TWI396939B - 含縮醛及縮酮作為溶劑之光阻組合物 - Google Patents

含縮醛及縮酮作為溶劑之光阻組合物 Download PDF

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Publication number
TWI396939B
TWI396939B TW098131968A TW98131968A TWI396939B TW I396939 B TWI396939 B TW I396939B TW 098131968 A TW098131968 A TW 098131968A TW 98131968 A TW98131968 A TW 98131968A TW I396939 B TWI396939 B TW I396939B
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TW
Taiwan
Prior art keywords
photoresist
solvent
photoresist composition
bis
substrate
Prior art date
Application number
TW098131968A
Other languages
English (en)
Chinese (zh)
Other versions
TW201005441A (en
Inventor
史丹利Ｆ 瓦那
喬瑟夫Ｅ 奧伯蘭得
羅勃特Ｒ 佩勒斯
道格拉斯 麥肯茲
莊弘
Original Assignee
克來里恩國際公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 克來里恩國際公司 filed Critical 克來里恩國際公司
Publication of TW201005441A publication Critical patent/TW201005441A/zh
Application granted granted Critical
Publication of TWI396939B publication Critical patent/TWI396939B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW098131968A 2002-04-11 2003-04-10 含縮醛及縮酮作為溶劑之光阻組合物 TWI396939B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/120,952 US6911293B2 (en) 2002-04-11 2002-04-11 Photoresist compositions comprising acetals and ketals as solvents

Publications (2)

Publication Number Publication Date
TW201005441A TW201005441A (en) 2010-02-01
TWI396939B true TWI396939B (zh) 2013-05-21

Family

ID=28790215

Family Applications (2)

Application Number Title Priority Date Filing Date
TW098131968A TWI396939B (zh) 2002-04-11 2003-04-10 含縮醛及縮酮作為溶劑之光阻組合物
TW092108231A TWI318330B (en) 2002-04-11 2003-04-10 Photoresist compositions comprising acetals and ketals as solvents

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW092108231A TWI318330B (en) 2002-04-11 2003-04-10 Photoresist compositions comprising acetals and ketals as solvents

Country Status (7)

Country Link
US (1) US6911293B2 (https=)
EP (1) EP1497697B1 (https=)
JP (1) JP4359151B2 (https=)
KR (1) KR100869085B1 (https=)
CN (2) CN102520583B (https=)
TW (2) TWI396939B (https=)
WO (1) WO2003085455A2 (https=)

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US7108958B2 (en) * 2002-07-31 2006-09-19 Brewer Science Inc. Photosensitive bottom anti-reflective coatings
US7364835B2 (en) * 2003-10-15 2008-04-29 Brewer Science Inc. Developer-soluble materials and methods of using the same in via-first dual damascene applications
JP4440600B2 (ja) * 2003-10-31 2010-03-24 Ａｚエレクトロニックマテリアルズ株式会社 厚膜および超厚膜対応化学増幅型感光性樹脂組成物
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
DE102006006022A1 (de) * 2006-02-08 2007-08-09 Clariant International Limited Verfahren zur Reinigung von Metallteilen
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
US20080096785A1 (en) * 2006-10-19 2008-04-24 Air Products And Chemicals, Inc. Stripper Containing an Acetal or Ketal for Removing Post-Etched Photo-Resist, Etch Polymer and Residue
FR2912414B1 (fr) * 2007-02-13 2012-09-28 Imaje Sa Composition d'encre pour l'impression par jet d'encre.
US7709178B2 (en) * 2007-04-17 2010-05-04 Brewer Science Inc. Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride
US8133659B2 (en) 2008-01-29 2012-03-13 Brewer Science Inc. On-track process for patterning hardmask by multiple dark field exposures
TWI450052B (zh) * 2008-06-24 2014-08-21 黛納羅伊有限責任公司 用於後段製程操作有效之剝離溶液
US20100151118A1 (en) * 2008-12-17 2010-06-17 Eastman Chemical Company Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
JP5329999B2 (ja) * 2009-01-29 2013-10-30 ＡｚエレクトロニックマテリアルズＩｐ株式会社 パターン形成方法
KR101677058B1 (ko) * 2009-10-13 2016-11-18 금호석유화학 주식회사 폴리아세탈 수지, 그 합성 방법 및 포토레지스트 조성물
TWI539493B (zh) 2010-03-08 2016-06-21 黛納羅伊有限責任公司 用於摻雜具有分子單層之矽基材之方法及組合物
US8987181B2 (en) 2011-11-08 2015-03-24 Dynaloy, Llc Photoresist and post etch residue cleaning solution
US8853438B2 (en) 2012-11-05 2014-10-07 Dynaloy, Llc Formulations of solutions and processes for forming a substrate including an arsenic dopant
US20140240645A1 (en) * 2013-02-27 2014-08-28 Samsung Display Co., Ltd. Photosensitive resin composition, display device using the same and method of manufacturing the display device
US9587136B2 (en) 2013-10-08 2017-03-07 Wisconsin Alumni Research Foundation Block copolymers with high Flory-Huggins interaction parameters for block copolymer lithography
KR102093677B1 (ko) * 2015-11-05 2020-03-26 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
KR102475604B1 (ko) * 2016-08-25 2022-12-08 동우 화인켐 주식회사 착색 감광성 수지 조성물, 이를 이용하여 제조된 컬러필터 및 화상표시장치
US20220365432A1 (en) * 2019-11-25 2022-11-17 Merck Patent Gmbh Chemically amplified photoresist
CN116256945B (zh) * 2023-03-15 2026-02-10 物元半导体技术(青岛)有限公司 光刻胶材料及其应用

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Also Published As

Publication number Publication date
TWI318330B (en) 2009-12-11
WO2003085455A2 (en) 2003-10-16
KR20040105238A (ko) 2004-12-14
JP2005526989A (ja) 2005-09-08
TW201005441A (en) 2010-02-01
JP4359151B2 (ja) 2009-11-04
US20030194636A1 (en) 2003-10-16
WO2003085455A3 (en) 2004-05-21
KR100869085B1 (ko) 2008-11-18
CN102520583A (zh) 2012-06-27
EP1497697B1 (en) 2012-08-08
TW200405127A (en) 2004-04-01
EP1497697A2 (en) 2005-01-19
US6911293B2 (en) 2005-06-28
CN1650232A (zh) 2005-08-03
CN102520583B (zh) 2014-05-07

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