Insert-chip, plasma torch and plasma processing device - Google Patents

Abstract

PURPOSE: An insert chip, a plasma torch, and a plasma processing apparatus are provided to form one fusion pool with a plurality of arcs by using a plasma torch installed with the insert chip. CONSTITUTION: A chip(1) comprises an opening accepting the electrode on the top. A plurality of electrode arrangement spaces(1a, 1b) is expanded from the opening to the lower end surface of the chip. A plurality of openings(4a, 4b) is distributed along the line perpendicular to the central axis. The openings are formed downward.

Description

Embedded wafer, plasma torch and plasma processing device

The present invention relates to an embedded wafer for a plasma torch, a plasma torch using the embedded wafer, and a plasma processing apparatus using the same.

【Background technique】

The plasma torch has various forms of high-heat processing types such as welding, thick-walling, and cutting. In Patent Document 1, it is described immediately below the front end of the electrode rod 10, and the feed line 16 is started from the side, and the base material (processing target material) positioned below the tip end of the electrode rod is plasma-welded and heated in the form of a plasma. A method of welding, plasma MIG welding or thickening of plasma lines. Patent Document 2 describes a wire feed hole in the center of the embedded wafer 111, and vertically feeds the wire 153 to the base material below, and the electrode bar 126 disposed on the side of the wire is parallel to the wire. The plasma hole 113 opened by the wire through hole at the lower portion of the wafer 111 is sprayed with plasma, and the plasma MIG welding torch at the front end of the melting line is welded. Patent Document 3 describes a plasma welding method and a plasma line thickening method in which a plasma nozzle of an embedded wafer 1 of an electrode rod is disposed at a center position, and a heating line of a feeding line 3 is provided at a side. Patent Document 4 describes a pit formed by plasma of a plasma torch in which an electrode rod is disposed toward a center position of the embedded wafer 33, and a plasma MIG which is supplied as a line 39 of a consumable electrode is conveyed from the side of the plasma torch. Welding. Patent Document 5 describes that the bottom hole of the bottomed cylindrical plasma electrode 8 disposed in the center of the bottomed cylindrical plasma electrode 8 and the nozzle plasma spray nozzle disposed below the plasma injection nozzle of the embedded wafer 9 is vertically The plasma supply MIG welding method is performed by transferring the supply line to the base material below and melting the plasma generated by the plasma electrode 8.

Patent Document 6 describes a nozzle shape which improves the cross-sectional shape of a keyhole caused by welding of a plasma keyhole. Patent Document 7 describes an arrangement in which the two arc welding torches are arranged perpendicular to the welding electrode direction to form a molten pit pool. The torch is caused by the simultaneous welding. Patent Document 8 describes a composite welding method in which a molten pool of 0 to 2 mm in front of an aiming position of arc welding is subjected to keyhole welding by irradiating a laser (FIG. 15, [0024], [0025]). Patent Document 9 describes a laser welding method in which a first laser beam is not penetrated by a first laser beam, and a hole opening formed by the non-through welding is used to align a focus and a second laser beam is penetrated (keyhole). .

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Publication No. Sho 39-15267

[Patent Document 2] Japanese Patent Laid-Open No. 52-138038

[Patent Document 3] Japanese Patent Laid-Open Publication No. SHO 53-31544

[Patent Document 4] Japanese Patent Laid-Open Publication No. 2006-519103

[Patent Document 5] Japanese Patent Laid-Open Publication No. 2008-229641

[Patent Document 6] Japanese Patent Publication No. 8-10957

[Patent Document 7] Japanese Patent Publication No. Hei 6-150518

[Patent Document 8] Japanese Patent Laid-Open Publication No. 2004-298896

[Patent Document 9] Japanese Patent Laid-Open Publication No. 2008-126315

[Summary of the Invention]

Any of the welding methods and the plasma torch system of Patent Documents 1 to 4 also use an electrode rod and a wire for the plasma flow formed between the electrode rod and the base material, from the side between the electrode rod/base material The transmission supply line is energized, and therefore, the magnetic imbalance is generated by the interaction of the magnetic flux generated by the line current and the magnetic flux generated by the plasma current. That is, the plasma arc state is different at the upper side (the embedded wafer side) and the lower side (the base material side) than the line, and the line side is different. The plasma is in the direction of leaving the line and is subjected to the arc force. The plasma on the lower side of the line is in the direction of the line and is subjected to the arc force. As the front end of the wire is shaken and shakes, the position of the plasma relative to the base material is shaken, so that the plasma arc is unstable. In Patent Document 5, at the circumferential edge of the bottom hole of the bottomed cylindrical plasma electrode 8, the arc is concentrated, and the concentrated point is moved in the peripheral direction. Therefore, the plasma is still shaken, and the circumferential edge of the bottom hole of the plasma electrode 8 is The loss of the nozzle edge of the embedded wafer 9 and the adhesion to the plasma electrode 8 of the molten wire or to the plasma nozzle 9 become intense, and the long-term stable welding operation cannot be maintained.

The cross section of the plasma arc welded by the plasma arc caused by one of the conventional torches is as shown in a schematic circular shape as shown in Fig. 18(a). When the thickness of the plate is less than 3 mm, the keyhole welding cannot be performed by the plasma arc, and the co-fusion welding (thermal conduction type welding) is used. However, even if the welding is performed at a high speed, a) undercut occurs. (undercut), B) is prone to high temperature cracking caused by wide bead (Fig. 18 (b)). At high speed welding, the current is high current and becomes a wide arc, so it becomes a wide shallow fusion. The shape of the bead is prone to high temperature cracking during solidification.

By welding the plasma arc caused by one of the conventional torches, when the keyhole is welded at a speed of 3 to 10 mm, the shape of the bead is as shown in Fig. 18(c), and the convex portion of the central portion is formed. The shape and the undercut of the edge portion are lowered, so that it is not easy to speed up. There is also a single pit pool speeding up by two torches, but in order to become a single pit pool, it is necessary to greatly tilt the magnetic blows caused by the arc forces inclined to each other between the torches. The arc is easily scattered and unstable.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an embedded wafer, plasma torch and plasma processing apparatus that can perform high quality plasma processing at high speed.

(1) An embedded wafer (1: Fig. 3, Fig. 14, Fig. 17, Fig. 21, Fig. 26, Fig. 27), which is provided with an opening at the upper end of the wafer to accommodate a non-consumable electrode And extending from the opening toward the lower end surface of the wafer, along a plurality of electrode arrangement spaces (1a, 1b, 1c) distributed orthogonally to the central axis of the wafer, and having a smaller diameter than the electrode arrangement space, the electrode arrangement space reaching the foregoing In front of the lower end, at least one plasma arc nozzle (4a, 4b, 4c) that is connected to the electrode arrangement space and opens below the lower end surface.

In addition, for the sake of easy understanding, the corresponding elements or equivalent elements of the embodiments shown in the drawings are shown in the parentheses, and the attached notes are incorporated by reference. The same is true for the following.

Embodiment of the Invention

(2) The embedded wafer (1: FIG. 3, FIG. 5) described in the above (1) is a core-centered hole (5) that is concentric with the central axis of the wafer from the upper end surface to the lower end surface. The plurality of electrode arrangement spaces (1a, 1b) are distributed on the circumference centered on the central axis of the central hole at equal angular intervals, and the plasma arc nozzles (4a, 4b) are attached to the aforementioned central axis. As the center of the circle, the equal distance between the equal angles is a plurality of cloths.

According to the embedded wafer, the respective electrodes (2a, 2b) inserted into the electrode arrangement spaces (1a, 1b) and the processing target (16) flow through the respective nozzles (4a, 4b: Fig. 5). The arc currents between the two sensed magnetic fluxes Ma and Mb respectively cancel each other out, so the lower part acts, and the upward force is expressed by the Fleming left-hand rule. Pull each other and become a symmetrical shape that is slightly curved above. Further, on the circumference centered on the central axes of the nozzles (4a, 4b) and the center hole (5), the distribution of the equiangular pitch is the same for each force and centered on the central axis of the center hole (5) On the circumference, the distance between the equiangular angles is distributed, and therefore, the stability of the plasma becomes high. That is, there is no magnetic A magnetic blow occurs and the arc is shaken. In the vicinity of the processing target material (16), each arc current is added to the same direction to induce the resultant magnetic flux Mc. Therefore, the magnetic pressing force of the concentrated arc becomes strong, and the heat shrinkage effect (energy density) for the processing target material (16) is obtained. It becomes high and the action position is not shaken.

(3) The embedded wafer (1) according to the above (2) is further provided to be opened to be connected to the center hole (5) and to face the front end surface of the target material (16), and has a larger diameter than the center hole (5). In the enlarged opening (1d) of the large diameter, the nozzles (4a, 4b) are opened at the inner side of the front end surface, and the enlarged opening (1d) is opened. According to the embedded wafer, the arc currents flowing between the electrodes (2a, 2b) inserted into the electrode arrangement spaces (1a, 1b) and the processing target (16) are combined to flow to the front end surface of the embedded wafer. (Before expanding the opening of the base material of the port 1d), therefore, the plasma arcs can be merged at the shortest distance, so that the arc bending change due to mutual magnetic interference can be reduced, and the arc is stabilized by stability. Precision.

(4) A plasma torch (Fig. 2) comprising the embedded wafer (1) according to (2) or (3) above, and guiding the embedded wafer (1) at the central hole (5) a wire member (13g, 6) of the wire (15), and a plurality of electrode arrangement spaces (1a, 1b) of the embedded wafer (1) for inserting a plurality of non-consumable electrodes (2a, 2b) at the front end portion, and The cooling water flow path (9w) of the embedded wafer (1) is cooled, and a guiding gas flow path (9p) for supplying a guiding gas to each electrode arrangement space (1a, 1b).

(5) A plasma welding apparatus (Fig. 1) comprising the plasma torch according to (4) above, and between the plurality of non-consumable electrodes (2a, 2b) and the processing target (16), causing the electrode side to flow A negative plasma arc current and a source of positive plasma arc current flowing on the target side (17, 18).

(6) The plasma welding device (Fig. 6) described in the above (5) is attached to the aforementioned line (15) Between the processing target (16), there is a heating line power supply (21) that flows a negative current on the line side and flows a positive current on the processing target side.

(7) A plasma MIG welding apparatus (Fig. 7) comprising the plasma torch according to (4) above, and flowing between the plurality of non-consumable electrodes (2a, 2b) and the processing target (16) Positive plasma arc current and power source (17, 18) for flowing negative plasma arc current on the target side, and between the above line (15) and the processing target (16), the positive current flows on the line side and the target side is processed. A negative current MIG welding power supply (22).

(8) A plasma-line thick-wall apparatus (Fig. 8) comprising the plasma torch described in the above (4), and between the plurality of non-consumable electrodes (2a, 2b) and the processing target (16), and the electrode side a negative negative plasma arc current and a power source (17, 18) for flowing a positive plasma arc current on the target side, and between the line (15) and each of the electrodes (2a, 2b), causing a positive current on the line side and an electrode side A heating line power source (21a, 21b) that flows a negative current.

(9) A plasma powder thick-walled torch (Fig. 9) comprising the embedded wafer (1) according to (2) or (3) above, and the central hole (5) of the embedded wafer (1) a powder guiding member (26) for guiding the powder (23), and a plurality of non-consumable electrodes (2a, 2b) inserted into the front end portion of the electrode arrangement spaces (1a, 1b) of the embedded wafer (1), and A cooling water flow path (9w) for cooling the embedded wafer (1), and a guiding gas flow path (9p) for supplying a guiding gas to each electrode arrangement space (1a, 1b).

(10) A plasma powder thick-wall apparatus (Fig. 9) comprising the plasma powder thick-walled torch according to (9) above, and the plurality of non-consumable electrodes (2a, 2b) and a processing target (16) , the power source (17, 18) for flowing the negative plasma arc current on the electrode side and the positive plasma arc current flowing on the target side, and the powder guide (26) for supplying the powder (24, 25) ).

(11) A plasma keyhole welding torch (Fig. 10) comprising the embedded wafer (1) according to (2) or (3) above, and the central hole (5) of the embedded wafer (1) a gas guiding member (28) for guiding the keyhole gas (27), and a plurality of non-consumable electrodes (2a, 2b) inserted into the front end portion of the electrode arrangement spaces (1a, 1b) of the embedded wafer (1), and A cooling water flow path (9w) for cooling the embedded wafer (1), and a guiding gas flow path (9p) for supplying a guiding gas to each electrode arrangement space (1a, 1b).

(12) A plasma keyhole welding device (Fig. 10) comprising the plasma keyhole welding torch according to (11) above, and between the plurality of non-consumable electrodes (2a, 2b) and the processing target material (16), A power source (17, 18) that causes a negative plasma arc current to flow on the electrode side and a positive plasma arc current flows on the target side.

(13) A plasma cutting torch (Fig. 11) comprising the embedded wafer (1) according to (2) or (3) above, and the central hole (5) of the embedded wafer (1) a gas guide (28) for guiding the cutting gas (29), and a plurality of non-consumable electrodes (2a, 2b) inserted into the front end portion of the electrode arrangement spaces (1a, 1b) of the embedded wafer (1), And a cooling water flow path (9w) for cooling the embedded wafer (1), and a guiding gas flow path (9p) for supplying a pilot gas to each electrode arrangement space (1a, 1b).

(14) A plasma cutting device (Fig. 11) comprising the plasma cutting torch according to (13) above, and between the plurality of non-consumable electrodes (2a, 2b) and the processing target (16) A negative plasma arc current flows on the electrode side and supplies a positive plasma arc current to the target side (17, 18). That is, it is convenient to use any of the above forms (4) to (14), and the effect of the above (2) is also obtained.

(15) The embedded wafer (1) according to the above (1), wherein the plurality of electrode arrangement spaces (1a, 1b) are two, and the plasma arc nozzles (4a, 4b) are distributed on the same diameter line and are respectively connected to each other. To each electrode arrangement space (1a, 1b) and facing Two of the weld lines parallel to the aforementioned diameter line are opened.

By installing the plasma torch of the embedded wafer (1), arc welding of a single pit pool forming a pool of molten pits by two arcs can be performed. In this state, the cross section of the plasma arc is as shown in FIG. 18(d), and becomes a slender heat source in the direction y of the welding, so the width of the bead relative to the heat (x direction) is It is suppressed from narrowing, and even if it is speeded up, high temperature cracking does not occur. Moreover, by forming a single pit and two arcs, when the thickness is 3 to 10 mm, the arc is first performed to perform keyhole welding (Fig. 18 (c) or (e)), and then the arc is widened. The welding is performed to flatten the surface bead (Fig. 18(g)). When the thickness of the sheet is less than 3 mm, the surface bead may be flattened by the subsequent arc by the forward arc (Fig. 18 (e)) (Fig. 18 (f)).

It can be slightly similarly welded by using parallel welding of two plasma torches away from a certain distance, but the arc interval of the welding direction y is widened, so that the workpiece of the short welding length (welding target) cannot be the same For the welding of the channel, it is necessary to perform two-channel welding, which is not easy to speed up. Further, since the arc interval is widened, the trailing arc system must be remelted once to solidify the bead, and when it is welded later, it is required to be heated. If the single-pit two-arc welding of the embedded wafer of the present invention having two nozzles in one wafer is used, the interval between the nozzles becomes short, and therefore, the problems are solved.

(16) The embedded wafer (1) according to the above (15) is characterized in that the plasma arc nozzles (4a, 4b) are parallel to the vertical line (z) of the lower end surface (x, y) (Fig. 14).

(17) The embedded wafer (1) according to (15) above is a vertical line (z) of the plasma arc nozzle (4a, 4b) with respect to the lower end surface (x, y) on the diameter line. The nozzle opening is inclined away from the central axis of the wafer (Fig. 17).

(18) The embedded wafer (1) according to the above (16) or (17), wherein the respective electrode arrangement spaces (1a, 1b) are parallel to the vertical line (z) of the lower end surface (x, y).

(19) A plasma torch (Fig. 13/16) comprising the embedded wafer (1) according to any one of (15) to (17) above, and the embedded wafer (1) Each of the electrode arrangement spaces (1a, 1b) is inserted into the two non-consumable electrodes (2a, 2b) of the respective front end portions.

(20) A plasma welding apparatus (Fig. 12) comprising the plasma torch according to (19) above, and a first power source for supplying or welding power to the first non-consumable electrode (2a) of the plasma torch (18ap, 18aw), and the second power source (18 bp, 18bw) for supplying the common non-consumable electrode or the main welding power to the second non-consumable electrode (2b).

(21) The embedded wafer (1: FIG. 19) according to the above (1), wherein the plurality of electrode arrangement spaces (1a, 1b, 1c) include a head electrode arrangement space (1a) before being distributed on a straight line in the welding direction (y). ), one or more intermediate electrode arrangement spaces (1b) and rear end electrode arrangement spaces (1c).

By installing the plasma torch of the embedded wafer (1), a single pit multi-arc fusion forming a crater pool by three or more arcs can be performed. In this state, the cross section of the plasma arc is in the direction y of the welding, and becomes an elongated heat source. Therefore, the width (x direction) of the bead with respect to heat is suppressed and narrowed, and even if the speed is increased, High temperature cracking occurred. Moreover, by forming a single pit pool and multiple arcs, when the thickness is 3 to 10 mm, the front arc is preheated by the fuse, and the intermediate arc is used to form the inner bead caused by the keyhole, and then the tail end arc is performed. Wide-width co-fusion, flat surface bead formation. When the thickness of the plate is less than 3 mm, the welding wire can be preheated by the front arc, and the inner bead is formed by digging under the arc caused by the intermediate arc, and the surface bead is flattened by the arc at the rear end. Even in any case, the inner bead caused by the intermediate arc is easily formed by the preheating of the front arc, so that a good inner bead can be formed and high-speed welding can be performed.

(22) The embedded wafer (1: Fig. 25) described in the above (21) is connected to the intermediate electrode arrangement space (1b) and the rear end electrode arrangement space (1c). The distance between the plasma arc nozzles (4b, 4c) is longer than the distance between the plasma arc nozzles (4a, 4b) connected to the front electrode arrangement space (1a) and the intermediate electrode arrangement space (1b).

(23) The embedded wafer (1: Form 1) described in (21) or (22) above is connected to the plasma arc nozzles (4a, 4b, 4c) in the respective electrode arrangement spaces (1a, 1b, 1c).

(24) The embedded wafer (1: Form 2/4) according to (21) or (22), wherein the front electrode arrangement space (1a) or the rear end electrode arrangement space (1c) is a TIG fusion electrode. hole.

(25) The embedded wafer (1: Form 3) according to the above (21) or (22), wherein the front electrode arrangement space (1a) and the rear end electrode arrangement space (1c) are holes through which the TIG welding electrodes pass.

(26) The embedded wafer (1: aspect 5) according to the above (21) or (22), wherein the plasma arc nozzle is connected to the front electrode arrangement space (1a), the intermediate electrode arrangement space (1b) and the foregoing The rear end electrode arrangement space (1c) is a hole through which the TIG welding electrode penetrates.

(27) A plasma torch comprising the embedded wafer (1) according to (21) above, and a plurality of non-inserted portions (1a, 1b, 1c) of the embedded wafer (1) inserted into each of the front end portions The electrodes (2a, 2b, 2c) are consumed.

(28) A plasma welding apparatus comprising the plasma torch according to (27) above, and a first power source (18ap, 18aw) for supplying preheating power to the non-consumable electrode (2a) before the plasma torch, and The intermediate non-consumable electrode (2b) supplies a second power source (18 bp, 18bw) for power generation of the bead forming power, and a third power source (18 cp, 18cw) for supplying power to the rear end non-consumable electrode (2c).

(29) A plasma welding apparatus comprising a plurality of electrode arrangement spaces (1a, 1b, 1c) having the embedded wafer (1) according to (22) inserted into each of the front end portions a plasma torch of the non-consumable electrode (2a, 2b, 2c), and a first power source (18ap, 18aw) for supplying preheating power to the non-consumable electrode (2a) before the plasma torch, and an intermediate non-consumable electrode (2b) The second power source (18 bp, 18bw) for supplying power to the keyhole splicing power, and the third power source (18 cp, 18cw) for supplying power to the rear end non-consumable electrode (2c).

(30) The plasma welding apparatus (1) of the above (28) or (29) is a first, second, and third power plasma welding power source.

(31) The plasma welding apparatus (FIG. 2/4) according to (28) or (29), wherein the front electrode arrangement space (1a) or the rear end electrode arrangement space (1c) of the embedded wafer is TIG fusion The hole through which the electrode passes, the first power source or the third power source is a TIG welding power source, and the other power source is a plasma welding power source.

(32) The plasma welding apparatus according to (28) or (29), wherein the front electrode arrangement space (1a) and the rear end electrode arrangement space (1c) of the embedded wafer are TIG welding electrodes. The hole, the first power source and the third power source are TIG welding power sources, and the second power source is a plasma welding power source.

(33) The plasma welding apparatus according to (28) or (29), wherein the plasma arc nozzle is connected to the front electrode arrangement space (1a) of the embedded wafer, and the intermediate electrode arrangement space is 1b) and the rear end electrode arrangement space (1c) is a hole through which the TIG welding electrode penetrates, the first power source is a plasma welding power source, and the second and third power sources are TIG welding power sources.

The other objects and features of the present invention are clearly shown by the following description of the embodiments of the drawings.

By installing the plasma torch of the embedded wafer (1), a plurality of arc high-speed machining of a single pit pool of a molten pit pool by a plurality of torches can be performed.

1‧‧‧ embedded chip

1a, 1b‧‧‧electrode configuration space

1a, 1b, 1c‧‧‧ electrode configuration space at the front, middle and rear ends

1d‧‧‧Expanded

2a‧‧‧1st electrode (front electrode)

2b‧‧‧2nd electrode, (middle electrode)

2c‧‧‧ rear end electrode

3‧‧‧ Centering Stone

4‧‧‧ nozzle

4a‧‧‧ front nozzle

4b‧‧‧Intermediate nozzle

4c‧‧‧ rear end nozzle

5‧‧‧Central hole

6‧‧‧ wire pieces

7‧‧‧Embedded cover

8‧‧‧Protection cover

9‧‧‧Insulation

9w‧‧‧Cooling waterway

9p‧‧‧Guided gas flow path

9s‧‧‧Protective gas flow path

10 (10a, 10b, 10c) ‧ ‧ electrode fixing screws

11‧‧‧1st electrode stage, front electrode stage

12‧‧‧2nd electrode stage, rear end stage electrode stage

13eb‧‧‧Intermediate electrode table

13g‧‧‧ wire pieces

14‧‧‧Insulated body

Line 15‧‧‧

16‧‧‧Material

17, 18‧‧‧ power supply

19‧‧‧ Plasma

20‧‧ ‧ pit pool

Ma‧‧‧1st arc induced magnetic flux

Inductive flux of the second arc of Mb‧‧‧

Mc‧‧‧Synthetic magnetic flux

21, 21a, 21b‧‧‧ heating wire power supply

22‧‧‧MIG welding power supply

24‧‧‧ powder tank

25‧‧‧ powder supply machine

26‧‧‧ powder guides

27‧‧‧Keyhole gas

28‧‧‧ powder guides

29‧‧‧Scissing gas

30‧‧‧Outer box

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a longitudinal sectional view showing a plasma torch according to a first embodiment of the present invention.

Figure 2 (a) shows only a longitudinal section of the plasma torch of Figure 1, and Figure 2 (b) shows a bottom view of the end of the plasma jet.

Figure 3 is an enlarged view showing the embedded wafer 1 shown in Figure 1, and the front view of Figure 3 (a), and Figure 3 (b) is a longitudinal sectional view of the line 2b-2b on (c), and Three (c) is a bottom view.

Fig. 4 shows a cooling water passage 9w, a pilot gas flow path 9p and a protective gas flow path 9s of the plasma torch shown in Fig. 1, and Fig. 4(a) shows a longitudinal sectional view of the cooling water passage 9w, and Fig. 4 ( b) is a longitudinal sectional view showing the guiding gas flow path 9p and a longitudinal sectional view of the 4b-4b line on (c), and a cross-sectional view of the 4c-4c line on the line (c) and (b), and Figure 4 (d) shows a longitudinal sectional view of the protective gas flow path 9s and a longitudinal sectional view of the 4d-4d line on (e), and a horizontal line of 4e-4e on the line (e) of Figure 4 (d) Sectional view.

Fig. 5 is an enlarged longitudinal sectional view of the embedded wafer 1 corresponding to Fig. 3(b), showing the magnetic fluxes Ma and Mb and the combined magnetic flux Mc induced by the arcs generated by the first electrode 2a and the second electrode 2b.

Figure 6 is a longitudinal sectional view showing a plasma torch of a second embodiment of the present invention.

Figure 7 is a longitudinal sectional view showing a plasma torch of a third embodiment of the present invention.

Figure 8 is a longitudinal sectional view showing a plasma torch of a fourth embodiment of the present invention.

Figure 9 is a longitudinal sectional view showing a plasma torch of a fifth embodiment of the present invention.

Figure 10 is a longitudinal sectional view showing a plasma torch of a sixth embodiment of the present invention.

Figure 11 is a longitudinal sectional view showing a plasma torch of a seventh embodiment of the present invention.

Fig. 12 is a longitudinal sectional view and a block diagram showing a welding device for a plasma torch according to an eighth embodiment of the present invention.

Figure 13 (a) is a longitudinal sectional view of the plasma torch of Figure 12, and Figure 13 (b) is a bottom view from the side of the plasma injection end.

Figure 14 is an enlarged view showing the embedded wafer 1 of the plasma torch of the eighth embodiment shown in Figure 12, and Figure 14 (a) is a front view, and Figure 14 (b) is attached to (c) A longitudinal section of the upper 14b-14b line and a bottom view of Fig. 14(c).

Figure 15 is an enlarged cross-sectional view schematically showing the plasma arc behavior when a single pit and two arc welding is performed by the welding device shown in Figure 12.

Fig. 16 is a longitudinal sectional view showing the periphery of the embedded wafer of the plasma torch of the ninth embodiment using the embedded wafer of the ninth embodiment.

Figure 17 is an enlarged view showing the embedded wafer 1 of the ninth embodiment shown in Figure 16 and a front view of Figure 17 (a), and Figure 17 (b) is a 17b-(c) A longitudinal section of the 17b line and a bottom view of Fig. 17(c).

Figure 18 is a cross-sectional view schematically showing a plasma arc profile and a welded bead profile of a welding using a conventional plasma torch of the present invention, and Figure 18 (a) shows the electricity generated by a conventional plasma torch. The cross section of the slurry arc, and Fig. 18(b) show that the thickness of the weld bead is less than 3 mm, which is prone to the high-temperature co-welding of the high-temperature cracked weld bead, and Figure 18 (c) is 3 ~10mm to the known high-speed keyhole fusion to show a representative bead cross section, and Figure 18(d) shows the cross section of the plasma arc generated by the plasma torch of the present invention, and Figure 18 (e) Is a cross-sectional view showing the shape of the bead formed by the preheating or digging effect of the preceding arc when the thickness of the plasma torch of the present invention is less than 3 mm, and FIG. 18(f) A cross-sectional view showing the shape of a bead in which the bead is welded by a back arc, and FIG. 18(g) shows a high-speed welding using a thickness of 3 to 10 mm of the plasma torch of the present invention. Welding by the keyhole of the preceding arc to form the bead shown in (c) and welding the bead by means of a back-arc The cross-sectional shape of FIG.

Fig. 19 is a longitudinal sectional view and a block diagram showing a welding device for a plasma torch according to a tenth embodiment of the present invention.

Figure 20 (a) is a longitudinal section of the plasma torch of Figure 19, and Figure 20 (b) It is a bottom view viewed from the side of the plasma jet end.

Figure 21 is an enlarged view showing the embedded wafer 1 of the plasma torch of the tenth embodiment shown in Figure 19, and a front view of Figure 21 (a), and Figure 21 (b) is attached to (c) A longitudinal section of the upper 22B-22B line, and a bottom view of Figure 21 (c).

Figure 22 is a longitudinal sectional view of the plasma torch shown in Figure 19, and Figure 22 (a) shows an outline of the pipeline for supplying plasma gas in each electrode storage space, and Figure 22 ( b) is an outline showing a flow path for cooling the cooling water of the embedded wafer 1.

Figure 23 is a cross-sectional view schematically showing a cross section of a welded bead of a welding torch using the present invention, and Figure 23 (a) shows a bead formed by preheating of the front arc The shape, and Fig. 23(b) show the shape of the bead which is welded by the high-speed keyhole by the intermediate arc, and Fig. 23(c) shows the shape of the bead which is co-fused by the rear end arc. .

Fig. 24 is a schematic enlarged cross-sectional view showing the plasma arc behavior when the arc welding of the single pit 3 is performed by the welding device shown in Fig. 19.

Figure 25 is a longitudinal sectional view and a block diagram showing a welding device for a plasma torch according to an eleventh embodiment of the present invention.

Figure 26 is a longitudinal sectional view and a block diagram showing a welding device for a plasma torch according to a twelfth embodiment of the present invention.

Figure 27 is a longitudinal sectional view and a block diagram showing a welding device for a plasma torch according to a thirteenth embodiment of the present invention.

-First Embodiment -

1 shows a plasma welding device of the first embodiment, FIG. 2(a) shows only the plasma torch shown in FIG. 1, that is, the plasma welding torch of the first embodiment, and FIG. 2(b) shows the front end face of the torch. . The plasma welding torch of the first embodiment is in the form of plasma welding. The embedded wafer 1 is mounted on the insulating table 9 by screwing the embedded cover 7 with a screw. It is fixed to the insulating table 9. The protective cover 8 is fixed to the insulating table 9 by screwing. The first electrode 11 and the second electrode 12 (the (c), (e) of FIG. 4) separated in the x direction are in the inside of the insulator outer case 30. The hollow cylindrical rod of the insulative housing 14 passes through the space between the first electrode 11 and the second electrode 12, and the male screw of the front end portion of the rod is omitted from the center of the insulating table 9 and is omitted. The mother screw holes are shown, whereby the electrode stages 11 and 12 are clamped to be compressed in the longitudinal direction, and the insulating stage 9, the electrode stages 11, 12 and the insulating body 14 are integrally coupled.

The central hole 5 of the embedded wafer 1 has a central hole 5 at the axis of the insulating table 9 and the insulating body 14, and has a guiding hole coaxial with the central hole 5 (in the present embodiment, a wire hole). The lead member 6 is inserted into the central hole 5 of the embedded wafer 1, and the lead member 13g is also inserted into the axial guiding hole of the insulating body 14. The weld line 15 inserted into the head of the insulative housing 14 is fed to the embedded wafer 1 through the wire members 13g and 6.

The embedded wafer 1 is disposed on a circumference centered on a central axis of the central hole 5, and has two electrode arrangement spaces 1a, 1b which are distributed at an angular interval of 180 degrees and which are parallel to the central hole 5. Each of the electrode arrangement spaces is inserted into the insulating substrate 9 and fixed to the front end portions of the first electrode 2a and the second electrode 2b of the electrode pads 11 and 12 by screws 10a and 10b at the axial center position of each electrode arrangement space. Center the stone 3 for positioning. The front end surface of the embedded wafer 1 facing the base material 16 is concentric with the central hole 5, but the enlarged opening 1d having a larger diameter than the central hole 5 is connected to the nozzle 4 of each electrode arrangement space 1a, 1b (4a, 4b) is opened at the large diameter port 1d.

Figure 3 shows the embedded wafer 1 enlarged. In the embedded wafer 1 of the present embodiment, the central opening 5 having a through hole is opened in the enlarged opening 1d connected to the front end surface of the central hole 5 facing the base material 16 and having a diameter larger than the central opening 5, and is centrally The central axis of the hole 5 is distributed on the circumference of the center of the hole at a distance of 180 degrees and is located in parallel with the two electrode arrangement spaces 1a, 1b of the center hole 5, and is connected to the electrode arrangement spaces 1a, 1b to open the enlarged port 1d, and On the circumference centered on the central axis of the central hole 5 and 180 The two nozzles 4a, 4b are disposed at a distance between the two, and the nozzles 4a, 4b are opened to the enlarged opening 1d in the inner side of the embedded wafer 1 which is closer to the front end surface of the base material 16.

Further, in the present embodiment, a plasma torch embedded wafer in which a pair of (two) electrodes 2a and 2b are mounted, and an embedded wafer of a plasma torch using a plurality of electrodes, such as three or four, is provided in the center. The central axis of the hole 5 is on the circumference of the center, and is disposed at equal angular intervals and in parallel with the plurality of electrode arrangement spaces of the central hole 5, and is connected to each electrode arrangement space to open to the enlarged port 1d, and is opened to the central opening 5 The central axis serves as a plurality of nozzles distributed on the circumference of the center at equal angular intervals. For example, the embedded wafer of the plasma torch having three electrodes is provided in three electrode arrangement spaces which are distributed at a distance of 120 degrees on the circumference centering on the central axis of the central hole 5 and are located in parallel in the center hole 5, and are connected to Each of the electrode arrangement spaces is opened to the enlarged port 1d, and three nozzles are disposed at a distance of 120 degrees on the circumference centered on the central axis of the center hole 5. Further, the embedded wafer of the plasma torch having four electrodes is provided in four electrode arrangement spaces which are distributed on the circumference centered on the central axis of the center hole 5 and are spaced apart by 90 degrees and are located in parallel in the center hole 5. And four nozzles which are connected to the respective electrode arrangement spaces and are opened to the enlarged port 1d, and are distributed at a distance of 90 degrees on the circumference centered on the central axis of the center hole 5.

Further, the enlarged opening 1d is omitted, and the lower end of the center hole 5 and the nozzles 4a and 4b can be opened as the flat lower end surface of the wafer 1. Further, the electrode arrangement spaces 1a and 1b (and the electrodes 2a and 2b provided therein) are not only parallel to the center hole 5 but also have an inclined posture with an inclination angle with respect to the center hole 5.

Fig. 4 shows the cooling water flow path 9w of the plasma torch shown in Fig. 2, the pilot gas flow path 9p and the protective gas flow path 9s. The cooling water passes through the cooling water supply flow path 9wi shown in FIG. 4(a), and enters the space between the outer surface of the embedded wafer 1 and the inner surface of the embedded cover 7, thereby starting to drain through the cooling water. The flow path 9wo flows out of the torch. The gas channel of one side passes through the gas flow shown in Figures 4(b) and (c) The path 9pa and the electrode insertion space enter the electrode arrangement space 1a, pass through the nozzle 4a at the tip end portion of the electrode, and then ejected from the front end surface of the torch through the enlarged port 1d. The guide gas system of the other side enters the electrode arrangement space 1b through the gas flow path 9pb and the electrode insertion space, passes through the nozzle 4b at the tip end portion of the electrode, and then is ejected from the front end surface of the torch through the enlarged port 1d. The protective gas system enters the cylindrical space between the embedded cover 7 and the protective cover 8 through the protective gas flow path 9s shown in FIGS. 4(d) and (e), and then, before the torch The end face is ejected.

As shown in Fig. 1, by the electrodes 2a, 2b and the base material 16, the plasma electric currents 17, 18 which flow the negative plasma arc current on the electrode side and the positive plasma arc current on the base material side are arced at the electrodes 2a, 2b. At the same time, the plasma arc current flows between the electrodes 2a and 2b and the base material 16 to realize a two-hole arc welding of the pit. In the plasma arc 19, the supply line 15 is conveyed, and the opposing electrode 15 places the electrodes 2a, 2b and the nozzles 4 (4a, 4b) in a symmetrical position, so that the plasma is stabilized with respect to the line 15. That is, when referring to Fig. 5, the arc currents flowing between the electrodes 2a, 2b and the base material 16 inserted into the electrode arrangement spaces 1a, 1b through the respective nozzles 4a, 4b are respectively induced to the magnetic fluxes Ma, Mb The force acting upward (or downward: z) by the Fleming left-hand rule, in the same direction and on the circumference of the nozzles 4a, 4b centered on the central axis of the central hole 5, The distribution of the equiangular pitch is distributed on the circumference centered on the central axis of the central hole 5 at the same force and at equal angular intervals. Therefore, magnetic balance is obtained, and the stability of the plasma becomes high. That is, there is no arc sway due to a magnetic blow. In the vicinity of the base material 16, each arc current is added to the same direction, and the resultant magnetic flux Mc is induced. Therefore, the magnetic pressing force of the concentrated arc becomes strong, and the heat shrinkage effect (energy density) of the base material 16 becomes high, and the action position is increased. No shaking. Further, the line 15 starts from the upper end portion of the plasma arc 19 and reaches the molten pit pool 20, and receives heat from the arc, thereby acting as an effective preheating effect, improving the fusion efficiency of the wire, and forming a high-speed welding or a high-energy fusion welding. . Ignorance In the state in which the supply line is laterally conveyed, the line enters at a substantially right angle with respect to the plasma arc. Therefore, it is necessary to enter only the distance to the plasma arc to melt into the pool of the molten pit, and the wireless preheating effect is almost wireless. . Therefore, the fusion efficiency is lowered and the welding speed is also slowed down.

Further, according to the first embodiment, since the wire is inserted from the center, the wireless insertion direction is not required to control the rotation of the torch even if the curve is welded. It is conventional to insert the tying line in the direction of the torch. Therefore, when the curve is welded, the device for controlling the torch or the line needs to be rotated relative to the curve.

- Second embodiment -

Fig. 6 shows a plasma welding apparatus of the heating wire form of the second embodiment. The plasma torch is the same as the plasma welding torch of the heating wire configuration of the first embodiment, and the embedded wafer 1 is the same structure as the first embodiment shown in FIG. In the present embodiment, as shown in Fig. 6, between the electrodes 2a and 2b and the base material 16, there are provided plasma power sources 17, 18 for flowing a negative plasma arc current on the electrode side and a positive plasma arc current flowing on the base material side. This point is the same as that of the first embodiment, and between the line 15 and the base material 16, there is a heating line power source 21 that flows a negative current on the line side and a positive current flows on the base material side. The current from the heating wire power source 21 passes through the guiding member 13g in the torch, and is energized to the wire from the vicinity of the front end portion of the guiding member 13g. In the insulating guiding member 6, the wire is heated by Joule heat, and the plasma is 19 On the other hand, it merges with the plasma arc from the electrodes 2a and 2b, and flows into the base material 16. At this time, the Joule heat of the heating line current is the largest (concentrated) in the plasma region, so that the heat of fusion is increased, and the high-melting amount and the high-energy rate are welded, and high-speed welding can be performed. Further, since the heating line current and the plasma arc current from the electrodes 2a and 2b are symmetrical and coaxial, magnetic balance is obtained, and there is no arc sway due to magnetic blow. Other functions and effects are the same as in the first embodiment.

- Third embodiment -

Fig. 7 shows a plasma MIG welding device which becomes the third embodiment. The plasma torch is the same as the plasma MIG welding torch constructed in the first embodiment, and the embedded wafer 1 is also The same configuration as the first embodiment shown in FIG. In the present embodiment, as shown in Fig. 7, between the electrodes 2a and 2b and the base material 16, contrary to the state of the first embodiment, the positive electrode arc current flows on the electrode side and the negative plasma arc current flows on the base material side. Plasma power supply 17, 18 Further, between the wire 15 and the base material 16, there is a MIG welding power source (fixed voltage welding power source) 22 which has a line side current welding current and a negative welding current flowing on the base material side. Protect the gas system Ar or Ar+CO2 or CO2 or Ar+H2. The plasma MIG welding device has a high energy rate of MIG characteristics, deep melt characteristics and can be sputter-free welded. Further, it is possible to perform welding in an Ar atmosphere, and the formation of oxides in the molten metal is extremely small, and is suitable for a high-weight, high-tension material. Further, it is possible to prevent fusion failure or repair fusion failure in the initial portion of the aluminum welding. Other functions and effects are the same as in the first embodiment.

- Fourth embodiment -

Fig. 8 shows a plasma line thick wall device of the fourth embodiment. The plasma torch is the same as the plasma-line thick-walled torch constructed in the first embodiment, and the embedded wafer 1 is also constructed in the same manner as the first embodiment shown in FIG. In the present embodiment, as shown in FIG. 8, a plasma power source 17 and 18 are provided between the electrodes 2a and 2b and the base material 16, and a negative plasma arc current flows on the electrode side and a positive plasma arc current flows on the base material side, and Between the line 15 and each of the electrodes 2a and 2b, a heating line power source 21a, 21b which flows a positive current on the line side and a negative current flows on the electrode side. The line 15 is heated by the Joule heat of the current from the heating line power sources 21a and 21b, and the line material 16 has no flowing current. Therefore, the amount of melting of the base material 16 is reduced, and thick-wall welding with low dilution can be performed. Since the base material 16 is fed perpendicularly to the wire 15, the thickness of the thick wall is not directionally stabilized even if thick-wall welding is performed at the same time. Further, thick wall welding for a vertical surface or an inclined surface can also be performed. It is also possible to carry out high fusion using a thick diameter line with a stable thick wall. The heating line current flows from the electrodes 2a, 2b through the nozzles 4a, 4b to the line 15, which is the same as the plasma current, is symmetric with respect to the axis of the torch, and is magnetically balanced, so that it can be shaken without arcing. Or the thick wall welding of the stability of the magnetic blow phenomenon. Other functions and effects are the same as in the first embodiment.

- Fifth embodiment -

Fig. 9 shows a plasma powder thick-wall apparatus which becomes the fifth embodiment. The plasma torch system is provided with a powder guide 26 to replace the plasma powder thick wall torch of the wire member. The other structure is the same as that of the first embodiment, and the embedded wafer 1 is also identical to the configuration of the first embodiment shown in FIG. In the powder guide 26, the powder supply machine 25 feeds the powder in the powder tank 24 at a constant speed. The plasma power sources 17, 18 are connected between the electrodes 2a, 2b and the base material 16, so that a negative plasma arc current flows on the electrode side, and a positive plasma arc current flows on the base material side. Since the base material is vertically conveyed to supply the powder flow, the powder has a good yield and the powder is less likely to adhere to the nozzle, and is formed, compared to the conventional example in which the supply of the powder to the plasma arc is started from the side. The powder passage in the torch becomes thick and becomes a straight line, so it is also possible to use a cutting powder that delivers poor supply. Immediately above the base material 16, the symmetrical plasma arcs merge and collide with each other. Therefore, the downward plasma flow to the base material 16 becomes weak, so that the powder having a low dilution can be thickened. Other functions and effects are the same as in the first embodiment.

- Sixth embodiment -

Fig. 10 shows a plasma keyhole welding device of the sixth embodiment. The plasma torch system is provided with a keyhole gas guide 28 to weld the torch in place of the plasma keyhole of the wire member. The other structure is the same as that of the first embodiment, and the embedded wafer 1 is also identical to the first embodiment shown in FIG. In the same manner as in the first embodiment, the plasma power sources 17, 18 are connected between the electrodes 2a, 2b and the base material 16, so that the negative plasma arc current flows on the electrode side and the positive plasma arc current flows on the base material side. The keyhole gas 27 is Ar or He or Ar+H2 or Ar+O2 or Ar+He. The key hole welding or the low-intensity deep-melting fusion welding of the thick plate can be performed by the keyhole gas guiding member 28 by jetting the keyhole with a small-diameter high-speed gas flow. The gas system for the keyhole is different from the gas for directing the plasma 2a, 2b (plasma gas) Since the other paths are not oxidized and consumed, an oxidizing gas can be used for the gas for the keyhole. Further, since the gas injection hole for the keyhole can have a small diameter irrespective of the magnitude of the plasma current, the keyhole can be reduced, and the thick plate can be welded. Other functions and effects are the same as in the first embodiment.

- Seventh embodiment -

A plasma cutting device which becomes the seventh embodiment is shown in Fig. 1. The plasma torch system is provided with a cutting gas guide 28 instead of the plasma of the wire member to cut the torch. The other structure is the same as that of the first embodiment, and the embedded wafer 1 is also the same as that of the first embodiment shown in FIG. In the same manner as in the first embodiment, the plasma power sources 17, 18 are connected between the electrodes 2a, 2b and the base material 16, so that the negative plasma arc current flows on the electrode side and the positive plasma arc current flows on the base material side. Ar gas cutting system 29 or O ₂ or N ₂ or Ar + H2. The fine width cutting can be performed by jetting the small-diameter high-speed gas flow for cutting with the gas guide 28 for cutting. When the electrodes 2a and 2b are tungsten electrodes, plasma cutting with O ₂ as a cutting gas can be performed without using an expensive crucible electrode. Other functions and effects are the same as in the first embodiment.

- Eighth embodiment -

The plasma welding device of the eighth embodiment is shown in FIG. 12, and only the plasma torch shown in FIG. 12, that is, the plasma arc torch of the eighth embodiment is shown in FIG. (b), showing the front face of the torch. The plasma arc torch of the eighth embodiment is in the form of plasma welding. The embedded wafer 1 is fixed to the insulating stage 9 by clamping the embedded cover 7 to the insulating table 9 with screws. The protective cover 8 is fixed to the insulating table 9 by screwing. The first electrode stage 11 and the second electrode stage 12 which are separated in the x direction by two ratios are located inside the insulator outer case 30. The rod of the insulative housing 14 passes through the space between the first electrode stage 11 and the second electrode stage 12.

In the embedded wafer 1, the ties are distributed on the same diameter line orthogonal to the central axis (z) of the wafer, and the two electrodes are equidistant from the starting point of the central axis. The gaps 1a and 1b are inserted into the insulating substrate 9 and fixed to the front end portions of the first electrode 2a and the second electrode 2b of the electrode pads 11 and 12 by screws 10a and 10b, and the space 1a is disposed in each electrode. The position of the axis of 1b is positioned with the centering stone 3. The nozzles 4 (4a, 4b) connected to the respective electrode arrangement spaces 1a, 1b of the embedded wafer 1 are open to the front end surface of the base material 16.

Figure 14 shows an enlarged view of the embedded wafer 1. The embedded wafer 1 of the present embodiment has two strips which are distributed on the same diameter line orthogonal to the central axis (z) of the wafer 1 and which are equidistant from the central axis and extend parallel to the central axis (z). The electrode arrangement spaces 1a and 1b and the two nozzles 4a and 4b that are connected to the respective spaces 1a and 1b and open to the front end surface of the parent material 16 are opened. The nozzles 4a, 4b, also in this embodiment, are distributed on the same diameter line orthogonal to the central axis (z) of the wafer, parallel to the central axis and thus begin to be equidistant.

The insulating table 9 for the torch has a cooling water flow path, a guide gas flow path, and a protective gas flow path (not shown). The cooling water enters the space between the peripheral surface of the embedded wafer 1 and the inner peripheral surface of the embedded cover 7 through the cooling water supply flow path, thereby starting to flow out of the flare through the cooling water drainage flow path. The pilot gas system enters the electrode arrangement space 1a through the gas flow path and the electrode insertion space, passes through the nozzle 4a at the tip end portion of the electrode, and is ejected from the front end surface of the torch. The guide gas system of the other side enters the electrode arrangement space 1b through the other gas flow path and the electrode insertion space, passes through the nozzle 4b at the tip end portion of the electrode, and is ejected from the front end surface of the torch. The protective gas system enters the cylindrical space between the embedded cover 7 and the protective cover 8 through the protective gas flow path, and is then ejected from the front end surface of the torch.

As shown in Fig. 12, a guiding arc is generated between the electrodes 2a, 2b and the wafer 1 by the pilot power sources 18ap, 18bp, and the negative plasma arc current flows between the electrodes 2a, 2b and the base material 16 and the mother The plasma power source of the positive-plasma arc current flowing on the material side is 18aw (for welding or preheating), 18bw (for welding or formal welding), When a welding arc (plasma arc) is generated, the plasma arc current flows between the electrodes 2a, 2b and the base material 16 to realize a two-hole arc welding of the pit. The welding device shown in Fig. 12 performs welding or preheating by the plasma arc of the electrode 2a and co-fusing or main welding by the electrode 2b. Moreover, the method of welding is performed in the y direction of the arrow. That is, the pool of molten pits formed by the prior welding or preheating, the plasma arc of the co-fusing or the formal welding after the collision, for example, the molten pit pool formed by the bonding of the keyholes is transferred to the rear. The subsequent co-welding system is a molten bead formed by welding a keyhole on average (Fig. 18(c)). Thereby, it is a co-welding which is slidably connected to the surface of the base material as shown in Fig. 18(g). In the state of a thin plate of less than 3 mm, it is impossible to perform keyhole welding. Therefore, the bead shown in Fig. 18(e) is formed by the prior welding or preheating, and the bead is followed by The weld bead shown in Fig. 18 (f) is changed by the joint welding. As is customary, unlike the wide-width welding of a large current single pit pool, the first and second rows are respectively divided into various functions, and the high-speed welding of the narrow width of the bead can be performed with the minimum necessary low current. . Further, even if a preceding arc is used as the preheating and the subsequent arc is used for the final welding, the speed can be increased.

However, the currents (plasma arcs) of the two paths flowing in parallel generate a rotating magnetic flux with the passage as the center, and the magnetic fluxes are between the two passages, which are opposite to the flow direction of the magnetic flux, thereby mutually canceling the magnetic flux. The synthetic magnetic flux surrounds the outside of the two paths. By the magnetic field of the synthetic magnetic flux and the interaction of the respective currents of the two paths (Fleming's left-hand rule) and the two currents (plasma arc), the force F shown in Figure 15 is applied, and the two currents (electricity) The slurry arc is bent in a direction close to each other. Assuming that the arc is unstable and the bending becomes large and mixed with two currents, that is, at the time of joining, the keyhole welding and the co-fusing can not exhibit the characteristics of the attempt at any time. That is, poor welding or poor bead shape occurs. The higher the current, the greater the tendency.

- Ninth Embodiment -

The nozzle wafer 1 of the ninth embodiment is capable of eliminating the possibility of mixing of two currents, and therefore, the nozzles 4a, 4b are inclined in the opposite direction to the opposite direction of the two current bending directions (F). That is, the nozzles 4a, 4b are inclined on the diameter line of the wafer with respect to the vertical line (z) of the wafer end face, in the direction in which the nozzle opening is away from the central axis of the wafer.

Figure 16 shows a single pit-and-two arc welding configuration caused by the plasma arc torch of the ninth embodiment. When the nozzle 4 (4a, 4b) bends the arc by the pulling force F between the arcs, the impact position of the arc with respect to the base material 16 is inclined toward the central axis of the electrodes 2a, 2b to enlarge the θ angle portion and the welding progress direction y The direction of the arc interval is correct or nearly identical to the position of the predetermined key hole welding or co-fusing (the center axis of the electrodes 2a, 2b is mixed at the position of the surface of the base material).

Fig. 17 shows a nozzle wafer 1 of a ninth embodiment of the plasma arc torch of the ninth embodiment shown in Fig. 16. According to the ninth embodiment, the nozzles 4a and 4b are inclined to increase the arc interval in the welding direction y. Therefore, there is no possibility that the two arcs are mixed by the magnetic action (F) of the arc current.

- 10th embodiment -

Figure 19 shows a plasma welding device of the tenth embodiment, and Figure 20 (a) shows only the plasma torch shown in Figure 19, that is, the plasma arc torch of the tenth embodiment, in Figure 20 ( b), showing the front face of the torch. The plasma arc torch of the tenth embodiment is in the form of plasma welding. The embedded wafer 1 is fixed to the insulating stage 9 by clamping the embedded cover 7 to the insulating stage 9 with a screw. The protective cover 8 is fixed to the insulating table 9 by screwing. The head electrode stage 11 is separated from the x-direction before the x-direction, and the intermediate electrode stage 13eb and the rear-end stage electrode stage 12 are located inside the insulator outer case 30. The rod of the insulative housing 14 passes through the intermediate electrode table 13eb and the space between the front end and the rear end electrode stage 11, 12.

In the embedded wafer 1, distributed in the same direction as the central axis (z) of the wafer a head line, a front end electrode arrangement space 1a, 1c, and an intermediate electrode arrangement space 1b at the center axis position are inserted into the through-insulation stage 9 in each electrode arrangement space, and The screws 10a, 10b, and 10c are fixed to the front end portions of the front electrode 2a, the intermediate electrode 2b, and the rear end electrode 2c before the electrode pads 11, 12, and 13, and are positioned at the axial center of each of the electrode arrangement spaces 1a to 1c. 3 Positioning. The nozzles 4 (4a, 4b, 4c) connected to the respective electrode arrangement spaces 1a to 1c of the embedded wafer 1 are open to the front end surface of the base material 16 (welding target material).

Figure 21 shows an enlarged view of the embedded wafer 1. The embedded wafer 1 of the present embodiment includes an intermediate electrode arrangement space 1b which is distributed on the same diameter line orthogonal to the central axis (z) of the wafer 1 and located at the central axis position, and is equidistant from the start position of the central axis. The head, rear end electrode arrangement spaces 1a, 1c are extended in parallel before the central axis (z), and are connected to the respective spaces 1a, 1b, 1c and open to the front, middle, and rear ends before the end faces of the base material 16 Nozzles 4a, 4b, 4c. The nozzles 4a, 4b, 4c are also distributed on the same diameter line orthogonal to the central axis (z) of the wafer in this embodiment, parallel to the central axis and distributed at equal intervals.

The insulating table 9 for the torch is not shown in Fig. 19, but has a guiding gas flow path and a cooling water flow path as shown in Fig. 22. Further, a protective gas flow path (not shown) for guiding the protective gas into the protective cover 8 is provided. As shown in Fig. 22 (a), the pilot gas system enters the electrode arrangement spaces 1a to 1c through the gas flow path and the electrode insertion space, and passes through the nozzles 4a to 4c at the tip end portion of the electrode, and is torched by the torch. The front end is ejected. As shown in FIG. 22(b), the cooling water system enters the space between the peripheral surface of the embedded wafer 1 and the inner peripheral surface of the embedded cover 7 through the cooling water supply flow path, thereby starting cooling. The water drains the flow path and flows out of the torch. The protective gas system enters the cylindrical space between the embedded cover 7 and the protective cover 8 through the protective gas flow path, and is then ejected from the front end surface of the torch.

As shown in FIG. 19, a guiding arc is generated between the electrodes 2a, 2b, 2c and the wafer 1 by the guiding power sources 18ap, 18bp, 18cp, and the electrodes are made between the electrodes 2a, 2b, 2c and the base material 16. A plasma power source 18aw (for preheating), 18bw (for inner bead formation), and 18cw (for common welding) for the side of the negative plasma arc current and the positive plasma arc current flowing on the base material side, to generate a welding arc (electricity) In the case of a slurry arc, a plasma arc current flows between the electrodes 2a, 2b, 2c and the base material 16 to effect arc welding of a pit 3. In the welding device shown in Fig. 19, the preheating by the plasma arc of the electrode 2a is performed, and the inner bead formation by the electrode 2b and the co-existing welding by the electrode 2c are performed. Moreover, the method of welding is performed in the y direction of the arrow. That is, the middle bead formation is such that the surface portion molten pit pool (Fig. 23 (a)) generated by the preheating of the front melts or penetrates to the back surface (bottom surface) of the base material (Fig. 23 ( b)), in the state of a thick plate of 3 mm or more, for example, the molten pit pool formed by the bonding of the keyholes is transferred to the rear, and the subsequent molten fusion bonding system is formed by the fusion of the keyholes. . Thereby, the co-welded bead which is slidably attached to the surface of the base material as shown in Fig. 23(c) is obtained. In the state of a thin plate of less than 3 mm, it is impossible to perform keyhole welding. Therefore, the bead shown in Fig. 23(b) is formed by the preheating of the front and the fusion of the middle, the bead is used by The co-firing of the rear end is changed to become the bead shown in Fig. 23 (c). As is customary, unlike the wide-width welding of a large current single pit pool, the middle and rear end systems are respectively divided into various functions, and the necessary minimum current can be used to carry out the high speed of the bead width. Welding. By the preheating of the front, the fusion in the middle can be easily reached to the back surface of the base material, so that the welding can be performed at a higher speed.

In the embodiment shown in Fig. 19, the preheating by the front electrode 2a reduces the flow rate of the pilot gas to 0.2 to 1.0 (liter/min) for preheating of shallow fusion. In order to form the inner bead by the intermediate electrode 2b and deepen the fusion, the flow rate of the pilot gas is increased to be 0.5 to 5.0 (liter/min), and when the thickness of the base material is 3 mm or more, The inner hole is formed by welding the key hole and guiding the gas with a high flow rate to excavate the base material to penetrate the back surface. When the thickness of the base material is less than 3 mm, it becomes a pilot gas of a lower flow rate, and the inner bead is formed by heat fusion up to the back surface of the base material (Fig. 23 (b)). The surface bead is formed by the rear end electrode 2c, and the flow rate of the pilot gas is reduced to 0.2 to 1.0 (liter/min), and the molten surface is thinned and smoothed by shallow fusion (Fig. 23(c)).

For example, in the embodiment 8 to 10, one of the pits and two arcs can be switched by the condition of the preceding arc current 210A and the trailing arc 210/160A: 30 Hz, and the high speed of 2.3 m/min is relative to the plate thickness of 1.6 mm. The base metal is used for stable high-quality plasma arc welding. On the other hand, in the present embodiment, it is possible to perform 3.0 m/ of the base material having a thickness of 1.6 mm by the conditions of the front arc current 200A, the intermediate arc current 210A, and the rear end arc current 210/160A (45 Hz switching). Min is a more high speed and stable high quality plasma arc welding.

In general, the currents (plasma arcs) of the two paths flowing in parallel generate a rotating magnetic flux with the passage as a center, and the magnetic fluxes are between the two passages, and the flow directions of the magnetic fluxes are opposite. To offset the magnetic flux, the resultant magnetic flux surrounds the outside of the two paths. By the interaction of the magnetic field of the combined magnetic flux and the respective currents of the two paths, the two currents (plasma arcs) are applied, and the Lorentz force F is applied, and the two currents (plasma arcs) are bent in a direction close to each other. . It is assumed that the arc is unstable and the bending becomes large to mix the two currents, that is, when the current is merged, the welding characteristics of the present attempt cannot be exhibited. That is, poor welding or poor bead shape occurs. The higher the current becomes, the higher the tendency is.

However, the tenth embodiment shown in FIG. 19, as shown in FIG. 24, acts as a Lorentz force for pulling the Fa between the arcs of the front electrode 2a and the intermediate electrode 2b, and also at the intermediate electrode 2b and the rear end. The arc between the end electrodes 2c acts as the Lorentz force of the Fc pull, and the arc of the intermediate electrode 2b acts on the resultant force of Fa and Fc. The synthetic force is only to offset the residual of Fa and Fc, and the arc of the intermediate electrode 2b forming the inner bead is stabilized, and the formation of the internal wave (internal bead) is stabilized. The Lorentz force Fa acting on the preheating arc of the front electrode 2a is in the welding progress direction y, and the arc is rocked on the downstream side, and the arc is in the backward direction with respect to the welding direction y, but does not affect the formation of the bead. . The Lorentz force Fc of the co-payment arc applied to the rear end electrode 2c is in the welding progress direction y, and the arc is oscillated on the upstream side, and the arc is advanced in the direction y with respect to the welding, contributing to smoothing. That is, the plasma of the co-payment arc of the rear end electrode 2c flows in the front, and the arc plasma is not scattered in the crater pool behind the arc, so the surface bead becomes a smooth and beautiful bead surface. .

- Eleventh embodiment -

A plasma welding apparatus according to an eleventh embodiment of the present invention, which is suitable for high-speed welding of thick plates, is shown in Fig. 25. When the thickness of the plate is 3 mm or more and the keyhole welding of the pilot gas flow rate is increased, when the welding speed is increased, the molten pit pool caused by the intermediate electrode 2b becomes larger than the welding direction y, and the molten metal is likely to be melted. . Therefore, in the second embodiment, the distance from the front electrode 2a and the intermediate electrode 2b is longer, and the distance between the rear end electrode 2c and the intermediate electrode 2b is longer with respect to the intermediate electrode 2b by the plasma arc of the rear end electrode. The keyhole is welded to form a position where the molten pit pool begins to solidify, and co-fuse is performed. Thereby, even if the keyhole welding speed is increased, the melting of the molten metal can be suppressed. The co-welding system by the rear end electrode 2c reheats the solidified metal to be melted, and the solidified metal starts to solidify immediately after the solidification. Therefore, it is easy to melt and is suitable for high speed.

It is not limited to the plasma arc welding, and even if it is welded by TIG, it can be preheated or co-paid. Since the TIG is fused, no power supply is required, and therefore, the power supply device can be constructed at low cost. Further, since the protective gas system is filled at the lower end of the torch, the guide gas which is ejected to the base material by the electrode arrangement space can be omitted in the TIG welding. Therefore, the embodiments shown in Table 1 below are also implemented.

Embodiment 1 of Table 1 is the first and second embodiments, and any one of the front electrode 2a, the intermediate electrode 2b, and the rear end electrode 2c is subjected to plasma arc welding.

- 12th embodiment -

The plasma welding apparatus according to the twelfth embodiment of the present invention shown in Fig. 26 is the second embodiment in Table 1. That is, the front electrode 2a preheats the base material by TIG welding, and starts to protrude from the opening of the electrode arrangement space of the embedded wafer 1 at the lower end surface thereof, and preheats the molten mother by the TIG arc. The surface of the material. The intermediate electrode 2b and the rear end electrode 2c are the same as those of the first and second embodiments, and the inner bead is formed and co-paid by plasma arc welding.

- 13th embodiment -

The plasma welding apparatus according to the thirteenth embodiment of the present invention shown in Fig. 27 is the third embodiment in Table 1. That is, the front electrode 2a and the rear end electrode 2c are preheated and co-paid by the TIG welding, and the embedded wafer 1 is opened by the opening of the electrode arrangement space of the lower end surface thereof to be more prominent. Below, the surface of the base material is preheated and melted by TIG arcing. The intermediate electrode 2b is the same as the first and second embodiments, and the inner bead is formed by plasma arc welding.

In the fourth embodiment of Table 1, the rear end electrode 2c is co-fed by the TIG welding, and the opening of the electrode arrangement space of the embedded wafer 1 opened at the lower end surface thereof is further protruded downward. TIG arc and co-fired base material surface. The front electrode 2a and the intermediate electrode 2b are the same as the first and second embodiments, and are preheated by the plasma arc welding and formed by the inner bead.

In the fifth embodiment of Table 1, the inner bead is formed by welding the plasma arc of the front electrode 2a. The intermediate electrode 2b and the rear end electrode 2c are respectively formed by surface welding beads by TIG welding. That is, the surface bead is formed by the two stages. The bead is suitable for a base material having a large surface tension of the molten metal of the base material. Further, even in the fourth embodiment, the inner bead can be formed by the plasma arc welding of the front electrode 2a, and the plasma arc welding by the intermediate electrode 2b and the TIG welding by the rear end electrode 2c can be performed. And surface bead is formed separately.

Further, in any of the eleventh to thirteenth embodiments and the embodiment, the intermediate electrode 2b is one piece. However, according to the present invention, two or more intermediate electrodes are also used. However, in this state, all of the electrode systems are also located on a straight line extending in the welding direction. For example, in the embodiment in which the two intermediate electrodes 2b1 and 2b2 are used, the plasma arc welding by the preceding intermediate electrode 2b1 can be used to dig the keyhole caused by one intermediate electrode and cannot penetrate to the back surface of the base material. The thick base material is then welded by the plasma arc caused by the succeeding intermediate electrode 2b2, and the keyhole is welded until the back surface of the base material. In other words, the keyhole can be welded to the thick plate at a high speed.

1‧‧‧ embedded chip

1a, 1b‧‧‧electrode configuration space

1d‧‧‧Expanded

4a‧‧‧ front nozzle

4b‧‧‧Intermediate nozzle

5‧‧‧Central hole

Claims (33)

An embedded wafer, characterized in that the upper end of the wafer has an opening for accommodating the non-consumable electrode, and the opening extends toward the lower end surface of the wafer, and the plurality of electrode arrangement spaces distributed along the diameter line orthogonal to the central axis of the wafer And at least one plasma arc nozzle that is smaller in diameter than the electrode arrangement space and that is open to the electrode arrangement space before the electrode arrangement space reaches the electrode arrangement space and opens below the lower end surface. The embedded wafer according to claim 1, wherein a center hole of the same core is formed from the upper end surface to the lower end surface and concentric with the central axis of the wafer, and the plurality of electrode arrangement spaces are in the center The central axis of the hole is distributed on the circumference of the center at equal angular intervals, and the plasma arc nozzle is distributed on the circumference centered on the central axis as described above, and is distributed in a plurality of equiangular distances. The embedded wafer according to claim 2, wherein the embedded wafer system further has an enlarged opening that is opened to the front end surface of the target hole and is larger than the central hole. The nozzle is attached to the inner side of the front end surface and opened to the enlarged opening. A plasma torch characterized by having an embedded wafer as described in claim 2 or 3, and a wire member for guiding a wire in the central hole of the embedded chip, and the embedded chip Each of the electrode arrangement spaces has a plurality of non-consumable electrodes inserted into the front end portion, a cooling water flow path for cooling the embedded wafer, and a guiding gas flow path for supplying a guiding gas to each electrode arrangement space. A plasma welding device characterized by comprising the plasma torch described in claim 4, and between the plurality of non-consumable electrodes and the processing target, causing a negative plasma arc current to flow on the electrode side and processing the target material side A power source that flows positive plasma arc current. A plasma welding device according to claim 5, wherein Between the wire and the processing target, there is a heating wire power source that flows negative current on the line side and flows positive current on the processing target side. A plasma MIG welding device characterized by comprising the plasma torch described in claim 4, and flowing a positive plasma arc current between the plurality of non-consumable electrodes and the processing target, and processing target The power source of the negative plasma arc current flows on the material side, and the MIG welding power source that flows a positive current on the line side and flows a negative current on the processing target side between the line and the processing target. A plasma line thick-wall device, comprising: a plasma torch according to claim 4, and a negative plasma arc current flowing between the plurality of non-consumable electrodes and the processing target, and processing target A power source for the positive plasma arc current flowing on the material side, and a heating line power source for flowing a positive current on the line side and a negative current on the electrode side between the line and each of the electrodes. A plasma powder thick-walled torch characterized by having the embedded wafer described in claim 2 or 3, and the central hole of the embedded wafer to guide the powder guide of the powder, And a plurality of non-consumable electrodes inserted into the front end portion of the electrode arrangement space of the embedded chip, a cooling water flow path for cooling the embedded chip, and a guiding gas flow path for supplying a guiding gas to each electrode arrangement space. . A plasma powder thick-wall device characterized by having a plasma powder thick-walled torch as described in claim 9 and flowing a negative plasma between the plurality of non-consumable electrodes and the processing target material The electric current of the arc current and the flow of the positive plasma arc current on the processing target side, and the means for supplying the powder to the powder guide described above. A plasma keyhole welding torch, characterized by comprising the embedded wafer described in claim 2 or 3, and a gas guiding member for guiding the keyhole gas in the central hole of the embedded wafer, and Each electrode configuration of the aforementioned embedded wafer The space is a plurality of non-consumable electrodes inserted into the front end portion, a cooling water flow path for cooling the embedded wafer, and a guiding gas flow path for supplying a guiding gas to each electrode arrangement space. A plasma keyhole welding device, characterized in that the plasma keyhole welding torch described in claim 11 is provided, and a negative plasma arc current flows between the plurality of non-consumable electrodes and the processing target material And the power source of the positive plasma arc current flowing on the processing target side. A plasma cutting torch characterized by comprising the embedded wafer described in claim 2 or 3, and a gas guiding member for guiding the cutting gas to the center hole of the embedded wafer, and Each of the electrode arrangement spaces of the embedded wafer is inserted into a plurality of non-consumable electrodes of the front end portion, a cooling water flow path for cooling the embedded wafer, and a guiding gas flow path for supplying a guiding gas to each electrode arrangement space. A plasma cutting device comprising: a plasma cutting torch according to claim 13; and a negative plasma arc current flowing between the plurality of non-consumable electrodes and the processing target A power source that flows positive plasma arc current on the target side. The embedded wafer according to claim 1, wherein the plurality of electrode arrangement spaces are two, and the plasma arc nozzles are distributed on the same diameter line and are respectively connected to the respective electrode arrangement spaces, and are directly opposite to each other. The aforementioned weld line of the diameter wire is opened. The embedded wafer according to claim 15, wherein the plasma arc nozzle is parallel to a vertical line of the lower end surface. The embedded wafer according to claim 15, wherein the plasma arc nozzle is inclined to a direction perpendicular to the central axis of the wafer from the vertical axis of the lower end surface. The embedded wafer according to claim 16 or 17, wherein each electrode arrangement space is parallel to a vertical line of the lower end surface. A plasma torch characterized by comprising the embedded wafer according to any one of claims 15 to 17, and inserting two non-consumable electrodes of each front end portion in each electrode arrangement space of the embedded wafer . A plasma welding device, comprising: a plasma torch according to claim 19; and a first power source for welding or preheating power to a first non-consumable electrode power supply key hole of the plasma torch, and The second non-consumable electrode is supplied with a second power source that is co-fed or officially spliced with electric power. The embedded wafer according to claim 1, wherein the plurality of electrode arrangement spaces include a head electrode arrangement space before one of the welding directions, and one or more intermediate electrode arrangement spaces and a rear end electrode arrangement space. . The embedded wafer according to claim 21, wherein the distance between the plasma arc nozzles connected to the front intermediate electrode arrangement space and the rear end electrode arrangement space is communicated to the front electrode arrangement space and the aforementioned The distance between the aforementioned plasma arc nozzles of the intermediate electrode arrangement space is long. The embedded wafer according to claim 21 or 22, wherein a plasma arc nozzle is connected to each of the electrode wiring spaces. The embedded wafer according to claim 21 or 22, wherein the front electrode arrangement space or the rear end electrode arrangement space is a hole through which the TIG fusion electrode penetrates. The embedded wafer according to claim 21 or 22, wherein the front electrode arrangement space and the rear end electrode arrangement space are holes through which the TIG welding electrode penetrates. An embedded wafer according to claim 21 or 22, wherein The plasma arc nozzle is connected to the front electrode arrangement space, and the intermediate electrode arrangement space and the rear end electrode arrangement space are holes through which the TIG welding electrodes pass. A plasma torch characterized by comprising the embedded wafer described in claim 21, and a plurality of non-consumable electrodes inserted into each of the front end portions in each electrode arrangement space of the embedded wafer. A plasma welding device characterized by comprising the plasma torch described in claim 27, and the first power source for supplying preheating power to the non-consumable electrode before the plasma torch, and non-consumable in the middle The electrode is a second power source that supplies electric power for forming the inner bead, and a third power source that supplies electric power to the non-consumable electrode at the rear end. A plasma welding device, comprising: a plasma torch having a plurality of non-consumable electrodes inserted into each of the front end portions of each of the electrode arrangement spaces of the embedded wafers described in claim 22, and the plasma torch The first non-consumable electrode is a first power source for supplying preheated power, and a second power source for splicing power to the power supply key hole in the middle non-consumable electrode, and a third power source for supplying power to the rear end non-consumable electrode. The plasma welding apparatus according to claim 28 or 29, wherein the first, second, and third power sources are plasma welding power sources. The plasma welding apparatus according to claim 28, wherein the front electrode arrangement space or the rear end electrode arrangement space of the embedded wafer is a hole through which the TIG welding electrode penetrates, the first power source or the third power source The power supply is a TIG fusion power supply, and the other power supply is a plasma fusion power supply. The plasma welding apparatus according to claim 28, wherein the front electrode arrangement space and the rear end electrode arrangement space of the embedded wafer are holes through which the TIG welding electrode penetrates, the first power source and the third Power system The TIG is fused to the power source, and the second power source is a plasma splicing power source. The plasma welding apparatus according to claim 28, wherein the front electrode arrangement space of the embedded wafer is connected to a plasma arc nozzle, and the intermediate electrode arrangement space and the rear end electrode arrangement space TIG The hole through which the electrode is welded is welded, the first power source is a plasma welding power source, and the second and third power sources are TIG welding power sources.