TWI399402B - 用於晶圓切割之保護膜組成物 - Google Patents

用於晶圓切割之保護膜組成物 Download PDF

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Publication number
TWI399402B
TWI399402B TW98117363A TW98117363A TWI399402B TW I399402 B TWI399402 B TW I399402B TW 98117363 A TW98117363 A TW 98117363A TW 98117363 A TW98117363 A TW 98117363A TW I399402 B TWI399402 B TW I399402B
Authority
TW
Taiwan
Prior art keywords
protective film
water
film composition
group
wafer
Prior art date
Application number
TW98117363A
Other languages
English (en)
Chinese (zh)
Other versions
TW201000550A (en
Inventor
Kyong-Ho Lee
Gi-Jin Kwun
Shi-Jin Sung
Original Assignee
Dongwoo Fine Chem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020080050261A external-priority patent/KR101539763B1/ko
Priority claimed from KR1020080050260A external-priority patent/KR101539762B1/ko
Application filed by Dongwoo Fine Chem Co Ltd filed Critical Dongwoo Fine Chem Co Ltd
Publication of TW201000550A publication Critical patent/TW201000550A/zh
Application granted granted Critical
Publication of TWI399402B publication Critical patent/TWI399402B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/08—Homopolymers or copolymers of acrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L37/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L39/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
    • C08L39/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
    • C08L39/06—Homopolymers or copolymers of N-vinyl-pyrrolidones
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Dicing (AREA)
  • Paints Or Removers (AREA)
TW98117363A 2008-05-29 2009-05-25 用於晶圓切割之保護膜組成物 TWI399402B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080050261A KR101539763B1 (ko) 2008-05-29 2008-05-29 웨이퍼 다이싱용 보호막 조성물
KR1020080050260A KR101539762B1 (ko) 2008-05-29 2008-05-29 웨이퍼 다이싱용 보호막 조성물

Publications (2)

Publication Number Publication Date
TW201000550A TW201000550A (en) 2010-01-01
TWI399402B true TWI399402B (zh) 2013-06-21

Family

ID=41377752

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98117363A TWI399402B (zh) 2008-05-29 2009-05-25 用於晶圓切割之保護膜組成物

Country Status (4)

Country Link
JP (1) JP5511799B2 (ja)
CN (1) CN102077326B (ja)
TW (1) TWI399402B (ja)
WO (1) WO2009145526A2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160092659A (ko) 2015-01-28 2016-08-05 지티에이 일렉트로닉스 컴퍼니 리미티드 레이저 절단용 보호막 조성물 및 그 사용방법

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JP5903228B2 (ja) * 2011-08-30 2016-04-13 東友ファインケム株式会社Ｄｏｎｇｗｏｏ Ｆｉｎｅ−Ｃｈｅｍ Ｃｏ．， Ｌｔｄ． 洗浄剤組成物及びそれを用いた液晶表示装置用アレイ基板の製造方法
JP5757848B2 (ja) * 2011-10-31 2015-08-05 東京応化工業株式会社 水溶性塗布膜材料、水溶性塗布膜材料の粘度調整方法、及び水溶性塗布膜材料用粘度調整剤
US9586291B2 (en) 2012-11-28 2017-03-07 Globalfoundries Inc Adhesives for bonding handler wafers to device wafers and enabling mid-wavelength infrared laser ablation release
US20140144593A1 (en) 2012-11-28 2014-05-29 International Business Machiness Corporation Wafer debonding using long-wavelength infrared radiation ablation
JP5946401B2 (ja) * 2012-12-07 2016-07-06 株式会社ディスコ 保護膜の被覆方法
TWI610374B (zh) 2013-08-01 2018-01-01 格芯公司 用於將搬運器晶圓接合至元件晶圓以及能以中段波長紅外光雷射燒蝕釋出之接著劑
CN105489472B (zh) * 2014-09-16 2019-03-15 长春石油化学股份有限公司 前切割保护液及使用此保护液的晶片加工方法
TW201616559A (zh) * 2014-10-28 2016-05-01 Gta Electronics Co Ltd 雷射切割用保護膜組成物及應用
CN105778644B (zh) * 2014-12-15 2019-01-29 碁達科技股份有限公司 雷射切割用保护膜组成物及应用
JP2017082172A (ja) * 2015-10-30 2017-05-18 日本合成化学工業株式会社 成形品
JP6533149B2 (ja) * 2015-11-18 2019-06-19 日本酢ビ・ポバール株式会社 半導体レーザーダイシング用保護剤及びそれを用いた半導体の製造方法
JP6533150B2 (ja) * 2015-11-18 2019-06-19 日本酢ビ・ポバール株式会社 半導体レーザーダイシング用保護剤及びそれを用いた半導体の製造方法
CN108690421A (zh) * 2017-03-09 2018-10-23 深圳怡钛积科技股份有限公司 高热稳定性的激光切割保护膜组成物
WO2019117302A1 (ja) * 2017-12-15 2019-06-20 株式会社Ｄｎｐファインケミカル 水系仮止め接着剤及び水系仮止め接着剤の製造方法、並びに該水系仮止め接着剤を用いた各種部材又は部品の製造方法
CN111630117B (zh) * 2018-01-19 2023-04-04 Mti株式会社 用于剥离切割工艺用保护性涂层剂的剥离剂
JP6862028B2 (ja) * 2018-01-19 2021-04-21 エムティーアイ カンパニー, リミテッドMti Co., Ltd. ダイシング工程用保護コーティング剤
JP7161370B2 (ja) * 2018-10-23 2022-10-26 日本酢ビ・ポバール株式会社 保護膜形成用組成物
KR20210090633A (ko) * 2018-11-15 2021-07-20 도오꾜오까고오교 가부시끼가이샤 플라즈마 다이싱용 보호막 형성제, 및 반도체 칩의 제조 방법
EP3931272A4 (en) * 2019-02-27 2022-12-28 John Cleaon Moore WATER-CLEAN THERMAL AND PLASMA-RESISTANT COATING FOR LASER INTERACTIVE APPLICATIONS
US11164903B2 (en) * 2019-05-24 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with pad structure
CN111662675B (zh) * 2020-06-19 2021-10-22 西北工业大学深圳研究院 具有自愈合功能的壁画、彩绘类文物加固剂及制备方法
JPWO2023058577A1 (ja) * 2021-10-05 2023-04-13
CN114015312B (zh) * 2021-10-26 2022-06-24 大连奥首科技有限公司 一种凸块晶圆的激光切割保护材料及其制备方法与用途
WO2023164546A1 (en) * 2022-02-25 2023-08-31 Applied Materials, Inc. Inkjet inks for deposition and removal in a laser dicing process

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1612238A1 (en) * 2003-03-25 2006-01-04 Teijin Dupont Films Japan Limited Antistatic layered polyester film
US20060105544A1 (en) * 2004-11-12 2006-05-18 Tokyo Ohka Kogyo Co., Ltd. Protective film agent for laser dicing and wafer processing method using the protective film agent

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6023094A (en) * 1998-01-14 2000-02-08 National Semiconductor Corporation Semiconductor wafer having a bottom surface protective coating
JP4642436B2 (ja) * 2004-11-12 2011-03-02 リンテック株式会社 マーキング方法および保護膜形成兼ダイシング用シート

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1612238A1 (en) * 2003-03-25 2006-01-04 Teijin Dupont Films Japan Limited Antistatic layered polyester film
US20060105544A1 (en) * 2004-11-12 2006-05-18 Tokyo Ohka Kogyo Co., Ltd. Protective film agent for laser dicing and wafer processing method using the protective film agent

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160092659A (ko) 2015-01-28 2016-08-05 지티에이 일렉트로닉스 컴퍼니 리미티드 레이저 절단용 보호막 조성물 및 그 사용방법

Also Published As

Publication number Publication date
JP2011522411A (ja) 2011-07-28
WO2009145526A3 (en) 2010-03-04
TW201000550A (en) 2010-01-01
CN102077326A (zh) 2011-05-25
CN102077326B (zh) 2014-04-16
JP5511799B2 (ja) 2014-06-04
WO2009145526A2 (en) 2009-12-03

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