TWI408732B - The epitaxial structure with easy removal of the sacrificial layer and its manufacturing method - Google Patents
The epitaxial structure with easy removal of the sacrificial layer and its manufacturing method Download PDFInfo
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- TWI408732B TWI408732B TW099145518A TW99145518A TWI408732B TW I408732 B TWI408732 B TW I408732B TW 099145518 A TW099145518 A TW 099145518A TW 99145518 A TW99145518 A TW 99145518A TW I408732 B TWI408732 B TW I408732B
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- epitaxial structure
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- 238000004519 manufacturing process Methods 0.000 title description 10
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 12
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 39
- 229910052733 gallium Inorganic materials 0.000 claims description 39
- 239000002131 composite material Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical group 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Description
本發明是有關於一種半導體基板,特別是指一種具易移除犧牲層的磊晶結構的製造方法。
在製作光電元件時所選用適合作為磊晶的基板,往往卻有例如傳熱能力不佳或無導電能力等缺點,因此為了同時兼顧光電元件磊晶層的磊晶品質,在製造磊晶層的過程中,常見的一道製程是將該基板移除剝離,以利磊晶層的性能提昇。
但若選用不恰當的移除剝離工序,將會損及磊晶層的品質與性能,如Ji-Hao Cheng,Yew Chung Sermon Wu,Wei Chih Peng與Hao Ouyang在Journal of The Electrochemical Society,156(8)H640-H643(2009)所揭載的論文內容,可知使用高功率雷射將該基板移除剝離,將使得磊晶層的性能受到不良影響,因此,一種可以保持磊晶層的品質與性能的移除剝離基板的製造方法為目前相關業者的迫切需求。
因此,本發明之目的,即在提供一種可以保持磊晶層的品質與性能的具易移除犧牲層的磊晶結構的製造方法。
本發明之另一目的,即在提供一種可以保持磊晶層的品質與性能的具易移除犧牲層的磊晶結構。
於是,本發明具易移除犧牲層的磊晶結構的製造方法,包含以下步驟:首先,製備一第一基板,接著,於該第一基板上形成一氧化鎵犧牲層,該氧化鎵犧牲層滿足GaOx
,其中0.5≦x≦3.5,而後,於該氧化鎵犧牲層上磊晶成長一磊晶結構層。
本發明具易移除犧牲層的磊晶結構包含一第一基板、一氧化鎵犧牲層,及一磊晶結構層。該氧化鎵犧牲層形成於該第一基板上,該氧化鎵犧牲層滿足GaOx
,其中0.5≦x≦3.5,該磊晶結構層磊晶成長於該氧化鎵犧牲層上。
本發明之功效在於利用移除該氧化鎵犧牲層,將該第一基板與磊晶結構層分離,來保持該磊晶結構層的品質與性能,且該氧化鎵犧牲層滿足GaOx
,結晶特性弱,因此該氧化鎵犧牲層容易被移除,提高製程效率。
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之數個較佳實施例的詳細說明中,將可清楚的呈現。
在本發明被詳細描述之前,要注意的是,在以下的說明內容中,類似的元件是以相同的編號來表示。
參閱圖1,本發明具易移除犧牲層的磊晶結構及其製造方法的一第一較佳實施例,包含以下步驟:
首先,配合參閱圖2,在步驟10中,製備一第一基板2,例如藍寶石基板(Al2
O3
)、矽基板、碳化矽基板等。
接著,配合參閱圖3,步驟11中,於該第一基板2上形成一氧化鎵犧牲層3,該氧化鎵犧牲層3滿足GaOx
,其中0.5≦x≦3.5,該氧化鎵犧牲層3較佳的成長溫度為200℃至700℃間,最佳的成長溫度為400℃。
更進一步說明的是,該氧化鎵犧牲層3結晶特性弱,因此容易被移除,以提高製程效率。
該氧化鎵犧牲層3可以使用有機金屬化學氣相沉積法(MOCVD,Metal-organic Chemical Vapor Deposition)、脈衝激光沉積法(PLD,Pulsed Laser Deposition)等方式形成,以脈衝激光沉積法為例,壓力範圍較佳為0.1至10-4
陶爾(torr),形成速率較佳為每小時0.1至1微米厚度。
而後,配合參閱圖4,步驟12中,於該氧化鎵犧牲層3上磊晶成長一磊晶結構層4(GaN),在本第一較佳實施例中,該磊晶結構層4可以是磊晶薄膜、發光二極體等結構。
該步驟12中,依序包括兩步驟來成長該磊晶結構層4,首先,先以低溫500℃至600℃成長該磊晶結構層4,載流氣體為氮氣且不含有氫氣,接續地提高溫度以高溫700℃至1100℃成長該磊晶結構層4,載流氣體則變換為氮氣與氫氣。
透過低溫、全氮氣的磊晶條件,讓進行步驟12磊晶成長該磊晶結構層4時,不會因氫氣而將該氧化鎵犧牲層3還原為鎵。
而接續地逐漸提高溫度並通入氫氣,透過高溫、含有氫氣的磊晶條件,讓該磊晶結構層4的品質更佳。
而後,配合參閱圖5,在步驟13中,於該磊晶結構層4上接合形成一第二基板5,該第二基板5可視不同需求而採用銅基板、矽基板、鉬基板、軟性基板等。
接著,配合參閱圖6,在步驟14中,通入蝕刻液將該氧化鎵犧牲層3移除,在本第一較佳實施例中,採用氫氟酸(HF)將該氧化鎵犧牲層3移除。
最後,配合參閱圖7,在步驟15中,讓該磊晶結構層4與第一基板2互相分離。
參閱圖8,值得一提的是,在本第一較佳實施例中,也可以將該氧化鎵犧牲層3圖案化,具有複數蝕刻通道31,有助於蝕刻液通入該氧化鎵犧牲層3,以進一步提昇移除該氧化鎵犧牲層3的速率。
參閱圖9,本發明具易移除犧牲層的磊晶結構及其製造方法的第二較佳實施例與該第一較佳實施例構件與製造方式大致相同,不同之處在於該第二較佳實施例中,還包含兩層複合犧牲層6。
其中一複合犧牲層6成長於該第一基板2上後,再將該氧化鎵犧牲層3成長於該複合犧牲層6上,而後再成長另一複合犧牲層6於該氧化鎵犧牲層3上,再將該磊晶結構層4成長於該複合犧牲層6上。
其中,該等複合犧牲層6是選自含氮或含矽,當該等複合犧牲層6含氮時,氮之原子百分比>20%的氮化物,且厚度大於0.001微米,如氮化鎵、氮化銦鎵等,當該等複合犧牲層6含矽時,矽之原子百分比>30%的矽化物,且厚度大於0.001微米,如矽膜、氮化矽等。
在移除該氧化鎵犧牲層3、分離該第一基板2與該磊晶結構層4後,再將該等複合犧牲層6移除。
值得一提的是,在本第二較佳實施例中,也可以僅在該第一基板2與該氧化鎵犧牲層3間設有複合犧牲層6,或是,僅在該氧化鎵犧牲層3與該磊晶結構層4間設有複合犧牲層6,也可以達到相同的效果(圖未示)。若都不包含該等複合犧牲層6,則如第一較佳實施例所述。
綜上所述,本發明移除該氧化鎵犧牲層3,將該第一基板2與磊晶結構層4分離,來保持該磊晶結構層4的品質與性能,優點整理如下:
一、該氧化鎵犧牲層3結晶特性弱,因此容易被移除。
二、磊晶形成該磊晶結構層4時,一開始並無通入氫氣,因此該氧化鎵犧牲層3不會因氫氣而還原為鎵,接續地通入氫氣讓該磊晶結構層4的磊晶品質更佳。
三、將該氧化鎵犧牲層3圖案化,有助於提昇移除速率。
藉此,本發明可以保持磊晶結構層4的品質與性能,並能有效率地移除剝離該第一基板2,故確實能達成本發明之目的。
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。
10...步驟
11...步驟
12...步驟
13...步驟
14...步驟
15...步驟
2...第一基板
3...氧化鎵犧牲層
31...通道
4...磊晶結構層
5...第二基板
6...複合犧牲層
圖1是流程圖,說明本發明具易移除犧牲層的磊晶結構及其製造方法的一第一較佳實施例;
圖2是側視示意圖,說明本第一較佳實施例製備一第一基板;
圖3是側視示意圖,說明本第一較佳實施例形成一氧化鎵犧牲層;
圖4是側視示意圖,說明本第一較佳實施例磊晶成長一磊晶結構層;
圖5是側視示意圖,說明本第一較佳實施例接合形成一第二基板;
圖6是側視示意圖,說明本第一較佳實施例將該氧化鎵犧牲層移除;
圖7是側視示意圖,說明本第一較佳實施例將該磊晶結構層與第一基板互相分離;
圖8是側視示意圖,說明本第一較佳實施例的該氧化鎵犧牲層為圖樣化;及
圖9是側視示意圖,說明本發明具易移除犧牲層的磊晶結構及其製造方法的一第二較佳實施例。
10...步驟
11...步驟
12...步驟
13...步驟
14...步驟
15...步驟
Claims (8)
- 一種具易移除犧牲層的磊晶結構的製造方法,包含以下步驟:(a)製備一第一基板;(b)於該第一基板上形成一氧化鎵犧牲層,該氧化鎵犧牲層滿足GaOx ,其中0.5≦x≦3.5;及(c)於該氧化鎵犧牲層上磊晶成長一磊晶結構層。
- 根據申請專利範圍第1項所述之具易移除犧牲層的磊晶結構的製造方法,還包含一實施於該步驟(b)與(c)間的步驟(b-1),將該氧化鎵犧牲層圖案化。
- 根據申請專利範圍第1項所述之具易移除犧牲層的磊晶結構的製造方法,還包含一實施於該步驟(c)後的步驟(d),於該磊晶結構層上形成一第二基板。
- 根據申請專利範圍第3項所述之具易移除犧牲層的磊晶結構的製造方法,還包含一實施於該步驟(d)後的步驟(e),通入蝕刻液將該氧化鎵犧牲層移除,讓該磊晶結構層與第一基板互相分離。
- 一種具易移除犧牲層的磊晶結構,包含:一第一基板;一氧化鎵犧牲層,形成於該第一基板上,該氧化鎵犧牲層滿足GaOx ,其中0.5≦x≦3.5;及一磊晶結構層,磊晶成長於該氧化鎵犧牲層上。
- 根據申請專利範圍第5項所述之具易移除犧牲層的磊晶結構,其中,該氧化鎵犧牲層為圖案化,具有複數蝕刻通道。
- 根據申請專利範圍第5項所述之具易移除犧牲層的磊晶結構,還包含一位於該氧化鎵犧牲層與第一基板、磊晶結構層其中一者間的複合犧牲層。
- 根據申請專利範圍第7項所述之具易移除犧牲層的磊晶結構,其中,該複合犧牲層是選自氮之原子百分比>20%的氮化物,或矽之原子百分比>30%的矽化物。
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TW099145518A TWI408732B (zh) | 2010-12-23 | 2010-12-23 | The epitaxial structure with easy removal of the sacrificial layer and its manufacturing method |
CN201110428953.4A CN102569028B (zh) | 2010-12-23 | 2011-12-20 | 具易移除牺牲层的磊晶结构及其制造方法 |
US13/331,530 US8680554B2 (en) | 2010-12-23 | 2011-12-20 | Epitaxial structure and method for making the same |
KR1020110139884A KR101354963B1 (ko) | 2010-12-23 | 2011-12-22 | 에피택셜 구조 및 이의 제조 방법 |
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TW200520266A (en) * | 2003-11-21 | 2005-06-16 | Sanken Electric Co Ltd | Semiconductor luminous element and manufacturing method of the same |
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