TWI396224B - 用於測量及偵測光學發射以及決定氣體原子相對濃度之方法及裝置 - Google Patents
用於測量及偵測光學發射以及決定氣體原子相對濃度之方法及裝置 Download PDFInfo
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- TWI396224B TWI396224B TW097129918A TW97129918A TWI396224B TW I396224 B TWI396224 B TW I396224B TW 097129918 A TW097129918 A TW 097129918A TW 97129918 A TW97129918 A TW 97129918A TW I396224 B TWI396224 B TW I396224B
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- Prior art keywords
- plasma
- gas
- emission
- power
- chamber
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 106
- 230000003287 optical effect Effects 0.000 title claims description 38
- 210000002381 plasma Anatomy 0.000 claims description 136
- 239000007789 gas Substances 0.000 claims description 105
- 230000008569 process Effects 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 38
- 238000012545 processing Methods 0.000 claims description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 25
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 24
- 229910052732 germanium Inorganic materials 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 238000001020 plasma etching Methods 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 7
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 5
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910021398 atomic carbon Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 238000005070 sampling Methods 0.000 claims description 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 2
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 238000001228 spectrum Methods 0.000 description 41
- 239000000203 mixture Substances 0.000 description 38
- 125000004429 atom Chemical group 0.000 description 34
- 239000012634 fragment Substances 0.000 description 26
- 238000000295 emission spectrum Methods 0.000 description 24
- 239000000463 material Substances 0.000 description 12
- 238000012544 monitoring process Methods 0.000 description 12
- 238000001514 detection method Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000008901 benefit Effects 0.000 description 8
- 239000000470 constituent Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 6
- 238000005108 dry cleaning Methods 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012806 monitoring device Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 238000012306 spectroscopic technique Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum Chemical compound 0.000 description 2
- 238000001636 atomic emission spectroscopy Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 241000238876 Acari Species 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000559 atomic spectroscopy Methods 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
- G01N21/68—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence using high frequency electric fields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N7/00—Analysing materials by measuring the pressure or volume of a gas or vapour
Landscapes
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US96397407P | 2007-08-07 | 2007-08-07 | |
| US2045708P | 2008-01-11 | 2008-01-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200917330A TW200917330A (en) | 2009-04-16 |
| TWI396224B true TWI396224B (zh) | 2013-05-11 |
Family
ID=40341669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097129918A TWI396224B (zh) | 2007-08-07 | 2008-08-06 | 用於測量及偵測光學發射以及決定氣體原子相對濃度之方法及裝置 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7940395B2 (enExample) |
| EP (1) | EP2185909A4 (enExample) |
| JP (1) | JP2010539443A (enExample) |
| KR (1) | KR20100065321A (enExample) |
| CN (1) | CN101784878B (enExample) |
| TW (1) | TWI396224B (enExample) |
| WO (1) | WO2009020881A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI791524B (zh) * | 2017-05-25 | 2023-02-11 | 美商應用材料股份有限公司 | 用於製造電子裝置的設備、用於製造半導體裝置的設備以及估計在半導體處理腔室中的氣體濃度之方法 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8716655B2 (en) * | 2009-07-02 | 2014-05-06 | Tricorntech Corporation | Integrated ion separation spectrometer |
| US20120129318A1 (en) * | 2010-11-24 | 2012-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Atmospheric pressure plasma etching apparatus and method for manufacturing soi substrate |
| US8609548B2 (en) | 2011-06-06 | 2013-12-17 | Lam Research Corporation | Method for providing high etch rate |
| US8440473B2 (en) * | 2011-06-06 | 2013-05-14 | Lam Research Corporation | Use of spectrum to synchronize RF switching with gas switching during etch |
| JP6095901B2 (ja) * | 2012-05-24 | 2017-03-15 | 株式会社Ihi | 物質特定装置および物質特定方法 |
| KR101791870B1 (ko) * | 2013-02-19 | 2017-11-02 | 세메스 주식회사 | 검사 방법, 이를 포함하는 기판 처리 방법 및 기판 처리 장치 |
| US9454158B2 (en) | 2013-03-15 | 2016-09-27 | Bhushan Somani | Real time diagnostics for flow controller systems and methods |
| CA3000982A1 (en) * | 2014-10-10 | 2016-04-14 | Orthobond, Inc. | Method for detecting and analzying surface films |
| WO2017116905A1 (en) * | 2015-12-30 | 2017-07-06 | Mattson Technology, Inc. | Gas flow control for millisecond anneal system |
| US10504720B2 (en) | 2016-11-29 | 2019-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Etching using chamber with top plate formed of non-oxygen containing material |
| US10983537B2 (en) | 2017-02-27 | 2021-04-20 | Flow Devices And Systems Inc. | Systems and methods for flow sensor back pressure adjustment for mass flow controller |
| JP2020136473A (ja) * | 2019-02-19 | 2020-08-31 | 株式会社東芝 | 半導体装置の製造方法 |
| TWI897405B (zh) * | 2019-03-25 | 2025-09-11 | 日商亞多納富有限公司 | 半導體製造系統、其控制方法及控制該系統的電腦程式 |
| US20220093428A1 (en) * | 2020-09-21 | 2022-03-24 | Applied Materials, Inc. | Atomic oxygen detection in semiconductor processing chambers |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030129117A1 (en) * | 2002-01-02 | 2003-07-10 | Mills Randell L. | Synthesis and characterization of a highly stable amorphous silicon hydride as the product of a catalytic hydrogen plasma reaction |
| US7052943B2 (en) * | 2001-03-16 | 2006-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722151B2 (ja) * | 1984-05-23 | 1995-03-08 | 株式会社日立製作所 | エツチングモニタ−方法 |
| US5405488A (en) * | 1993-09-13 | 1995-04-11 | Vlsi Technology, Inc. | System and method for plasma etching endpoint detection |
| JP3333657B2 (ja) * | 1995-02-10 | 2002-10-15 | サイエンステクノロジー株式会社 | 気相エッチング装置及び気相エッチング方法 |
| US5711843A (en) * | 1995-02-21 | 1998-01-27 | Orincon Technologies, Inc. | System for indirectly monitoring and controlling a process with particular application to plasma processes |
| JPH11102895A (ja) * | 1997-09-29 | 1999-04-13 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5986747A (en) * | 1998-09-24 | 1999-11-16 | Applied Materials, Inc. | Apparatus and method for endpoint detection in non-ionizing gaseous reactor environments |
| WO2001007897A1 (en) * | 1999-07-23 | 2001-02-01 | Efthimion Philip C | A continuous emissions monitor of multiple metal species in harsh environments |
| JP3565774B2 (ja) * | 2000-09-12 | 2004-09-15 | 株式会社日立製作所 | プラズマ処理装置及び処理方法 |
| JP2002270574A (ja) * | 2001-03-07 | 2002-09-20 | Hitachi Kokusai Electric Inc | プラズマエッチング装置 |
| CN1153056C (zh) * | 2001-04-10 | 2004-06-09 | 华邦电子股份有限公司 | 以光学方法测量温度并监控蚀刻率的方法 |
| KR100426988B1 (ko) * | 2001-11-08 | 2004-04-14 | 삼성전자주식회사 | 반도체 제조장비의 식각 종말점 검출장치 및 그에 따른검출방법 |
| US8580076B2 (en) * | 2003-05-22 | 2013-11-12 | Lam Research Corporation | Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith |
| US20040235299A1 (en) * | 2003-05-22 | 2004-11-25 | Axcelis Technologies, Inc. | Plasma ashing apparatus and endpoint detection process |
| EP1697727B1 (en) * | 2003-07-25 | 2007-10-03 | Lightwind Corporation | Method and apparatus for monitoring chemical processes |
| US7053994B2 (en) * | 2003-10-28 | 2006-05-30 | Lam Research Corporation | Method and apparatus for etch endpoint detection |
| JP4849875B2 (ja) * | 2005-11-17 | 2012-01-11 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
-
2008
- 2008-08-01 EP EP08797059.6A patent/EP2185909A4/en not_active Withdrawn
- 2008-08-01 CN CN2008801020772A patent/CN101784878B/zh active Active
- 2008-08-01 WO PCT/US2008/072008 patent/WO2009020881A1/en not_active Ceased
- 2008-08-01 JP JP2010520234A patent/JP2010539443A/ja active Pending
- 2008-08-01 US US12/184,574 patent/US7940395B2/en active Active
- 2008-08-01 KR KR1020107005150A patent/KR20100065321A/ko not_active Ceased
- 2008-08-06 TW TW097129918A patent/TWI396224B/zh active
-
2011
- 2011-03-30 US US13/076,409 patent/US8237928B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7052943B2 (en) * | 2001-03-16 | 2006-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US20030129117A1 (en) * | 2002-01-02 | 2003-07-10 | Mills Randell L. | Synthesis and characterization of a highly stable amorphous silicon hydride as the product of a catalytic hydrogen plasma reaction |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI791524B (zh) * | 2017-05-25 | 2023-02-11 | 美商應用材料股份有限公司 | 用於製造電子裝置的設備、用於製造半導體裝置的設備以及估計在半導體處理腔室中的氣體濃度之方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101784878B (zh) | 2012-08-08 |
| EP2185909A1 (en) | 2010-05-19 |
| WO2009020881A1 (en) | 2009-02-12 |
| US7940395B2 (en) | 2011-05-10 |
| JP2010539443A (ja) | 2010-12-16 |
| US20110177625A1 (en) | 2011-07-21 |
| US20090180113A1 (en) | 2009-07-16 |
| KR20100065321A (ko) | 2010-06-16 |
| EP2185909A4 (en) | 2015-08-05 |
| US8237928B2 (en) | 2012-08-07 |
| TW200917330A (en) | 2009-04-16 |
| CN101784878A (zh) | 2010-07-21 |
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