CN101461028B - 离子植入机的扫描图案 - Google Patents

离子植入机的扫描图案 Download PDF

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Publication number
CN101461028B
CN101461028B CN2007800208224A CN200780020822A CN101461028B CN 101461028 B CN101461028 B CN 101461028B CN 2007800208224 A CN2007800208224 A CN 2007800208224A CN 200780020822 A CN200780020822 A CN 200780020822A CN 101461028 B CN101461028 B CN 101461028B
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CN
China
Prior art keywords
ion beam
workpiece
ion
scanner
front surface
Prior art date
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CN2007800208224A
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English (en)
Chinese (zh)
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CN101461028A (zh
Inventor
约瑟·P·迪宰桔雷斯契
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN101461028A publication Critical patent/CN101461028A/zh
Application granted granted Critical
Publication of CN101461028B publication Critical patent/CN101461028B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
CN2007800208224A 2006-06-23 2007-06-14 离子植入机的扫描图案 Active CN101461028B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/473,860 2006-06-23
US11/473,860 US7498590B2 (en) 2006-06-23 2006-06-23 Scan pattern for an ion implanter
PCT/US2007/014008 WO2008002403A2 (en) 2006-06-23 2007-06-14 Scan pattern for an ion implanter

Publications (2)

Publication Number Publication Date
CN101461028A CN101461028A (zh) 2009-06-17
CN101461028B true CN101461028B (zh) 2010-09-29

Family

ID=38846168

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800208224A Active CN101461028B (zh) 2006-06-23 2007-06-14 离子植入机的扫描图案

Country Status (6)

Country Link
US (1) US7498590B2 (enExample)
JP (1) JP5109209B2 (enExample)
KR (1) KR101365103B1 (enExample)
CN (1) CN101461028B (enExample)
TW (1) TWI397097B (enExample)
WO (1) WO2008002403A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008003526A2 (en) * 2006-07-06 2008-01-10 Ion Beam Applications S.A. Method and software for irradiating a target volume with a particle beam and device implementing same
EP2228817B1 (en) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Global point spreading function in multi-beam patterning
US9147554B2 (en) * 2009-07-02 2015-09-29 Axcelis Technologies, Inc. Use of beam scanning to improve uniformity and productivity of a 2D mechanical scan implantation system
CH701762A2 (de) * 2009-09-14 2011-03-15 Markus R Mueller Verfahren und Vorrichtung zum Herstellen von beliebigen Produkten mit gewünschten Eigenschaften durch computergesteuertes Zusammensetzen von Atomen und/oder Molekülen.
US8378313B2 (en) * 2011-03-31 2013-02-19 Axcelis Technologies, Inc. Uniformity of a scanned ion beam
US8421039B2 (en) 2011-03-31 2013-04-16 Axcelis Technologies, Inc. Method and apparatus for improved uniformity control with dynamic beam shaping
US9340870B2 (en) 2013-01-25 2016-05-17 Advanced Ion Beam Technology, Inc. Magnetic field fluctuation for beam smoothing
US9190248B2 (en) * 2013-09-07 2015-11-17 Varian Semiconductor Equipment Associates, Inc. Dynamic electrode plasma system
US9612534B2 (en) 2015-03-31 2017-04-04 Tokyo Electron Limited Exposure dose homogenization through rotation, translation, and variable processing conditions
WO2016160301A1 (en) * 2015-03-31 2016-10-06 Tokyo Electron Limited Exposure dose homogenization through rotation, translation, and variable processing conditions
US10657737B2 (en) 2017-10-23 2020-05-19 Toyota Motor Engineering & Manufacturing North America, Inc. Vehicle error identification system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4449051A (en) * 1982-02-16 1984-05-15 Varian Associates, Inc. Dose compensation by differential pattern scanning
CN1134819C (zh) * 1999-12-28 2004-01-14 日新电机株式会社 离子注入方法和离子注入设备
CN1256751C (zh) * 2000-05-15 2006-05-17 瓦里安半导体设备联合公司 离子注入机中的高效率扫描

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980562A (en) 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
US4736107A (en) * 1986-09-24 1988-04-05 Eaton Corporation Ion beam implanter scan control system
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
JP3692999B2 (ja) 2001-10-26 2005-09-07 日新イオン機器株式会社 イオン注入方法およびその装置
US6903350B1 (en) * 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US7442944B2 (en) * 2004-10-07 2008-10-28 Varian Semiconductor Equipment Associates, Inc. Ion beam implant current, spot width and position tuning
US20060113489A1 (en) * 2004-11-30 2006-06-01 Axcelis Technologies, Inc. Optimization of beam utilization
US7589333B2 (en) * 2006-09-29 2009-09-15 Axcelis Technologies, Inc. Methods for rapidly switching off an ion beam

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4449051A (en) * 1982-02-16 1984-05-15 Varian Associates, Inc. Dose compensation by differential pattern scanning
CN1134819C (zh) * 1999-12-28 2004-01-14 日新电机株式会社 离子注入方法和离子注入设备
CN1256751C (zh) * 2000-05-15 2006-05-17 瓦里安半导体设备联合公司 离子注入机中的高效率扫描

Also Published As

Publication number Publication date
CN101461028A (zh) 2009-06-17
US20080073575A1 (en) 2008-03-27
JP2009541935A (ja) 2009-11-26
KR101365103B1 (ko) 2014-02-26
KR20090024239A (ko) 2009-03-06
WO2008002403A3 (en) 2008-04-03
WO2008002403A2 (en) 2008-01-03
JP5109209B2 (ja) 2012-12-26
TWI397097B (zh) 2013-05-21
TW200802492A (en) 2008-01-01
US7498590B2 (en) 2009-03-03

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