TWI397097B - 離子植入機及減少離子束雜訊之影響的方法 - Google Patents

離子植入機及減少離子束雜訊之影響的方法 Download PDF

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Publication number
TWI397097B
TWI397097B TW096120687A TW96120687A TWI397097B TW I397097 B TWI397097 B TW I397097B TW 096120687 A TW096120687 A TW 096120687A TW 96120687 A TW96120687 A TW 96120687A TW I397097 B TWI397097 B TW I397097B
Authority
TW
Taiwan
Prior art keywords
ion beam
workpiece
ion
scanner
scan
Prior art date
Application number
TW096120687A
Other languages
English (en)
Chinese (zh)
Other versions
TW200802492A (en
Inventor
Joseph P Dzengeleski
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW200802492A publication Critical patent/TW200802492A/zh
Application granted granted Critical
Publication of TWI397097B publication Critical patent/TWI397097B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
TW096120687A 2006-06-23 2007-06-08 離子植入機及減少離子束雜訊之影響的方法 TWI397097B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/473,860 US7498590B2 (en) 2006-06-23 2006-06-23 Scan pattern for an ion implanter

Publications (2)

Publication Number Publication Date
TW200802492A TW200802492A (en) 2008-01-01
TWI397097B true TWI397097B (zh) 2013-05-21

Family

ID=38846168

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096120687A TWI397097B (zh) 2006-06-23 2007-06-08 離子植入機及減少離子束雜訊之影響的方法

Country Status (6)

Country Link
US (1) US7498590B2 (enExample)
JP (1) JP5109209B2 (enExample)
KR (1) KR101365103B1 (enExample)
CN (1) CN101461028B (enExample)
TW (1) TWI397097B (enExample)
WO (1) WO2008002403A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008003526A2 (en) * 2006-07-06 2008-01-10 Ion Beam Applications S.A. Method and software for irradiating a target volume with a particle beam and device implementing same
EP2228817B1 (en) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Global point spreading function in multi-beam patterning
US9147554B2 (en) * 2009-07-02 2015-09-29 Axcelis Technologies, Inc. Use of beam scanning to improve uniformity and productivity of a 2D mechanical scan implantation system
CH701762A2 (de) * 2009-09-14 2011-03-15 Markus R Mueller Verfahren und Vorrichtung zum Herstellen von beliebigen Produkten mit gewünschten Eigenschaften durch computergesteuertes Zusammensetzen von Atomen und/oder Molekülen.
US8378313B2 (en) * 2011-03-31 2013-02-19 Axcelis Technologies, Inc. Uniformity of a scanned ion beam
US8421039B2 (en) 2011-03-31 2013-04-16 Axcelis Technologies, Inc. Method and apparatus for improved uniformity control with dynamic beam shaping
US9340870B2 (en) 2013-01-25 2016-05-17 Advanced Ion Beam Technology, Inc. Magnetic field fluctuation for beam smoothing
US9190248B2 (en) * 2013-09-07 2015-11-17 Varian Semiconductor Equipment Associates, Inc. Dynamic electrode plasma system
US9612534B2 (en) 2015-03-31 2017-04-04 Tokyo Electron Limited Exposure dose homogenization through rotation, translation, and variable processing conditions
WO2016160301A1 (en) * 2015-03-31 2016-10-06 Tokyo Electron Limited Exposure dose homogenization through rotation, translation, and variable processing conditions
US10657737B2 (en) 2017-10-23 2020-05-19 Toyota Motor Engineering & Manufacturing North America, Inc. Vehicle error identification system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1306879A2 (en) * 2001-10-26 2003-05-02 Nissin Electric Co., Ltd. Ion implanting method and apparatus
US20060076510A1 (en) * 2004-10-07 2006-04-13 Shengwu Chang Ion beam implant current, spot width and position tuning
TW200618078A (en) * 2004-11-30 2006-06-01 Axcelis Tech Inc Optimization of beam utilization

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4449051A (en) * 1982-02-16 1984-05-15 Varian Associates, Inc. Dose compensation by differential pattern scanning
US4980562A (en) 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
US4736107A (en) * 1986-09-24 1988-04-05 Eaton Corporation Ion beam implanter scan control system
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
JP3341749B2 (ja) * 1999-12-28 2002-11-05 日新電機株式会社 イオン注入方法およびイオン注入装置
EP1285456A2 (en) * 2000-05-15 2003-02-26 Varian Semiconductor Equipment Associates Inc. High efficiency scanning in ion implanters
US6903350B1 (en) * 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US7589333B2 (en) * 2006-09-29 2009-09-15 Axcelis Technologies, Inc. Methods for rapidly switching off an ion beam

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1306879A2 (en) * 2001-10-26 2003-05-02 Nissin Electric Co., Ltd. Ion implanting method and apparatus
US20060076510A1 (en) * 2004-10-07 2006-04-13 Shengwu Chang Ion beam implant current, spot width and position tuning
TW200618078A (en) * 2004-11-30 2006-06-01 Axcelis Tech Inc Optimization of beam utilization

Also Published As

Publication number Publication date
CN101461028A (zh) 2009-06-17
US20080073575A1 (en) 2008-03-27
JP2009541935A (ja) 2009-11-26
KR101365103B1 (ko) 2014-02-26
KR20090024239A (ko) 2009-03-06
WO2008002403A3 (en) 2008-04-03
WO2008002403A2 (en) 2008-01-03
JP5109209B2 (ja) 2012-12-26
TW200802492A (en) 2008-01-01
US7498590B2 (en) 2009-03-03
CN101461028B (zh) 2010-09-29

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