CN102077326B - 用于晶片切割的保护膜组合物 - Google Patents

用于晶片切割的保护膜组合物 Download PDF

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Publication number
CN102077326B
CN102077326B CN200980125936.4A CN200980125936A CN102077326B CN 102077326 B CN102077326 B CN 102077326B CN 200980125936 A CN200980125936 A CN 200980125936A CN 102077326 B CN102077326 B CN 102077326B
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water
diaphragm
composition
group
resin
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CN200980125936.4A
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Chinese (zh)
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CN102077326A (zh
Inventor
李京浩
权基真
成始震
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Dongwoo Fine Chem Co Ltd
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Dongwoo Fine Chem Co Ltd
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Priority claimed from KR1020080050260A external-priority patent/KR101539762B1/ko
Priority claimed from KR1020080050261A external-priority patent/KR101539763B1/ko
Application filed by Dongwoo Fine Chem Co Ltd filed Critical Dongwoo Fine Chem Co Ltd
Publication of CN102077326A publication Critical patent/CN102077326A/zh
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/08—Homopolymers or copolymers of acrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L37/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L39/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
    • C08L39/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
    • C08L39/06—Homopolymers or copolymers of N-vinyl-pyrrolidones
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
  • Dicing (AREA)
CN200980125936.4A 2008-05-29 2009-05-22 用于晶片切割的保护膜组合物 Active CN102077326B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10-2008-0050260 2008-05-29
KR1020080050260A KR101539762B1 (ko) 2008-05-29 2008-05-29 웨이퍼 다이싱용 보호막 조성물
KR10-2008-0050261 2008-05-29
KR1020080050261A KR101539763B1 (ko) 2008-05-29 2008-05-29 웨이퍼 다이싱용 보호막 조성물
PCT/KR2009/002727 WO2009145526A2 (en) 2008-05-29 2009-05-22 Protective film composition for wafer dicing

Publications (2)

Publication Number Publication Date
CN102077326A CN102077326A (zh) 2011-05-25
CN102077326B true CN102077326B (zh) 2014-04-16

Family

ID=41377752

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980125936.4A Active CN102077326B (zh) 2008-05-29 2009-05-22 用于晶片切割的保护膜组合物

Country Status (4)

Country Link
JP (1) JP5511799B2 (ja)
CN (1) CN102077326B (ja)
TW (1) TWI399402B (ja)
WO (1) WO2009145526A2 (ja)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5903228B2 (ja) * 2011-08-30 2016-04-13 東友ファインケム株式会社Ｄｏｎｇｗｏｏ Ｆｉｎｅ−Ｃｈｅｍ Ｃｏ．， Ｌｔｄ． 洗浄剤組成物及びそれを用いた液晶表示装置用アレイ基板の製造方法
JP5757848B2 (ja) * 2011-10-31 2015-08-05 東京応化工業株式会社 水溶性塗布膜材料、水溶性塗布膜材料の粘度調整方法、及び水溶性塗布膜材料用粘度調整剤
US9586291B2 (en) 2012-11-28 2017-03-07 Globalfoundries Inc Adhesives for bonding handler wafers to device wafers and enabling mid-wavelength infrared laser ablation release
US20140144593A1 (en) 2012-11-28 2014-05-29 International Business Machiness Corporation Wafer debonding using long-wavelength infrared radiation ablation
JP5946401B2 (ja) * 2012-12-07 2016-07-06 株式会社ディスコ 保護膜の被覆方法
TWI610374B (zh) 2013-08-01 2018-01-01 格芯公司 用於將搬運器晶圓接合至元件晶圓以及能以中段波長紅外光雷射燒蝕釋出之接著劑
CN105489472B (zh) * 2014-09-16 2019-03-15 长春石油化学股份有限公司 前切割保护液及使用此保护液的晶片加工方法
TW201616559A (zh) * 2014-10-28 2016-05-01 Gta Electronics Co Ltd 雷射切割用保護膜組成物及應用
CN105778644B (zh) * 2014-12-15 2019-01-29 碁達科技股份有限公司 雷射切割用保护膜组成物及应用
KR20160092659A (ko) 2015-01-28 2016-08-05 지티에이 일렉트로닉스 컴퍼니 리미티드 레이저 절단용 보호막 조성물 및 그 사용방법
JP2017082172A (ja) * 2015-10-30 2017-05-18 日本合成化学工業株式会社 成形品
JP6533150B2 (ja) * 2015-11-18 2019-06-19 日本酢ビ・ポバール株式会社 半導体レーザーダイシング用保護剤及びそれを用いた半導体の製造方法
JP6533149B2 (ja) * 2015-11-18 2019-06-19 日本酢ビ・ポバール株式会社 半導体レーザーダイシング用保護剤及びそれを用いた半導体の製造方法
CN108690421A (zh) * 2017-03-09 2018-10-23 深圳怡钛积科技股份有限公司 高热稳定性的激光切割保护膜组成物
CN111328340B (zh) * 2017-12-15 2022-07-01 Dnp精细化工股份有限公司 水系临时固定粘接剂和水系临时固定粘接剂的制造方法、以及使用了该水系临时固定粘接剂的各种构件或部件的制造方法
TWI711675B (zh) * 2018-01-19 2020-12-01 南韓商Ｍｔｉ股份有限公司 切片工藝用保護性塗層劑
TWI677543B (zh) * 2018-01-19 2019-11-21 南韓商Ｍｔｉ股份有限公司 切片工藝用保護性塗層劑的剝離劑
JP7161370B2 (ja) * 2018-10-23 2022-10-26 日本酢ビ・ポバール株式会社 保護膜形成用組成物
US11929284B2 (en) * 2018-11-15 2024-03-12 Tokyo Ohka Kogyo Co., Ltd. Protective film forming agent for plasma dicing and method for manufacturing semiconductor chip
IL285846B1 (en) * 2019-02-27 2024-07-01 John Cleaon Moore Heat and plasma resistant and water cleanable coating for laser interactive applications
US11164903B2 (en) * 2019-05-24 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with pad structure
CN111662675B (zh) * 2020-06-19 2021-10-22 西北工业大学深圳研究院 具有自愈合功能的壁画、彩绘类文物加固剂及制备方法
WO2023058577A1 (ja) * 2021-10-05 2023-04-13 日東電工株式会社 保護シート、電子部品の製造方法、及び、表示装置の表示面を構成するガラス片の製造方法
CN114015312B (zh) * 2021-10-26 2022-06-24 大连奥首科技有限公司 一种凸块晶圆的激光切割保护材料及其制备方法与用途
WO2023164546A1 (en) * 2022-02-25 2023-08-31 Applied Materials, Inc. Inkjet inks for deposition and removal in a laser dicing process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1800258A (zh) * 2004-11-12 2006-07-12 东京应化工业株式会社 用于激光割片的保护膜剂和使用保护膜剂的晶片加工方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6023094A (en) * 1998-01-14 2000-02-08 National Semiconductor Corporation Semiconductor wafer having a bottom surface protective coating
WO2004085524A1 (ja) * 2003-03-25 2004-10-07 Teijin Dupont Films Japan Limited 帯電防止性積層ポリエステルフィルム
JP4642436B2 (ja) * 2004-11-12 2011-03-02 リンテック株式会社 マーキング方法および保護膜形成兼ダイシング用シート

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1800258A (zh) * 2004-11-12 2006-07-12 东京应化工业株式会社 用于激光割片的保护膜剂和使用保护膜剂的晶片加工方法

Also Published As

Publication number Publication date
JP2011522411A (ja) 2011-07-28
CN102077326A (zh) 2011-05-25
TW201000550A (en) 2010-01-01
JP5511799B2 (ja) 2014-06-04
WO2009145526A2 (en) 2009-12-03
WO2009145526A3 (en) 2010-03-04
TWI399402B (zh) 2013-06-21

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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GR01 Patent grant
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Owner name: TONGWOO FINE CHEMICALS CO., LTD.

Free format text: FORMER NAME: DONGWOO FINE-CHEM CO., LTD.

CP03 Change of name, title or address

Address after: Jeonbuk, South Korea

Patentee after: Tongwoo Fine Chemicals Co., Ltd.

Address before: Seoul special city

Patentee before: Dongwoo Fine Chem Co Ltd